Pub Date : 2024-06-27DOI: 10.1109/TCPMT.2024.3398908
P. V. Sitaraman;Vamsi Krishna Velidi;Arijit De
In the above article [1] , although there is no technical error in Fig. 13(b) , the frequency ranges in the pictorial representation for the highlighted portion (rectangular area outlined by a magenta-colored dotted line) and the zoomed figure are different. The main figure has a very wide frequency range from dc to 28 GHz. The zoomed portion has a very narrow frequency range from 2.9 to 3.2 GHz. Please note that the highlighted portion is just a representation, and hence, the frequency range is not exactly the same (one-to-one) for the zoomed figure, as it is very difficult to highlight a 400-MHz range over a 28-GHz span.
{"title":"Corrections to “Ultra-Wideband Spurious Radiation Suppression in Microstrip Antennas Using Integrated Uniplanar Compact Coupling Structure With Controllable Transmission-Zeros Matching Approach”","authors":"P. V. Sitaraman;Vamsi Krishna Velidi;Arijit De","doi":"10.1109/TCPMT.2024.3398908","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3398908","url":null,"abstract":"In the above article \u0000<xref>[1]</xref>\u0000, although there is no technical error in \u0000<xref>Fig. 13(b)</xref>\u0000, the frequency ranges in the pictorial representation for the highlighted portion (rectangular area outlined by a magenta-colored dotted line) and the zoomed figure are different. The main figure has a very wide frequency range from dc to 28 GHz. The zoomed portion has a very narrow frequency range from 2.9 to 3.2 GHz. Please note that the highlighted portion is just a representation, and hence, the frequency range is not exactly the same (one-to-one) for the zoomed figure, as it is very difficult to highlight a 400-MHz range over a 28-GHz span.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 6","pages":"1138-1138"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10576022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141474798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two ultracompact bandpass (UCB) filters have been proposed. To the best of the authors’ knowledge, the filter I is the minimum size microwave bandpass filter ever reported. The proposed circuits successfully integrate an integrated passive device (IPD) technique-based high-Q capacitor and energy coupling circuit with a printed circuit board (PCB) substrate. By creating both separate electric and magnetic coupling path (SEMCP) and source-load coupling path, two transmission zeros (TZs) on the stopband are generated. A wide stopband suppression and good passband selectivity are achieved by this technique. New energy coupling circuits are designed to reduce energy coupling losses of the compact filters; therefore, both compact size and low insertion loss (IL) can be achieved by the filters. Two particular examples of the filter are implemented and experimentally demonstrated. The results show a filter with a size of $0.55times 1.38$ mm2 ( $5.2times 10^{-4}~lambda _{g}^{2}$ at 3.7 GHz), an IL of 2.2 dB at center frequency and two TZs on the upper stopband. The other filter demonstrated with a size of $2.1times 1.32$ mm2 ( $2.7times 10^{-3}~lambda _{g}^{2}$ at 4.5 GHz), an IL of 1.81 dB at the center frequency and two controllable TZs on the stopband.
{"title":"Ultracompact Bandpass Filter With Multiple Transmission Zeros and Low Insertion Loss","authors":"Chenyin Zhou;Shuai Zhang;Sulei Fu;Weibiao Wang;Yu Guo","doi":"10.1109/TCPMT.2024.3420112","DOIUrl":"10.1109/TCPMT.2024.3420112","url":null,"abstract":"Two ultracompact bandpass (UCB) filters have been proposed. To the best of the authors’ knowledge, the filter I is the minimum size microwave bandpass filter ever reported. The proposed circuits successfully integrate an integrated passive device (IPD) technique-based high-Q capacitor and energy coupling circuit with a printed circuit board (PCB) substrate. By creating both separate electric and magnetic coupling path (SEMCP) and source-load coupling path, two transmission zeros (TZs) on the stopband are generated. A wide stopband suppression and good passband selectivity are achieved by this technique. New energy coupling circuits are designed to reduce energy coupling losses of the compact filters; therefore, both compact size and low insertion loss (IL) can be achieved by the filters. Two particular examples of the filter are implemented and experimentally demonstrated. The results show a filter with a size of \u0000<inline-formula> <tex-math>$0.55times 1.38$ </tex-math></inline-formula>\u0000 mm2 (\u0000<inline-formula> <tex-math>$5.2times 10^{-4}~lambda _{g}^{2}$ </tex-math></inline-formula>\u0000 at 3.7 GHz), an IL of 2.2 dB at center frequency and two TZs on the upper stopband. The other filter demonstrated with a size of \u0000<inline-formula> <tex-math>$2.1times 1.32$ </tex-math></inline-formula>\u0000 mm2 (\u0000<inline-formula> <tex-math>$2.7times 10^{-3}~lambda _{g}^{2}$ </tex-math></inline-formula>\u0000 at 4.5 GHz), an IL of 1.81 dB at the center frequency and two controllable TZs on the stopband.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1240-1253"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141524841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1109/TCPMT.2024.3408657
