Pub Date : 2025-06-23DOI: 10.1109/TCPMT.2025.3582405
Lei Wang;Jianke Li;Quan Huang;Chengyang Luo;Guoguang Lu
In this letter, a new high-sensitivity near-field composite probe with mirror symmetry design is presented. Unlike conventional differential magnetic-field probes that can only measure a magnetic-field component, a new differential composite probe with series loops is proposed to simultaneously test electric and magnetic field components. To increase the detection sensitivity, a pair of series loops are inserted into the conventional differential loops, which form the composite probe. Note that these series loops and differential loops are connected in series, not in parallel. The equivalent circuit models on the detection loops are used to explain the operating mechanism of the sensitivity enhancement of this design. In addition, four evolutionary models are simulated, compared, and studied to verify the effectiveness of the sensitivity enhancement. Moreover, the composite probe is together simulated, manufactured, and measured to verify the design rationality. The measured results reveal that the magnetic-field sensitivities of the probe exceed –40 dB at 0.6–5.4 GHz, while the electric-field sensitivities of that are over –40 dB at 1.3–6 GHz, respectively. Therefore, the designed composite probe not only has higher detection sensitivity but also can test the electric and magnetic field components simultaneously.
{"title":"A New High-Sensitivity Near-Field Composite Probe With Mirror Symmetry Design","authors":"Lei Wang;Jianke Li;Quan Huang;Chengyang Luo;Guoguang Lu","doi":"10.1109/TCPMT.2025.3582405","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582405","url":null,"abstract":"In this letter, a new high-sensitivity near-field composite probe with mirror symmetry design is presented. Unlike conventional differential magnetic-field probes that can only measure a magnetic-field component, a new differential composite probe with series loops is proposed to simultaneously test electric and magnetic field components. To increase the detection sensitivity, a pair of series loops are inserted into the conventional differential loops, which form the composite probe. Note that these series loops and differential loops are connected in series, not in parallel. The equivalent circuit models on the detection loops are used to explain the operating mechanism of the sensitivity enhancement of this design. In addition, four evolutionary models are simulated, compared, and studied to verify the effectiveness of the sensitivity enhancement. Moreover, the composite probe is together simulated, manufactured, and measured to verify the design rationality. The measured results reveal that the magnetic-field sensitivities of the probe exceed –40 dB at 0.6–5.4 GHz, while the electric-field sensitivities of that are over –40 dB at 1.3–6 GHz, respectively. Therefore, the designed composite probe not only has higher detection sensitivity but also can test the electric and magnetic field components simultaneously.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1666-1671"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-23DOI: 10.1109/TCPMT.2025.3582009
Zai-Cheng Guo;Weijun Li;Wangtao Ye;Xuedao Wang;Yi Wang
Negative coupling is widely used in microwave filter design, especially for filters with finite transmission zeros (TZs). Conventionally, negative coupling is realized through capacitive irises or probes. However, when the negative coupling is small, capacitive irises need to be very narrow, which presents significant challenges in manufacturing and tuning the filters. In this article, a negative dispersion-less coupling structure (NDLCS) is proposed based on a partial-height post for waveguide filters. Compared to capacitive irises, the NDLCS achieves a comparable effect while allowing the minimum dimension of coupling structures to increase from tens of micrometers to a few millimeters. The NDLCS also enables the installation of tuning screws, which significantly lowers both the manufacturing difficulty and the sensitivity to manufacturing tolerances. Two waveguide filters with narrow bandwidths are designed using the proposed NDLCS and compared to filters with conventional capacitive irises and dispersive coupling structures. The investigated and measured results demonstrate the advantages of the proposed NDLCS in manufacturing and tuning when realizing small negative coupling for waveguide filters.
