Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378952
K. Yamazawa, M. Okumura, M. Uemura, H. Yamashita, E. Forster
The cathode-streamer initiation process in cyclohexane under nonuniform field was observed. An impulse voltage was applied to a tungsten needle of 0.5 /spl mu/m radius. The streamer growth was photographed using a high-magnification, high-speed shadowgraph system. The streamer initiation voltage was determined to be -5.18 kV. The initial streamer structure was filamentary. Within 100 ns of inception it changed to a bushlike structure which increased with increasing voltage until a secondary stem appeared and the process appeared to repeat itself. After their expansion process stopped they were noted to break into small bubbles. Partial discharges (PDs) were measured using an LED (light-emitting diode) current measurement system. The relation between PD and streamer growth is discussed.<>
{"title":"Observation of cathode streamer initiation in dielectric liquids under high magnification","authors":"K. Yamazawa, M. Okumura, M. Uemura, H. Yamashita, E. Forster","doi":"10.1109/CEIDP.1993.378952","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378952","url":null,"abstract":"The cathode-streamer initiation process in cyclohexane under nonuniform field was observed. An impulse voltage was applied to a tungsten needle of 0.5 /spl mu/m radius. The streamer growth was photographed using a high-magnification, high-speed shadowgraph system. The streamer initiation voltage was determined to be -5.18 kV. The initial streamer structure was filamentary. Within 100 ns of inception it changed to a bushlike structure which increased with increasing voltage until a secondary stem appeared and the process appeared to repeat itself. After their expansion process stopped they were noted to break into small bubbles. Partial discharges (PDs) were measured using an LED (light-emitting diode) current measurement system. The relation between PD and streamer growth is discussed.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125754797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378936
A. Yellaiah
Experiments were carried out to measure the internal inductance of a capacitor by the ramp pulse method. It is demonstrated that the minimum width of the excitation pulse should be at least 10 times larger than the R/sub i/-C/sub t/ time constant. Care must be taken to minimize the extraneous signal pickup within the test circuit, and every lead must be as short as possible and shielded. It is also shown that suitable calibration should be carried out with noninductive resistors.<>
用斜脉冲法测量了电容器的内部电感。结果表明，激励脉冲的最小宽度应至少大于R/sub i/ c /sub t/时间常数的10倍。必须注意尽量减少测试电路内的外来信号拾取，并且每根引线必须尽可能短并屏蔽。还表明，应对无感电阻进行适当的校准
{"title":"Measurement of internal inductance of capacitors by ramp pulse response technique","authors":"A. Yellaiah","doi":"10.1109/CEIDP.1993.378936","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378936","url":null,"abstract":"Experiments were carried out to measure the internal inductance of a capacitor by the ramp pulse method. It is demonstrated that the minimum width of the excitation pulse should be at least 10 times larger than the R/sub i/-C/sub t/ time constant. Care must be taken to minimize the extraneous signal pickup within the test circuit, and every lead must be as short as possible and shielded. It is also shown that suitable calibration should be carried out with noninductive resistors.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"33 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131917090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378965
M.-S.E. Wang, M. Campos, M. Li, L. Oliveira
The authors report a set of thermally stimulated discharging current (TSDC) spectra of undoped poly(p-phenylene) (PPP) polymer over the temperature range of 4 to 500/spl deg/K. At heating rates of 2 and 3.5 /spl deg/C/min, five TSDC peaks were observed at around 136, 159, 245, 290, and 343 /spl deg/K, respectively. As the first stage of the TSDC study of doping effect on conducting polymers, the authors present the TSDC spectrum of a low-level FeCl/sub 3/-doped PPP polymer. It was found that doping caused a fivefold increase in the 245 /spl deg/K TSDC peak whereas DC conductivity was increased by nearly 6 orders of magnitude, i.e., from 10/sup -14/ to 10/sup -8/ S/cm, by doping. The differential scanning calorimetry spectrum of PPP is also presented.<>
{"title":"Thermally stimulated discharging current spectra of poly(p-phenylene) polymer","authors":"M.-S.E. Wang, M. Campos, M. Li, L. Oliveira","doi":"10.1109/CEIDP.1993.378965","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378965","url":null,"abstract":"The authors report a set of thermally stimulated discharging current (TSDC) spectra of undoped poly(p-phenylene) (PPP) polymer over the temperature range of 4 to 500/spl deg/K. At heating rates of 2 and 3.5 /spl deg/C/min, five TSDC peaks were observed at around 136, 159, 245, 290, and 343 /spl deg/K, respectively. As the first stage of the TSDC study of doping effect on conducting polymers, the authors present the TSDC spectrum of a low-level FeCl/sub 3/-doped PPP polymer. It was found that doping caused a fivefold increase in the 245 /spl deg/K TSDC peak whereas DC conductivity was increased by nearly 6 orders of magnitude, i.e., from 10/sup -14/ to 10/sup -8/ S/cm, by doping. The differential scanning calorimetry spectrum of PPP is also presented.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132938735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378971
E. Vicario, N. Rosenberg, R. Renoud
