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A D-Band 5-bit SiGe Active Bidirectional Phase Shifter Achieving 0.09-dB RMS Gain Error and 0.86° RMS Phase Error 一种实现0.09 db增益误差和0.86°相位误差的d波段5位SiGe有源双向移相器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-25 DOI: 10.1109/TCSII.2025.3614490
Lingzheng Kong;Jixin Chen;Peigen Zhou;Zhihua Wang;Chang Shu;Dawei Tang;Rui Zhou;Jirui Li;Qianqi Meng;Pinpin Yan;Wei Hong
This brief presents a D-band active bidirectional vector-modulation phase shifter (PS) based on a phase inverter embedded variable gain amplifier (PI-VGA). A Lange coupler and self-shielded Marchand baluns are utilized for IQ signal generation and combination, achieving bidirectional low-loss impedance matching. The switchless bidirectional PI-VGA incorporates compensation networks for parasitic reduction and intrinsic gain enhancement, enabling amplitude modulation and quadrant selection. The PS supports 5-bit 360° bidirectional phase shifting over 112-145 GHz. The measured minimum insertion losses are 7.5 dB and 9.5 dB for forward and reverse operations, with RMS gain errors of 0.09 dB. The measured minimum RMS phase errors for both directions are 0.91° and 0.86°. The measured input 1-dB compression point amounts to 8 dBm and the core area of the PS is only 0.256 mm2, with an average power consumption of 81 mW under 3.3 V power supply. To the best of the authors’ knowledge, this is the first reported D-band active bidirectional PS, and the PS is suitable for terahertz time-division duplexing (TDD) phased arrays, offering a compact size and reduced insertion loss.
本文介绍了一种基于相位逆变器嵌入式可变增益放大器(PI-VGA)的d波段有源双向矢量调制移相器(PS)。利用兰格耦合器和自屏蔽马尔尚平衡器进行IQ信号的产生和组合,实现双向低损耗阻抗匹配。无开关双向PI-VGA集成了补偿网络,用于寄生减少和固有增益增强,实现幅度调制和象限选择。PS支持112-145 GHz的5位360°双向移相。测量到的正向和反向操作的最小插入损耗分别为7.5 dB和9.5 dB,有效值增益误差为0.09 dB。两个方向的最小均方根相位误差分别为0.91°和0.86°。测量的输入1db压缩点为8dbm, PS的核心面积仅为0.256 mm2,在3.3 V电源下平均功耗为81 mW。据作者所知,这是第一个报道的d波段有源双向PS,并且PS适用于太赫兹时分双工(TDD)相控阵,具有紧凑的尺寸和减少的插入损耗。
{"title":"A D-Band 5-bit SiGe Active Bidirectional Phase Shifter Achieving 0.09-dB RMS Gain Error and 0.86° RMS Phase Error","authors":"Lingzheng Kong;Jixin Chen;Peigen Zhou;Zhihua Wang;Chang Shu;Dawei Tang;Rui Zhou;Jirui Li;Qianqi Meng;Pinpin Yan;Wei Hong","doi":"10.1109/TCSII.2025.3614490","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3614490","url":null,"abstract":"This brief presents a D-band active bidirectional vector-modulation phase shifter (PS) based on a phase inverter embedded variable gain amplifier (PI-VGA). A Lange coupler and self-shielded Marchand baluns are utilized for IQ signal generation and combination, achieving bidirectional low-loss impedance matching. The switchless bidirectional PI-VGA incorporates compensation networks for parasitic reduction and intrinsic gain enhancement, enabling amplitude modulation and quadrant selection. The PS supports 5-bit 360° bidirectional phase shifting over 112-145 GHz. The measured minimum insertion losses are 7.5 dB and 9.5 dB for forward and reverse operations, with RMS gain errors of 0.09 dB. The measured minimum RMS phase errors for both directions are 0.91° and 0.86°. The measured input 1-dB compression point amounts to 8 dBm and the core area of the PS is only 0.256 mm<sup>2</sup>, with an average power consumption of 81 mW under 3.3 V power supply. To the best of the authors’ knowledge, this is the first reported D-band active bidirectional PS, and the PS is suitable for terahertz time-division duplexing (TDD) phased arrays, offering a compact size and reduced insertion loss.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1725-1729"},"PeriodicalIF":4.9,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Circuits and Systems Society Information IEEE电路与系统学会信息