{"title":"Negative Dispersion-Less Coupling Structure and Its Application for Realization of Extremely Small Negative Couplings in Waveguide Filters","authors":"Zai-Cheng Guo;Weijun Li;Wangtao Ye;Xuedao Wang;Yi Wang","doi":"10.1109/TCPMT.2025.3582009","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582009","url":null,"abstract":"Negative coupling is widely used in microwave filter design, especially for filters with finite transmission zeros (TZs). Conventionally, negative coupling is realized through capacitive irises or probes. However, when the negative coupling is small, capacitive irises need to be very narrow, which presents significant challenges in manufacturing and tuning the filters. In this article, a negative dispersion-less coupling structure (NDLCS) is proposed based on a partial-height post for waveguide filters. Compared to capacitive irises, the NDLCS achieves a comparable effect while allowing the minimum dimension of coupling structures to increase from tens of micrometers to a few millimeters. The NDLCS also enables the installation of tuning screws, which significantly lowers both the manufacturing difficulty and the sensitivity to manufacturing tolerances. Two waveguide filters with narrow bandwidths are designed using the proposed NDLCS and compared to filters with conventional capacitive irises and dispersive coupling structures. The investigated and measured results demonstrate the advantages of the proposed NDLCS in manufacturing and tuning when realizing small negative coupling for waveguide filters.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1644-1651"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-23DOI: 10.1109/TCPMT.2025.3582041
Jean Charbonnier;Thierry Mourier;Stéphane Bernabé
Recent developments in photonics applications, in the fields of datacom, high-performance computing, and integrated optical sensors, have accelerated the trend toward electronic/optical convergence announced over ten years ago. The growing maturity of silicon photonics and its use in conjunction with advanced packaging techniques (3-D stacking, through silicon via (TSV), and fan-out wafer-level packaging) have contributed to the emergence of two new objects that are becoming standards: co-packaged optics (CPOs) and photonic interposers, both leveraging photonic chiplets. This article reviews the emergence of these two objects, as well as the most recent achievements.
{"title":"3-D Packaging Technologies for Advanced Integrated Photonics Modules: A Review","authors":"Jean Charbonnier;Thierry Mourier;Stéphane Bernabé","doi":"10.1109/TCPMT.2025.3582041","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582041","url":null,"abstract":"Recent developments in photonics applications, in the fields of datacom, high-performance computing, and integrated optical sensors, have accelerated the trend toward electronic/optical convergence announced over ten years ago. The growing maturity of silicon photonics and its use in conjunction with advanced packaging techniques (3-D stacking, through silicon via (TSV), and fan-out wafer-level packaging) have contributed to the emergence of two new objects that are becoming standards: co-packaged optics (CPOs) and photonic interposers, both leveraging photonic chiplets. This article reviews the emergence of these two objects, as well as the most recent achievements.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1565-1580"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-20DOI: 10.1109/TCPMT.2025.3581320
Na Ji;Guangxu Shen;Wenjie Feng;Quan Xue;Wenquan Che
By effectively merging in-phase and out-of-phase electric and magnetic mixed couplings in an in-line fourth-order topology, a high-selectivity millimeter-wave (mm-wave) bandpass filter (BPF) is proposed. The use of in-phase and out-of-phase mixed couplings introduces pairs of 180° phase shift, resulting in multiple transmission zeros (TZs) generated outside the passband, whose locations can be independently controlled by adjusting the coupling strength. Furthermore, the equivalent circuit models are analyzed and discussed to elucidate the operating mechanism. For experimental verification, a 25-GHz in-line fourth-order high-selectivity BPF is designed and fabricated using gallium arsenide (GaAs)-based integrated passive device (IPD) process. Compared with prior works, the proposed BPF shows the merits of high selectivity, wider rejection bandwidth, and low insertion losses, making it well-suited for enhancing receiver sensitivity and suppressing interference in satellite communication systems.
