Pub Date : 2019-10-01DOI: 10.1117/1.JMM.18.4.044002
L. van Kessel, C. W. Hagen, P. Kruit
Abstract. Background: Monte Carlo simulations of scanning electron microscopy (SEM) images ignore most surface effects, such as surface plasmons. Previous experiments have shown that surface plasmons play an important role in the emission of secondary electrons (SEs). Aim: We investigate the influence of incorporating surface plasmons into simulations of low-voltage critical dimension SEM (CD-SEM). Approach: We use a modified inelastic scattering model, derived for infinite flat surfaces, and apply it to nonflat, but smooth, geometries. This simplification captures most qualitative effects, including both surface plasmons and a reduced interaction with bulk plasmons near interfaces. Results: We find that the SE signal hardly changes when surface interactions are turned on for a perpendicularly incident beam. When the incident beam is perfectly parallel to a surface, the SE signal does significantly increase. However, the beam must be extremely close to the surface for this effect to be appreciable. An SEM is unable to produce a beam that is both narrow and parallel enough to be noticeably affected. Conclusions: The position of edges may appear shifted under specific circumstances. In realistic situations, it is unlikely to be a large effect.
{"title":"Surface effects in simulations of scanning electron microscopy images","authors":"L. van Kessel, C. W. Hagen, P. Kruit","doi":"10.1117/1.JMM.18.4.044002","DOIUrl":"https://doi.org/10.1117/1.JMM.18.4.044002","url":null,"abstract":"Abstract. Background: Monte Carlo simulations of scanning electron microscopy (SEM) images ignore most surface effects, such as surface plasmons. Previous experiments have shown that surface plasmons play an important role in the emission of secondary electrons (SEs). Aim: We investigate the influence of incorporating surface plasmons into simulations of low-voltage critical dimension SEM (CD-SEM). Approach: We use a modified inelastic scattering model, derived for infinite flat surfaces, and apply it to nonflat, but smooth, geometries. This simplification captures most qualitative effects, including both surface plasmons and a reduced interaction with bulk plasmons near interfaces. Results: We find that the SE signal hardly changes when surface interactions are turned on for a perpendicularly incident beam. When the incident beam is perfectly parallel to a surface, the SE signal does significantly increase. However, the beam must be extremely close to the surface for this effect to be appreciable. An SEM is unable to produce a beam that is both narrow and parallel enough to be noticeably affected. Conclusions: The position of edges may appear shifted under specific circumstances. In realistic situations, it is unlikely to be a large effect.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"23 1","pages":"044002 - 044002"},"PeriodicalIF":2.3,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85521179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1117/1.JMM.18.4.040901
B. Lamontagne, N. Fong, In-Hyouk Song, Penghui Ma, P. Barrios, D. Poitras
Abstract. Background: Switchable glasses allow the control of light transmission—an attractive property for applications such as car sunroofs, aircraft windows, building windows, augmented reality, imaging, and displays. Commercialized switchable glasses have severe limitations, such as speed, cost, and operating conditions, among others. Microshutters, a type of switchable glass with very distinctive properties, are reviewed, as they are a technology that could significantly improve some or all of the shortcomings mentioned above. Aim: We will summarize the various types of microshutters and tentatively identify various critical designs, fabrication schemes, and performance criteria by the many research groups implementing them and investigating their properties. Approach: We will describe the various approaches used to control light transmission through microelectromechanical systems. It will compare their performances and comment on fabrication and implementation challenges. Conclusions: Microshutters have performance levels that could make them good candidates for switchable glasses. Many research groups have investigated various approaches to fabricate microshutters and have shown that they can be implemented reliably on a small scale, with fast actuation, low power, and high contrast and are relatively easy to manufacture. Work is needed to demonstrate that they can be scaled-up and still be economical to produce.