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2024.3408657","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3408657","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 6","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10576036","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141474915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1109/TCPMT.2024.3419782
Jong-Chan Park;Tae-Keun Lee
Plasma treatments change surface roughness and activate the functional groups on them. This study analyzes plasma effects on nickel-plated copper heat spreader with a reactive gas comprising argon and oxygen mixture and investigates the effects of plasma treatments and their resultant adhesion properties using atomic force microscopy (AFM), goniometer, X-ray photoelectron spectroscopy (XPS), and scanning acoustic tomography. After plasma treatment, the surface roughness and surface-area difference percentage (SADP) of the heat spreaders increase from 4.605 to 5.207 nm and from 1.876% to 2.668%, respectively. When compared with bare heat spreader surfaces, the surface energy of those that assist adhesion increases from 22.93 to 72.53 mN/m, and the amount of activated functional groups on them also increases by 1.79 × after plasma treatment. With an increase in SADP, surface energy, and the amount of activated functional groups, the thermal interface material (TIM) coverage increases and the delamination between TIM and the heat spreader improves after plasma treatment. Therefore, plasma treatment on heat spreaders is an effective method to improve the adhesion properties of TIMs, indicating improvements in the heat dissipation performance of flip-chip ball grid array-heat spreader (fcBGA-H) devices.
{"title":"Effects of Plasma Treatment on Ni-Plated Copper as a Heat Spreader for fcBGA-H Device","authors":"Jong-Chan Park;Tae-Keun Lee","doi":"10.1109/TCPMT.2024.3419782","DOIUrl":"10.1109/TCPMT.2024.3419782","url":null,"abstract":"Plasma treatments change surface roughness and activate the functional groups on them. This study analyzes plasma effects on nickel-plated copper heat spreader with a reactive gas comprising argon and oxygen mixture and investigates the effects of plasma treatments and their resultant adhesion properties using atomic force microscopy (AFM), goniometer, X-ray photoelectron spectroscopy (XPS), and scanning acoustic tomography. After plasma treatment, the surface roughness and surface-area difference percentage (SADP) of the heat spreaders increase from 4.605 to 5.207 nm and from 1.876% to 2.668%, respectively. When compared with bare heat spreader surfaces, the surface energy of those that assist adhesion increases from 22.93 to 72.53 mN/m, and the amount of activated functional groups on them also increases by 1.79 × after plasma treatment. With an increase in SADP, surface energy, and the amount of activated functional groups, the thermal interface material (TIM) coverage increases and the delamination between TIM and the heat spreader improves after plasma treatment. Therefore, plasma treatment on heat spreaders is an effective method to improve the adhesion properties of TIMs, indicating improvements in the heat dissipation performance of flip-chip ball grid array-heat spreader (fcBGA-H) devices.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1511-1519"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10574875","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141524842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1109/TCPMT.2024.3419836
Karan Pawar;Harsh Pandey;Pradeep Dixit
This study presents the crucial process of achieving conformal electroless seed layer deposition within blind glass vias. A cost-effective and room-temperature-based ultrasonic machining (USM) method was employed to fabricate blind holes in a glass substrate, demonstrating its viability for large-scale production. During electroless deposition, manual agitation led to nonconformal deposition in blind holes with aspect ratios (ARs) exceeding 1. The nonconformal seed layer results from the entrapment of air within the holes, impeding the uniform distribution of the electroless solution. Ultrasonic agitation was applied to effectively remove trapped air through cavitation induced by pulsating waves. This breakthrough enabled unimpeded access of the electroless solution into the blind holes, resulting in consistent and uniform electroless seed layer deposition. Moreover, the technique was successfully extended to achieve conformal seed layer deposition in a $6times 6$ array of through holes with an AR of nearly 4.3. This approach resolves the nonconformal seed layer deposition issue and offers a reliable, cost-effective means for fabricating embedded passive devices.