{"title":"Packaged Ka-Band IPD Bandpass Filter Using In-Phase and Out-of-Phase Mixed Couplings","authors":"Na Ji;Guangxu Shen;Wenjie Feng;Quan Xue;Wenquan Che","doi":"10.1109/TCPMT.2025.3581320","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3581320","url":null,"abstract":"By effectively merging in-phase and out-of-phase electric and magnetic mixed couplings in an in-line fourth-order topology, a high-selectivity millimeter-wave (mm-wave) bandpass filter (BPF) is proposed. The use of in-phase and out-of-phase mixed couplings introduces pairs of 180° phase shift, resulting in multiple transmission zeros (TZs) generated outside the passband, whose locations can be independently controlled by adjusting the coupling strength. Furthermore, the equivalent circuit models are analyzed and discussed to elucidate the operating mechanism. For experimental verification, a 25-GHz in-line fourth-order high-selectivity BPF is designed and fabricated using gallium arsenide (GaAs)-based integrated passive device (IPD) process. Compared with prior works, the proposed BPF shows the merits of high selectivity, wider rejection bandwidth, and low insertion losses, making it well-suited for enhancing receiver sensitivity and suppressing interference in satellite communication systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1750-1758"},"PeriodicalIF":3.0,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electronic design automation (EDA) has unique challenges for addressing the design of systems for emerging applications due to the complexities involved, where multiple chiplets are integrated together on a heterogeneous platform. This challenge arises due to the long computation time required for simulation to capture all the necessary first order, second order, and sometimes third-order parasitic effects. Emerging machine learning (ML) and Gaussian process (GP) methods have helped expedite these processes. The deep kernel learning (DKL) model combines the structural properties of deep learning architectures with the nonparametric flexibility of kernel methods. It shows advantages by applying a GP with the corresponding kernel function to the final hidden layer of a deep neural network (DNN). However, DKL sometimes suffers from overfitting and scalability issues. In this article, we propose an adaptive learning framework for S-parameter prediction, incorporating the spectral transposed convolutional neural network (S-TCNN) and DKL. The proposed model takes input parameters from the design space, upsamples them through transposed convolutional layers, and utilizes a GP kernel layer to approximate the desired kernel function. Additionally, the latent feature space adaptively compresses and extracts features from the input matrix, serving as a separate input parameter for the GP kernel layer. Further, we discuss the training strategy and model scalability. The proposed model is tested and evaluated using two advanced packaging examples. Results show a reduction in the number of hyperparameters by over 50% and approximately 40% improvements in loss and normalized mean-square error (NMSE).
{"title":"Deep Kernel-Based Hyperparameter Adaptive Learning and Frequency Response Predictions Using Transposed Convolutional Neural Network","authors":"Yiliang Guo;Yifan Wang;Joshua Corsello;Madhavan Swaminathan","doi":"10.1109/TCPMT.2025.3578968","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578968","url":null,"abstract":"Electronic design automation (EDA) has unique challenges for addressing the design of systems for emerging applications due to the complexities involved, where multiple chiplets are integrated together on a heterogeneous platform. This challenge arises due to the long computation time required for simulation to capture all the necessary first order, second order, and sometimes third-order parasitic effects. Emerging machine learning (ML) and Gaussian process (GP) methods have helped expedite these processes. The deep kernel learning (DKL) model combines the structural properties of deep learning architectures with the nonparametric flexibility of kernel methods. It shows advantages by applying a GP with the corresponding kernel function to the final hidden layer of a deep neural network (DNN). However, DKL sometimes suffers from overfitting and scalability issues. In this article, we propose an adaptive learning framework for <italic>S</i>-parameter prediction, incorporating the spectral transposed convolutional neural network (S-TCNN) and DKL. The proposed model takes input parameters from the design space, upsamples them through transposed convolutional layers, and utilizes a GP kernel layer to approximate the desired kernel function. Additionally, the latent feature space adaptively compresses and extracts features from the input matrix, serving as a separate input parameter for the GP kernel layer. Further, we discuss the training strategy and model scalability. The proposed model is tested and evaluated using two advanced packaging examples. Results show a reduction in the number of hyperparameters by over 50% and approximately 40% improvements in loss and normalized mean-square error (NMSE).","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"1964-1972"},"PeriodicalIF":3.0,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Through glass via (TGV) technology presents a promising alternative for 3-D vertical interconnects in advanced packaging. As device integration progresses, the number of through vias in glass interposers is on the rise, which presents challenges in achieving high-quality and consistent processing of massive TGVs. This study utilizes laser-induced wet etching, complemented by multienergy field mixing assistance to produce highly consistent and significant quantities of TGVs on Corning Eagle XG (EXG) glass. Initially, a specialized wet etching system was developed, featuring an ultrasonic field, temperature control for a water bath, and sample reciprocation. The impact of these parameters on the morphology of the TGVs was systematically investigated. In addition, the study explored the mechanisms by which various etching parameters—such as temperature, etchant concentration, and ultrasonic power—affect the consistency of the TGVs. Ultimately, through the optimization of etching parameters via orthogonal experiments and statistical data sampling, it was confirmed that integrating an ultrasonic field, sample reciprocation, and rotation during the etching process significantly enhances the quality and consistency of the massive TGVs. The consistency of all TGVs (26898 per substrate) was enhanced with a relative standard deviation of 0.73% for the surface hole diameter and an etching rate of $1.24~mu $ m/min. This advanced etching technology for high-consistent massive TGVs greatly improves the productivity and practicality of devices utilizing TGVs in 3-D packaging applications.
