Pub Date : 2024-07-15DOI: 10.1109/TCPMT.2024.3428930
Xiao Yang;Xiao-Long Huang;Liang Zhou;Zi-Qi Zhang;Jun-Zhe Zhao;Jun-Fa Mao
In this study, we present the design, fabrication, and measurements of a 3-D heterogeneous integrated RF-module at W-band. A 3-D transition structure based on micro-bumps is fabricated and measured to obtain the transition loss of one bump. One micro-bump has an insertion loss of 0.21 dB at the W-band. A packaged filter and a benzocyclobutene (BCB)-based back cavity antenna are designed and analyzed in detail. The filter has a 2.6-dB insertion loss at 94 GHz with four transmission zeros (TZs) and a $2.14f_{0}~10$ -dB stopband. An extra loss of 0.9 dB is found after packaging. Then, the filter and antenna are integrated with a SiGe-based low-noise amplifier (LNA) and a mixer to realize a fully packaged receiver by using our in-house Si-based micro-electromechanical systems (MEMS) through-silicon-trench (TST) technology and multilayer photosensitive composite film. The proposed 3-D heterogeneous integrated receiver is measured on-wafer. This low-loss packaging solution can be further used in millimeter-wave communication or radar systems.
在本研究中，我们介绍了 W 波段三维异质集成射频模块的设计、制造和测量。我们制作并测量了基于微凸块的三维过渡结构，从而获得了一个凸块的过渡损耗。一个微凸块在 W 波段的插入损耗为 0.21 dB。设计并详细分析了一个封装滤波器和一个基于苯并环丁烯（BCB）的背腔天线。滤波器在 94 GHz 时的插入损耗为 2.6 分贝，具有四个传输零点（TZ）和一个 2.14f_{0}~10$ 分贝的阻带。封装后的额外损耗为 0.9 dB。然后，利用我们自主研发的硅基微机电系统（MEMS）通硅沟（TST）技术和多层光敏复合膜，将滤波器和天线与硅基低噪声放大器（LNA）和混频器集成在一起，实现了完全封装的接收器。所提出的三维异质集成接收器是在晶片上测量的。这种低损耗封装解决方案可进一步用于毫米波通信或雷达系统。
{"title":"A 3-D Heterogeneously Integrated Application of the RF-Module With Micro-Bump Filter and Embedded AiP at W-Band","authors":"Xiao Yang;Xiao-Long Huang;Liang Zhou;Zi-Qi Zhang;Jun-Zhe Zhao;Jun-Fa Mao","doi":"10.1109/TCPMT.2024.3428930","DOIUrl":"10.1109/TCPMT.2024.3428930","url":null,"abstract":"In this study, we present the design, fabrication, and measurements of a 3-D heterogeneous integrated RF-module at W-band. A 3-D transition structure based on micro-bumps is fabricated and measured to obtain the transition loss of one bump. One micro-bump has an insertion loss of 0.21 dB at the W-band. A packaged filter and a benzocyclobutene (BCB)-based back cavity antenna are designed and analyzed in detail. The filter has a 2.6-dB insertion loss at 94 GHz with four transmission zeros (TZs) and a \u0000<inline-formula> <tex-math>$2.14f_{0}~10$ </tex-math></inline-formula>\u0000-dB stopband. An extra loss of 0.9 dB is found after packaging. Then, the filter and antenna are integrated with a SiGe-based low-noise amplifier (LNA) and a mixer to realize a fully packaged receiver by using our in-house Si-based micro-electromechanical systems (MEMS) through-silicon-trench (TST) technology and multilayer photosensitive composite film. The proposed 3-D heterogeneous integrated receiver is measured on-wafer. This low-loss packaging solution can be further used in millimeter-wave communication or radar systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1422-1433"},"PeriodicalIF":2.3,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141720950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1109/TCPMT.2024.3424783
Bukun Xu;Yazi Cao;Bo Yuan;Shichang Chen;Gaofeng Wang
Two compact bandpass filters (BPFs) based on the coupling-enhanced transformer and metamaterial lowpass structure are presented. The coupling-enhanced transformer is introduced to reduce the insertion loss in the desired passband. Moreover, for the first time, a new metamaterial lowpass structure is proposed to generate multiple transmission zeros (TZs) and can achieve high stopband suppression in a wide upper stopband. Its even-odd mode equivalent circuits are discussed, and its Bloch impedance and dispersion are analyzed. The first BPF operates at 1.85 GHz and the second BPF operates at 2.45 GHz, which can achieve an insertion loss of less than 1.0 and 0.8 dB, respectively. These two BPFs can achieve 30 dB attenuation from 4.7 to 7.5 GHz and 20 dB attenuation up to $7.2~f_{0}$ , respectively. Both designs have a compact size of less than $1.3times 10^{-2}~lambda _{0} times 6.5times 10^{-3}~lambda _{0}$ . Two prototypes are fabricated using Si-based integrated passive devices (IPDs) technology and validated with measurements.