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-25 DOI: 10.1109/TCSII.2025.3607550
{"title":"IEEE Circuits and Systems Society Information","authors":"","doi":"10.1109/TCSII.2025.3607550","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3607550","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 10","pages":"C3-C3"},"PeriodicalIF":4.9,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11180174","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information IEEE电路与系统汇刊——II:快报简报出版信息
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-25 DOI: 10.1109/TCSII.2025.3607552
{"title":"IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information","authors":"","doi":"10.1109/TCSII.2025.3607552","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3607552","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 10","pages":"C2-C2"},"PeriodicalIF":4.9,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11180173","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Extraction and Packing Modules for Posit Multipliers 正乘法器的高效提取和填充模块
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-24 DOI: 10.1109/TCSII.2025.3613399
Tong Li;Honglan Jiang;Zhou Wang;Qin Wang;Jianfei Jiang;Zhigang Mao
This brief presents novel optimizations of the extraction and packing modules in posit arithmetic units. In the extraction module, a customized leading zero/one anticipator (LZA/LOA) is integrated with the incrementer to parallelize the 2’s complement operation and leading zero/one detection, which in turn reduces the critical path delay. The packing module is streamlined by merging two operations into a single incrementer step, leading to more compact hardware. To further improve the power efficiency, the output signals of the extraction module are synchronized using latches, effectively suppressing glitch propagation. Based on the proposed extraction and packing modules, 8-bit and 16-bit posit multipliers are implemented in TSMC 45 nm technology. Post-layout results show that the proposed posit multipliers achieve up to 46.14%–52.18% reduction in power–delay product (PDP) compared with state-of-the-art designs.
本文简要介绍了在正算术单元中提取和包装模块的新优化。在提取模块中,定制的前导零/一预估器(LZA/LOA)与增量器集成,实现了2的补码运算和前导零/一检测的并行化,从而减少了关键路径延迟。包装模块通过将两个操作合并到单个增量步骤中来简化,从而导致更紧凑的硬件。为了进一步提高功率效率,提取模块的输出信号采用锁存器同步,有效地抑制了故障传播。基于所提出的提取和封装模块,采用台积电45nm工艺实现了8位和16位正数乘法器。布局后结果表明,与最先进的设计相比,所提出的正数乘法器可将功率延迟积(PDP)降低46.14%-52.18%。
{"title":"Efficient Extraction and Packing Modules for Posit Multipliers","authors":"Tong Li;Honglan Jiang;Zhou Wang;Qin Wang;Jianfei Jiang;Zhigang Mao","doi":"10.1109/TCSII.2025.3613399","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3613399","url":null,"abstract":"This brief presents novel optimizations of the extraction and packing modules in posit arithmetic units. In the extraction module, a customized leading zero/one anticipator (LZA/LOA) is integrated with the incrementer to parallelize the 2’s complement operation and leading zero/one detection, which in turn reduces the critical path delay. The packing module is streamlined by merging two operations into a single incrementer step, leading to more compact hardware. To further improve the power efficiency, the output signals of the extraction module are synchronized using latches, effectively suppressing glitch propagation. Based on the proposed extraction and packing modules, 8-bit and 16-bit posit multipliers are implemented in TSMC 45 nm technology. Post-layout results show that the proposed posit multipliers achieve up to 46.14%–52.18% reduction in power–delay product (PDP) compared with state-of-the-art designs.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1765-1769"},"PeriodicalIF":4.9,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Reconfigurable 3-Level Buck Converter With Supply Voltage Dynamic Split for Loop-Free Rapid VCF-Balancing and Dead-Zone Seamless Transition 用于无环路快速vcf平衡和死区无缝过渡的电源电压动态分路可重构3电平降压变换器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-22 DOI: 10.1109/TCSII.2025.3613137