{"title":"Wet Etching Process Optimization and Consistency Enhancement of Massive Through Glass Vias Through Laser-Induced Wet Etching","authors":"Maoxiang Hou;Nan Liao;Junjie Zhang;Meihong He;Wei Feng;Yun Chen;Xin Chen","doi":"10.1109/TCPMT.2025.3578609","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578609","url":null,"abstract":"Through glass via (TGV) technology presents a promising alternative for 3-D vertical interconnects in advanced packaging. As device integration progresses, the number of through vias in glass interposers is on the rise, which presents challenges in achieving high-quality and consistent processing of massive TGVs. This study utilizes laser-induced wet etching, complemented by multienergy field mixing assistance to produce highly consistent and significant quantities of TGVs on Corning Eagle XG (EXG) glass. Initially, a specialized wet etching system was developed, featuring an ultrasonic field, temperature control for a water bath, and sample reciprocation. The impact of these parameters on the morphology of the TGVs was systematically investigated. In addition, the study explored the mechanisms by which various etching parameters—such as temperature, etchant concentration, and ultrasonic power—affect the consistency of the TGVs. Ultimately, through the optimization of etching parameters via orthogonal experiments and statistical data sampling, it was confirmed that integrating an ultrasonic field, sample reciprocation, and rotation during the etching process significantly enhances the quality and consistency of the massive TGVs. The consistency of all TGVs (26898 per substrate) was enhanced with a relative standard deviation of 0.73% for the surface hole diameter and an etching rate of <inline-formula> <tex-math>$1.24~mu $ </tex-math></inline-formula>m/min. This advanced etching technology for high-consistent massive TGVs greatly improves the productivity and practicality of devices utilizing TGVs in 3-D packaging applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1788-1794"},"PeriodicalIF":3.0,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-10DOI: 10.1109/TCPMT.2025.3578405
Ya Sun;Zhikang Yuan;Zhiwen Huang;Jun Hu;Jinliang He
In power modules, partial discharge (PD) at the triple points of “Copper-Ceramic-Silicone Gel” poses a significant challenge to the development of higher voltage and power density. This article utilized a reliable and controllable method, jet dispensing, to assemble the electric field adaptively controlled structure in power electronic modules to optimize the electric field distribution. The structure was composed of ZnO/epoxy resin nonlinear conductivity composites, with the thickness controlled at $300~pm ~50~mu $ m. The assembled electric field adaptively controlled structure significantly enhanced the PD inception voltage (PDIV) of the module from 6.0 to 13.2 kV, with a 120.0% increase under the sinusoidal waves, and from 4.0 to 9.6 kV under positive polarity square-wave pulses, with an increased ratio of 140.0%. This article provides a new perspective on the application of nonlinear materials in power electronic modules.