{"title":"Compact IPD Bandpass Filters Based on Coupling-Enhanced Transformer and Metamaterial Lowpass Structure","authors":"Bukun Xu;Yazi Cao;Bo Yuan;Shichang Chen;Gaofeng Wang","doi":"10.1109/TCPMT.2024.3424783","DOIUrl":"10.1109/TCPMT.2024.3424783","url":null,"abstract":"Two compact bandpass filters (BPFs) based on the coupling-enhanced transformer and metamaterial lowpass structure are presented. The coupling-enhanced transformer is introduced to reduce the insertion loss in the desired passband. Moreover, for the first time, a new metamaterial lowpass structure is proposed to generate multiple transmission zeros (TZs) and can achieve high stopband suppression in a wide upper stopband. Its even-odd mode equivalent circuits are discussed, and its Bloch impedance and dispersion are analyzed. The first BPF operates at 1.85 GHz and the second BPF operates at 2.45 GHz, which can achieve an insertion loss of less than 1.0 and 0.8 dB, respectively. These two BPFs can achieve 30 dB attenuation from 4.7 to 7.5 GHz and 20 dB attenuation up to \u0000<inline-formula> <tex-math>$7.2~f_{0}$ </tex-math></inline-formula>\u0000, respectively. Both designs have a compact size of less than \u0000<inline-formula> <tex-math>$1.3times 10^{-2}~lambda _{0} times 6.5times 10^{-3}~lambda _{0}$ </tex-math></inline-formula>\u0000. Two prototypes are fabricated using Si-based integrated passive devices (IPDs) technology and validated with measurements.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 9","pages":"1630-1637"},"PeriodicalIF":2.3,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141576936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The electronics industry is increasingly prioritizing the reliability of SnAgCu (SAC)-based alloys due to environmental concerns related to lead-based alloys. Considering the frequent occurrence of drops during the typical use of portable electronic devices, guaranteeing robust board-level drop shock reliability becomes vital for ensuring their optimal performance and longevity. Traditionally, drop shock tests have predominantly been conducted at room temperature, which does not fully simulate real-world conditions where electronic circuits are subjected to operational or environmental thermal strains during the normal operation. To address this knowledge gap, this study aims to conduct drop shock tests at elevated temperatures, ensuring the reliability of solder joints in practical applications. In this study, ball grid array (BGA) assemblies containing SAC305 solder alloy were tested at various temperatures. The drop shock experiments were performed according to the Joint Electron Device Engineering Council (JEDEC) drop test standard JESD22- B111A, with a peak acceleration of 1500 G and a pulse duration of 0.5 ms. Subsequently, the drop shock reliability of the solder joints under each test condition was assessed using the Weibull analysis. In addition, the Arrhenius model was applied to develop a drop life prediction model. Furthermore, comprehensive microscopy analysis was performed to identify the failure modes and trends with increasing temperature. The results indicated that SAC305 exhibits best performance at room temperature (25 ° C). However, its drop shock lifespan significantly decreases as the temperature rises, with reductions of 64%, 76%, and 78% at 50 ° C, 75 ° C, and 100 ° C, respectively. Moreover, a failure mode transition was observed with an increase in temperature.
