Pub Date : 2025-12-29DOI: 10.1016/j.jsamd.2025.101095
Jianlei Chen , Tianruo Zhang , Yun Zhou , Yong Xu
In this study, a highly sensitive electrochemical sensor was developed for the detection of nitrofurazone (NFZ) in seawater using a glassy carbon electrode modified with a nanocomposite of MXene and graphene (Gr). The synergistic effect of MXene and Gr significantly enhanced the electron transfer rate and active surface area of the electrode. Key parameters, including modifier volume, activation cycles, and solution pH, were optimized to achieve optimal sensor performance. Under the optimized conditions, the sensor exhibited a wide linear detection range from 1 to 70 μmol/L. The sensor also demonstrated excellent repeatability, stability, and selectivity against common antibiotic interferents. When applied to spiked seawater samples, recovery rates ranged from 96.01 % to 102.16 % with a relative standard deviation below 1.3 %. The MXene–Gr-based sensor not only provides a reliable tool for on-site monitoring of antibiotic residues in marine environments but also demonstrates the great potential of MXene-based composites in the development of advanced electrochemical biosensing platforms for environmental and food safety applications.
{"title":"Electrochemical sensor based on MXene-Gr for highly sensitive detection of nitrofurazone in seawater","authors":"Jianlei Chen , Tianruo Zhang , Yun Zhou , Yong Xu","doi":"10.1016/j.jsamd.2025.101095","DOIUrl":"10.1016/j.jsamd.2025.101095","url":null,"abstract":"<div><div>In this study, a highly sensitive electrochemical sensor was developed for the detection of nitrofurazone (NFZ) in seawater using a glassy carbon electrode modified with a nanocomposite of MXene and graphene (Gr). The synergistic effect of MXene and Gr significantly enhanced the electron transfer rate and active surface area of the electrode. Key parameters, including modifier volume, activation cycles, and solution pH, were optimized to achieve optimal sensor performance. Under the optimized conditions, the sensor exhibited a wide linear detection range from 1 to 70 μmol/L. The sensor also demonstrated excellent repeatability, stability, and selectivity against common antibiotic interferents. When applied to spiked seawater samples, recovery rates ranged from 96.01 % to 102.16 % with a relative standard deviation below 1.3 %. The MXene–Gr-based sensor not only provides a reliable tool for on-site monitoring of antibiotic residues in marine environments but also demonstrates the great potential of MXene-based composites in the development of advanced electrochemical biosensing platforms for environmental and food safety applications.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101095"},"PeriodicalIF":6.8,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-29DOI: 10.1016/j.jsamd.2025.101094
Fazliyana ‘Izzati Za'abar , Camellia Doroody , Puvaneswaran Chelvanathan , Ahmad Wafi Mahmood Zuhdi , Mohd Shaparuddin Bahrudin , Hua Ye , Zheng-Jie Feng , Mohd Hadri Hafiz Mokhtar
Chalcopyrite Cu(In,Ga)Se2 or CIGSe solar cells (SCs) have demonstrated significant potential in thin film (TF) photovoltaic technologies, achieving record solar cell efficiencies of 23.6 % and commercial solar modules with efficiencies of 19.2 %. Despite these high-efficiency levels, the full potential of CIGSe-based PV technology has not yet been realized, as it is limited by losses related to optics, parasitics, and recombination. This work examines the effects of heat treatment on the electrical and microstructural properties of Mo TFs sputtered by DC, which are crucial as the back-contact layer in CIGSe SCs. Substrate heating and in-situ annealing are suggested during the DC sputtering of Mo TFs, and the results demonstrate a significant improvement in TF crystallinity, minimisation of microstrain, and decreased dislocation density, particularly in the (110) crystal orientation, which enhances electrical resistivity. In contrast to predicted behaviour, films annealed at 500 °C showed unexpectedly lengthy, fibrous grain structures with porosity. Findings here emphasize the significance of heat during and after the deposition process to improve the Mo film microstructure, which influences the electrical performance and interfacial properties of the back-contact layer in CIGSe SCs. Optimizing the microstructural growth of Mo films is essential to raising the stability and efficiency of CIGSE-based solar systems.
