A far-field interferometry is presented to track the 3D positions of an optically trapped particle. This method can resolve the displacement within nanometers by measuring the intensity shift in the back-focal-plane of the lens which is introduced by the interference between the outgoing laser beam and scattered light from the trapped particle. Factors that affect its characteristics are elaborately analyzed using approximate formula and FDTD stimulation. Also, we propose a valid method to minimize the thermal noise that introduced by Brownian motion of the trapped particle.
{"title":"Back-Focal-Plane Interferometry for 3D Position Tracking in Optical Tweezers","authors":"Hongjun Liu, Hui-zhu Hu, Minqiang Tie, Wei Zhang, Yu-qing Shen","doi":"10.1109/SOPO.2012.6270909","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270909","url":null,"abstract":"A far-field interferometry is presented to track the 3D positions of an optically trapped particle. This method can resolve the displacement within nanometers by measuring the intensity shift in the back-focal-plane of the lens which is introduced by the interference between the outgoing laser beam and scattered light from the trapped particle. Factors that affect its characteristics are elaborately analyzed using approximate formula and FDTD stimulation. Also, we propose a valid method to minimize the thermal noise that introduced by Brownian motion of the trapped particle.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121126288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271065
Q. Lv, Xiqu Chen, Z. Gan
Some equipments are required for optical limiting against laser pulses. Multi-wall carbon nanotubes (MWNTs) have exhibit perfect optical limiting property. The size-fractionation of MWNTs/polydimethylsiloxane (PDMS) films has been achieved. The Z-scan experiments and transmission measurements with 532 nm wavelength laser pulses shows that the optical limiting behavior of MWNTs/PDMS films solution is size-dependent.
{"title":"Size-Dependent in MWNTs/PDMS Composite Films","authors":"Q. Lv, Xiqu Chen, Z. Gan","doi":"10.1109/SOPO.2012.6271065","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271065","url":null,"abstract":"Some equipments are required for optical limiting against laser pulses. Multi-wall carbon nanotubes (MWNTs) have exhibit perfect optical limiting property. The size-fractionation of MWNTs/polydimethylsiloxane (PDMS) films has been achieved. The Z-scan experiments and transmission measurements with 532 nm wavelength laser pulses shows that the optical limiting behavior of MWNTs/PDMS films solution is size-dependent.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126626017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The experiment uses pulse laser as light source to induce human nails producing laser plasma under the atmospheric environment. Then analyze lead elements in human nails through quantitative analysis method. The experiment develops a group of LIBS optimum conditions to survey the human nails, including single laser pulse energy, the delay time of pulse laser transmission and plasma gathering by spectroscope, the distance of lens and nails, etc. The experiment shows that many illnesses are related to heavy metal elements, which can be tested in the body tissues such as nails. This paper adopts external standard method analyses the content of Pb in the 405.7807nm. Experiment results show that there is a good linear relationship between the content of Pb and spectrum intensity. It also indicates that the LIBS technology is a fast and effective medical detection method.
{"title":"Quantitative Analysis of Pb with Laser-Induced Breakdown Spectroscopy in Human's Nail","authors":"Jianhua Ye, X. Wan, Zhi-min Zhang, Qi Chen, Changhai Deng, Jiakun Zhao","doi":"10.1109/SOPO.2012.6270427","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270427","url":null,"abstract":"The experiment uses pulse laser as light source to induce human nails producing laser plasma under the atmospheric environment. Then analyze lead elements in human nails through quantitative analysis method. The experiment develops a group of LIBS optimum conditions to survey the human nails, including single laser pulse energy, the delay time of pulse laser transmission and plasma gathering by spectroscope, the distance of lens and nails, etc. The experiment shows that many illnesses are related to heavy metal elements, which can be tested in the body tissues such as nails. This paper adopts external standard method analyses the content of Pb in the 405.7807nm. Experiment results show that there is a good linear relationship between the content of Pb and spectrum intensity. It also indicates that the LIBS technology is a fast and effective medical detection method.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"19 3 Suppl 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125992230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270948
Xin Zou, Changyu Shen, Jin-lei Chu, Yi Yang
Eu2+, Mn2+ codoped Ba3MgSi2O8 single-host white emission phosphor was prepared by solid-state reaction method. Three emission bands peaking at 435nm, 480nm and 615nm were observed under excitation wavelength of 380 nm. The 435nm and 480nm emission bands are attributed to 5d→4f transition of Eu2+ ions partially replaces Ba2+ sites in host. The emission band peaking at 615nm originates from the 4T1→6A1 transition of Mn2+ ions. When the concentrations of the Eu2+, Mn2+ and Al3+ were 0.1mol, 0.1mol and 0.35mol respectively, the sample presented white emitting under excitation wavelength of 380 nm.
