Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441183
D. Talwar
Unlike the conventional III-V semiconducting alloys where a smaller lattice constant generally causes an increase in the band gap, a smaller covalent radius of N with a larger electronegativity causes a strong bowing parameter in dilute III–V-Ns. Consequently the addition of N in GaAs or InGaAs decreases the band gap (Eg) dramatically. This strong dependence of Eg on the N content in III-As-N has provided opportunities to engineer many material properties suitable for the fiber-optical communications at 1.3 and 1.55 □m wavelengths as well as in designing high efficiency solar cells. The purpose of this talk is to address important issues required for understanding the physics and technology of novel dilute III–V-Ns- especially to comprehend the role of N in such materials. We will present the results of our comprehensive analyses of the Fourier transform infrared (FTIR) absorption and Raman scattering data on impurity modes in dilute ternary GaAs1−xNx, [GaAs1−xNx] (x ≪ 0.03) and quaternary InGaAs(P)N alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). For the low composition of N in GaAs1−xNx [GaAs1−xNx] (i.e., x ≪ 0.015), we find that most of the N atoms occupy the As [P] sublattice NAs [NP]. They prefer, however, moving out of their substitutional sites to more energetically favorable locations at higher x values. To comprehend the large width of the localized vibrational mode (LVM) observed in GaAs1−xNx near 470 cm−1, we have studied the possibilities of Ga-isotopes (69Ga and 71Ga) and/or intrinsic defects participating with NAs in different configurations. Results for the N-local modes and its isotopic shifts are found in good agreement with the FTIR data. Although, the presence of isolated N- interstitial (Nint) in GaAs1−xNx is quite unlikely at higher compositions (0.03 ≫ x ≫ 0.015), the formations of non-radiative complex microstructures involving N and/or intrinsic defects are energetically favorable. We discuss the role of such defects on the performance of electronic devices especially photo-detectors and long wavelength vertical cavity surface-emitting lasers (VCSELs).
{"title":"Novel dilute III–V-Ns : From physics to applications","authors":"D. Talwar","doi":"10.1109/ELECTRO.2009.5441183","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441183","url":null,"abstract":"Unlike the conventional III-V semiconducting alloys where a smaller lattice constant generally causes an increase in the band gap, a smaller covalent radius of N with a larger electronegativity causes a strong bowing parameter in dilute III–V-Ns. Consequently the addition of N in GaAs or InGaAs decreases the band gap (E<inf>g</inf>) dramatically. This strong dependence of E<inf>g</inf> on the N content in III-As-N has provided opportunities to engineer many material properties suitable for the fiber-optical communications at 1.3 and 1.55 □m wavelengths as well as in designing high efficiency solar cells. The purpose of this talk is to address important issues required for understanding the physics and technology of novel dilute III–V-Ns- especially to comprehend the role of N in such materials. We will present the results of our comprehensive analyses of the Fourier transform infrared (FTIR) absorption and Raman scattering data on impurity modes in dilute ternary GaAs<inf>1−x</inf>N<inf>x</inf>, [GaAs<inf>1−x</inf>N<inf>x</inf>] (x ≪ 0.03) and quaternary InGaAs(P)N alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). For the low composition of N in GaAs<inf>1−x</inf>N<inf>x</inf> [GaAs<inf>1−x</inf>N<inf>x</inf>] (i.e., x ≪ 0.015), we find that most of the N atoms occupy the As [P] sublattice NAs [N<inf>P</inf>]. They prefer, however, moving out of their substitutional sites to more energetically favorable locations at higher x values. To comprehend the large width of the localized vibrational mode (LVM) observed in GaAs<inf>1−x</inf>N<inf>x</inf> near 470 cm<sup>−1</sup>, we have studied the possibilities of Ga-isotopes (<sup>69</sup>Ga and <sup>71</sup>Ga) and/or intrinsic defects participating with NAs in different configurations. Results for the N-local modes and its isotopic shifts are found in good agreement with the FTIR data. Although, the presence of isolated N- interstitial (N<inf>int</inf>) in GaAs<inf>1−x</inf>N<inf>x</inf> is quite unlikely at higher compositions (0.03 ≫ x ≫ 0.015), the formations of non-radiative complex microstructures involving N and/or intrinsic defects are energetically favorable. We discuss the role of such defects on the performance of electronic devices especially photo-detectors and long wavelength vertical cavity surface-emitting lasers (VCSELs).","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115265324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441163
V. Sanju, N. Chiplunkar, Bini Y. Baby
The need of high performaning, mega functionality solutions are becoming important day by day. The implementation of these mega functional modules which was done using common bus architecture, parallel bus architecture, pipelining are becoming ineffective and posing a bottleneck in terms of performance and throughput in this billion transistor era. To overcome these performance issues, a new paradigm in interconnect technology was proposed. The idea was to implant the concept of data transfer in data communication networks into silicon thus providing advantages of low power scalable high performing architecture with a small increase in die area for routing resources. This paper discusses the design of a generic frame work for network on chip based systems using store and forward strategy.