{"title":"Role of in-situ substrate heating and selenium-free annealing on the growth of MoSe2 interlayer in sputtered Cu(In,Ga)Se2 solar cells","authors":"Fazliyana ‘Izzati Za'abar , Camellia Doroody , Puvaneswaran Chelvanathan , Ahmad Wafi Mahmood Zuhdi , Mohd Shaparuddin Bahrudin , Hua Ye , Zheng-Jie Feng , Mohd Hadri Hafiz Mokhtar","doi":"10.1016/j.jsamd.2025.101094","DOIUrl":"10.1016/j.jsamd.2025.101094","url":null,"abstract":"<div><div>Chalcopyrite Cu(In,Ga)Se<sub>2</sub> or CIGSe solar cells (SCs) have demonstrated significant potential in thin film (TF) photovoltaic technologies, achieving record solar cell efficiencies of 23.6 % and commercial solar modules with efficiencies of 19.2 %. Despite these high-efficiency levels, the full potential of CIGSe-based PV technology has not yet been realized, as it is limited by losses related to optics, parasitics, and recombination. This work examines the effects of heat treatment on the electrical and microstructural properties of Mo TFs sputtered by DC, which are crucial as the back-contact layer in CIGSe SCs. Substrate heating and in-situ annealing are suggested during the DC sputtering of Mo TFs, and the results demonstrate a significant improvement in TF crystallinity, minimisation of microstrain, and decreased dislocation density, particularly in the (110) crystal orientation, which enhances electrical resistivity. In contrast to predicted behaviour, films annealed at 500 °C showed unexpectedly lengthy, fibrous grain structures with porosity. Findings here emphasize the significance of heat during and after the deposition process to improve the Mo film microstructure, which influences the electrical performance and interfacial properties of the back-contact layer in CIGSe SCs. Optimizing the microstructural growth of Mo films is essential to raising the stability and efficiency of CIGSE-based solar systems.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101094"},"PeriodicalIF":6.8,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145881048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-26DOI: 10.1016/j.jsamd.2025.101089
Xuening Jiang , Xinyu Zhu , Yige He , Xin Wang , Yu Gu , Qingzheng Wang , Lixia Yang , YuanJia Cao , Jiale Liang , Chaofeng Sang , Lei Jiang
MXene is a promising electrode material for micro-supercapacitors (MSCs), but its tendency to stack layers hinders electrolyte ion accessibility and impairs charge storage performance. We address this through ice-bath sonication of Ti3C2Tx MXene dispersion, creating a microstructure with expanded interlayer spacing, increased porosity, reduced dimensions with enhanced interface density and active areas, while preserving high electrical conductivity. The resulting MXene-MSC demonstrates superior charge storage performance over its pristine counterpart: 61.3 % higher capacitance (91.8 mF/cm2 at 5 mV/s), 1.5 times improved rate performance, and 4.2-fold higher energy density, without sacrificing long-term cycling stability. The mechanistic origin of the performance improvement was revealed via electrochemical impedance spectroscopy (EIS) analysis, which demonstrated significantly enhanced ionic diffusion kinetics and faster frequency response. These enhancements are directly ascribed to sonication-induced favorable microstructural features in MXene electrodes, which improve electrolyte accessibility and create optimized ion transport pathways with reduced length and increased efficiency. This work offers new insights into balancing electrical conductivity and ion transportation for high-performance supercapacitors.
