Pub Date : 2011-03-14DOI: 10.1109/ULIS.2011.5757999
G. Lucovsky, D. Zeller, K. Wu, J. Kim
The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay O-vacancy states in SiO2 and TM oxides are correlated with differences in wave function symmetries of conducition band edge electronic states.
{"title":"Electron injection from n-type Si substrates into (i) Transition metal high-k dielectrics and (ii) SiO2 and Si oxynitride alloys: Conduction band edge states and negative ion state electron trap differences","authors":"G. Lucovsky, D. Zeller, K. Wu, J. Kim","doi":"10.1109/ULIS.2011.5757999","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757999","url":null,"abstract":"The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay O-vacancy states in SiO2 and TM oxides are correlated with differences in wave function symmetries of conducition band edge electronic states.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134025170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-03-14DOI: 10.1109/ULIS.2011.5757950
L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling
We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.
{"title":"On the effective mass of holes in inversion layers","authors":"L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling","doi":"10.1109/ULIS.2011.5757950","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757950","url":null,"abstract":"We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133089631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-03-14DOI: 10.1109/ULIS.2011.5757973
D. Garetto, Y. M. Randriamihaja, A. Zaka, D. Rideau, A. Schmid, Herve Jaouem, Y. Leblebici
A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements.
{"title":"AC analysis of defect cross sections using non-radiative MPA quantum model","authors":"D. Garetto, Y. M. Randriamihaja, A. Zaka, D. Rideau, A. Schmid, Herve Jaouem, Y. Leblebici","doi":"10.1109/ULIS.2011.5757973","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757973","url":null,"abstract":"A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":" 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120829951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-03-14DOI: 10.1109/ULIS.2011.5758014
M. Schwarz, T. Holtij, A. Kloes, B. Iñíguez
A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.
{"title":"2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model","authors":"M. Schwarz, T. Holtij, A. Kloes, B. Iñíguez","doi":"10.1109/ULIS.2011.5758014","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5758014","url":null,"abstract":"A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132139734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-03-14DOI: 10.1109/ULIS.2011.5757991
A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge
Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.
{"title":"Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude","authors":"A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge","doi":"10.1109/ULIS.2011.5757991","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757991","url":null,"abstract":"Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129182622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ulis.2011.5757976
L. Ansari, B. Feldman, G. Fagas, J. Colinge, J. Greer
We have simulated silicon nanowire junctionless transistors with a 3 nm gate length within a Density Functional Theory (DFT) framework. We explored the response of transistors to source-drain bias, VDS, and gate voltage, Vg. Also, the effect of bulk and surface adatom in the wire cross section was evaluated.
{"title":"Atomic scale simulation of a junctionless silicon nanowire transistor","authors":"L. Ansari, B. Feldman, G. Fagas, J. Colinge, J. Greer","doi":"10.1109/ulis.2011.5757976","DOIUrl":"https://doi.org/10.1109/ulis.2011.5757976","url":null,"abstract":"We have simulated silicon nanowire junctionless transistors with a 3 nm gate length within a Density Functional Theory (DFT) framework. We explored the response of transistors to source-drain bias, VDS, and gate voltage, Vg. Also, the effect of bulk and surface adatom in the wire cross section was evaluated.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129672221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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