本研究介绍了在玻璃盲孔内实现保形无电解种子层沉积的关键过程。研究采用了一种经济高效的室温超声波加工（USM）方法在玻璃基板上制造盲孔，证明了该方法在大规模生产中的可行性。在无电解沉积过程中，手动搅拌会导致纵横比（AR）超过 1 的盲孔出现不规则沉积。不规则的种子层是由于孔内夹带空气，阻碍了化学溶液的均匀分布。使用超声波搅拌可通过脉动波引起的空化作用有效去除滞留的空气。这一突破使得无电解溶液能够畅通无阻地进入盲孔，从而实现了稳定、均匀的无电解种子层沉积。此外，该技术还成功扩展到在 AR 值接近 4.3 的 $6times 6$ 通孔阵列中实现保形种子层沉积。这种方法解决了非共形种子层沉积的问题，为制造嵌入式无源器件提供了一种可靠、经济高效的方法。
{"title":"Continuous Electroless Seed Layer Deposition in Through-Glass-Vias by Ultrasonic Agitation","authors":"Karan Pawar;Harsh Pandey;Pradeep Dixit","doi":"10.1109/TCPMT.2024.3419836","DOIUrl":"10.1109/TCPMT.2024.3419836","url":null,"abstract":"This study presents the crucial process of achieving conformal electroless seed layer deposition within blind glass vias. A cost-effective and room-temperature-based ultrasonic machining (USM) method was employed to fabricate blind holes in a glass substrate, demonstrating its viability for large-scale production. During electroless deposition, manual agitation led to nonconformal deposition in blind holes with aspect ratios (ARs) exceeding 1. The nonconformal seed layer results from the entrapment of air within the holes, impeding the uniform distribution of the electroless solution. Ultrasonic agitation was applied to effectively remove trapped air through cavitation induced by pulsating waves. This breakthrough enabled unimpeded access of the electroless solution into the blind holes, resulting in consistent and uniform electroless seed layer deposition. Moreover, the technique was successfully extended to achieve conformal seed layer deposition in a \u0000<inline-formula> <tex-math>$6times 6$ </tex-math></inline-formula>\u0000 array of through holes with an AR of nearly 4.3. This approach resolves the nonconformal seed layer deposition issue and offers a reliable, cost-effective means for fabricating embedded passive devices.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1292-1299"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141524840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1109/TCPMT.2024.3408661
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2024.3408661","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3408661","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 6","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10576019","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141474872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-27DOI: 10.1109/TCPMT.2024.3408663
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2024.3408663","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3408663","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 6","pages":"C4-C4"},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10575935","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141474916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-26DOI: 10.1109/TCPMT.2024.3419712
Wenyi Shao;Bo Yang;Naoki Shinohara
We introduce an all-dielectric 3-D-printed multifocusing truncated Gutman lens integrated with a high-efficient MMIC class-F load GaAs rectenna for mm-Wave Battery-free IoT applications at 24 GHz in this article. We conduct a detailed analysis of the multifocusing performance of the proposed lens structure using full-wave simulation, revealing the varying position of the focusing spot on the back surface of lens in response to the transmitted beam direction. Benefiting from the cost-effective 3-D printing technique, we fabricate a truncated Gutman lens prototype based on the automatic stacking of perforated dielectric cubes. The near-field phase transform experiment at 24 GHz was carried out to verify the multifocusing performance of the fabricated lens prototype. In addition, unlike the traditional rectifier using a capacitor in previous studies, we design and fabricate a GaAs MMIC rectenna using a single-shunt full-wave rectifier circuit with an F-class load at 24 GHz, achieving a measured maximum rectification efficiency of 47.9% with an input power of 210 mW and a $120 , Omega $ resistive load. The mm-Wave wireless power transfer (WPT) experiment further demonstrates the potential of the proposed lens structure for practical mm-Wave IoT WPT applications by enhancing conversion efficiency and reducing sensitivity to incident beam angles.
{"title":"3-D Printed Multifocusing Truncated Gutman Lens With High-Efficient MMIC Class-F Load GaAs Rectenna for mm-Wave Battery-Free IoT Application","authors":"Wenyi Shao;Bo Yang;Naoki Shinohara","doi":"10.1109/TCPMT.2024.3419712","DOIUrl":"10.1109/TCPMT.2024.3419712","url":null,"abstract":"We introduce an all-dielectric 3-D-printed multifocusing truncated Gutman lens integrated with a high-efficient MMIC class-F load GaAs rectenna for mm-Wave Battery-free IoT applications at 24 GHz in this article. We conduct a detailed analysis of the multifocusing performance of the proposed lens structure using full-wave simulation, revealing the varying position of the focusing spot on the back surface of lens in response to the transmitted beam direction. Benefiting from the cost-effective 3-D printing technique, we fabricate a truncated Gutman lens prototype based on the automatic stacking of perforated dielectric cubes. The near-field phase transform experiment at 24 GHz was carried out to verify the multifocusing performance of the fabricated lens prototype. In addition, unlike the traditional rectifier using a capacitor in previous studies, we design and fabricate a GaAs MMIC rectenna using a single-shunt full-wave rectifier circuit with an F-class load at 24 GHz, achieving a measured maximum rectification efficiency of 47.9% with an input power of 210 mW and a \u0000<inline-formula> <tex-math>$120 , Omega $ </tex-math></inline-formula>\u0000 resistive load. The mm-Wave wireless power transfer (WPT) experiment further demonstrates the potential of the proposed lens structure for practical mm-Wave IoT WPT applications by enhancing conversion efficiency and reducing sensitivity to incident beam angles.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1319-1325"},"PeriodicalIF":2.3,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141509769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-24DOI: 10.1109/TCPMT.2024.3418648
Raymond A. Haltli;Eric Ou;Christopher D. Nordquist;Susan M. Clark;Melissa C. Revelle
Stringent physical requirements need to be met for the high-performing surface-electrode ion traps used in quantum computing and timekeeping. In particular, these traps must survive a high-temperature environment for vacuum chamber preparation and support high RF voltage on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multiday bake at $200~^{circ }$ C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to RF breakdown events. Through high-temperature experiments, we conclude that an ideal metal stack for ion traps is Ti/Pt/Au (20/100/250 nm), which allows for a cumulative bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakeable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.