{"title":"Sonication-induced microstructural modification of MXene for enhanced supercapacitor performance: Electrochemical characterization and mechanistic insights","authors":"Xuening Jiang , Xinyu Zhu , Yige He , Xin Wang , Yu Gu , Qingzheng Wang , Lixia Yang , YuanJia Cao , Jiale Liang , Chaofeng Sang , Lei Jiang","doi":"10.1016/j.jsamd.2025.101089","DOIUrl":"10.1016/j.jsamd.2025.101089","url":null,"abstract":"<div><div>MXene is a promising electrode material for micro-supercapacitors (MSCs), but its tendency to stack layers hinders electrolyte ion accessibility and impairs charge storage performance. We address this through ice-bath sonication of Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene dispersion, creating a microstructure with expanded interlayer spacing, increased porosity, reduced dimensions with enhanced interface density and active areas, while preserving high electrical conductivity. The resulting MXene-MSC demonstrates superior charge storage performance over its pristine counterpart: 61.3 % higher capacitance (91.8 mF/cm<sup>2</sup> at 5 mV/s), 1.5 times improved rate performance, and 4.2-fold higher energy density, without sacrificing long-term cycling stability. The mechanistic origin of the performance improvement was revealed via electrochemical impedance spectroscopy (EIS) analysis, which demonstrated significantly enhanced ionic diffusion kinetics and faster frequency response. These enhancements are directly ascribed to sonication-induced favorable microstructural features in MXene electrodes, which improve electrolyte accessibility and create optimized ion transport pathways with reduced length and increased efficiency. This work offers new insights into balancing electrical conductivity and ion transportation for high-performance supercapacitors.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101089"},"PeriodicalIF":6.8,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-24DOI: 10.1016/j.jsamd.2025.101088
Bahia Messai , Rachid Makhloufi , Ahcen Keziz , Chaima Benbrika , Mourad Nouiri , Ali Ismael , Taha Abdel Mohaymen Taha
Lead zirconate titanate (PZT) ceramics remain central to high-performance piezoelectric and dielectric technologies. In this work, (Pb1-xSrx[(Zr0.52Ti0.43)(Al0.5Sb0.5)0.05]O3 (PZT-SAS) ceramics with SrO substitution levels x = 0.02, 0.04, 0.06, and 0.08 were synthesized via the solid-state reaction route to investigate the structural, microstructural, and dielectric responses arising from coupled Sr2+, Al3+/Sb5+ amphoteric co-doping. X-ray diffraction (XRD) analysis confirmed mixed tetragonal–rhombohedral phase coexistence across all compositions. Deconvolution of the (002)T/(200)T/(202)R reflections in the 42°–47° range showed systematic evolution of phase fractions, where the tetragonal content increased from ∼38 % at x = 0.02–∼57 % at x = 0.08. Fourier-transform infrared (FTIR) spectra exhibited a dominant M − O vibrational band at 530.5 cm−1, characteristic of BO6 octahedral bonding in perovskites. Microstructural analysis revealed significant grain coarsening with Sr addition: average grain size increased from ∼1.8 μm (x = 0.02) to ∼4.6 μm (x = 0.08), accompanied by improved densification, where the bulk density rose from 5.26 g/cm3 to 6.12 g/cm3. Impedance spectroscopy showed typical NTCR behavior, with decreasing Z′ and Z″ across 600–700 K, and Nyquist plots exhibited single depressed semicircles indicative of non-Debye relaxation dominated by grain and grain-boundary contributions. Increasing Sr content reduced grain-boundary resistance and shifted relaxation peaks toward higher frequencies. AC conductivity followed Jonscher's power law, showing a low-frequency σdc plateau and a high-frequency dispersion region attributed to hopping conduction of localized charge carriers. These findings demonstrate that Sr/PZT-SAS ceramics offer a promising pathway for developing high-performance dielectric materials with controlled phase composition, low loss, and improved conductivity behavior.
{"title":"Strontium-induced phase transition and dielectric relaxation in PZT-AlSb ceramics","authors":"Bahia Messai , Rachid Makhloufi , Ahcen Keziz , Chaima Benbrika , Mourad Nouiri , Ali Ismael , Taha Abdel Mohaymen Taha","doi":"10.1016/j.jsamd.2025.101088","DOIUrl":"10.1016/j.jsamd.2025.101088","url":null,"abstract":"<div><div>Lead zirconate titanate (PZT) ceramics remain central to high-performance piezoelectric and dielectric technologies. In this work, (Pb<sub>1-x</sub>Sr<sub>x</sub>[(Zr<sub>0.52</sub>Ti<sub>0.43</sub>)(Al<sub>0.5</sub>Sb<sub>0.5</sub>)<sub>0.05</sub>]O<sub>3</sub> (PZT-SAS) ceramics with SrO substitution levels x = 0.02, 0.04, 0.06, and 0.08 were synthesized via the solid-state reaction route to investigate the structural, microstructural, and dielectric responses arising from coupled Sr<sup>2+</sup>, Al<sup>3+</sup>/Sb<sup>5+</sup> amphoteric co-doping. X-ray diffraction (XRD) analysis confirmed mixed tetragonal–rhombohedral phase coexistence across all compositions. Deconvolution of the (002)T/(200)T/(202)R reflections in the 42°–47° range showed systematic evolution of phase fractions, where the tetragonal content increased from ∼38 % at x = 0.02–∼57 % at x = 0.08. Fourier-transform infrared (FTIR) spectra