{"title":"Eu2+, Mn2+ Co-Doped Ba3MgSi2O8 Single-Host White Emission Phosphor","authors":"Xin Zou, Changyu Shen, Jin-lei Chu, Yi Yang","doi":"10.1109/SOPO.2012.6270948","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270948","url":null,"abstract":"Eu<sup>2+</sup>, Mn<sup>2+</sup> codoped Ba<sub>3</sub>MgSi<sub>2</sub>O<sub>8</sub> single-host white emission phosphor was prepared by solid-state reaction method. Three emission bands peaking at 435nm, 480nm and 615nm were observed under excitation wavelength of 380 nm. The 435nm and 480nm emission bands are attributed to 5d→4f transition of Eu<sup>2+</sup> ions partially replaces Ba<sup>2+</sup> sites in host. The emission band peaking at 615nm originates from the <sup>4</sup>T<sub>1</sub>→<sup>6</sup>A<sub>1</sub> transition of Mn<sup>2+</sup> ions. When the concentrations of the Eu<sup>2+</sup>, Mn<sup>2+</sup> and Al<sup>3+</sup> were 0.1mol, 0.1mol and 0.35mol respectively, the sample presented white emitting under excitation wavelength of 380 nm.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127724266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270976
J. Yi, L. An, X. Han, C. Liu, J. Chi, Y. Wen
Thiol-capped CdSe quantum dots are synthesized rapidly in aqueous solution assisted by microwave irradiation without any poisonous materials. The growth rate of quantum dots is greatly enhanced in this current microwave synthesis. The narrow size distribution (~30nm) of CdSe quantum dots is similar to the oil samples. The results indicate that the photoluminescence quality of quantum dots is improved effectively assisted by microwave irradiation compared to traditional aqueous solution. Room and low temperature photoluminescence is employed to investigate the excitonic emission from thiol-capped CdSe quantum dots between 83K and 300K. The photoluminescence peak position of CdSe quantum dots shift to shorter wavelengths. The relationship between the shift wavelengths and the temperature is linear. The slope for linear fitting curve is nearly constant in repeated experiment. This implies CdSe quantum dots may be applied in the low temperature nano-sensor. The photoluminescence intensity first enhances and then quench with decrease of temperature. The temperature dependence of the photoluminescence intensity is demonstrated through thermal escape and thermal rectification of surface trap states.
{"title":"Temperature Effect of Photoluminescence from Aqueous CdSe Quantum Dots","authors":"J. Yi, L. An, X. Han, C. Liu, J. Chi, Y. Wen","doi":"10.1109/SOPO.2012.6270976","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270976","url":null,"abstract":"Thiol-capped CdSe quantum dots are synthesized rapidly in aqueous solution assisted by microwave irradiation without any poisonous materials. The growth rate of quantum dots is greatly enhanced in this current microwave synthesis. The narrow size distribution (~30nm) of CdSe quantum dots is similar to the oil samples. The results indicate that the photoluminescence quality of quantum dots is improved effectively assisted by microwave irradiation compared to traditional aqueous solution. Room and low temperature photoluminescence is employed to investigate the excitonic emission from thiol-capped CdSe quantum dots between 83K and 300K. The photoluminescence peak position of CdSe quantum dots shift to shorter wavelengths. The relationship between the shift wavelengths and the temperature is linear. The slope for linear fitting curve is nearly constant in repeated experiment. This implies CdSe quantum dots may be applied in the low temperature nano-sensor. The photoluminescence intensity first enhances and then quench with decrease of temperature. The temperature dependence of the photoluminescence intensity is demonstrated through thermal escape and thermal rectification of surface trap states.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127606648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271035
Weisong Yi, Xianqing Luo
Raman spectroscopy with optical fibre probes, a kind of vibrational spectroscopy providing detailed information about molecular composition and structure of tissues. The great appeal of Raman spectroscopy lies in its potential for in vivo applications and its ability to therefore direct real-time therapeutic intervention. Objective: The purpose of this study was to discuss optical fibre probes for in vivo Raman Spectroscopy and its clinical implementation. Methods: Important progress of technology and application in medicine were introduced and summarized. Results: Raman spectroscopy equipment with optical fibre probes, meets important prerequisites for the development of tools for in vivo real time tissue analysis, during clinical procedures such as endoscope, biopsy, and surgery. Conclusion: In vivo diagnostic tools are much needed in many fields of medicine to take the sometimes unavoidable guesswork out of current clinical procedures, to avoid long delays caused by ex vivo evaluation of patient material, or to simply replace current invasive methods by noninvasive or less invasive techniques. In vivo Raman spectroscopy may fulfil a role in all of these fields.