{"title":"Design of a generic network on chip frame work for store & forward routing for 2D mesh topology","authors":"V. Sanju, N. Chiplunkar, Bini Y. Baby","doi":"10.1109/ELECTRO.2009.5441163","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441163","url":null,"abstract":"The need of high performaning, mega functionality solutions are becoming important day by day. The implementation of these mega functional modules which was done using common bus architecture, parallel bus architecture, pipelining are becoming ineffective and posing a bottleneck in terms of performance and throughput in this billion transistor era. To overcome these performance issues, a new paradigm in interconnect technology was proposed. The idea was to implant the concept of data transfer in data communication networks into silicon thus providing advantages of low power scalable high performing architecture with a small increase in die area for routing resources. This paper discusses the design of a generic frame work for network on chip based systems using store and forward strategy.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114253367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441162
M. Santosh, K. C. Behera, S. Bose
This paper describes the design of a pseudo flip-around sample- hold circuit for a 10-bit, 5-Msamples/sec pipeline ADC. The sample-hold circuit is simulated in 0.35 µm Austria Microsystems technology with a 1 KHz, 1.2 Vp-p sinusoidal input and a sampling clock of 5 MHz. The simulation shows a worst case sampling error of 1mV, SNR of 60dB. The layout of the sample hold circuit occupies an area of 0.007mm2 and consumes 1.7 mW of power.
{"title":"Design of pseudo flip-around sample hold- circuit for 10-bit, 5-Msamples/Sec pipeline ADC","authors":"M. Santosh, K. C. Behera, S. Bose","doi":"10.1109/ELECTRO.2009.5441162","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441162","url":null,"abstract":"This paper describes the design of a pseudo flip-around sample- hold circuit for a 10-bit, 5-Msamples/sec pipeline ADC. The sample-hold circuit is simulated in 0.35 µm Austria Microsystems technology with a 1 KHz, 1.2 Vp-p sinusoidal input and a sampling clock of 5 MHz. The simulation shows a worst case sampling error of 1mV, SNR of 60dB. The layout of the sample hold circuit occupies an area of 0.007mm2 and consumes 1.7 mW of power.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132670425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441082
A. Saini, M. Alaria, H. Khatun, A. Bera, A. Sinha
In this paper estimation of the eigen frequency and quality factor in an interaction cavity of Gyrotron for operating mode is discussed. Eigen mode analysis for high frequency has been carried out using CST Microwave studio to have an idea about the excitation of operating modes in the interaction structure in the gyrotron. The simulation has been done using CST (MWS) for 120 GHz, 1MW Gyrotron obtained the simulated Eigen frequency as 120.142 GHz.