exhibited a dominant M − O vibrational band at 530.5 cm<sup>−1</sup>, characteristic of BO<sub>6</sub> octahedral bonding in perovskites. Microstructural analysis revealed significant grain coarsening with Sr addition: average grain size increased from ∼1.8 μm (x = 0.02) to ∼4.6 μm (x = 0.08), accompanied by improved densification, where the bulk density rose from 5.26 g/cm<sup>3</sup> to 6.12 g/cm<sup>3</sup>. Impedance spectroscopy showed typical NTCR behavior, with decreasing Z′ and Z″ across 600–700 K, and Nyquist plots exhibited single depressed semicircles indicative of non-Debye relaxation dominated by grain and grain-boundary contributions. Increasing Sr content reduced grain-boundary resistance and shifted relaxation peaks toward higher frequencies. AC conductivity followed Jonscher's power law, showing a low-frequency σ<sub>dc</sub> plateau and a high-frequency dispersion region attributed to hopping conduction of localized charge carriers. These findings demonstrate that Sr/PZT-SAS ceramics offer a promising pathway for developing high-performance dielectric materials with controlled phase composition, low loss, and improved conductivity behavior.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101088"},"PeriodicalIF":6.8,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-19DOI: 10.1016/j.jsamd.2025.101085
Aseel j. Mohammed , Wala Dizayee , Ismail Ibrahim Marhoon , Mohammed Ahmed Mohammed , Mohammed Zorah , Zainab Shaker Matar Al-Husseini , Mohamed Shabbir Abdulnabi , G. Abdulkareem-Alsultan , Maadh Fawzi Nassar
Lead-free tin halide perovskites constitute a nontoxic alternative to lead-based solar absorbers, but their development is stifled by low performance and material instability, attributed primarily to Sn2+ oxidation, high levels of defects, and slow charge transfer. We demonstrate glycine-functionalized Ti3C2Tx MXene (MXG) as a multifunctional additive in FASnI3 perovskite films. The amino groups on MXG have a two-fold role in that they chemically passivate the under-coordinated Sn sites and iodine vacancies, while at the same time providing moderate reductants to suppress Sn2+ oxidation. Aside from passivation, the MXene with layered conductive properties also acts as a favorable template for perovskite crystallization, allowing the vertical grain orientation for better light absorption into the absorber layer, improveing interfacial connection between layers and charge carrier transfer/extraction. For the MXG devices, better film quality and reduced trap state density and carrier lifetime with enhanced energy level alignment were observed. The champion MXG/FASnI3 device shows a power conversion efficiency of 15.82 % with improved stability (maintaining over 94 % of its initial efficiency after 1000 h). This investigation highlights the dual electrical and structural benefits of MXene engineering toward achieving earth‐abundant, efficient, stable, and scalable Sn perovskite PVs.
{"title":"Glycine-functionalized Ti3C2Tx MXene with improved material properties for concurrent Sn2+ oxidation mitigation and defect passivation in efficient tin halide perovskite solar cells","authors":"Aseel j. Mohammed , Wala Dizayee , Ismail Ibrahim Marhoon , Mohammed Ahmed Mohammed , Mohammed Zorah , Zainab Shaker Matar Al-Husseini , Mohamed Shabbir Abdulnabi , G. Abdulkareem-Alsultan , Maadh Fawzi Nassar","doi":"10.1016/j.jsamd.2025.101085","DOIUrl":"10.1016/j.jsamd.2025.101085","url":null,"abstract":"<div><div>Lead-free tin halide perovskites constitute a nontoxic alternative to lead-based solar absorbers, but their development is stifled by low performance and material instability, attributed primarily to Sn<sup>2+</sup> oxidation, high levels of defects, and slow charge transfer. We demonstrate glycine-functionalized Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene (MXG) as a multifunctional additive in FASnI<sub>3</sub> perovskite films. The amino groups on MXG have a two-fold role in that they chemically passivate the under-coordinated Sn sites and iodine vacancies, while at the same time providing moderate reductants to suppress Sn<sup>2+</sup> oxidation. Aside from passivation, the MXene with layered conductive properties also acts as a favorable template for perovskite crystallization, allowing the vertical grain orientation for better light absorption into the absorber layer, improveing interfacial connection between layers and charge carrier transfer/extraction. For the MXG devices, better film quality and reduced trap state density and carrier lifetime with enhanced energy level alignment were observed. The champion MXG/FASnI<sub>3</sub> device shows a power conversion efficiency of 15.82 % with improved stability (maintaining over 94 % of its initial efficiency after 1000 h). This investigation highlights the dual electrical and structural benefits of MXene engineering toward achieving earth‐abundant, efficient, stable, and scalable Sn perovskite PVs.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101085"},"PeriodicalIF":6.8,"publicationDate":"2025-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145837500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1016/j.jsamd.2025.101084
Suneyana Rawat , Ram Chandra Singh , Monika Michalska , Serguei V. Savilov , Markus Diantoro , Pramod K. Singh
