Pub Date : 2024-06-23DOI: 10.35848/1347-4065/ad51bd
Bingzhuo Wang, Bo Jing, Chunfeng Yu and Xiaoxuan Jiao
Air gap discharge is one of the most basic scientific problems in the field of high-voltage engineering. The homogeneous electric field 1.5 mm air gap negative streamer at overvoltage and atmospheric pressure is observed by a high-speed 4-channel framing camera. The ultra-high temporal resolution images of a single negative stream are captured (the exposure time is 5 ns, and the inter-frame delay is no more than 0.1 ns). It is observed that the negative streamer formed in the middle of the air gap and grew bidirectionally towards both electrodes. At the same time, the electrical measurement is also carried out.
{"title":"Ultra-high temporal resolution images of a homogeneous electric field short air gap negative streamer at overvoltage and atmospheric pressure","authors":"Bingzhuo Wang, Bo Jing, Chunfeng Yu and Xiaoxuan Jiao","doi":"10.35848/1347-4065/ad51bd","DOIUrl":"https://doi.org/10.35848/1347-4065/ad51bd","url":null,"abstract":"Air gap discharge is one of the most basic scientific problems in the field of high-voltage engineering. The homogeneous electric field 1.5 mm air gap negative streamer at overvoltage and atmospheric pressure is observed by a high-speed 4-channel framing camera. The ultra-high temporal resolution images of a single negative stream are captured (the exposure time is 5 ns, and the inter-frame delay is no more than 0.1 ns). It is observed that the negative streamer formed in the middle of the air gap and grew bidirectionally towards both electrodes. At the same time, the electrical measurement is also carried out.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"20 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-23DOI: 10.35848/1347-4065/ad52db
An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi and Kuniyuki Kakushima
SiC MOS devices with SiO2 gate dielectrics deposited by an atomic layer deposition (ALD) process with remote H2O plasma were investigated. H2O plasma was found to have a strong oxidizing effect compared to that of remote O2 plasma. Hydroxyl groups found in the SiO2 films with H2O plasma were removed by post-deposition annealing (PDA), and no difference in the IR absorption spectra was found between H2O and O2 plasma samples. A low leakage current and a high breakdown field of 10.5 MV cm−1 were obtained, comparable to the SiO2 films formed by O2 plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than an O2-plasma-formed SiO2 film. Moreover, MOSFETs revealed a high peak mobility of 26 cm2V−1s−1. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO2/SiC.
{"title":"Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma","authors":"An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi and Kuniyuki Kakushima","doi":"10.35848/1347-4065/ad52db","DOIUrl":"https://doi.org/10.35848/1347-4065/ad52db","url":null,"abstract":"SiC MOS devices with SiO2 gate dielectrics deposited by an atomic layer deposition (ALD) process with remote H2O plasma were investigated. H2O plasma was found to have a strong oxidizing effect compared to that of remote O2 plasma. Hydroxyl groups found in the SiO2 films with H2O plasma were removed by post-deposition annealing (PDA), and no difference in the IR absorption spectra was found between H2O and O2 plasma samples. A low leakage current and a high breakdown field of 10.5 MV cm−1 were obtained, comparable to the SiO2 films formed by O2 plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than an O2-plasma-formed SiO2 film. Moreover, MOSFETs revealed a high peak mobility of 26 cm2V−1s−1. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO2/SiC.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 2 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a deposition method of a polymer thin film on the silver surface of a surface plasmon sensor for preventing sensitivity degradation in refractive index measurements due to the poor chemical stability of the silver. The deposition of a poly(methyl methacrylate) thin film with a ∼15 nm thickness was conducted by employing a spin coating technique along with a hydrophilicity enhancement of the silver surface using an atmospheric low-temperature plasma treatment. We experimentally verified the thickness by measuring the propagation constant of the surface plasmon. The measured propagation constants that showed the standard deviation at the order of 10−4 indicated microscopical uniformity. Furthermore, the reproducibility of thickness was experimentally verified.