{"title":"Study of interaction structure for 120GHz,1MW Gyrotron","authors":"A. Saini, M. Alaria, H. Khatun, A. Bera, A. Sinha","doi":"10.1109/ELECTRO.2009.5441082","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441082","url":null,"abstract":"In this paper estimation of the eigen frequency and quality factor in an interaction cavity of Gyrotron for operating mode is discussed. Eigen mode analysis for high frequency has been carried out using CST Microwave studio to have an idea about the excitation of operating modes in the interaction structure in the gyrotron. The simulation has been done using CST (MWS) for 120 GHz, 1MW Gyrotron obtained the simulated Eigen frequency as 120.142 GHz.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441113
Devesh Kumar, R. Verma, B. R. Taunk
This paper presents a method to design matching networks using single / double stub microstrip line for input and output port of microwave LNA in a prescribed frequency band with requirements about the transducer gain flatness is presented. Microstrip line is used when wavelength becomes significantly small compared with the characteristic circuit component length. At microwave frequency, the influence of parasitics in discrete elements becomes more noticeable. This limits their use of in high frequency applications. The superior performance characteristics of the microstrip line make it one of the most important medium of transmission in microwave transistor amplifiers in the microwave integrated-circuit technology. Matlab programming is used to obtain the Smith chart results for input and output microstrip line matching networks.
{"title":"Graphical analysis of microstrip line matching network for 2.4 GHz microwave LNA via matlab coding","authors":"Devesh Kumar, R. Verma, B. R. Taunk","doi":"10.1109/ELECTRO.2009.5441113","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441113","url":null,"abstract":"This paper presents a method to design matching networks using single / double stub microstrip line for input and output port of microwave LNA in a prescribed frequency band with requirements about the transducer gain flatness is presented. Microstrip line is used when wavelength becomes significantly small compared with the characteristic circuit component length. At microwave frequency, the influence of parasitics in discrete elements becomes more noticeable. This limits their use of in high frequency applications. The superior performance characteristics of the microstrip line make it one of the most important medium of transmission in microwave transistor amplifiers in the microwave integrated-circuit technology. Matlab programming is used to obtain the Smith chart results for input and output microstrip line matching networks.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130695027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441061
S. Dasgupta, C. Bose
In this paper, design of a phase shifted 1D photonic crystal filter with nearly squared flat top spectral characteristics is reported. Estimated phase shifts are incorporated into the structure through proper extension in dielectric layers of specific unit cells. Performance of the flat top filter is analyzed using transfer matrix method. The flat top pass band characteristics of such filter is tailored to support shifts of signal wavelength in an allotted channel within its tolerance limit, which is specified as 14 nm by ITU-T Recommendation G.694.2 in case of a coarse wavelength division multiplexing (CWDM) system.
{"title":"Phase shifted photonic crystal based filter with flat-top response","authors":"S. Dasgupta, C. Bose","doi":"10.1109/ELECTRO.2009.5441061","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441061","url":null,"abstract":"In this paper, design of a phase shifted 1D photonic crystal filter with nearly squared flat top spectral characteristics is reported. Estimated phase shifts are incorporated into the structure through proper extension in dielectric layers of specific unit cells. Performance of the flat top filter is analyzed using transfer matrix method. The flat top pass band characteristics of such filter is tailored to support shifts of signal wavelength in an allotted channel within its tolerance limit, which is specified as 14 nm by ITU-T Recommendation G.694.2 in case of a coarse wavelength division multiplexing (CWDM) system.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114186438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441151
H. Ghosh, R. Chari
One dimensional Mott-Hubbard insulators are modeled within 2-band extended Hubbard model. The model is solved exactly numerically for finite lattice. These numerical data are used to compute various nonlinear susceptibilities like third Harmonic generation, two photon absorption, electro absorption as well as the stimulated Raman scattering. The stimulated Raman scattering susceptibility for three one-dimensional Mott-Hubbard insulators is found to be very large even compared to other nonlinear optical susceptibilities. This is the first ever study on stimulated Raman scattering of one dimensional strongly correlated systems. This leads to a potential for strong Stokes generation in the THz regime from these compounds.
{"title":"Stimulated Raman scattering in one-dimensional Mott-Hubbard insulators: a novel THz source","authors":"H. Ghosh, R. Chari","doi":"10.1109/ELECTRO.2009.5441151","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441151","url":null,"abstract":"One dimensional Mott-Hubbard insulators are modeled within 2-band extended Hubbard model. The model is solved exactly numerically for finite lattice. These numerical data are used to compute various nonlinear susceptibilities like third Harmonic generation, two photon absorption, electro absorption as well as the stimulated Raman scattering. The stimulated Raman scattering susceptibility for three one-dimensional Mott-Hubbard insulators is found to be very large even compared to other nonlinear optical susceptibilities. This is the first ever study on stimulated Raman scattering of one dimensional strongly correlated systems. This leads to a potential for strong Stokes generation in the THz regime from these compounds.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116786722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441135
Ajay Singh, Soni Kumari
Accuracy and efficiency multipurpose structural antenna system for ship can be enhanced by using OFDM features and FRM technique. The basic model of OFDM based spatial multiplexing is fit for high data rate transmission which will increase the diversity and gain of the antenna. FRM technique will provide more accurate frequency range; hence this can be used for software defined radio.