In the realm of green and sustainable energy use, solid electrolytes are recognized for their environmentally friendly and degradable properties. Simultaneously, significant efforts have been made to improve the ionic transport and interfacial stability of polymer electrolytes to facilitate the development of electrochemical devices. In this context, the influence of the phosphonium-based ionic liquid (PBILS), Tributylmethylphosphonium bis(trifluoromethane sulfonyl)imide, on the polyethylene oxide polymer electrolyte and its use in electrochemical applications is investigated. The optimized polymer electrolyte formulation, combined with 20 wt % ionic liquids, exhibits an ionic conductivity of approximately 7.17 × 10−4 S/cm at room temperature, along with a wide electrochemical stability window and remarkable thermal stability. The unique aspect of this work is the dual applicability of the PBIL-based polymer electrolyte, which was successfully used as a common electrolyte in both dye-sensitized solar cells (DSSCs) and electric double-layer capacitors (EDLCs). This dual functionality of the PBIL-based polymer electrolyte demonstrates its versatility, making it an exceptional candidate for energy storage and conversion systems.
{"title":"Multifunctional phosphonium-based ionic liquid embedded polymer electrolyte for dual energy conversion and storage","authors":"Suneyana Rawat , Ram Chandra Singh , Monika Michalska , Serguei V. Savilov , Markus Diantoro , Pramod K. Singh","doi":"10.1016/j.jsamd.2025.101084","DOIUrl":"10.1016/j.jsamd.2025.101084","url":null,"abstract":"<div><div>In the realm of green and sustainable energy use, solid electrolytes are recognized for their environmentally friendly and degradable properties. Simultaneously, significant efforts have been made to improve the ionic transport and interfacial stability of polymer electrolytes to facilitate the development of electrochemical devices. In this context, the influence of the phosphonium-based ionic liquid (PBILS), Tributylmethylphosphonium bis(trifluoromethane sulfonyl)imide, on the polyethylene oxide polymer electrolyte and its use in electrochemical applications is investigated. The optimized polymer electrolyte formulation, combined with 20 wt % ionic liquids, exhibits an ionic conductivity of approximately 7.17 × 10−4 S/cm at room temperature, along with a wide electrochemical stability window and remarkable thermal stability. The unique aspect of this work is the dual applicability of the PBIL-based polymer electrolyte, which was successfully used as a common electrolyte in both dye-sensitized solar cells (DSSCs) and electric double-layer capacitors (EDLCs). This dual functionality of the PBIL-based polymer electrolyte demonstrates its versatility, making it an exceptional candidate for energy storage and conversion systems.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101084"},"PeriodicalIF":6.8,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145837501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1016/j.jsamd.2025.101087
Ibrahim Adamu Tasiu , Md Parvez Islam , Mayesha Khanam Prity , Nafisa Maliyat Tasniya , Dey Samar , Alam Ummey Mariya , Hongyi Zhou , Jin-Wei Gao
Utilizing the combination of electron spin and the electric field, spintronic technology has become a revolutionary way to overcome the drawbacks of traditional charge-based electronics, such as power inefficiency and performance saturation. This paper reviews recent breakthroughs in spintronics, which have achieved ultrafast switching speeds and ultra-low energy consumption in magnetic tunnel junctions. By integrating advanced materials, such as topological insulators, two-dimensional ferromagnets, and heavy metals, we found the room-temperature stabilization of skyrmions with storage densities exceeding 1Tb/in2, enabling high-density nonvolatile memory. Furthermore, a hybrid complementary metal-oxide semiconductor-spintronic architecture is discussed, which reduces power consumption by 30 % in neuromorphic computing applications while maintaining compatibility with existing semiconductor technologies. Key innovations, such as optimized cobalt-iron-boron/magnesium oxide interfaces for tunneling magnetoresistance ratios exceeding 300 %, efficient spin-charge conversion in heavy metals, and voltage-controlled skyrmion devices for sub-0.1 pJ/bit operation, are also discussed. These advancements address scalability, thermal stability, and fabrication challenges, positioning spintronics as a cornerstone for next-generation memory, logic devices, and quantum computing. We also found that spintronic neuromorphic systems can achieve 20 TOP/s/w, outperforming traditional artificial intelligence accelerators. At the same time, spin qubits with 99.9 % fidelity offer a scalable pathway to quantum computing, underscoring spintronics' potential to revolutionize artificial intelligence, the Internet of Things, and quantum technologies, providing energy-efficient, high-performance solutions for the post-Moore era. Future efforts will focus on three-dimensional magnetic tunnel junction stacking with densities exceeding 1 Tb/mm3, and defect-tolerant materials for large-scale commercialization.