The problem of the charge distribution within an insulator bombarded by a narrow electron beam is studied using the Monte Carlo technique. In contrast to the conductor or semiconductor case, the electron-insulator interaction is shown to depend closely on the specimen environment; has been taken into account; this assumption is valuable if the specimen is sufficiently large and thick, and if the working distance is not too short. The working distance acts on the spreading of the incident beam via the surface potential.<>
{"title":"Insulator charging simulation","authors":"E. Vicario, N. Rosenberg, R. Renoud","doi":"10.1109/CEIDP.1993.378971","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378971","url":null,"abstract":"The problem of the charge distribution within an insulator bombarded by a narrow electron beam is studied using the Monte Carlo technique. In contrast to the conductor or semiconductor case, the electron-insulator interaction is shown to depend closely on the specimen environment; has been taken into account; this assumption is valuable if the specimen is sufficiently large and thick, and if the working distance is not too short. The working distance acts on the spreading of the incident beam via the surface potential.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"13 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132737481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378902
P. Cygan, J.P. Zheng, S. Yen, T. Jow
Polyethylene-2, 6-naphthalate (PEN) film can be modified through exposure to the temperatures exceeding its glass transition temperature (122/spl deg/C) and crystallization temperature (185/spl deg/C), where the biaxially oriented and semicrystalline structure of the film can undergo reorganization. Experiments were designed to characterize the effects of this type of treatment on the morphology and dielectric properties of the film. Several heat treatments, with some approaching the film's melting temperature (265/spl deg/C), were applied. Following the exposure, the dielectric properties of film samples were characterized and correlated to changes in the morphology. Increase in the breakdown strength was observed in samples where the percentage of crystallinity increased through thermal treatments. Increases from 8.5% for free standing samples to 15% for restrained samples were achieved.<>
{"title":"Thermal treatment of polyethylene-2, 6-naphthalate (PEN) film and its influence on the morphology and dielectric strength","authors":"P. Cygan, J.P. Zheng, S. Yen, T. Jow","doi":"10.1109/CEIDP.1993.378902","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378902","url":null,"abstract":"Polyethylene-2, 6-naphthalate (PEN) film can be modified through exposure to the temperatures exceeding its glass transition temperature (122/spl deg/C) and crystallization temperature (185/spl deg/C), where the biaxially oriented and semicrystalline structure of the film can undergo reorganization. Experiments were designed to characterize the effects of this type of treatment on the morphology and dielectric properties of the film. Several heat treatments, with some approaching the film's melting temperature (265/spl deg/C), were applied. Following the exposure, the dielectric properties of film samples were characterized and correlated to changes in the morphology. Increase in the breakdown strength was observed in samples where the percentage of crystallinity increased through thermal treatments. Increases from 8.5% for free standing samples to 15% for restrained samples were achieved.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127646832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378979
K. Oh, C. Ong, B. Tan, C. Gressus
The size effect (SF) in a dielectric subjected to a surface space charge field has been defined as the slope of the curve ln(V/sub s//r) vs ln(r), where V/sub s/ and /spl Gamma/ are the critical surface potential and length of the sample, respectively. SF is an important material parameter affecting the breakdown voltage, the space charge detrapping field, the friction coefficient, the wear and the fracture toughness of the dielectric. In the present work, the SF effect was investigated. The experimental study was carried out in an SEM (scanning electron microscope) using an electron beam to bombard the dielectric. The space charge distributions for different sizes are obtained separately from macroscopic equations and microscopic simulation.<>
介质在表面空间电荷场作用下的尺寸效应(SF)被定义为曲线ln(V/sub s//r) vs ln(r)的斜率，其中V/sub s/和/spl Gamma/分别是样品的临界表面电位和长度。SF是影响介质击穿电压、空间电荷脱集场、摩擦系数、磨损和断裂韧性的重要材料参数。在本工作中，研究了顺流效应。在扫描电子显微镜下，利用电子束轰击介质进行了实验研究。不同尺寸下的空间电荷分布分别由宏观方程和微观模拟得到。
{"title":"Monte Carlo simulation of size effect on the dielectric strength of /spl alpha/-quartz","authors":"K. Oh, C. Ong, B. Tan, C. Gressus","doi":"10.1109/CEIDP.1993.378979","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378979","url":null,"abstract":"The size effect (SF) in a dielectric subjected to a surface space charge field has been defined as the slope of the curve ln(V/sub s//r) vs ln(r), where V/sub s/ and /spl Gamma/ are the critical surface potential and length of the sample, respectively. SF is an important material parameter affecting the breakdown voltage, the space charge detrapping field, the friction coefficient, the wear and the fracture toughness of the dielectric. In the present work, the SF effect was investigated. The experimental study was carried out in an SEM (scanning electron microscope) using an electron beam to bombard the dielectric. The space charge distributions for different sizes are obtained separately from macroscopic equations and microscopic simulation.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123973868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378947
K. Ishii, T. Morita, D. Isshiki, Y. Ohki