Hyunjun Park;Minsu Kim;Woojoong Jung;Junho Song;Sung-Min Yoo;Jun-Hyeok Yang;Michael Choi;Jongshin Shin;Hyung-Min Lee
This brief presents a supply voltage ( $V_{mathbf {IN}}$ ) dynamic split to overcome practical limitations of multi-level (ML) buck converters. The ML buck converters using flying capacitors ( $C_{mathbf {F}}$ ) suffer from both $C_{mathbf {F}}$ voltage ( $V_{mathbf {CF}}$ ) imbalance and random switching at near dead-zone conversion ratio (CR $= V_{mathbf {OUT}}$ / $V_{mathbf {IN}}$ ). The proposed 3-level buck converter with input capacitor ( $C_{mathbf {IN}}$ ) dynamic reuse adopts $V_{mathbf {IN}}$ half-split balancing (VHSB) for loop-free rapid $V_{mathbf {CF}}$ balancing. In addition, $V_{mathbf {IN}}$ quarter-split transition (VQST) is applied to prevent irregular output voltage ( $V_{mathbf {OUT}}$ ) ripples and acoustic noise due to random switching at near dead-zone CR. Fabricated in 28nm, the chip provides high $I_{mathbf {LOAD}}$ of 1.2A for $V_{mathbf {IN}}$ up to 3.6V using only 1.8V low-voltage transistors. Moreover, the converter achieves an excellent peak efficiency of 95.2%.
本文介绍了一种电源电压($V_{mathbf {IN}}}$)动态分裂,以克服多电平(ML)降压转换器的实际限制。使用飞行电容器($C_{mathbf {F}}$)的ML降压变换器存在$C_{mathbf {F}}$电压($V_{mathbf {CF}}$)不平衡和近死区转换比随机切换(CR $= V_{mathbf {OUT}}$ / $V_{mathbf {IN}}$)的问题。所提出的输入电容($C_{mathbf {IN}}$)动态重用的3电平降压变换器采用$V_{mathbf {IN}}$半分平衡(VHSB)实现无环快速$V_{mathbf {CF}}$平衡。此外,$V_{mathbf {In}}$四分之一分割过渡(VQST)用于防止在死区CR附近随机开关引起的不规则输出电压($V_{mathbf {OUT}}$)波纹和噪声。该芯片采用28nm制程,仅使用1.8V低压晶体管,在$V_{mathbf {In}}$高达3.6V时提供1.2A的高$I_{mathbf {LOAD}}$。此外,该变换器的峰值效率达到了95.2%。
{"title":"A Reconfigurable 3-Level Buck Converter With Supply Voltage Dynamic Split for Loop-Free Rapid VCF-Balancing and Dead-Zone Seamless Transition","authors":"Hyunjun Park;Minsu Kim;Woojoong Jung;Junho Song;Sung-Min Yoo;Jun-Hyeok Yang;Michael Choi;Jongshin Shin;Hyung-Min Lee","doi":"10.1109/TCSII.2025.3613137","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3613137","url":null,"abstract":"This brief presents a supply voltage (<inline-formula> <tex-math>$V_{mathbf {IN}}$ </tex-math></inline-formula>) dynamic split to overcome practical limitations of multi-level (ML) buck converters. The ML buck converters using flying capacitors (<inline-formula> <tex-math>$C_{mathbf {F}}$ </tex-math></inline-formula>) suffer from both <inline-formula> <tex-math>$C_{mathbf {F}}$ </tex-math></inline-formula> voltage (<inline-formula> <tex-math>$V_{mathbf {CF}}$ </tex-math></inline-formula>) imbalance and random switching at near dead-zone conversion ratio (CR <inline-formula> <tex-math>$= V_{mathbf {OUT}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$V_{mathbf {IN}}$ </tex-math></inline-formula>). The proposed 3-level buck converter with input capacitor (<inline-formula> <tex-math>$C_{mathbf {IN}}$ </tex-math></inline-formula>) dynamic reuse adopts <inline-formula> <tex-math>$V_{mathbf {IN}}$ </tex-math></inline-formula> half-split balancing (VHSB) for loop-free rapid <inline-formula> <tex-math>$V_{mathbf {CF}}$ </tex-math></inline-formula> balancing. In addition, <inline-formula> <tex-math>$V_{mathbf {IN}}$ </tex-math></inline-formula> quarter-split transition (VQST) is applied to prevent irregular output voltage (<inline-formula> <tex-math>$V_{mathbf {OUT}}$ </tex-math></inline-formula>) ripples and acoustic noise due to random switching at near dead-zone CR. Fabricated in 28nm, the chip provides high <inline-formula> <tex-math>$I_{mathbf {LOAD}}$ </tex-math></inline-formula> of 1.2A for <inline-formula> <tex-math>$V_{mathbf {IN}}$ </tex-math></inline-formula> up to 3.6V using only 1.8V low-voltage transistors. Moreover, the converter achieves an excellent peak efficiency of 95.2%.