{"title":"Spintronics technology: A comprehensive review of materials, applications, and future trends","authors":"Ibrahim Adamu Tasiu , Md Parvez Islam , Mayesha Khanam Prity , Nafisa Maliyat Tasniya , Dey Samar , Alam Ummey Mariya , Hongyi Zhou , Jin-Wei Gao","doi":"10.1016/j.jsamd.2025.101087","DOIUrl":"10.1016/j.jsamd.2025.101087","url":null,"abstract":"<div><div>Utilizing the combination of electron spin and the electric field, spintronic technology has become a revolutionary way to overcome the drawbacks of traditional charge-based electronics, such as power inefficiency and performance saturation. This paper reviews recent breakthroughs in spintronics, which have achieved ultrafast switching speeds and ultra-low energy consumption in magnetic tunnel junctions. By integrating advanced materials, such as topological insulators, two-dimensional ferromagnets, and heavy metals, we found the room-temperature stabilization of skyrmions with storage densities exceeding 1Tb/in<sup>2</sup>, enabling high-density nonvolatile memory. Furthermore, a hybrid complementary metal-oxide semiconductor-spintronic architecture is discussed, which reduces power consumption by 30 % in neuromorphic computing applications while maintaining compatibility with existing semiconductor technologies. Key innovations, such as optimized cobalt-iron-boron/magnesium oxide interfaces for tunneling magnetoresistance ratios exceeding 300 %, efficient spin-charge conversion in heavy metals, and voltage-controlled skyrmion devices for sub-0.1 pJ/bit operation, are also discussed. These advancements address scalability, thermal stability, and fabrication challenges, positioning spintronics as a cornerstone for next-generation memory, logic devices, and quantum computing. We also found that spintronic neuromorphic systems can achieve 20 <em>TOP/s/w</em>, outperforming traditional artificial intelligence accelerators. At the same time, spin qubits with 99.9 % fidelity offer a scalable pathway to quantum computing, underscoring spintronics' potential to revolutionize artificial intelligence, the Internet of Things, and quantum technologies, providing energy-efficient, high-performance solutions for the post-Moore era. Future efforts will focus on three-dimensional magnetic tunnel junction stacking with densities exceeding 1 Tb/mm<sup>3</sup>, and defect-tolerant materials for large-scale commercialization.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101087"},"PeriodicalIF":6.8,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145837499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sn4+ substitution at the Ti sites of CaCu3Ti4.5O12 ceramics was successfully achieved via a polymer pyrolysis technique. The effects of Sn4+ incorporation on the dielectric and nonlinear electrical properties were systematically examined. XRD and FE-SEM analyses confirmed the coexistence of CaCu3Ti4O12 and TiO2 phases with refined grains and uniformly dispersed secondary phases, while EDXS mapping revealed suppressed CuO segregation together with enhanced TiO2 homogeneity along grain boundaries. Consequently, the CaCu3Ti4.3Sn0.2O12 ceramic sintered at 1060 °C for 6 h exhibited a high permittivity (ε′ ≈ 7.45 × 103) and ultralow dielectric loss (tan δ = 0.027 at 1 kHz, 30 °C), together with excellent temperature stability (Δε' < ±15 % from −60 to 150 °C), meeting the X8R capacitor standard. Nonlinear J–E analysis revealed a significant enhancement in α (≈35.9) and Eb (≈1.32 × 104 V cm−1), suitable for varistor applications. The improved dielectric and nonlinear responses stemmed from increased grain-boundary resistance (Rgb ≈ 224.1 kΩ cm) and higher barrier height (ΦB ≈ 1.15 eV), both induced by Sn4+ substitution and microstructural refinement. XANES results revealed a slight Ti4+ → Ti3+ reduction, enhancing small-polaron hopping in semiconducting grains and maintaining strong grain-boundary insulation, which together shape the dielectric and nonlinear behaviors. These synergistic effects enable high stability, low loss, and strong non-Ohmic performance, positioning Sn-doped CaCu3Ti4+xO12 ceramics as promising candidates for next-generation capacitor–varistor integration.