{"title":"Progress and Application of Optical Fibre Probes for In Vivo Raman Spectroscopy","authors":"Weisong Yi, Xianqing Luo","doi":"10.1109/SOPO.2012.6271035","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271035","url":null,"abstract":"Raman spectroscopy with optical fibre probes, a kind of vibrational spectroscopy providing detailed information about molecular composition and structure of tissues. The great appeal of Raman spectroscopy lies in its potential for in vivo applications and its ability to therefore direct real-time therapeutic intervention. Objective: The purpose of this study was to discuss optical fibre probes for in vivo Raman Spectroscopy and its clinical implementation. Methods: Important progress of technology and application in medicine were introduced and summarized. Results: Raman spectroscopy equipment with optical fibre probes, meets important prerequisites for the development of tools for in vivo real time tissue analysis, during clinical procedures such as endoscope, biopsy, and surgery. Conclusion: In vivo diagnostic tools are much needed in many fields of medicine to take the sometimes unavoidable guesswork out of current clinical procedures, to avoid long delays caused by ex vivo evaluation of patient material, or to simply replace current invasive methods by noninvasive or less invasive techniques. In vivo Raman spectroscopy may fulfil a role in all of these fields.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127649782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271117
Munho Kim, Jung‐Hun Seo, Hongjun Yang, Jian Shi, Luke J. Mawst, Weidong Zhou, Xudong Wang, Z. Ma
This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5 × 103 was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.
{"title":"Fabrication and Characterization of Si/GaInP Heterojunction Photodetectors","authors":"Munho Kim, Jung‐Hun Seo, Hongjun Yang, Jian Shi, Luke J. Mawst, Weidong Zhou, Xudong Wang, Z. Ma","doi":"10.1109/SOPO.2012.6271117","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271117","url":null,"abstract":"This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5 × 103 was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132006981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270933
G. Wen, Shuang Wang, Yining Mu, Jingyi He
With the development of the wild Internet of things , Because of the many benefits of laser communications, laser communications network as Internet of things important means of optical networks has become an inevitable trend and urgent demand. This paper designed the 150mm optical main diameter, Laser divergence angle of 1mrad multipoint communication system. Mainly using the splitter splitting and frequency division multiplexing combined, through optical design and frequency shift keying binary method, The purpose is achieve that received the same optical signal of six channels at the same time.The laser communications systems for the internet of things development of a new device.
{"title":"The Optical Communication System of the Wild Internet of Things for One-to-Multi-Points","authors":"G. Wen, Shuang Wang, Yining Mu, Jingyi He","doi":"10.1109/SOPO.2012.6270933","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270933","url":null,"abstract":"With the development of the wild Internet of things , Because of the many benefits of laser communications, laser communications network as Internet of things important means of optical networks has become an inevitable trend and urgent demand. This paper designed the 150mm optical main diameter, Laser divergence angle of 1mrad multipoint communication system. Mainly using the splitter splitting and frequency division multiplexing combined, through optical design and frequency shift keying binary method, The purpose is achieve that received the same optical signal of six channels at the same time.The laser communications systems for the internet of things development of a new device.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134324752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270510
Wei Yu, Shengpeng Wan, B. Li, Lin Zhong, Wengang Hu, Wei Wang
Compare LM algorithm in reference to the iteration because of slow convergence speed,low convergence precision,poor stability,easy to get bad data influence each other about the Weighted Least Squares. This paper introduces the LM algorithm of based on Weighted Least Squares. The algorithm is applied to Brillouin scattering spectra information processing. The LM algorithm is the improvement algorithm of the Weighted Least Squares.This paper expounds the principle of Weighted Least Squares and LM algorithm . That introduces the LM algorithm of parameters adjustment method and its convergence judgement basis . Finally,the paper gives corresponding simulation results and analysis according to the examples . The LM algorithm has better convergence and stability comparing with the traditional Weighted Least Squares. The LM algorithm has rapid convergence and higher precision and saves time for measurement influence Brillouin scattering parameters.