{"title":"Review of microshutters for switchable glass","authors":"B. Lamontagne, N. Fong, In-Hyouk Song, Penghui Ma, P. Barrios, D. Poitras","doi":"10.1117/1.JMM.18.4.040901","DOIUrl":"https://doi.org/10.1117/1.JMM.18.4.040901","url":null,"abstract":"Abstract. Background: Switchable glasses allow the control of light transmission—an attractive property for applications such as car sunroofs, aircraft windows, building windows, augmented reality, imaging, and displays. Commercialized switchable glasses have severe limitations, such as speed, cost, and operating conditions, among others. Microshutters, a type of switchable glass with very distinctive properties, are reviewed, as they are a technology that could significantly improve some or all of the shortcomings mentioned above. Aim: We will summarize the various types of microshutters and tentatively identify various critical designs, fabrication schemes, and performance criteria by the many research groups implementing them and investigating their properties. Approach: We will describe the various approaches used to control light transmission through microelectromechanical systems. It will compare their performances and comment on fabrication and implementation challenges. Conclusions: Microshutters have performance levels that could make them good candidates for switchable glasses. Many research groups have investigated various approaches to fabricate microshutters and have shown that they can be implemented reliably on a small scale, with fast actuation, low power, and high contrast and are relatively easy to manufacture. Work is needed to demonstrate that they can be scaled-up and still be economical to produce.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"18 1","pages":"040901 - 040901"},"PeriodicalIF":2.3,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84443533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1117/1.JMM.18.4.044003
K. Arat, T. Klimpel, C. W. Hagen
Abstract. Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. Aim: In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. Approach: The improvements include both modeling of low energy electron scattering by first-principle approaches and charging of insulators by the redistribution of the charge carriers in the material with an electron beam-induced conductivity and a dielectric breakdown model. Results: The first-principle scattering models provide a more realistic charge distribution cloud in the material and a better match between noncharging simulations and experimental results. The improvements on the charging models, which mainly focus on the redistribution of the charge carriers, lead to a smoother distribution of the charges and better experimental agreement of charging simulations. Conclusions: Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.
{"title":"Model improvements to simulate charging in scanning electron microscope","authors":"K. Arat, T. Klimpel, C. W. Hagen","doi":"10.1117/1.JMM.18.4.044003","DOIUrl":"https://doi.org/10.1117/1.JMM.18.4.044003","url":null,"abstract":"Abstract. Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. Aim: In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. Approach: The improvements include both modeling of low energy electron scattering by first-principle approaches and charging of insulators by the redistribution of the charge carriers in the material with an electron beam-induced conductivity and a dielectric breakdown model. Results: The first-principle scattering models provide a more realistic charge distribution cloud in the material and a better match between noncharging simulations and experimental results. The improvements on the charging models, which mainly focus on the redistribution of the charge carriers, lead to a smoother distribution of the charges and better experimental agreement of charging simulations. Conclusions: Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"96 1","pages":"044003 - 044003"},"PeriodicalIF":2.3,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86717094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1117/1.jmm.18.4.043506
Ying Chen, Yibo Lin, Lisong Dong, Tianyang Gai, Rui Chen, Yajuan Su, Yayi Wei, D. Pan
Abstract. An optimized source has the ability to improve the process window during lithography in semiconductor manufacturing. Source optimization is always a key technique to improve printing performance. Conventionally, source optimization relies on mathematical–physical model calibration, which is computationally expensive and extremely time-consuming. Machine learning could learn from existing data, construct a prediction model, and speed up the whole process. We propose the first source optimization process based on autoencoder neural networks. The goal of this autoencoder-based process is to increase the speed of the source optimization process with high-quality imaging results. We also make additional technical efforts to improve the performance of our work, including data augmentation and batch normalization. Experimental results demonstrate that our autoencoder-based source optimization achieves about 105 × speed up with 4.67% compromise on depth of focus (DOF), when compared to conventional model-based source optimization method.
