Pub Date : 2025-07-10DOI: 10.1109/TCPMT.2025.3587762
Chenxiao Huang;Guisheng Zou;Shuaiqi Wang;Zehua Li;Guoqiang Qi;Lei Liu
Bonding pressure is one of the most important process parameters in pressure-assisted sintering bonding of the SiC power chips. The buffer film, placed between the pressure indenter and the chips, is essential to balance the pressure during the simultaneous bonding of multiple chips. However, the pressure balance mechanism, optimization, and enhancement of the buffer film have been rarely studied. In this study, a simulation model for the pressure balance effect of the polytetrafluoroethylene (PTFE) buffer film was established and verified by experimental results. The mean relative error (MRE) between the simulation and experimental results was merely 1.06% and 1.98%, regarding to the compression ratio and porosity of the joint. It was found that the pressure balance ability peaked at an optimal pressure for the first time. The optimal pressure value was negatively correlated with the sintering temperature regardless of the film thickness. To improve the pressure balance effect at lower pressure, drilled buffer films were proposed to enhance the pressure balance ability of the PTFE film. With a drilled film, the joint porosity difference between two chips with a 60-$mu $ m-height difference was reduced by 44%. The combination of films with different removal rates could further eliminate the influence of a specific height difference. This work is promising to deepen the understanding of the pressure balance mechanisms of the buffer film and pave the way for low-cost and low-pressure sintering bonding.
{"title":"The Pressure Balance Effect of the Polytetrafluoroethylene Buffer Film in Pressure-Assisted Sintering Bonding","authors":"Chenxiao Huang;Guisheng Zou;Shuaiqi Wang;Zehua Li;Guoqiang Qi;Lei Liu","doi":"10.1109/TCPMT.2025.3587762","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3587762","url":null,"abstract":"Bonding pressure is one of the most important process parameters in pressure-assisted sintering bonding of the SiC power chips. The buffer film, placed between the pressure indenter and the chips, is essential to balance the pressure during the simultaneous bonding of multiple chips. However, the pressure balance mechanism, optimization, and enhancement of the buffer film have been rarely studied. In this study, a simulation model for the pressure balance effect of the polytetrafluoroethylene (PTFE) buffer film was established and verified by experimental results. The mean relative error (MRE) between the simulation and experimental results was merely 1.06% and 1.98%, regarding to the compression ratio and porosity of the joint. It was found that the pressure balance ability peaked at an optimal pressure for the first time. The optimal pressure value was negatively correlated with the sintering temperature regardless of the film thickness. To improve the pressure balance effect at lower pressure, drilled buffer films were proposed to enhance the pressure balance ability of the PTFE film. With a drilled film, the joint porosity difference between two chips with a 60-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-height difference was reduced by 44%. The combination of films with different removal rates could further eliminate the influence of a specific height difference. This work is promising to deepen the understanding of the pressure balance mechanisms of the buffer film and pave the way for low-cost and low-pressure sintering bonding.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1778-1787"},"PeriodicalIF":3.0,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-08DOI: 10.1109/TCPMT.2025.3583863
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3583863","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3583863","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1561-1561"},"PeriodicalIF":2.3,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11073825","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-08DOI: 10.1109/TCPMT.2025.3583865
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3583865","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3583865","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11074259","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-08DOI: 10.1109/TCPMT.2025.3583861
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3583861","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3583861","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11073826","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-30DOI: 10.1109/TCPMT.2025.3584470
Marco Atlante;Riccardo Trinchero;Igor S. Stievano;Mihai Telescu;Noël Tanguy
This article presents a method for generating accurate and efficient macromodels of high-speed input/output (I/O) buffers. Extending existing techniques, the proposed approach enables a modular and scalable model generation tool based on machine learning. Given the limitations of traditional methods, this work leverages kernel regression to develop SPICE-compliant models. Two compression schemes, random selection and Nyström approximation, are used and thoroughly compared to reduce the number of expansion terms, with beneficial effects in terms of compactness of the SPICE implementation. The effectiveness of the method in terms of model accuracy and efficiency is stressed through real devices and typical signal and power integrity (SIPI) cosimulations.