{"title":"The LM Algorithm Research in Brillouin Scattering Spectra Information Based on the Weighted Least Squares","authors":"Wei Yu, Shengpeng Wan, B. Li, Lin Zhong, Wengang Hu, Wei Wang","doi":"10.1109/SOPO.2012.6270510","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270510","url":null,"abstract":"Compare LM algorithm in reference to the iteration because of slow convergence speed,low convergence precision,poor stability,easy to get bad data influence each other about the Weighted Least Squares. This paper introduces the LM algorithm of based on Weighted Least Squares. The algorithm is applied to Brillouin scattering spectra information processing. The LM algorithm is the improvement algorithm of the Weighted Least Squares.This paper expounds the principle of Weighted Least Squares and LM algorithm . That introduces the LM algorithm of parameters adjustment method and its convergence judgement basis . Finally,the paper gives corresponding simulation results and analysis according to the examples . The LM algorithm has better convergence and stability comparing with the traditional Weighted Least Squares. The LM algorithm has rapid convergence and higher precision and saves time for measurement influence Brillouin scattering parameters.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133016062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271084
Shoucai Yuan, Qi Zhang, Yamei Liu, Yi Zhang
In order to compare the performance differences of IGBTs/VDMOSFETs based on wide bandgap material 4H-SiC and silicon(Si), the basic theory of semiconductor physics for 4H-SiC and Si was used to describe the quantitative relationship of carrier mobility with doping concentration, output I-V curves with devices design and fabrication parameters, switching characteristics with material properties and devices rating voltage. MATLAB software was used to calculate those above characteristics, the calculation results show that, for given doping concentration, the carrier mobility of 4H-SiC is lower than that of silicon, so its conducting output currents are also smaller than that of silicon in the same design rule of same chip area and same devices terminal bias conditions, for example, when 4H-SiC and Si with same doping concentration of 1015cm-3 and same bias conditions of gate-source voltage 18V/drain-source voltage 2V, the carrier mobility and conducting current are 990.9cm2/V/s and 6.686mA for 4H-SiC, which is only about 74.4% and 55.9% that of silicon with value of 1332.0cm2/V/s and 11.950mA, respectively. However, for devices breakdown voltage of 4000V, the turn-on time for 4H-SiC, 27.88ns, is shorter than that of silicon, 110.30ns, this is because the wide bandgap material 4H-SiC will have higher epilayer doping concentration and thinner epilayer thickness when compared with silicon for given devices blocking voltage, this will lead the more fast turn-on and switching characteristics of 4H-SiC devices than that of Si devices.
{"title":"4H-SiC and Si Based IGBTs/VDMOSFETs Characters Comparison","authors":"Shoucai Yuan, Qi Zhang, Yamei Liu, Yi Zhang","doi":"10.1109/SOPO.2012.6271084","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271084","url":null,"abstract":"In order to compare the performance differences of IGBTs/VDMOSFETs based on wide bandgap material 4H-SiC and silicon(Si), the basic theory of semiconductor physics for 4H-SiC and Si was used to describe the quantitative relationship of carrier mobility with doping concentration, output I-V curves with devices design and fabrication parameters, switching characteristics with material properties and devices rating voltage. MATLAB software was used to calculate those above characteristics, the calculation results show that, for given doping concentration, the carrier mobility of 4H-SiC is lower than that of silicon, so its conducting output currents are also smaller than that of silicon in the same design rule of same chip area and same devices terminal bias conditions, for example, when 4H-SiC and Si with same doping concentration of 1015cm-3 and same bias conditions of gate-source voltage 18V/drain-source voltage 2V, the carrier mobility and conducting current are 990.9cm2/V/s and 6.686mA for 4H-SiC, which is only about 74.4% and 55.9% that of silicon with value of 1332.0cm2/V/s and 11.950mA, respectively. However, for devices breakdown voltage of 4000V, the turn-on time for 4H-SiC, 27.88ns, is shorter than that of silicon, 110.30ns, this is because the wide bandgap material 4H-SiC will have higher epilayer doping concentration and thinner epilayer thickness when compared with silicon for given devices blocking voltage, this will lead the more fast turn-on and switching characteristics of 4H-SiC devices than that of Si devices.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133870878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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