{"title":"SoulNet: ultrafast optical source optimization utilizing generative neural networks for advanced lithography","authors":"Ying Chen, Yibo Lin, Lisong Dong, Tianyang Gai, Rui Chen, Yajuan Su, Yayi Wei, D. Pan","doi":"10.1117/1.jmm.18.4.043506","DOIUrl":"https://doi.org/10.1117/1.jmm.18.4.043506","url":null,"abstract":"Abstract. An optimized source has the ability to improve the process window during lithography in semiconductor manufacturing. Source optimization is always a key technique to improve printing performance. Conventionally, source optimization relies on mathematical–physical model calibration, which is computationally expensive and extremely time-consuming. Machine learning could learn from existing data, construct a prediction model, and speed up the whole process. We propose the first source optimization process based on autoencoder neural networks. The goal of this autoencoder-based process is to increase the speed of the source optimization process with high-quality imaging results. We also make additional technical efforts to improve the performance of our work, including data augmentation and batch normalization. Experimental results demonstrate that our autoencoder-based source optimization achieves about 105 × speed up with 4.67% compromise on depth of focus (DOF), when compared to conventional model-based source optimization method.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"37 1","pages":"043506 - 043506"},"PeriodicalIF":2.3,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86842607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1117/1.JMM.18.4.043501
Kenneth C. Johnson
Abstract. Background: The resolution capability of EUV lithography has reached parity with e-beam, raising the possibility that maskless EUV could supplant e-beam for mask writing and low-volume wafer patterning. Aim: We outline a maskless EUV scanner design with a 13.5-nm operating wavelength and numerical aperture of 0.55. Approach: A microlens array partitions radiation from a commercial laser-produced plasma EUV source into ∼2 million individual beams, which are focused to separate, diffraction-limited focal points on a writing surface, and the surface is raster-scanned across the focal point array as the beams are individually modulated by MEMS microshutters integrated within the microlens array to construct a digitally synthesized raster exposure image. Results: Compared to state-of-the-art mask-projection EUV lithography, the system would have ∼1000 × lower throughput, but its power requirement would also be ∼1000 × lower, the exposure dose would be ∼10 × higher, scan velocity and acceleration would be ∼1000 × lower, and it would have the advantage of maskless operation. In comparison to e-beam mask writers, a maskless EUV scanner could provide higher resolution with at least double the throughput and over 10 × higher dose. Conclusions: Maskless EUV lithography could provide significant cost and performance benefits for both direct-write applications and photomask production for mask-projection lithography.
{"title":"Maskless EUV lithography, an alternative to e-beam","authors":"Kenneth C. Johnson","doi":"10.1117/1.JMM.18.4.043501","DOIUrl":"https://doi.org/10.1117/1.JMM.18.4.043501","url":null,"abstract":"Abstract. Background: The resolution capability of EUV lithography has reached parity with e-beam, raising the possibility that maskless EUV could supplant e-beam for mask writing and low-volume wafer patterning. Aim: We outline a maskless EUV scanner design with a 13.5-nm operating wavelength and numerical aperture of 0.55. Approach: A microlens array partitions radiation from a commercial laser-produced plasma EUV source into ∼2 million individual beams, which are focused to separate, diffraction-limited focal points on a writing surface, and the surface is raster-scanned across the focal point array as the beams are individually modulated by MEMS microshutters integrated within the microlens array to construct a digitally synthesized raster exposure image. Results: Compared to state-of-the-art mask-projection EUV lithography, the system would have ∼1000 × lower throughput, but its power requirement would also be ∼1000 × lower, the exposure dose would be ∼10 × higher, scan velocity and acceleration would be ∼1000 × lower, and it would have the advantage of maskless operation. In comparison to e-beam mask writers, a maskless EUV scanner could provide higher resolution with at least double the throughput and over 10 × higher dose. Conclusions: Maskless EUV lithography could provide significant cost and performance benefits for both direct-write applications and photomask production for mask-projection lithography.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"1 1","pages":"043501 - 043501"},"PeriodicalIF":2.3,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89805474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-18DOI: 10.1117/1.JMM.18.3.034004
D. Bizen, S. Mizutani, M. Sakakibara, Makoto Suzuki, Yoshinori Momonoi
Abstract. Background: Extreme ultraviolet (EUV) lithography was introduced for the high-volume manufacturing of state-of-the-art semiconductor devices in 2019. One of the issues for the CD metrology of an EUV resist pattern is the resist shrinkage since the ratio of the shrinkage to the CD increases in EUV lithography compared with that in immersion argon fluoride lithography. Aim: A CD-SEM metrology for an EUV resist that was compatible with low shrinkage and high spatial resolution was investigated by using primary electrons (PEs) with high energy. Approach: The shrinkage, image sharpness, repeatability, and line edge roughness (LER) were evaluated for the EUV resist using PEs with energies of 200, 800, and 4000 eV. Results: The smallest shrinkage was obtained under the conditions of the repeatability from 0.15 to 0.22 nm by using PEs with an energy of 4000 eV. Moreover, the LERs obtained for 200, 800, and 4000 eV were almost the same. Conclusions: While the electron irradiation damage for an under layer and the amount of shrinkage depending on pattern size could cause issues, the high voltage CD-SEM provides a solution to CD monitoring in high-volume manufacturing using EUV lithography.