{"title":"IC Modeling via Machine Learning Regressions: A Data-Driven Approach to SPICE Integration","authors":"Marco Atlante;Riccardo Trinchero;Igor S. Stievano;Mihai Telescu;Noël Tanguy","doi":"10.1109/TCPMT.2025.3584470","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3584470","url":null,"abstract":"This article presents a method for generating accurate and efficient macromodels of high-speed input/output (I/O) buffers. Extending existing techniques, the proposed approach enables a modular and scalable model generation tool based on machine learning. Given the limitations of traditional methods, this work leverages kernel regression to develop SPICE-compliant models. Two compression schemes, random selection and Nyström approximation, are used and thoroughly compared to reduce the number of expansion terms, with beneficial effects in terms of compactness of the SPICE implementation. The effectiveness of the method in terms of model accuracy and efficiency is stressed through real devices and typical signal and power integrity (SIPI) cosimulations.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"1814-1822"},"PeriodicalIF":3.0,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-30DOI: 10.1109/TCPMT.2025.3584053
Jihun Kim;Nam Ki Hwang;Seul Ki Hong;Min Ju Kim;Jong Kyung Park
As semiconductor devices continue to demand higher performance and density, Cu/polymer hybrid structures have gained significant attention due to their potential to replace conventional SiO2 dielectrics. In this study, we explore the optimization of dry etching processes for 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane (p$text {V}_{{3}}text {D}_{{3}}$ ) a low-dielectric constant polymer ($k =2.2$ ), used in Cu/polymer hybrid structures. By employing initiated chemical vapor deposition (iCVD) high purity, p$text {V}_{{3}}text {D}_{{3}}$ thin films with a thickness of 200 nm were deposited. Various gas mixtures, including O2, CF4, and Ar, were used for dry etching to evaluate the optimal etching conditions. Results show that the most anisotropic etching occurred with an O2/Ar gas mixture, achieving an etching depth of 200 nm and near-vertical sidewalls. Detailed analysis of the etching mechanism was conducted using Gibbs free energy calculations and X-ray photoelectron spectroscopy (XPS). The findings of this study provide valuable insights into the fabrication of high-density, high-performance Cu/polymer hybrid structures for next-generation semiconductor devices.
{"title":"Advanced Polymer Dry Etching Processes for Enhanced Cu/Polymer Hybrid Bonding","authors":"Jihun Kim;Nam Ki Hwang;Seul Ki Hong;Min Ju Kim;Jong Kyung Park","doi":"10.1109/TCPMT.2025.3584053","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3584053","url":null,"abstract":"As semiconductor devices continue to demand higher performance and density, Cu/polymer hybrid structures have gained significant attention due to their potential to replace conventional SiO<sub>2</sub> dielectrics. In this study, we explore the optimization of dry etching processes for 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane (p<inline-formula> <tex-math>$text {V}_{{3}}text {D}_{{3}}$ </tex-math></inline-formula>) a low-dielectric constant polymer (<inline-formula> <tex-math>$k =2.2$ </tex-math></inline-formula>), used in Cu/polymer hybrid structures. By employing initiated chemical vapor deposition (iCVD) high purity, p<inline-formula> <tex-math>$text {V}_{{3}}text {D}_{{3}}$ </tex-math></inline-formula> thin films with a thickness of 200 nm were deposited. Various gas mixtures, including O<sub>2</sub>, CF<sub>4</sub>, and Ar, were used for dry etching to evaluate the optimal etching conditions. Results show that the most anisotropic etching occurred with an O<sub>2</sub>/Ar gas mixture, achieving an etching depth of 200 nm and near-vertical sidewalls. Detailed analysis of the etching mechanism was conducted using Gibbs free energy calculations and X-ray photoelectron spectroscopy (XPS). The findings of this study provide valuable insights into the fabrication of high-density, high-performance Cu/polymer hybrid structures for next-generation semiconductor devices.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1795-1802"},"PeriodicalIF":3.0,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-26DOI: 10.1109/TCPMT.2025.3570046
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3570046","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3570046","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11053191","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-26DOI: 10.1109/TCPMT.2025.3570044
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3570044","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3570044","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"1384-1384"},"PeriodicalIF":2.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11053190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-26DOI: 10.1109/TCPMT.2025.3570042
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3570042","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3570042","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11053188","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-24DOI: 10.1109/TCPMT.2025.3582617
Junwen Jiang;Raafat R. Mansour
This article presents the design and implementation of vanadium oxide (VO2) switch-based tunable 3-D cavity filters. The proposed concept employs switched strip lines integrated with cavity resonators to tune their resonance frequencies. This eliminates the need to use variable/switched capacitors, which are known to degrade the loaded Q of the filters over the tuning range. Combline filters and dielectric filters integrated with VO2 switches are designed, fabricated, and measured. The measurement results verify the tunability and feasibility of using the proposed tuning scheme to realize a relatively high-Q VO2 combline and dielectric resonator tunable filters that can maintain their Q values over the tuning range.
{"title":"VO2 Switch-Based Tunable 3-D Cavity Filters","authors":"Junwen Jiang;Raafat R. Mansour","doi":"10.1109/TCPMT.2025.3582617","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582617","url":null,"abstract":"This article presents the design and implementation of vanadium oxide (VO<sub>2</sub>) switch-based tunable 3-D cavity filters. The proposed concept employs switched strip lines integrated with cavity resonators to tune their resonance frequencies. This eliminates the need to use variable/switched capacitors, which are known to degrade the loaded <italic>Q</i> of the filters over the tuning range. Combline filters and dielectric filters integrated with VO<sub>2</sub> switches are designed, fabricated, and measured. The measurement results verify the tunability and feasibility of using the proposed tuning scheme to realize a relatively high-<italic>Q</i> VO<sub>2</sub> combline and dielectric resonator tunable filters that can maintain their <italic>Q</i> values over the tuning range.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1717-1725"},"PeriodicalIF":3.0,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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