{"title":"Deposition of a polymer thin film on a silver surface for surface plasmon sensing","authors":"Akinari Abe, Ipsita Chakraborty, Daiki Matsubayashi, Tsuyoshi Noguchi, Akitoshi Okino and Hiroshi Kano","doi":"10.35848/1347-4065/ad523f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad523f","url":null,"abstract":"We report a deposition method of a polymer thin film on the silver surface of a surface plasmon sensor for preventing sensitivity degradation in refractive index measurements due to the poor chemical stability of the silver. The deposition of a poly(methyl methacrylate) thin film with a ∼15 nm thickness was conducted by employing a spin coating technique along with a hydrophilicity enhancement of the silver surface using an atmospheric low-temperature plasma treatment. We experimentally verified the thickness by measuring the propagation constant of the surface plasmon. The measured propagation constants that showed the standard deviation at the order of 10−4 indicated microscopical uniformity. Furthermore, the reproducibility of thickness was experimentally verified.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"132 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.35848/1347-4065/ad50e5
Yuzhuang Xie, Haisong Jiang and Kiichi Hamamoto
The power splitter is one of the fundamental elements in a photonic IC. Among various power splitter structures, nano-pixel-based ones have attracted attention in recent years because of their flexible design capability. As there is no rigid design rule in nano-pixel layout, typically, inverse design algorithms are employed to realize the target function. In inverse design, general criteria are needed during the design process, and one typical criterion is the excess loss, however, there are no specific criteria for mode field evaluation. When designing a 1 × N power splitter, considering the power balance among the N output ports is crucial, therefore, we propose a correlation coefficient method to evaluate the output electric field profile. In this study, we adopted vector criteria including both an excess loss and correlation coefficient method during the inverse design process. As a result, the simulated results show all four 0th order modes and the output power to be 24.490%, 24.494%, 24.494%, and 24.490% with a low excess loss of 0.1 dB.
功率分配器是光子集成电路的基本元件之一。在各种功率分配器结构中，基于纳米像素的结构因其灵活的设计能力近年来备受关注。由于纳米像素布局没有严格的设计规则，因此通常采用逆向设计算法来实现目标功能。在逆向设计中，设计过程需要一般标准，其中一个典型的标准是过量损耗，但没有具体的模式场评估标准。在设计 1 × N 功率分配器时，考虑 N 个输出端口之间的功率平衡至关重要，因此我们提出了一种相关系数方法来评估输出电场轮廓。在本研究中，我们在逆向设计过程中采用了包括过量损耗和相关系数方法在内的矢量标准。结果，模拟结果显示所有四个 0 阶模式和输出功率分别为 24.490%、24.494%、24.494% 和 24.490%，过量损耗低至 0.1 dB。
{"title":"1 × 4 nano-pixel power splitter designed using an electric profile correlation coefficient monitor method","authors":"Yuzhuang Xie, Haisong Jiang and Kiichi Hamamoto","doi":"10.35848/1347-4065/ad50e5","DOIUrl":"https://doi.org/10.35848/1347-4065/ad50e5","url":null,"abstract":"The power splitter is one of the fundamental elements in a photonic IC. Among various power splitter structures, nano-pixel-based ones have attracted attention in recent years because of their flexible design capability. As there is no rigid design rule in nano-pixel layout, typically, inverse design algorithms are employed to realize the target function. In inverse design, general criteria are needed during the design process, and one typical criterion is the excess loss, however, there are no specific criteria for mode field evaluation. When designing a 1 × N power splitter, considering the power balance among the N output ports is crucial, therefore, we propose a correlation coefficient method to evaluate the output electric field profile. In this study, we adopted vector criteria including both an excess loss and correlation coefficient method during the inverse design process. As a result, the simulated results show all four 0th order modes and the output power to be 24.490%, 24.494%, 24.494%, and 24.490% with a low excess loss of 0.1 dB.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"2012 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.35848/1347-4065/ad52dc
Mina Maruyama, Yanlin Gao and Susumu Okada
The bowl-shaped hydrocarbon molecule, monofluorosumanene (C21H11F), can act as a molecular switch to control the carrier density of bilayer graphene by flipping its conformation. Our calculations indicate that monofluorosumanene, in which F atom is located outside the curved C–C network (exo-F molecular conformation), induces electron and hole co-doping of 1.5 × 1013 cm−2 in monofluorosumanene-intercalated bilayer graphene because of a large dipole moment normal to the molecular plane of the monofluorosumanene. The intercalated monofluorosumanene does not affect the electronic structure of bilayer graphene when the F atom is located inside the curved C–C network (endo-F conformation) owing to a small out-of-plane dipole moment. The application of an external electric field across the graphene layers promotes bowl inversion between endo-F and exo-F molecular conformations because of the low activation barrier (approximately 800 meV) between these two conformations and the dipole moment normal to the molecular plane of the exo-F conformation.