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1805-1809"},"PeriodicalIF":4.9,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simplified Hybrid Adaptive Kalman Filter With Fading-Triggered Resonance Mechanism for PMSM Speed-Sensorless Control 基于衰落触发共振机制的简化混合自适应卡尔曼滤波在永磁同步电机无速度传感器控制中的应用
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-22 DOI: 10.1109/TCSII.2025.3612703
Wenjie Li;Yongting Deng;Jia Fu;Haiyang Cao;Yuxin Kang;Chuanlong Zhai;Xiufeng Liu;Gaolin Wang
To enhance the position estimation accuracy of permanent magnet synchronous motor (PMSM) speed-sensorless control, a simplified hybrid adaptive kalman filter (SHAKF) with fading-triggered resonance (FTR) is proposed in this brief. By simplifying the iterative calculation of forgetting factor and noise covariance matrix, the computational burden is effectively reduced. Through the FTR mechanism, the steady-state error compensation without compromising stability is achieved. The stability and convergence are rigorously analyzed. Finally, the experimental results validate the superiority of the proposed sensorless control strategy in steady-state accuracy, dynamic speed response, and computational efficiency.
为了提高永磁同步电机(PMSM)无速度传感器控制的位置估计精度,提出了一种带有衰落触发共振(FTR)的简化混合自适应卡尔曼滤波器(SHAKF)。通过简化遗忘因子和噪声协方差矩阵的迭代计算,有效地减少了计算量。通过FTR机构,在不影响稳定性的情况下实现了稳态误差补偿。严格分析了该方法的稳定性和收敛性。最后,实验结果验证了所提无传感器控制策略在稳态精度、动态速度响应和计算效率方面的优越性。
{"title":"Simplified Hybrid Adaptive Kalman Filter With Fading-Triggered Resonance Mechanism for PMSM Speed-Sensorless Control","authors":"Wenjie Li;Yongting Deng;Jia Fu;Haiyang Cao;Yuxin Kang;Chuanlong Zhai;Xiufeng Liu;Gaolin Wang","doi":"10.1109/TCSII.2025.3612703","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3612703","url":null,"abstract":"To enhance the position estimation accuracy of permanent magnet synchronous motor (PMSM) speed-sensorless control, a simplified hybrid adaptive kalman filter (SHAKF) with fading-triggered resonance (FTR) is proposed in this brief. By simplifying the iterative calculation of forgetting factor and noise covariance matrix, the computational burden is effectively reduced. Through the FTR mechanism, the steady-state error compensation without compromising stability is achieved. The stability and convergence are rigorously analyzed. Finally, the experimental results validate the superiority of the proposed sensorless control strategy in steady-state accuracy, dynamic speed response, and computational efficiency.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1740-1744"},"PeriodicalIF":4.9,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Energy-Efficient 3D Semantic Segmentation Processor With Offset-Wise Weight Quantization 基于偏移权量化的高能效三维语义分割处理器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-19 DOI: 10.1109/TCSII.2025.3611960
Beomseok Kim;Sunwoo Lee;Byeungseok Yoo;Dongsuk Jeon
