Pub Date : 2024-08-13DOI: 10.1109/TCPMT.2024.3442828
Pei Ge;Hao-Ran Zhu;Jia-Guo Lu
In this article, a novel ultrawide wire-bonding and vertical via interconnection are proposed for 3-D system in package (SiP) by embedded nonuniform elliptic technique. The vertical compensation structure of the bonding wires is constructed by an elliptic capacitive stripline with a series inductance short via. For vertical via interconnection, the elliptical slot is employed to act as a seventh-order low-pass filter with the quasi-coaxial structure, which is formed by the signal hole surrounded by several grounded holes. The impedance fluctuation is significantly reduced by gradually changing the width of the elliptic structure. The coupling between the adjacent wires is added to build the equivalent circuit model, which can accurately analyze the transmission behavior of the wire-bonding interconnection. From the measurement results, the return loss is better than 15 dB and the insertion loss is less than 1 dB within the frequency range of dc-43.5 GHz.
{"title":"A DC-43.5 GHz Wire-Bonding and Vertical Via Interconnection by Embedded Nonuniform Elliptical Technique for 3-D System in Package","authors":"Pei Ge;Hao-Ran Zhu;Jia-Guo Lu","doi":"10.1109/TCPMT.2024.3442828","DOIUrl":"10.1109/TCPMT.2024.3442828","url":null,"abstract":"In this article, a novel ultrawide wire-bonding and vertical via interconnection are proposed for 3-D system in package (SiP) by embedded nonuniform elliptic technique. The vertical compensation structure of the bonding wires is constructed by an elliptic capacitive stripline with a series inductance short via. For vertical via interconnection, the elliptical slot is employed to act as a seventh-order low-pass filter with the quasi-coaxial structure, which is formed by the signal hole surrounded by several grounded holes. The impedance fluctuation is significantly reduced by gradually changing the width of the elliptic structure. The coupling between the adjacent wires is added to build the equivalent circuit model, which can accurately analyze the transmission behavior of the wire-bonding interconnection. From the measurement results, the return loss is better than 15 dB and the insertion loss is less than 1 dB within the frequency range of dc-43.5 GHz.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142219866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-05DOI: 10.1109/TCPMT.2024.3438373
Bo Peng;Yaya Liang;Cong Liu;Ling Gao;Linjie Liu;Mingyang Wang;Zuoteng Gan;Pingan Du
The escalating integration level of system-in-package (SiP) has brought about significant challenges in thermal management. To meet the requirements of ever-increasing heat flux of SiP system with multichips, a method of embedding cooling microchannels into high temperature co-fired ceramics (HTCCs) substrates is proposed in this article. First, five-microchannels embedded topology structure are designed to investigate their heat transfer performance in chip cooling in terms of the fluid-thermal coupling numerical simulations, and the results show that the spider-netted microchannel yields the best heat transfer performance, especially for the chip with high heat flux, and the conclusion that the spider-netted structure has superior heat dissipation is verified through experiments. Furthermore, a personalized spider-netted microchannel parallel structure relying the distribution of multichips heat flux is proposed to achieve efficient heat dissipation for SiP system, resulting in reduced chip temperatures and minimized interference from chips with high heat flux density on neighboring chips. Finally, a series of experiments are carried out to verify the feasibility of the designed microchannel structure for SiP. The research results indicate that embedding microchannels in HTCC substrates can be employed to improve the thermal dissipation capability of SiP and enhance chips integration.
{"title":"Design of Microchannels Embedded in HTCC Substrate for Heat Dissipation of SiP With Multiple Chips","authors":"Bo Peng;Yaya Liang;Cong Liu;Ling Gao;Linjie Liu;Mingyang Wang;Zuoteng Gan;Pingan Du","doi":"10.1109/TCPMT.2024.3438373","DOIUrl":"10.1109/TCPMT.2024.3438373","url":null,"abstract":"The escalating integration level of system-in-package (SiP) has brought about significant challenges in thermal management. To meet the requirements of ever-increasing heat flux of SiP system with multichips, a method of embedding cooling microchannels into high temperature co-fired ceramics (HTCCs) substrates is proposed in this article. First, five-microchannels embedded topology structure are designed to investigate their heat transfer performance in chip cooling in terms of the fluid-thermal coupling numerical simulations, and the results show that the spider-netted microchannel yields the best heat transfer performance, especially for the chip with high heat flux, and the conclusion that the spider-netted structure has superior heat dissipation is verified through experiments. Furthermore, a personalized spider-netted microchannel parallel structure relying the distribution of multichips heat flux is proposed to achieve efficient heat dissipation for SiP system, resulting in reduced chip temperatures and minimized interference from chips with high heat flux density on neighboring chips. Finally, a series of experiments are carried out to verify the feasibility of the designed microchannel structure for SiP. The research results indicate that embedding microchannels in HTCC substrates can be employed to improve the thermal dissipation capability of SiP and enhance chips integration.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-05DOI: 10.1109/TCPMT.2024.3438763
Da-Lin Li;Mu-Shui Zhang;Zi-Xin Wang
In this article, a novel and compact centrosymmetric mushroom electromagnetic bandgap (EBG) structure is proposed for multiband power noise suppression. Different mushroom patches are integrated in a compact unit cell in a centrosymmetric pattern to generate multiple stopbands. The stopbands can be easily designed and adjusted by the area ratio of different subpatches and scaling. The most obvious advantages of the proposed method are compact in structure and easy in design, especially for tri-band and four-band stopband power noise suppression. EBG structures with double bands, treble bands, and four bands are designed and fabricated. Measurements and simulations are performed to verify the multiband characteristic, and good agreement is observed. This structure provides a simple, compact, and attractive solution for multiband power noise suppression with more than three bands.
{"title":"A Novel and Compact Centrosymmetric EBG Structure for Multiband Power Noise Suppression","authors":"Da-Lin Li;Mu-Shui Zhang;Zi-Xin Wang","doi":"10.1109/TCPMT.2024.3438763","DOIUrl":"10.1109/TCPMT.2024.3438763","url":null,"abstract":"In this article, a novel and compact centrosymmetric mushroom electromagnetic bandgap (EBG) structure is proposed for multiband power noise suppression. Different mushroom patches are integrated in a compact unit cell in a centrosymmetric pattern to generate multiple stopbands. The stopbands can be easily designed and adjusted by the area ratio of different subpatches and scaling. The most obvious advantages of the proposed method are compact in structure and easy in design, especially for tri-band and four-band stopband power noise suppression. EBG structures with double bands, treble bands, and four bands are designed and fabricated. Measurements and simulations are performed to verify the multiband characteristic, and good agreement is observed. This structure provides a simple, compact, and attractive solution for multiband power noise suppression with more than three bands.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-05DOI: 10.1109/TCPMT.2024.3430936
Danyu Yang;Yuandan Dong
The study presents a self-packaged bandpass filter (BPF) with miniaturization and wide stopband based on shielded stripline resonators using a mixed coupling scheme. First, the miniaturized effect and the field distribution at fundamental and spurious modes of a single resonator are analyzed. Then, a mixed coupling scheme is applied to two coupled resonators for spurious passband suppression to achieve wide stopband, which is verified by the second-order BPF response. Finally, shielded stripline resonators with a mixed coupling scheme are further applied to the design of the fourth-order 5G N78 band BPF. The final self-packaged fourth-order BPF achieves an extremely small volume of $0.144times 0.139times 0.025lambda 3$