碗状碳氢化合物分子单氟苏曼烯（C21H11F）可以作为分子开关，通过翻转其构象来控制双层石墨烯的载流子密度。我们的计算表明，F 原子位于弯曲的 C-C 网络（外 F 分子构象）之外的单氟苏曼烯，由于单氟苏曼烯分子平面法向的偶极矩较大，可在单氟苏曼烯夹层双层石墨烯中诱导出 1.5 × 1013 cm-2 的电子和空穴共掺杂。当 F 原子位于弯曲的 C-C 网络内部（内 F 构象）时，由于平面外偶极矩较小，插层单氟苏曼烷不会影响双层石墨烯的电子结构。在石墨烯层上施加外部电场会促进内-F 和外-F 分子构象之间的碗状反转，因为这两种构象之间的活化势垒较低（约 800 meV），而且外-F 构象的偶极矩与分子平面的法线垂直。
{"title":"Metal–semiconductor transition in bilayer graphene by bowl inversion of monofluorosumanene","authors":"Mina Maruyama, Yanlin Gao and Susumu Okada","doi":"10.35848/1347-4065/ad52dc","DOIUrl":"https://doi.org/10.35848/1347-4065/ad52dc","url":null,"abstract":"The bowl-shaped hydrocarbon molecule, monofluorosumanene (C21H11F), can act as a molecular switch to control the carrier density of bilayer graphene by flipping its conformation. Our calculations indicate that monofluorosumanene, in which F atom is located outside the curved C–C network (exo-F molecular conformation), induces electron and hole co-doping of 1.5 × 1013 cm−2 in monofluorosumanene-intercalated bilayer graphene because of a large dipole moment normal to the molecular plane of the monofluorosumanene. The intercalated monofluorosumanene does not affect the electronic structure of bilayer graphene when the F atom is located inside the curved C–C network (endo-F conformation) owing to a small out-of-plane dipole moment. The application of an external electric field across the graphene layers promotes bowl inversion between endo-F and exo-F molecular conformations because of the low activation barrier (approximately 800 meV) between these two conformations and the dipole moment normal to the molecular plane of the exo-F conformation.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reveals that ultrasonic jet atomization using a diaphragm enables the enclosure of microplastics in water into atomized mist, emitting them into the air. In particular, a strong correlation is found between the sizes of the atomized mist and the acrylic particles enclosed in the mist: Acrylic particles with an average diameter of 1.5 μm or smaller are selectively enclosed within the atomized mist with an average diameter of 2.2 μm. This result indicates that jet atomization has the ability to select particles with diameters of 1.5 μm or less from numerous micro-particles with different diameters and separate them into individual particles without aggregation. The results of this study can be applicable to the process of analyzing microplastics dispersed in rivers, lakes, and oceans for separating particles of a targeted diameter from numerous particles of different diameters without aggregation.
{"title":"A selective separation method for microplastics using ultrasonic jet atomization","authors":"Hiroshi Matsuura, Hiromitsu Furukawa, Atsushi Kondo, Hiroki Kurita, Takuya Toyoshi, Yoshinori Watanabe, Tamio Tanikawa and Hideki Hashimoto","doi":"10.35848/1347-4065/ad5128","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5128","url":null,"abstract":"This paper reveals that ultrasonic jet atomization using a diaphragm enables the enclosure of microplastics in water into atomized mist, emitting them into the air. In particular, a strong correlation is found between the sizes of the atomized mist and the acrylic particles enclosed in the mist: Acrylic particles with an average diameter of 1.5 μm or smaller are selectively enclosed within the atomized mist with an average diameter of 2.2 μm. This result indicates that jet atomization has the ability to select particles with diameters of 1.5 μm or less from numerous micro-particles with different diameters and separate them into individual particles without aggregation. The results of this study can be applicable to the process of analyzing microplastics dispersed in rivers, lakes, and oceans for separating particles of a targeted diameter from numerous particles of different diameters without aggregation.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-16DOI: 10.35848/1347-4065/ad50b4
Takashi Nishimura and Masahiko Tomitori
A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.
