Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441104
A. Mishra, S. Dubey, J. A. Ansari, B. R. Vishvakarma
In the present paper W-slot loaded single and two layer dielectric microstrip patchantenna has been analysed using equivalent circuit concept. The antenna shows dual resonance. The resonance frequency of single layer patch is found to be 2.91 GHz and 3.88 GHz which increases for two layer dielectric antenna 4.17GHz and 5.78GHz. The frequency ratio is found to be 1.33 for single layer patch antenna and 1.38 for two layer dielectric patch antenna. In general the frequency ratio is found to depend on slot length, slot width and slot angle. The band width of single layer patch antenna is found to be 1.71% and 1.68 % for lower and upper resonance frequency while it increases for two layer dielectric 5.28 % and 2.77 %. The theoretical results are compared with the simulated results obtained from IE3D and they are in close agreement.
{"title":"W-slot loaded patch antenna for dual-band operation","authors":"A. Mishra, S. Dubey, J. A. Ansari, B. R. Vishvakarma","doi":"10.1109/ELECTRO.2009.5441104","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441104","url":null,"abstract":"In the present paper W-slot loaded single and two layer dielectric microstrip patchantenna has been analysed using equivalent circuit concept. The antenna shows dual resonance. The resonance frequency of single layer patch is found to be 2.91 GHz and 3.88 GHz which increases for two layer dielectric antenna 4.17GHz and 5.78GHz. The frequency ratio is found to be 1.33 for single layer patch antenna and 1.38 for two layer dielectric patch antenna. In general the frequency ratio is found to depend on slot length, slot width and slot angle. The band width of single layer patch antenna is found to be 1.71% and 1.68 % for lower and upper resonance frequency while it increases for two layer dielectric 5.28 % and 2.77 %. The theoretical results are compared with the simulated results obtained from IE3D and they are in close agreement.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116235029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441180
Mohamad Kazem Anvarifard, M. G. Armaki, S. E. Hosseini
In this paper a new transistor of dual-gate (DG) silicon-on- insulator (SOI) MOSFET is presented. The objects of this paper are to use a voltage difference between the two gates to screen the drain voltage and therefore reduce short channel effects (SCEs). In this transistor the surface potential exhibits a step function, which causes the screening of the drain potential. This results in suppressed SCEs such as the hot-carrier effect and decreasing off-current with respect to shrinking of channel length. The obtained results of our transistor are compared to single gate (SG) SOI MOSFET that shows the DG SOI MOSFET performance is superior. The transistor has been simulated by SILVACO software.
本文提出了一种新型的双栅绝缘子上硅MOSFET晶体管。本文的目标是利用两个栅极之间的电压差来屏蔽漏极电压，从而减少短通道效应(SCEs)。在这种晶体管中，表面电势呈阶跃函数，导致漏极电势的屏蔽。这导致抑制ses，如热载子效应和减少的关断电流相对于通道长度的缩小。将所得结果与单栅SOI MOSFET进行了比较，结果表明DG SOI MOSFET的性能更优越。利用SILVACO软件对该晶体管进行了仿真。
{"title":"A new transistor of dual-gate SOI and evidence for diminished short channel effects","authors":"Mohamad Kazem Anvarifard, M. G. Armaki, S. E. Hosseini","doi":"10.1109/ELECTRO.2009.5441180","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441180","url":null,"abstract":"In this paper a new transistor of dual-gate (DG) silicon-on- insulator (SOI) MOSFET is presented. The objects of this paper are to use a voltage difference between the two gates to screen the drain voltage and therefore reduce short channel effects (SCEs). In this transistor the surface potential exhibits a step function, which causes the screening of the drain potential. This results in suppressed SCEs such as the hot-carrier effect and decreasing off-current with respect to shrinking of channel length. The obtained results of our transistor are compared to single gate (SG) SOI MOSFET that shows the DG SOI MOSFET performance is superior. The transistor has been simulated by SILVACO software.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125976826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441161
S. Kubota, Minoru Watanabe
Recently, optically reconfigurable gate arrays (OR-GAs) consisting of a gate array VLSI, a holographic memory, and a laser array have been developed to achieve a huge virtual gate count that is much larger than those of currently available VLSIs. Consequently, ORGAs with more than tera-gate capacity will be realized by exploiting the storage capacity of a holographic memory. However, in contrast to current field-programmable gate arrays (FPGAs), conventional ORGAs have an important shortcoming: they are not reprogrammable after fabrication because, to reprogram ORGAs, a holographic memory must be disassembled from its ORGA package and reprogrammed outside of the ORGA package using a holographic memory writer. Then it must be implemented onto the ORGA package with high precision beyond the capability of manual assembly. To remove that problem, this paper presents a new programmable optically reconfigurable gate array and its lens-less imaging holographic memory writer system. Furthermore, this paper presents discussion of the availability of this architecture and future plans based on experimental results.
