Pub Date : 2004-06-07DOI: 10.1109/IITC.2004.1345745
C. Jeng, W. K. Wan, H.H. Lin, M. Liang, K. Tang, I. Kao, H. Lo, K. Chi, T.C. Huang, C. Yao, C. Lin, M. D. Lei, C. Hsia, M. Liang
The process development, characterization and performance evaluation of low-k dielectrics to form multi-level Cu interconnects for the 65 nm CMOS technology node are presented. Significant modifications and improvements over 90nm node have been implemented to overcome those challenges as design rules shrink, which include top via corner rounding control for the robust EM/SM reliability, and inline e-beam inspection for via/trench processes optimization. An in-house developed ECP additive "Trameca" for good Cu gap filling and a controllable hump height for good CMP performance are adopted to achieve tight Rs distributions. The facts that 100% yields of 2.1 millions via chain structure and open/short free on 5m long comb/meander structures along with SM/EM meeting the spec all demonstrated the technology to be a highly manufacturable BEOL process for 65 nm technology node.
{"title":"BEOL process integration of 65nm Cu/low k interconnects","authors":"C. Jeng, W. K. Wan, H.H. Lin, M. Liang, K. Tang, I. Kao, H. Lo, K. Chi, T.C. Huang, C. Yao, C. Lin, M. D. Lei, C. Hsia, M. Liang","doi":"10.1109/IITC.2004.1345745","DOIUrl":"https://doi.org/10.1109/IITC.2004.1345745","url":null,"abstract":"The process development, characterization and performance evaluation of low-k dielectrics to form multi-level Cu interconnects for the 65 nm CMOS technology node are presented. Significant modifications and improvements over 90nm node have been implemented to overcome those challenges as design rules shrink, which include top via corner rounding control for the robust EM/SM reliability, and inline e-beam inspection for via/trench processes optimization. An in-house developed ECP additive \"Trameca\" for good Cu gap filling and a controllable hump height for good CMP performance are adopted to achieve tight Rs distributions. The facts that 100% yields of 2.1 millions via chain structure and open/short free on 5m long comb/meander structures along with SM/EM meeting the spec all demonstrated the technology to be a highly manufacturable BEOL process for 65 nm technology node.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115336248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-07DOI: 10.1109/IITC.2004.1345678
H. Okamura, S. Ogawa
In order to minimize plasma-damage on porous low-k films, a pre-clean treatment, NH3 thermal reduction, to remove CuOx thin layer from a via bottom before barrier metal deposition was investigated. A reduction rate of 3 nm/min for CuOx layer was obtained at 360 C degrees, and via resistance was reduced to 75% without any damage into porous low-k films such as increase of dielectric constant (k) and decrease in low-k film thickness, while conventional Ar or He/H2 plasma pre-clean treatments in severe damages into low-k-films.
{"title":"Low damage via formation with low resistance by NH3 thermal reduction for Cu/ultra low-k interconnects","authors":"H. Okamura, S. Ogawa","doi":"10.1109/IITC.2004.1345678","DOIUrl":"https://doi.org/10.1109/IITC.2004.1345678","url":null,"abstract":"In order to minimize plasma-damage on porous low-k films, a pre-clean treatment, NH3 thermal reduction, to remove CuOx thin layer from a via bottom before barrier metal deposition was investigated. A reduction rate of 3 nm/min for CuOx layer was obtained at 360 C degrees, and via resistance was reduced to 75% without any damage into porous low-k films such as increase of dielectric constant (k) and decrease in low-k film thickness, while conventional Ar or He/H2 plasma pre-clean treatments in severe damages into low-k-films.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122409481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-07DOI: 10.1109/IITC.2004.1345734
M. Shimada, J. Shimanuki, N. Ohtsuka, A. Furuya, Y. Inoue, S. Ogawa
3-dimensional structures of pores in porous low-k films have been quantitatively observed by transmission electron microscopy (TEM) tomographic technique for the first time. The 3-dimensional (3-D) reconstruction images clarified that the shape of pores are distorted and connectivity of the pores, such as open or close pores, depended on pore formation technique in the films, e.g. template or nano-clustering technique. Quantitative information of pores structure from 3-D reconstruction images were obtained using a 3-D structure analysis algorithm. The size of pores and connectivity influenced on metal penetration into the pores during atomic layer deposition (ALD) and chemical penetration which resulted in void formation in porous low-k films.
{"title":"3-dimensional structures of pores in low-k films observed by quantitative TEM tomograph and their impacts on penetration phenomena","authors":"M. Shimada, J. Shimanuki, N. Ohtsuka, A. Furuya, Y. Inoue, S. Ogawa","doi":"10.1109/IITC.2004.1345734","DOIUrl":"https://doi.org/10.1109/IITC.2004.1345734","url":null,"abstract":"3-dimensional structures of pores in porous low-k films have been quantitatively observed by transmission electron microscopy (TEM) tomographic technique for the first time. The 3-dimensional (3-D) reconstruction images clarified that the shape of pores are distorted and connectivity of the pores, such as open or close pores, depended on pore formation technique in the films, e.g. template or nano-clustering technique. Quantitative information of pores structure from 3-D reconstruction images were obtained using a 3-D structure analysis algorithm. The size of pores and connectivity influenced on metal penetration into the pores during atomic layer deposition (ALD) and chemical penetration which resulted in void formation in porous low-k films.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"116 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129104137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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