{"title":"CD metrology for EUV resist using high-voltage CD-SEM: shrinkage, image sharpness, repeatability, and line edge roughness","authors":"D. Bizen, S. Mizutani, M. Sakakibara, Makoto Suzuki, Yoshinori Momonoi","doi":"10.1117/1.JMM.18.3.034004","DOIUrl":"https://doi.org/10.1117/1.JMM.18.3.034004","url":null,"abstract":"Abstract. Background: Extreme ultraviolet (EUV) lithography was introduced for the high-volume manufacturing of state-of-the-art semiconductor devices in 2019. One of the issues for the CD metrology of an EUV resist pattern is the resist shrinkage since the ratio of the shrinkage to the CD increases in EUV lithography compared with that in immersion argon fluoride lithography. Aim: A CD-SEM metrology for an EUV resist that was compatible with low shrinkage and high spatial resolution was investigated by using primary electrons (PEs) with high energy. Approach: The shrinkage, image sharpness, repeatability, and line edge roughness (LER) were evaluated for the EUV resist using PEs with energies of 200, 800, and 4000 eV. Results: The smallest shrinkage was obtained under the conditions of the repeatability from 0.15 to 0.22 nm by using PEs with an energy of 4000 eV. Moreover, the LERs obtained for 200, 800, and 4000 eV were almost the same. Conclusions: While the electron irradiation damage for an under layer and the amount of shrinkage depending on pattern size could cause issues, the high voltage CD-SEM provides a solution to CD monitoring in high-volume manufacturing using EUV lithography.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"5 1","pages":"034004 - 034004"},"PeriodicalIF":2.3,"publicationDate":"2019-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89704510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-13DOI: 10.1117/1.JMM.18.3.033503
S. Iida, T. Nagai, T. Uchiyama
Abstract. Background: Continued shrinkage of pattern size has caused difficulties in detecting small defects. Multibeam scanning electron microscopy (SEM) is a potential method for pattern inspection below 7-nm node. Performance of the tool depends on charge control, resolution, and defect detection capability. Aim: The goal of this study is to develop a method for evaluating the performance of multibeam SEM for 7-nm nodes. Approach: By developing various standard samples with programmed defects (PDs) on 12 in. Si wafer, we evaluate the performance of multibeam SEM. Results: The first wafer had line and space (LS) patterns and PDs with varying contrast. A second wafer had various shaped small PDs, ∼5 nm in size in 16- to 12-nm half-pitch LS patterns. A third wafer with extremely small PDs of around 1 nm was fabricated in LS patterns with ultralow line-edge roughness (LER) of less than 1 nm. The first wafer was effective for charge control, whereas second and third wafer confirms resolution and defect detection capability. Conclusions: A set of minimum three standard wafer samples is effective to confirm the performance of multibeam SEM for below 7-nm nodes. Besides, we proposed a method to verify the LER values measured by a critical-dimension SEM.