Voxel-based point cloud neural networks have gained significant attention for 3D semantic segmentation due to their effectiveness in processing point clouds. However, the high computational overhead of processing large-scale point clouds and the inherent irregularity of these point clouds hinder the fast and energy-efficient acceleration of segmentation. This brief presents a 3D semantic segmentation accelerator with an offset-wise weight quantization technique that drastically reduces computational complexity. The proposed design introduces a unified voxel search unit that efficiently processes various types of operations needed to capture spatial relationships among irregularly stored voxels. In addition, a dual-mode computing engine combined with a novel workload allocation technique enables highly parallel processing and maximizes processing core utilization. Fabricated in a 28-nm CMOS technology, the proposed processor achieves 10.24 TOPS/W energy efficiency, outperforming prior art.
基于体素的点云神经网络由于其对点云的有效处理,在三维语义分割中得到了广泛的关注。然而,处理大规模点云的高计算开销和这些点云固有的不规则性阻碍了快速高效的分割加速。本文介绍了一种3D语义分割加速器,该加速器采用偏移加权量化技术,大大降低了计算复杂度。提出的设计引入了一个统一的体素搜索单元,该单元有效地处理捕获不规则存储体素之间空间关系所需的各种类型的操作。此外,双模式计算引擎结合了一种新颖的工作负载分配技术,可以实现高度并行处理并最大化处理核心利用率。该处理器采用28纳米CMOS技术制造,能量效率达到10.24 TOPS/W,优于现有技术。
{"title":"An Energy-Efficient 3D Semantic Segmentation Processor With Offset-Wise Weight Quantization","authors":"Beomseok Kim;Sunwoo Lee;Byeungseok Yoo;Dongsuk Jeon","doi":"10.1109/TCSII.2025.3611960","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3611960","url":null,"abstract":"Voxel-based point cloud neural networks have gained significant attention for 3D semantic segmentation due to their effectiveness in processing point clouds. However, the high computational overhead of processing large-scale point clouds and the inherent irregularity of these point clouds hinder the fast and energy-efficient acceleration of segmentation. This brief presents a 3D semantic segmentation accelerator with an offset-wise weight quantization technique that drastically reduces computational complexity. The proposed design introduces a unified voxel search unit that efficiently processes various types of operations needed to capture spatial relationships among irregularly stored voxels. In addition, a dual-mode computing engine combined with a novel workload allocation technique enables highly parallel processing and maximizes processing core utilization. Fabricated in a 28-nm CMOS technology, the proposed processor achieves 10.24 TOPS/W energy efficiency, outperforming prior art.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1760-1764"},"PeriodicalIF":4.9,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11173709","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Energy Efficient RFET-Based Polymorphic Logic Gates 基于rfet的高能效多态逻辑门设计
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-17 DOI: 10.1109/TCSII.2025.3611107
Fanny Spagnolo;Pasquale Corsonello;Stefania Perri
Polymorphic gates are logic hardware components designed to have reconfigurable functionalities and perform context-dependent operations. These gates were often implemented using emerging technologies with intrinsic properties that can be exploited to alter the logical operation, such as Reconfigurable Field-Effect Transistors (RFETs). However, the majority of the proposed topologies still remain rooted in conventional design paradigms, thus only partially exploiting the benefits of such advanced devices. In this Brief, we present a universal polymorphic topology purposely conceived for RFETs that can be configured to implement any combination of 2-input logic functions and their inversions, by simply acting on external configuration signals. When realized using a 14nm process technology, the proposed gate, configured as NAND-XNOR-XOR-AND, shows a delay of 19ps and dissipates ~1.8fJ, which is nearly the same as that required by a simple XNOR gate realized using RFETs. At the parity of logic functionality, the proposed scheme leads to a reduction in delay and energy dissipation of up to 64% and 57.9%, respectively, compared to conventional approaches.