{"title":"Jet-Dispensing-Based Assembly of Electric Field Adaptively Controlled Structure in Power Electronic Modules","authors":"Ya Sun;Zhikang Yuan;Zhiwen Huang;Jun Hu;Jinliang He","doi":"10.1109/TCPMT.2025.3578405","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578405","url":null,"abstract":"In power modules, partial discharge (PD) at the triple points of “Copper-Ceramic-Silicone Gel” poses a significant challenge to the development of higher voltage and power density. This article utilized a reliable and controllable method, jet dispensing, to assemble the electric field adaptively controlled structure in power electronic modules to optimize the electric field distribution. The structure was composed of ZnO/epoxy resin nonlinear conductivity composites, with the thickness controlled at <inline-formula> <tex-math>$300~pm ~50~mu $ </tex-math></inline-formula>m. The assembled electric field adaptively controlled structure significantly enhanced the PD inception voltage (PDIV) of the module from 6.0 to 13.2 kV, with a 120.0% increase under the sinusoidal waves, and from 4.0 to 9.6 kV under positive polarity square-wave pulses, with an increased ratio of 140.0%. This article provides a new perspective on the application of nonlinear materials in power electronic modules.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1803-1810"},"PeriodicalIF":3.0,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-09DOI: 10.1109/TCPMT.2025.3578042
Jianyu Du;Lang Chen;Han Xu;Jinwen Zhang;Huaiqiang Yu;Chi Zhang;Wei Wang
Polymer-based embedded silicon-based fan-out (P-eSiFO) is a new packaging technique, which provides a way to high-density integration of high-performance chiplets. However, integrating multiple materials with diverse physical properties in the P-eSiFO leads to substantial warpage during downstream high-temperature manufacturing processes. In this study, a thermomechanical model of a P-eSiFO was developed to examine the thermomechanical with varying structural parameters and material selections. Test dies having an area of 0.5 cm2 were embedded in a 500-$mu $ m-thick silicon carrier following the P-eSiFO process. After careful parameters, optimization chip warpage can effectively decrease by over 60%. Experimental results showed that the height difference between the embedded chip and its silicon interposer can be reduced down to $1~mu $ m with optimized parameters after high-temperature processes. This work provides useful insights for addressing multimaterial warpage concerns during thermal processes in advanced packaging.
{"title":"Reducing Warpage for Polymer-Based Embedded Silicon Fan-Out (P-eSiFO) Packaging During Thermal Process Loadings","authors":"Jianyu Du;Lang Chen;Han Xu;Jinwen Zhang;Huaiqiang Yu;Chi Zhang;Wei Wang","doi":"10.1109/TCPMT.2025.3578042","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578042","url":null,"abstract":"Polymer-based embedded silicon-based fan-out (P-eSiFO) is a new packaging technique, which provides a way to high-density integration of high-performance chiplets. However, integrating multiple materials with diverse physical properties in the P-eSiFO leads to substantial warpage during downstream high-temperature manufacturing processes. In this study, a thermomechanical model of a P-eSiFO was developed to examine the thermomechanical with varying structural parameters and material selections. Test dies having an area of 0.5 cm<sup>2</sup> were embedded in a 500-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick silicon carrier following the P-eSiFO process. After careful parameters, optimization chip warpage can effectively decrease by over 60%. Experimental results showed that the height difference between the embedded chip and its silicon interposer can be reduced down to <inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>m with optimized parameters after high-temperature processes. This work provides useful insights for addressing multimaterial warpage concerns during thermal processes in advanced packaging.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"2033-2040"},"PeriodicalIF":3.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tracking error is a crucial metric for assessing optical alignment changes in transmitter optical subassemblies (TOSAs) under varying temperatures. We present a 100 Gb/s four-channel TOSA developed for industrial temperature ranges (–$40~^{circ }$ C–$+ 85~^{circ }$ C), featuring enhanced Z-sleeve thickness (0.45 mm) and optimized optical alignment. Finite-element analysis (FEA) showed that this increase reduced maximum stress from 150 to 94 MPa and displacement from 5.5 to $3.6~mu $ m under identical shear loading by increasing the Z-sleeve thickness from 0.35 to 0.45 mm. Meanwhile, the root mean squares (rms) displacement ranges from 55.8 to $7.6~mu $ m, achieving quasi-coaxial beam alignment. Moreover, thermal characterization revealed that the optimized 0.45 mm configuration consistently maintained tracking errors below 0.4 dB across all channels and temperatures. These results confirm that the dual strategy of mechanical reinforcement and precise optical path alignment effectively improves thermal stability, meeting the stringent requirements of high-density wavelength division multiplexing (WDM) systems for data centers and 5G/6G applications.