{"title":"A lens-less imaging holographic memory writer system for a programmable optically reconfigurable gate array","authors":"S. Kubota, Minoru Watanabe","doi":"10.1109/ELECTRO.2009.5441161","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441161","url":null,"abstract":"Recently, optically reconfigurable gate arrays (OR-GAs) consisting of a gate array VLSI, a holographic memory, and a laser array have been developed to achieve a huge virtual gate count that is much larger than those of currently available VLSIs. Consequently, ORGAs with more than tera-gate capacity will be realized by exploiting the storage capacity of a holographic memory. However, in contrast to current field-programmable gate arrays (FPGAs), conventional ORGAs have an important shortcoming: they are not reprogrammable after fabrication because, to reprogram ORGAs, a holographic memory must be disassembled from its ORGA package and reprogrammed outside of the ORGA package using a holographic memory writer. Then it must be implemented onto the ORGA package with high precision beyond the capability of manual assembly. To remove that problem, this paper presents a new programmable optically reconfigurable gate array and its lens-less imaging holographic memory writer system. Furthermore, this paper presents discussion of the availability of this architecture and future plans based on experimental results.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125981411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441081
V. Gahlaut, R. Sharma, V. Srivastava
Travelling wave tubes (TWTs) are power amplifier for communication satellite. As the electron gun plays a significant role in determining the life and reliability of the space TWT, the same has been subjected for 3-dimensional thermal and structural analysis using FEA code COSMOS and ANSYS. Expansion in different electrodes like cathode, beam focus electrode (BFE) and anode in axial and radial direction has been simulated due to temperature distribution in the gun. In addition to the above, frequency analysis of electron gun assembly has also been carried out. A comparison of COSMOS and ANSYS results has been presented.
{"title":"Thermal and structural analysis of electron gun for high efficiency space TWT","authors":"V. Gahlaut, R. Sharma, V. Srivastava","doi":"10.1109/ELECTRO.2009.5441081","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441081","url":null,"abstract":"Travelling wave tubes (TWTs) are power amplifier for communication satellite. As the electron gun plays a significant role in determining the life and reliability of the space TWT, the same has been subjected for 3-dimensional thermal and structural analysis using FEA code COSMOS and ANSYS. Expansion in different electrodes like cathode, beam focus electrode (BFE) and anode in axial and radial direction has been simulated due to temperature distribution in the gun. In addition to the above, frequency analysis of electron gun assembly has also been carried out. A comparison of COSMOS and ANSYS results has been presented.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125199764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441088
Pramod Kumar, Rashid Mahmood, J. Kishor, A. Shrivastav
Here we design a compact size air suspended microstrip line fed patch antenna with semi circular cut on non radiating edge. This antenna has wide band width. The fractional bandwidth is approximately 20 % of 1.82 GHz. Without semicircular cut on each non radiating edge its aspect ratio is greater then 2 by which cross polarization occur, but using this technique the aspect ratio maintain up to 1.04 which avoid cross polarization & broaden more impedance bandwidth by air suspended antenna.
{"title":"Design of broad band microstrip shorted patch antenna with semicircular cut on non radiating edge","authors":"Pramod Kumar, Rashid Mahmood, J. Kishor, A. Shrivastav","doi":"10.1109/ELECTRO.2009.5441088","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441088","url":null,"abstract":"Here we design a compact size air suspended microstrip line fed patch antenna with semi circular cut on non radiating edge. This antenna has wide band width. The fractional bandwidth is approximately 20 % of 1.82 GHz. Without semicircular cut on each non radiating edge its aspect ratio is greater then 2 by which cross polarization occur, but using this technique the aspect ratio maintain up to 1.04 which avoid cross polarization & broaden more impedance bandwidth by air suspended antenna.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130023831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441038
Sabitabrata Dey, Sanjoy Mandal
This article presents a scheme of an optical ring resonator using digital signal processing technique. A very high free spectral range (FSR) is of paramount importance for commercial WDM system. Here the frequency response characteristics of a double ring resonator has been tailored up to an FSR of 200 GHz using delay line signal processing and Mason's rule.