多态门是逻辑硬件组件,设计具有可重构功能并执行上下文相关操作。这些门通常使用具有固有特性的新兴技术来实现,可以利用这些特性来改变逻辑操作,例如可重构场效应晶体管(rfet)。然而,大多数提出的拓扑结构仍然植根于传统的设计范式,因此只能部分地利用这些先进设备的优势。在本简报中,我们提出了一个通用的多态拓扑,专门为rfet设计,可以通过简单地作用于外部配置信号来配置实现任何2输入逻辑函数及其反转的组合。当采用14nm工艺技术实现时,所提出的门被配置为nand - xor - xor - and,显示出19ps的延迟和1.8fJ的损耗,这与使用rfet实现的简单XNOR门几乎相同。在逻辑功能奇偶性方面,与传统方法相比,该方案的延迟和能量消耗分别降低了64%和57.9%。
{"title":"Design of Energy Efficient RFET-Based Polymorphic Logic Gates","authors":"Fanny Spagnolo;Pasquale Corsonello;Stefania Perri","doi":"10.1109/TCSII.2025.3611107","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3611107","url":null,"abstract":"Polymorphic gates are logic hardware components designed to have reconfigurable functionalities and perform context-dependent operations. These gates were often implemented using emerging technologies with intrinsic properties that can be exploited to alter the logical operation, such as Reconfigurable Field-Effect Transistors (RFETs). However, the majority of the proposed topologies still remain rooted in conventional design paradigms, thus only partially exploiting the benefits of such advanced devices. In this Brief, we present a universal polymorphic topology purposely conceived for RFETs that can be configured to implement any combination of 2-input logic functions and their inversions, by simply acting on external configuration signals. When realized using a 14nm process technology, the proposed gate, configured as NAND-XNOR-XOR-AND, shows a delay of 19ps and dissipates ~1.8fJ, which is nearly the same as that required by a simple XNOR gate realized using RFETs. At the parity of logic functionality, the proposed scheme leads to a reduction in delay and energy dissipation of up to 64% and 57.9%, respectively, compared to conventional approaches.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1755-1759"},"PeriodicalIF":4.9,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11168833","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid Power Filter for Differential-Mode and Common-Mode Noise Currents 差模和共模噪声电流的混合电源滤波器
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-17 DOI: 10.1109/TCSII.2025.3610891
Yeu-Torng Yau
This brief presents a compact, single-stage hybrid power filter for AC/DC or DC/DC converters that simultaneously suppresses DM and CM noise currents through a passive current cancellation method. By integrating both DM and CM filtering functions into a single filter topology, the proposed design reduces the number of magnetic windings and simplifies construction compared to conventional multi-stage filters. Composed entirely of passive components, it avoids the complexity that active circuits usually entail, offering a reliable and efficient solution for industrial applications.