{"title":"Drop Shock Testing Analysis at Elevated Temperature: Assessing SAC305 Solder Alloy Reliability in BGA Assemblies","authors":"Palash Pranav Vyas;Ali Alahmer;Sergio Bolanos;Seyed Soroosh Alavi;Sa’d Hamasha","doi":"10.1109/TCPMT.2024.3424343","DOIUrl":"10.1109/TCPMT.2024.3424343","url":null,"abstract":"The electronics industry is increasingly prioritizing the reliability of SnAgCu (SAC)-based alloys due to environmental concerns related to lead-based alloys. Considering the frequent occurrence of drops during the typical use of portable electronic devices, guaranteeing robust board-level drop shock reliability becomes vital for ensuring their optimal performance and longevity. Traditionally, drop shock tests have predominantly been conducted at room temperature, which does not fully simulate real-world conditions where electronic circuits are subjected to operational or environmental thermal strains during the normal operation. To address this knowledge gap, this study aims to conduct drop shock tests at elevated temperatures, ensuring the reliability of solder joints in practical applications. In this study, ball grid array (BGA) assemblies containing SAC305 solder alloy were tested at various temperatures. The drop shock experiments were performed according to the Joint Electron Device Engineering Council (JEDEC) drop test standard JESD22- B111A, with a peak acceleration of 1500 G and a pulse duration of 0.5 ms. Subsequently, the drop shock reliability of the solder joints under each test condition was assessed using the Weibull analysis. In addition, the Arrhenius model was applied to develop a drop life prediction model. Furthermore, comprehensive microscopy analysis was performed to identify the failure modes and trends with increasing temperature. The results indicated that SAC305 exhibits best performance at room temperature (25 ° C). However, its drop shock lifespan significantly decreases as the temperature rises, with reductions of 64%, 76%, and 78% at 50 ° C, 75 ° C, and 100 ° C, respectively. Moreover, a failure mode transition was observed with an increase in temperature.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1384-1393"},"PeriodicalIF":2.3,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141576935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.1109/TCPMT.2024.3424277
Kexin Hu;Yi Zhou;Suresh K. Sitaraman;Manos M. Tentzeris
This article presents the first and most comprehensive design, fabrication, and reliability evaluation of the electrical and mechanical performance of fully inkjet-printed 3-D “ramp” interconnects. Inkjet-printed interconnects feature superior RF performance and better mechanical reliability for heterogeneous integration for 5G mmWave flexible electronics packaging. The packaged systems are required to survive various flexing conditions over a large number of cyclic bending for conformal applications. In this work, ramp interconnects are designed with excellent and reliable performance for flexible packaging over the 20–40-GHz frequency band. A test vehicle of a monolithic microwave integrated circuit (MMIC) attenuator die placed in the middle of two microstrip lines is used, where ramp interconnects are fabricated by inkjet printing SU8 dielectric ink to form ramp base and inkjet printing silver nanoparticle (SNP) ink for conductive interconnects to build the connection between the die and microstrip lines. The fabricated sample exhibits a superior $S_{21}$ performance with less than 1.16-dB insertion loss per interconnect throughout the whole operation range from 20 to 40 GHz. Monotonic bending tests are conducted over mandrels of various radii ranging from 50 to 10 mm, and the designed ramp interconnects are able to maintain robust transmission with a minimum variation of less than 0.15-dB insertion loss per interconnect. Moreover, the fabricated samples are able to survive over 20 000 times of cyclic bending tests over the mandrel of 10-mm radius, with less than 0.2-dB additional loss from each interconnect. The proposed design takes advantage of a low-cost, on-demand additive manufacturing method by selectively depositing SU8 ink layer by layer with varying dimensions to enable rugged ramp structures for curved mounting platforms. The results reported in this article could enable rapid production of high-performance and reliable flexible system-on-package (SoP) and multichip module (MCM) designs and build the foundation of next-generation 5G mmWave flexible hybrid electronics (FHE) technologies for various applications.
{"title":"Flexible/Conformal Inkjet-Printed 3-D “Ramp” Interconnects for 5G/mmWave System-on-Package Designs and Wearable Applications","authors":"Kexin Hu;Yi Zhou;Suresh K. Sitaraman;Manos M. Tentzeris","doi":"10.1109/TCPMT.2024.3424277","DOIUrl":"10.1109/TCPMT.2024.3424277","url":null,"abstract":"This article presents the first and most comprehensive design, fabrication, and reliability evaluation of the electrical and mechanical performance of fully inkjet-printed 3-D “ramp” interconnects. Inkjet-printed interconnects feature superior RF performance and better mechanical reliability for heterogeneous integration for 5G mmWave flexible electronics packaging. The packaged systems are required to survive various flexing conditions over a large number of cyclic bending for conformal applications. In this work, ramp interconnects are designed with excellent and reliable performance for flexible packaging over the 20–40-GHz frequency band. A test vehicle of a monolithic microwave integrated circuit (MMIC) attenuator die placed in the middle of two microstrip lines is used, where ramp interconnects are fabricated by inkjet printing SU8 dielectric ink to form ramp base and inkjet printing silver nanoparticle (SNP) ink for conductive interconnects to build the connection between the die and microstrip lines. The fabricated sample exhibits a superior \u0000<inline-formula> <tex-math>$S_{21}$ </tex-math></inline-formula>\u0000 performance with less than 1.16-dB insertion loss per interconnect throughout the whole operation range from 20 to 40 GHz. Monotonic bending tests are conducted over