SiO/sub 2/ films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO/sub 2/ film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm/sup -1/ as a function of the deposition temperature, the effect of the deposition temperature on the contents of H/sub 2/O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K.<>
{"title":"Breakdown characteristics of thin SiO/sub 2/ films deposited from TEOS using plasma CVD method","authors":"K. Ishii, T. Morita, D. Isshiki, Y. Ohki","doi":"10.1109/CEIDP.1993.378947","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378947","url":null,"abstract":"SiO/sub 2/ films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO/sub 2/ film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm/sup -1/ as a function of the deposition temperature, the effect of the deposition temperature on the contents of H/sub 2/O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125559499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378935
M.-S.E. Wang, S. Gubanski
Two types of room-temperature-vulcanized silicone rubber high-voltage outdoor insulator coatings were cured for different periods up to 600 hours at 25/spl deg/C and 80% relative humidity. The thermally stimulated discharging current (TSDC) of samples with different curing degrees, ie., being cured for different periods, was measured at a heating rate of 7/spl deg/C/min over the temperature range of 25 to 180/spl deg/C. It was found that the TSD current peak temperature, T/sub m/, increased with increase of curing period, and saturated finally at a stabilized value when the curing process was completed. The net increases of T/sub m/S, from the beginning to the completion of the curing, were 25 and 35/spl deg/C, respectively, for the two types of samples. A logarithmic relationship between the T/sub m/ and the curing time, t/sub c/, was established on the basis of experimental data. An expression for the relaxation time in the terms of t/sub c/ was derived based on the TSDC theory.<>
{"title":"Application of TSDC technique in study of relaxation during curing process of RTV silicone rubbers","authors":"M.-S.E. Wang, S. Gubanski","doi":"10.1109/CEIDP.1993.378935","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378935","url":null,"abstract":"Two types of room-temperature-vulcanized silicone rubber high-voltage outdoor insulator coatings were cured for different periods up to 600 hours at 25/spl deg/C and 80% relative humidity. The thermally stimulated discharging current (TSDC) of samples with different curing degrees, ie., being cured for different periods, was measured at a heating rate of 7/spl deg/C/min over the temperature range of 25 to 180/spl deg/C. It was found that the TSD current peak temperature, T/sub m/, increased with increase of curing period, and saturated finally at a stabilized value when the curing process was completed. The net increases of T/sub m/S, from the beginning to the completion of the curing, were 25 and 35/spl deg/C, respectively, for the two types of samples. A logarithmic relationship between the T/sub m/ and the curing time, t/sub c/, was established on the basis of experimental data. An expression for the relaxation time in the terms of t/sub c/ was derived based on the TSDC theory.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126691185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378997
J. K. Nelson
The historical background on electrokinetic effects in pumped dielectric fields is first reviewed. Attention in this survey paper is then given to electrification basics, experimental electrification in a transformer context, and the dielectric integrity of moving fluids.<>
{"title":"Electrokinetic effects in pumped dielectric fluids","authors":"J. K. Nelson","doi":"10.1109/CEIDP.1993.378997","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378997","url":null,"abstract":"The historical background on electrokinetic effects in pumped dielectric fields is first reviewed. Attention in this survey paper is then given to electrification basics, experimental electrification in a transformer context, and the dielectric integrity of moving fluids.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122190755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-17DOI: 10.1109/CEIDP.1993.378916
H. Wang, Y. Xu
Dielectric relaxation spectra are used to study the degradation of a ZnO varistor under 8/20/spl mu/s impulse current. The relationship between dielectric relaxation spectra and the distribution of migration ions is investigated. Dielectric-relaxation measurement is shown to be a reliable method for studying the degradation of non-Ohmic ZnO ceramics. The frequency spectra of dielectric loss are shifted to low-frequency regions after stressing by impulse current. The shift is attributed to the formation of equivalent dipoles in the grain boundary by the migration of interstitials.<>
{"title":"Degradation of ZnO varistor and its dielectric relaxation","authors":"H. Wang, Y. Xu","doi":"10.1109/CEIDP.1993.378916","DOIUrl":"https://doi.org/10.1109/CEIDP.1993.378916","url":null,"abstract":"Dielectric relaxation spectra are used to study the degradation of a ZnO varistor under 8/20/spl mu/s impulse current. The relationship between dielectric relaxation spectra and the distribution of migration ions is investigated. Dielectric-relaxation measurement is shown to be a reliable method for studying the degradation of non-Ohmic ZnO ceramics. The frequency spectra of dielectric loss are shifted to low-frequency regions after stressing by impulse current. The shift is attributed to the formation of equivalent dipoles in the grain boundary by the migration of interstitials.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125142734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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