{"title":"Enhanced antennae system with OFDM and FRM technique","authors":"Ajay Singh, Soni Kumari","doi":"10.1109/ELECTRO.2009.5441135","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441135","url":null,"abstract":"Accuracy and efficiency multipurpose structural antenna system for ship can be enhanced by using OFDM features and FRM technique. The basic model of OFDM based spatial multiplexing is fit for high data rate transmission which will increase the diversity and gain of the antenna. FRM technique will provide more accurate frequency range; hence this can be used for software defined radio.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115419280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441076
R. Seshadri, P. Rao, K. V. Rao, S. K. Datta, S. Kamath, P. K. Jain
The effect of inhomogeneous dispersion shaping of a helical SWS on the backward-wave has been studied. Theoretical simulations of three types of dispersion, namely, positive, flat and negative, achieved in an inhomogeneous structure and the interaction impedance characteristics thereof were carried out. The analysis of backward-wave oscillation criterion has been carried out to assess the effects of dispersion shaping and the beam-filling factor. A negative dispersion structure has been found to be advantageous in improving the threshold for backward wave oscillation.
{"title":"Effect of inhomogeneous dispersion shaping of a helical SWS on the backward-wave oscillation criterion","authors":"R. Seshadri, P. Rao, K. V. Rao, S. K. Datta, S. Kamath, P. K. Jain","doi":"10.1109/ELECTRO.2009.5441076","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441076","url":null,"abstract":"The effect of inhomogeneous dispersion shaping of a helical SWS on the backward-wave has been studied. Theoretical simulations of three types of dispersion, namely, positive, flat and negative, achieved in an inhomogeneous structure and the interaction impedance characteristics thereof were carried out. The analysis of backward-wave oscillation criterion has been carried out to assess the effects of dispersion shaping and the beam-filling factor. A negative dispersion structure has been found to be advantageous in improving the threshold for backward wave oscillation.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122934100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-12-01DOI: 10.1109/ELECTRO.2009.5441079
S. Dwivedi, P. Jain
Magnetically Insulated Line Oscillator (MILO) is a relatively new type of coaxial crossed field electron beam device designed specifically to generate microwave power at the gigawatt level. Unlike other crossed-field microwave sources, the MILO uses the self-magnetic field produced by current flow in the central cathode rather than the field produced by an external magnet to cut off electron flow to the anode. In the present work, a S-Band MILO has been designed with voltage 180kV, current 35kA at frequency 2.6 GHz. It was composed of four cavities acting as slow wave structure, one extractor and three choke cavities. Using MAGIC PIC simulation code, the deive is simulated for its hot performance and found the desired power output at the designed frequency with efficiency of device is 10%.
{"title":"PIC simulation of S-Band Magnetically Insulated Line Oscillator","authors":"S. Dwivedi, P. Jain","doi":"10.1109/ELECTRO.2009.5441079","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441079","url":null,"abstract":"Magnetically Insulated Line Oscillator (MILO) is a relatively new type of coaxial crossed field electron beam device designed specifically to generate microwave power at the gigawatt level. Unlike other crossed-field microwave sources, the MILO uses the self-magnetic field produced by current flow in the central cathode rather than the field produced by an external magnet to cut off electron flow to the anode. In the present work, a S-Band MILO has been designed with voltage 180kV, current 35kA at frequency 2.6 GHz. It was composed of four cavities acting as slow wave structure, one extractor and three choke cavities. Using MAGIC PIC simulation code, the deive is simulated for its hot performance and found the desired power output at the designed frequency with efficiency of device is 10%.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124859173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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