mandrels of various radii ranging from 50 to 10 mm, and the designed ramp interconnects are able to maintain robust transmission with a minimum variation of less than 0.15-dB insertion loss per interconnect. Moreover, the fabricated samples are able to survive over 20 000 times of cyclic bending tests over the mandrel of 10-mm radius, with less than 0.2-dB additional loss from each interconnect. The proposed design takes advantage of a low-cost, on-demand additive manufacturing method by selectively depositing SU8 ink layer by layer with varying dimensions to enable rugged ramp structures for curved mounting platforms. The results reported in this article could enable rapid production of high-performance and reliable flexible system-on-package (SoP) and multichip module (MCM) designs and build the foundation of next-generation 5G mmWave flexible hybrid electronics (FHE) technologies for various applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1329-1336"},"PeriodicalIF":2.3,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141576938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-04DOI: 10.1109/tcpmt.2024.3423003
Jiahua Lyu, Hong Cai Chen, Qingsha S. Cheng, Yang Zhang, Yaping Du
{"title":"Rapid Design of Litz Wire Using Surrogate Assisted Optimization Embedding Adjacent Trust Region","authors":"Jiahua Lyu, Hong Cai Chen, Qingsha S. Cheng, Yang Zhang, Yaping Du","doi":"10.1109/tcpmt.2024.3423003","DOIUrl":"https://doi.org/10.1109/tcpmt.2024.3423003","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"55 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141546675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TCPMT.2024.3428277
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2024.3428277","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3428277","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"C4-C4"},"PeriodicalIF":2.3,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638436","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TCPMT.2024.3421585
Georg Elsinger;Herman Oprins;Vladimir Cherman;Geert Van der Plas;Eric Beyne;Ingrid De Wolf
As high-power electronics cooling for high heat fluxes above 100 W/cm $^{mathbf {2}}$ continues to become a more and more pressing matter, work to provide an efficient and effective cooling solution in turn also continues. In the ecosystem of active liquid cooling solutions, it is the cooling performance that is provided within a given flow rate and pressure drop budget that determines efficiency. Liquid jet impingement on the bare die has been proven to provide good cooling performance that is not impeded by the thermal resistance of thermal interface materials. However, system optimizations are also necessary to provide the desired cooling performance within the restrictions of flow rate and pressure drop. A modeling study and experimental demonstrations were done in this work to showcase improvement options within restricted operating conditions. The modeling study shows that the adjustment of inlet- and outlet-nozzle diameter, nozzle-to-target spacing, and nozzle pitch allows for optimizing the achieved heat transfer coefficient at given operating conditions. Based on this modeling study, a reference cooler and different improved demonstrators were built, and within the same budget for coolant flow rate and driving pressure drop, an improvement of effective heat transfer coefficient by 122% from 4.9 to 10.4 W/cm $^{mathbf {2}}cdot $ K was achieved.
{"title":"Modeling-Based Improvement of Microscale Liquid Jet Impingement Cooling","authors":"Georg Elsinger;Herman Oprins;Vladimir Cherman;Geert Van der Plas;Eric Beyne;Ingrid De Wolf","doi":"10.1109/TCPMT.2024.3421585","DOIUrl":"10.1109/TCPMT.2024.3421585","url":null,"abstract":"As high-power electronics cooling for high heat fluxes above 100 W/cm\u0000<inline-formula> <tex-math>$^{mathbf {2}}$ </tex-math></inline-formula>\u0000 continues to become a more and more pressing matter, work to provide an efficient and effective cooling solution in turn also continues. In the ecosystem of active liquid cooling solutions, it is the cooling performance that is provided within a given flow rate and pressure drop budget that determines efficiency. Liquid jet impingement on the bare die has been proven to provide good cooling performance that is not impeded by the thermal resistance of thermal interface materials. However, system optimizations are also necessary to provide the desired cooling performance within the restrictions of flow rate and pressure drop. A modeling study and experimental demonstrations were done in this work to showcase improvement options within restricted operating conditions. The modeling study shows that the adjustment of inlet- and outlet-nozzle diameter, nozzle-to-target spacing, and nozzle pitch allows for optimizing the achieved heat transfer coefficient at given operating conditions. Based on this modeling study, a reference cooler and different improved demonstrators were built, and within the same budget for coolant flow rate and driving pressure drop, an improvement of effective heat transfer coefficient by 122% from 4.9 to 10.4 W/cm\u0000<inline-formula> <tex-math>$^{mathbf {2}}cdot $ </tex-math></inline-formula>\u0000K was achieved.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1180-1188"},"PeriodicalIF":2.3,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141509772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TCPMT.2024.3428275
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2024.3428275","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3428275","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638435","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141998657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TCPMT.2024.3428271
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2024.3428271","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3428271","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638439","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141998667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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