{"title":"Development of standard samples with programmed defects for evaluation of pattern inspection tools for 7-nm and smaller nodes","authors":"S. Iida, T. Nagai, T. Uchiyama","doi":"10.1117/1.JMM.18.3.033503","DOIUrl":"https://doi.org/10.1117/1.JMM.18.3.033503","url":null,"abstract":"Abstract. Background: Continued shrinkage of pattern size has caused difficulties in detecting small defects. Multibeam scanning electron microscopy (SEM) is a potential method for pattern inspection below 7-nm node. Performance of the tool depends on charge control, resolution, and defect detection capability. Aim: The goal of this study is to develop a method for evaluating the performance of multibeam SEM for 7-nm nodes. Approach: By developing various standard samples with programmed defects (PDs) on 12 in. Si wafer, we evaluate the performance of multibeam SEM. Results: The first wafer had line and space (LS) patterns and PDs with varying contrast. A second wafer had various shaped small PDs, ∼5 nm in size in 16- to 12-nm half-pitch LS patterns. A third wafer with extremely small PDs of around 1 nm was fabricated in LS patterns with ultralow line-edge roughness (LER) of less than 1 nm. The first wafer was effective for charge control, whereas second and third wafer confirms resolution and defect detection capability. Conclusions: A set of minimum three standard wafer samples is effective to confirm the performance of multibeam SEM for below 7-nm nodes. Besides, we proposed a method to verify the LER values measured by a critical-dimension SEM.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"14 1","pages":"033503 - 033503"},"PeriodicalIF":2.3,"publicationDate":"2019-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83673624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-13DOI: 10.1117/1.JMM.18.3.033502
Xisen Hou, Mingqi Li, M. Eller, S. Verkhoturov, E. Schweikert, P. Trefonas
Abstract. Background: The homogeneity of photoacid generator (PAG) is a critical factor influencing the resolving capability and the sidewall roughness of a photoresist, yet fundamental understanding of the PAG homogeneity lacks at the nanoscale. Aim: We present a methodology, massive cluster secondary ion mass spectrometry (MC-SIMS), to determine PAG homogeneity on a 10- to 15-nm scale at the photoresist film surface. Approach: MC-SIMS bombards the sample with a sequence of massive Au400 + 4 nanoprojectiles, each separated in time and space, collecting and mass analyzing the coemitted secondary ions from each impact. Each sample is analyzed with one million individual projectile impacts. Analysis of coemission of these independent more than one million mass spectra allows for identification of colocalized molecules within nanodomains ∼10- to 15-nm diameter and ∼10 nm in depth from the film surface, therefore revealing spatial molecular distributions at the nanoscale. Results: About 85% to 95% of the measurements showed PAG–PAG coemission and over 90% showed polymer–PAG coemission. Ion-exchanging additive increases polymer–PAG coemission. Conclusions: The majority of PAG molecules exist as small aggregates that are <10 nm in size and such aggregates are highly homogeneously distributed within the polymer matrix. The size of the PAG aggregates can be manipulated by additives through an ion-exchange mechanism.
{"title":"Understanding photoacid generator distribution at the nanoscale using massive cluster secondary ion mass spectrometry","authors":"Xisen Hou, Mingqi Li, M. Eller, S. Verkhoturov, E. Schweikert, P. Trefonas","doi":"10.1117/1.JMM.18.3.033502","DOIUrl":"https://doi.org/10.1117/1.JMM.18.3.033502","url":null,"abstract":"Abstract. Background: The homogeneity of photoacid generator (PAG) is a critical factor influencing the resolving capability and the sidewall roughness of a photoresist, yet fundamental understanding of the PAG homogeneity lacks at the nanoscale. Aim: We present a methodology, massive cluster secondary ion mass spectrometry (MC-SIMS), to determine PAG homogeneity on a 10- to 15-nm scale at the photoresist film surface. Approach: MC-SIMS bombards the sample with a sequence of massive Au400 + 4 nanoprojectiles, each separated in time and space, collecting and mass analyzing the coemitted secondary ions from each impact. Each sample is analyzed with one million individual projectile impacts. Analysis of coemission of these independent more than one million mass spectra allows for identification of colocalized molecules within nanodomains ∼10- to 15-nm diameter and ∼10 nm in depth from the film surface, therefore revealing spatial molecular distributions at the nanoscale. Results: About 85% to 95% of the measurements showed PAG–PAG coemission and over 90% showed polymer–PAG coemission. Ion-exchanging additive increases polymer–PAG coemission. Conclusions: The majority of PAG molecules exist as small aggregates that are <10 nm in size and such aggregates are highly homogeneously distributed within the polymer matrix. The size of the PAG aggregates can be manipulated by additives through an ion-exchange mechanism.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"1 1","pages":"033502 - 033502"},"PeriodicalIF":2.3,"publicationDate":"2019-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75336704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.1117/1.JMM.18.3.034003
Tsung-Fu Yao, Liam G. Connolly, M. Cullinan
Abstract. Effective measurement of fabricated structures is critical to the cost-effective production of modern electronics. However, traditional tip-based approaches are poorly suited to in-line inspection at current manufacturing speeds. We present the development of a large area inspection method to address throughput constraints due to the narrow field-of-view (FOV) inherent in conventional tip-based measurement. The proposed proof-of-concept system can perform simultaneous, noncontact inspection at multiple hotspots using single-chip atomic force microscopes (sc-AFMs) with nanometer-scale resolution. The tool has a throughput of ∼60 wafers / h for five-site measurement on a 4-in. wafer, corresponding to a nanometrology throughput of ∼66,000 μm2 / h. This methodology can be used to not only locate subwavelength “killer” defects but also to measure topography for in-line process control. Further, a postprocessing workflow is developed to stitch together adjacent scans measured in a serial fashion and expand the FOV of each individual sc-AFM such that total inspection area per cycle can be balanced with throughput to perform larger area inspection for uses such as defect root-cause analysis.