本简介介绍了一种紧凑的单级混合电源滤波器,用于AC/DC或DC/DC转换器,通过无源电流抵消方法同时抑制DM和CM噪声电流。通过将DM和CM滤波功能集成到单个滤波器拓扑中,与传统的多级滤波器相比,所提出的设计减少了磁性绕组的数量并简化了结构。它完全由无源元件组成,避免了有源电路通常带来的复杂性,为工业应用提供了可靠和高效的解决方案。
{"title":"Hybrid Power Filter for Differential-Mode and Common-Mode Noise Currents","authors":"Yeu-Torng Yau","doi":"10.1109/TCSII.2025.3610891","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3610891","url":null,"abstract":"This brief presents a compact, single-stage hybrid power filter for AC/DC or DC/DC converters that simultaneously suppresses DM and CM noise currents through a passive current cancellation method. By integrating both DM and CM filtering functions into a single filter topology, the proposed design reduces the number of magnetic windings and simplifies construction compared to conventional multi-stage filters. Composed entirely of passive components, it avoids the complexity that active circuits usually entail, offering a reliable and efficient solution for industrial applications.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1800-1804"},"PeriodicalIF":4.9,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Data-Driven State-of-Charge Estimation for Lithium-Ion Batteries Using Variational Inference 基于变分推理的锂离子电池电量状态估计
IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-10 DOI: 10.1109/TCSII.2025.3608185
Wei Yu;Yunfei Zheng;Shiyuan Wang
The nonlinear and time-varying characteristics of internal electronic circuits in battery systems pose challenges to the practical application of traditional state-of-charge (SOC) estimation methods. To address these challenges, we first propose a novel variational inference neural network (VINN), which combines deep neural networks with variational inference to enable accurate SOC estimation solely based on measured current, voltage, and temperature. Specifically, the proposed VINN employs an encoder to infer a latent SOC distribution from measurement inputs, and a decoder is used to reconstruct the inputs for computing the evidence lower bound (ELBO), which guides the network optimization. Meanwhile, a physics-informed loss is introduced by using Coulomb counting to derive the prior of SOC, ensuring consistency with the battery’s circuit behavior. Finally, experiments on realistic Panasonic 18650PF dataset demonstrate that VINN achieves superior estimation accuracy and generalization performance under both supervised and unsupervised settings compared to state-of-the-art methods.
电池系统内部电路的非线性和时变特性给传统的荷电状态估计方法的实际应用带来了挑战。为了应对这些挑战,我们首先提出了一种新的变分推理神经网络(VINN),它将深度神经网络与变分推理相结合,能够仅根据测量的电流、电压和温度进行准确的SOC估计。具体来说,所提出的VINN使用编码器从测量输入推断潜在SOC分布,并使用解码器重建输入以计算证据下界(ELBO),从而指导网络优化。同时,通过使用库仑计数来推导SOC的先验,引入了物理通知损耗,确保了与电池电路行为的一致性。最后,在真实的Panasonic 18650PF数据集上的实验表明,与最先进的方法相比,VINN在有监督和无监督设置下都具有更好的估计精度和泛化性能。
{"title":"Data-Driven State-of-Charge Estimation for Lithium-Ion Batteries Using Variational Inference","authors":"Wei Yu;Yunfei Zheng;Shiyuan Wang","doi":"10.1109/TCSII.2025.3608185","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3608185","url":null,"abstract":"The nonlinear and time-varying characteristics of internal electronic circuits in battery systems pose challenges to the practical application of traditional state-of-charge (SOC) estimation methods. To address these challenges, we first propose a novel variational inference neural network (VINN), which combines deep neural networks with variational inference to enable accurate SOC estimation solely based on measured current, voltage, and temperature. Specifically, the proposed VINN employs an encoder to infer a latent SOC distribution from measurement inputs, and a decoder is used to reconstruct the inputs for computing the evidence lower bound (ELBO), which guides the network optimization. Meanwhile, a physics-informed loss is introduced by using Coulomb counting to derive the prior of SOC, ensuring consistency with the battery’s circuit behavior. Finally, experiments on realistic Panasonic 18650PF dataset demonstrate that VINN achieves superior estimation accuracy and generalization performance under both supervised and unsupervised settings compared to state-of-the-art methods.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 11","pages":"1810-1814"},"PeriodicalIF":4.9,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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IEEE Transactions on Circuits and Systems II: Express Briefs
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