{"title":"Performance of a wide FSR optical double ring resonator","authors":"Sabitabrata Dey, Sanjoy Mandal","doi":"10.1109/ELECTRO.2009.5441038","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441038","url":null,"abstract":"This article presents a scheme of an optical ring resonator using digital signal processing technique. A very high free spectral range (FSR) is of paramount importance for commercial WDM system. Here the frequency response characteristics of a double ring resonator has been tailored up to an FSR of 200 GHz using delay line signal processing and Mason's rule.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129738130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441176
A. Biswas
Uniaxial stress induced by recessed or embedded Si1−yCy source/ drain in nanoscale nMOSFETs is computed using finite element method adopted in numerical process simulator. The lateral, vertical and perpendicular stress components Sxx, Syy and Szz, respectively, are determined as a function of mole fraction y in the range 0.5 – 2.5 % and channel length L between 22–130 nm. Simulation results show that Sxx in the middle of the channel at a distance 0.35 nm below the oxide semiconductor interface decreases linearly with L, while the other components exhibit a stronger nonlinear dependence on length. The implications for further device and process modeling will be addressed in a nutshell.
{"title":"Determination of uniaxial stress of embedded Si1−yCy source/drain nMOSFETs using numerical simulation techniques","authors":"A. Biswas","doi":"10.1109/ELECTRO.2009.5441176","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441176","url":null,"abstract":"Uniaxial stress induced by recessed or embedded Si<inf>1−y</inf>C<inf>y</inf> source/ drain in nanoscale nMOSFETs is computed using finite element method adopted in numerical process simulator. The lateral, vertical and perpendicular stress components S<inf>xx</inf>, S<inf>yy</inf> and S<inf>zz</inf>, respectively, are determined as a function of mole fraction y in the range 0.5 – 2.5 % and channel length L between 22–130 nm. Simulation results show that S<inf>xx</inf> in the middle of the channel at a distance 0.35 nm below the oxide semiconductor interface decreases linearly with L, while the other components exhibit a stronger nonlinear dependence on length. The implications for further device and process modeling will be addressed in a nutshell.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127630914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441140
Ravi Kumar, R. R. Das, V. Mishra, R. Dwivedi
This paper presents a novel approach to odor discrimination using data obtained from the responses of thick film tin oxide sensor array fabricated at our laboratory and employing backpropagation algorithm trained artificial neural network based on fuzzy logic. Fuzzy membership values were used as target vectors to the proposed neural classifier. Three different versions of backpropagation algorithm were used to train the network and their performances have been compared. Superior learning and classification performance was obtained using proposed model trained with TRAINLM version of the backpropagation algorithm.
{"title":"A fuzzy logic based neural network classifier for qualitative classification of odors/gases","authors":"Ravi Kumar, R. R. Das, V. Mishra, R. Dwivedi","doi":"10.1109/ELECTRO.2009.5441140","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441140","url":null,"abstract":"This paper presents a novel approach to odor discrimination using data obtained from the responses of thick film tin oxide sensor array fabricated at our laboratory and employing backpropagation algorithm trained artificial neural network based on fuzzy logic. Fuzzy membership values were used as target vectors to the proposed neural classifier. Three different versions of backpropagation algorithm were used to train the network and their performances have been compared. Superior learning and classification performance was obtained using proposed model trained with TRAINLM version of the backpropagation algorithm.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117023230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441083
T. Tiwari, Manoj Phatangare
This paper deals with the effect of magnetic field on the performance of magnetron magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. An experimental is carried out to study the effect of the magnetic field on the dose of linac system and it is observed that with the application of proper magnetic field, the dose is increased by more than 22 % which is very useful for accelerator technologists.
{"title":"Effect of magnetic field on the performance of S-band linear accelerator system","authors":"T. Tiwari, Manoj Phatangare","doi":"10.1109/ELECTRO.2009.5441083","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441083","url":null,"abstract":"This paper deals with the effect of magnetic field on the performance of magnetron magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. An experimental is carried out to study the effect of the magnetic field on the dose of linac system and it is observed that with the application of proper magnetic field, the dose is increased by more than 22 % which is very useful for accelerator technologists.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122607586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441149
V. Tomar, S.K. Gupta, S. Yadav, D. Gautam
The present paper reports the optimization and analysis of the interconnect parameters such as ground and coupling capacitance which play very important roll in the design and development of future microelectronics devices. Here, we have optimized ground capacitance along with the variation in dielectric thickness and interwire spacing respectively. It has been observed that ground capacitance increases with increase in interwire spacing. It is also find out that the ground capacitance decreases with simultaneously increase in dielectric thickness.
{"title":"Investigation of interconnect parameters for high speed microelectronics devices applications","authors":"V. Tomar, S.K. Gupta, S. Yadav, D. Gautam","doi":"10.1109/ELECTRO.2009.5441149","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441149","url":null,"abstract":"The present paper reports the optimization and analysis of the interconnect parameters such as ground and coupling capacitance which play very important roll in the design and development of future microelectronics devices. Here, we have optimized ground capacitance along with the variation in dielectric thickness and interwire spacing respectively. It has been observed that ground capacitance increases with increase in interwire spacing. It is also find out that the ground capacitance decreases with simultaneously increase in dielectric thickness.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122489921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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