{"title":"Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources","authors":"Takashi Nishimura and Masahiko Tomitori","doi":"10.35848/1347-4065/ad50b4","DOIUrl":"https://doi.org/10.35848/1347-4065/ad50b4","url":null,"abstract":"A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"148 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.35848/1347-4065/ad50b3
Noriyuki Tsukahara, Ryuichi Arafune and Jun Yoshinobu
A porous two-dimensional metal–organic network (2D-MON) on a substrate captures deposited metal atoms and metal clusters growing in the pores of the 2D-MON. We found that the growth mechanisms of Ag, In, and Pd clusters in the 2D-MON synthesized from 1,3,5-tris(4-bromophenyl)benzene molecules on Ag(111) are different from each other, and the difference derives from the interaction of an adatom with the 2D-MON. Ag and Pd clusters grow from the 2D-MON since the interaction of Ag and Pd adatoms with the 2D-MON is attractive. In clusters grow inside of the pores of the 2D-MON since the interaction between an In adatom and the 2D-MON is repulsive. The growth process of metal clusters is determined by the element-specific behavior of metal adatoms in the pores, taking into account interactions with the 2D-MON.
{"title":"Element-specific cluster growth on the two-dimensional metal–organic network","authors":"Noriyuki Tsukahara, Ryuichi Arafune and Jun Yoshinobu","doi":"10.35848/1347-4065/ad50b3","DOIUrl":"https://doi.org/10.35848/1347-4065/ad50b3","url":null,"abstract":"A porous two-dimensional metal–organic network (2D-MON) on a substrate captures deposited metal atoms and metal clusters growing in the pores of the 2D-MON. We found that the growth mechanisms of Ag, In, and Pd clusters in the 2D-MON synthesized from 1,3,5-tris(4-bromophenyl)benzene molecules on Ag(111) are different from each other, and the difference derives from the interaction of an adatom with the 2D-MON. Ag and Pd clusters grow from the 2D-MON since the interaction of Ag and Pd adatoms with the 2D-MON is attractive. In clusters grow inside of the pores of the 2D-MON since the interaction between an In adatom and the 2D-MON is repulsive. The growth process of metal clusters is determined by the element-specific behavior of metal adatoms in the pores, taking into account interactions with the 2D-MON.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"230 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.35848/1347-4065/ad455c
Gento Toyoda, Takashi Fuse and Satoshi Yamauchi
Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line.
{"title":"Selective Cu growth on fine structures using a Cu-iodide precursor","authors":"Gento Toyoda, Takashi Fuse and Satoshi Yamauchi","doi":"10.35848/1347-4065/ad455c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad455c","url":null,"abstract":"Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"36 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.35848/1347-4065/ad45d3
Sadaharu Jo, Seiya Suzuki, Masamichi Yoshimura
The surface morphology of naphtacene single crystals grown by the physical vapor transport technique was investigated by atomic force microscopy and white-beam X-ray topography. Locally, two types of line pattern were observed on the basal (001) plane along the [110] and [010] directions, and analyzed from crystallographic viewpoints. Such line patterns are considered in relation to crystallographic periodicities, dislocation lines, and slip-plane phenomena.
原子力显微镜和白光 X 射线形貌图研究了利用物理气相传输技术生长的萘单晶的表面形貌。在基底（001）面上沿[110]和[010]方向观察到两种局部线型，并从晶体学角度对其进行了分析。这些线型与晶体学周期性、位错线和滑移面现象有关。
{"title":"Surface morphology of naphtacene single crystals grown by the physical vapor transport technique","authors":"Sadaharu Jo, Seiya Suzuki, Masamichi Yoshimura","doi":"10.35848/1347-4065/ad45d3","DOIUrl":"https://doi.org/10.35848/1347-4065/ad45d3","url":null,"abstract":"The surface morphology of naphtacene single crystals grown by the physical vapor transport technique was investigated by atomic force microscopy and white-beam X-ray topography. Locally, two types of line pattern were observed on the basal (001) plane along the [110] and [010] directions, and analyzed from crystallographic viewpoints. Such line patterns are considered in relation to crystallographic periodicities, dislocation lines, and slip-plane phenomena.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"11 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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