{"title":"100 Gb/s Multichannel TOSA With Low Tracking Error at the Industry Operating Temperature","authors":"Liang Zhang;Xiaochuan Xia;Haoran Ma;Yang Liu;Hongwei Liang","doi":"10.1109/TCPMT.2025.3576864","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3576864","url":null,"abstract":"Tracking error is a crucial metric for assessing optical alignment changes in transmitter optical subassemblies (TOSAs) under varying temperatures. We present a 100 Gb/s four-channel TOSA developed for industrial temperature ranges (–<inline-formula> <tex-math>$40~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$+ 85~^{circ }$ </tex-math></inline-formula>C), featuring enhanced Z-sleeve thickness (0.45 mm) and optimized optical alignment. Finite-element analysis (FEA) showed that this increase reduced maximum stress from 150 to 94 MPa and displacement from 5.5 to <inline-formula> <tex-math>$3.6~mu $ </tex-math></inline-formula>m under identical shear loading by increasing the Z-sleeve thickness from 0.35 to 0.45 mm. Meanwhile, the root mean squares (rms) displacement ranges from 55.8 to <inline-formula> <tex-math>$7.6~mu $ </tex-math></inline-formula>m, achieving quasi-coaxial beam alignment. Moreover, thermal characterization revealed that the optimized 0.45 mm configuration consistently maintained tracking errors below 0.4 dB across all channels and temperatures. These results confirm that the dual strategy of mechanical reinforcement and precise optical path alignment effectively improves thermal stability, meeting the stringent requirements of high-density wavelength division multiplexing (WDM) systems for data centers and 5G/6G applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1557-1560"},"PeriodicalIF":2.3,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-04DOI: 10.1109/TCPMT.2025.3576350
Jin Wu;Yuefeng Hou;Liqi Yang;Zhenshuai Fu;Meicheng Liu;Dawei Zhang;Mingtao Zhang;Kaixue Ma
A low-loss and self-packaged full phase shift reflection-type phase shifter (RTPS) based on the hybrid integrated suspended line (HISL) technology is introduced. The proposed RTPS consists of a 90° branch line coupler and two tunable parallel L–C loads connected to the through port and coupled ports. First, an enhanced two-step phase extraction method is proposed, reducing the evaluation state of the RTPS and achieving the minimal phase step while keeping the number of states unchanged. Second, the HISL technology is adopted in the design to achieve low insertion loss (IL). Due to the self-packaging characteristics of HISL, the proposed RTPS effectively avoids interference with surrounding circuits and is highly integrated. Third, the low-power digital tunable capacitor (DTC) with a bus interface is used as the tunable load, making the RTPS easy to integrate into large-scale phased array systems. Finally, a prototype is fabricated by using the sheet metal and PCB process. At the center frequency of 2.45 GHz, the proposed RTPS achieved a measured phase shift range (PSR) of 368° under 128 sweeping states with an IL of 0.9–1.6 dB, and the figure of merit (FoM) is 230°/dB.
{"title":"Low-Loss Self-Packaged Full Phase Shift Reflection-Type Phase Shifter Based on Hybrid Integrated Suspended Line Technology","authors":"Jin Wu;Yuefeng Hou;Liqi Yang;Zhenshuai Fu;Meicheng Liu;Dawei Zhang;Mingtao Zhang;Kaixue Ma","doi":"10.1109/TCPMT.2025.3576350","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3576350","url":null,"abstract":"A low-loss and self-packaged full phase shift reflection-type phase shifter (RTPS) based on the hybrid integrated suspended line (HISL) technology is introduced. The proposed RTPS consists of a 90° branch line coupler and two tunable parallel <italic>L</i>–<italic>C</i> loads connected to the through port and coupled ports. First, an enhanced two-step phase extraction method is proposed, reducing the evaluation state of the RTPS and achieving the minimal phase step while keeping the number of states unchanged. Second, the HISL technology is adopted in the design to achieve low insertion loss (IL). Due to the self-packaging characteristics of HISL, the proposed RTPS effectively avoids interference with surrounding circuits and is highly integrated. Third, the low-power digital tunable capacitor (DTC) with a bus interface is used as the tunable load, making the RTPS easy to integrate into large-scale phased array systems. Finally, a prototype is fabricated by using the sheet metal and PCB process. At the center frequency of 2.45 GHz, the proposed RTPS achieved a measured phase shift range (PSR) of 368° under 128 sweeping states with an IL of 0.9–1.6 dB, and the figure of merit (FoM) is 230°/dB.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"2010-2018"},"PeriodicalIF":3.0,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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