{"title":"Expanded area metrology for tip-based wafer inspection in the nanomanufacturing of electronic devices","authors":"Tsung-Fu Yao, Liam G. Connolly, M. Cullinan","doi":"10.1117/1.JMM.18.3.034003","DOIUrl":"https://doi.org/10.1117/1.JMM.18.3.034003","url":null,"abstract":"Abstract. Effective measurement of fabricated structures is critical to the cost-effective production of modern electronics. However, traditional tip-based approaches are poorly suited to in-line inspection at current manufacturing speeds. We present the development of a large area inspection method to address throughput constraints due to the narrow field-of-view (FOV) inherent in conventional tip-based measurement. The proposed proof-of-concept system can perform simultaneous, noncontact inspection at multiple hotspots using single-chip atomic force microscopes (sc-AFMs) with nanometer-scale resolution. The tool has a throughput of ∼60 wafers / h for five-site measurement on a 4-in. wafer, corresponding to a nanometrology throughput of ∼66,000 μm2 / h. This methodology can be used to not only locate subwavelength “killer” defects but also to measure topography for in-line process control. Further, a postprocessing workflow is developed to stitch together adjacent scans measured in a serial fashion and expand the FOV of each individual sc-AFM such that total inspection area per cycle can be balanced with throughput to perform larger area inspection for uses such as defect root-cause analysis.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"8 1","pages":"034003 - 034003"},"PeriodicalIF":2.3,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85344457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-27DOI: 10.1117/1.JMM.18.3.034002
Lituo Liu, Guannan Li, Weihu Zhou, Xiaobin Wu, Yu Wang
Abstract. The contamination control of silicon wafer surface is more and more strict. Many investigations have been done to inspect defects on silicon wafer. However, rare studies have been reported on defect component inspection, which is also critical to trace the source of defects and monitor manufacturing processes in time. In order to inspect the components of contaminated particles on silicon wafer, especially with a high-speed, in-line mode and negligible damage, a dual nanosecond pulse laser system with both wavelengths at 532 nm is designed, in which one laser pumps the particles away from the wafer surface with negligible damage, the other laser breaks down the particles in the air above the wafer surface to obtain the emission lines of the contaminated particles by a spectroscopy with intensified charge coupled device. The sensitivity of the dual pulse laser system is evaluated. The particle dynamic process after pump is analyzed. The results in this work provide a potential on-line method for the semiconductor industry to trace the sources of defects during the manufacture process.
{"title":"Potential use of laser-induced breakdown spectroscopy combined laser cleaning for inspection of particle defect components on silicon wafer","authors":"Lituo Liu, Guannan Li, Weihu Zhou, Xiaobin Wu, Yu Wang","doi":"10.1117/1.JMM.18.3.034002","DOIUrl":"https://doi.org/10.1117/1.JMM.18.3.034002","url":null,"abstract":"Abstract. The contamination control of silicon wafer surface is more and more strict. Many investigations have been done to inspect defects on silicon wafer. However, rare studies have been reported on defect component inspection, which is also critical to trace the source of defects and monitor manufacturing processes in time. In order to inspect the components of contaminated particles on silicon wafer, especially with a high-speed, in-line mode and negligible damage, a dual nanosecond pulse laser system with both wavelengths at 532 nm is designed, in which one laser pumps the particles away from the wafer surface with negligible damage, the other laser breaks down the particles in the air above the wafer surface to obtain the emission lines of the contaminated particles by a spectroscopy with intensified charge coupled device. The sensitivity of the dual pulse laser system is evaluated. The particle dynamic process after pump is analyzed. The results in this work provide a potential on-line method for the semiconductor industry to trace the sources of defects during the manufacture process.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"17 1","pages":"034002 - 034002"},"PeriodicalIF":2.3,"publicationDate":"2019-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81940732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：