用于量子计算和计时的高性能表面电极离子阱需要满足严格的物理要求。特别是，这些阱必须能在真空室制备的高温环境中生存，并能在紧密间隔的电极上支持高射频电压。由于在铝垫上使用金丝键，金属间的生长会导致金丝键因断裂或高电阻而失效，从而将阱组件的使用寿命限制在 200~^{circ }$ C 的单次多日烘烤。通过高温实验，我们得出结论，离子阱的理想金属堆栈是 Ti/Pt/Au (20/100/250 nm)，它可以实现大约 86 天的累计可烘烤时间，而不会影响阱电压性能。离子阱可烘烤寿命的延长将使真空硬件升级时不再需要丢弃功能正常的离子阱，这将大大有利于离子阱实验。
{"title":"Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface-Electrode Ion Traps","authors":"Raymond A. Haltli;Eric Ou;Christopher D. Nordquist;Susan M. Clark;Melissa C. Revelle","doi":"10.1109/TCPMT.2024.3418648","DOIUrl":"10.1109/TCPMT.2024.3418648","url":null,"abstract":"Stringent physical requirements need to be met for the high-performing surface-electrode ion traps used in quantum computing and timekeeping. In particular, these traps must survive a high-temperature environment for vacuum chamber preparation and support high RF voltage on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multiday bake at \u0000<inline-formula> <tex-math>$200~^{circ }$ </tex-math></inline-formula>\u0000C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to RF breakdown events. Through high-temperature experiments, we conclude that an ideal metal stack for ion traps is Ti/Pt/Au (20/100/250 nm), which allows for a cumulative bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakeable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1141-1148"},"PeriodicalIF":2.3,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10570227","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141509770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Metal foams appear as innovative solutions for cooling high-density power electronic systems. In these assemblies, the foam is currently soldered on a copper substrate. However, the temperature of solders is limited and their aging under high thermomechanical constraints is a clear weakness of this solution. A novel way to attach metal foams to copper substrates is presented in this article, the thermocompression of a nanoporous copper deposit. The obtained attachments show good densification of the deposit, and the conducted shear tests show an increase in the contact mechanical strength with increasing thermocompression time. In addition, using a dynamic methodology, the thermal contact resistance of such joints is evaluated which shows results similar to those obtained on soldered joints.
{"title":"Evaluation of Thermocompressed Nanoporous Copper Deposit to Replace Soldering for Power Electronic Metal Foam Heat Sinks","authors":"Goulven Janod;Lucas Chachay;Jonathan Schoenleber;Yvan Avenas;Didier Bouvard;Rémi Daudin;Jean-Michel Missiaen;Marie-Pierre Gigandet;Jean-Yves Hihn;Rabih Khazaka","doi":"10.1109/TCPMT.2024.3418673","DOIUrl":"10.1109/TCPMT.2024.3418673","url":null,"abstract":"Metal foams appear as innovative solutions for cooling high-density power electronic systems. In these assemblies, the foam is currently soldered on a copper substrate. However, the temperature of solders is limited and their aging under high thermomechanical constraints is a clear weakness of this solution. A novel way to attach metal foams to copper substrates is presented in this article, the thermocompression of a nanoporous copper deposit. The obtained attachments show good densification of the deposit, and the conducted shear tests show an increase in the contact mechanical strength with increasing thermocompression time. In addition, using a dynamic methodology, the thermal contact resistance of such joints is evaluated which shows results similar to those obtained on soldered joints.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1359-1366"},"PeriodicalIF":2.3,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141524843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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