{"title":"Sn4+-modified Ti-rich CaCu3Ti4.5O12 ceramics with low loss and X8R-Grade thermal stability prepared by polymer pyrolysis","authors":"Ekaphan Swatsitang , Sasitorn Putjuso , Anuchit Hunyek , Thanin Putjuso","doi":"10.1016/j.jsamd.2025.101086","DOIUrl":"10.1016/j.jsamd.2025.101086","url":null,"abstract":"<div><div>Sn<sup>4+</sup> substitution at the Ti sites of CaCu<sub>3</sub>Ti<sub>4.5</sub>O<sub>12</sub> ceramics was successfully achieved via a polymer pyrolysis technique. The effects of Sn<sup>4+</sup> incorporation on the dielectric and nonlinear electrical properties were systematically examined. XRD and FE-SEM analyses confirmed the coexistence of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> and TiO<sub>2</sub> phases with refined grains and uniformly dispersed secondary phases, while EDXS mapping revealed suppressed CuO segregation together with enhanced TiO<sub>2</sub> homogeneity along grain boundaries. Consequently, the CaCu<sub>3</sub>Ti<sub>4.3</sub>Sn<sub>0.2</sub>O<sub>12</sub> ceramic sintered at 1060 °C for 6 h exhibited a high permittivity (ε′ ≈ 7.45 × 10<sup>3</sup>) and ultralow dielectric loss (tan δ = 0.027 at 1 kHz, 30 °C)<strong>,</strong> together with excellent temperature stability (Δε' < ±15 % from −60 to 150 °C)<strong>,</strong> meeting the X8R capacitor standard<strong>.</strong> Nonlinear <em>J–E</em> analysis revealed a significant enhancement in α (≈35.9) and E<sub>b</sub> (≈1.32 × 10<sup>4</sup> V cm<sup>−1</sup>)<strong>,</strong> suitable for varistor applications. The improved dielectric and nonlinear responses stemmed from increased grain-boundary resistance (<em>R</em><sub>gb</sub> ≈ 224.1 kΩ cm) and higher barrier height (Φ<sub>B</sub> ≈ 1.15 eV), both induced by Sn<sup>4+</sup> substitution and microstructural refinement. XANES results revealed a slight Ti<sup>4+</sup> → Ti<sup>3+</sup> reduction, enhancing small-polaron hopping in semiconducting grains and maintaining strong grain-boundary insulation, which together shape the dielectric and nonlinear behaviors. These synergistic effects enable high stability, low loss, and strong non-Ohmic performance, positioning Sn-doped CaCu<sub>3</sub>Ti<sub>4+<em>x</em></sub>O<sub>12</sub> ceramics as promising candidates for next-generation capacitor–varistor integration.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101086"},"PeriodicalIF":6.8,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145837498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The pure MoS, binary ZnS/MoS, and ternary ZnS/MoS/composites incorporated with carbonaceous materials such as SWCNT, MWCNT, and GO nano-composites are synthesized using a hydrothermal technique. The compositions of the pure, binary, and ternary nano-composites are maintained at ratios of 100, 90:10, and 86:10:4, respectively. The XRD analysis confirmed the formation of a hexagonal single-phase structure. The surface morphology revealed well-defined nano-spheres with clear boundaries. Among the prepared materials, the ternary ZnS (86 %)–MoS (10 %)–GO (4 %) composite exhibited excellent electrochemical performance, delivering an average specific capacitance of 1098 F/g at various scan rates. It also demonstrated a high energy density of 1093 Wh/kg and a power density of 9.3 W/kg. A predominant pseudocapacitive charge-storage behavior is observed, with a diffusive contribution of 85.47 % at a scan rate of 5 mV/s, indicating its potential as a promising candidate for advanced energy storage systems. The enhanced electrochemical performance is attributed to the synergistic effect of transition metal sulfides combined with carbonaceous materials.
{"title":"Improved structure and supercapacitor performance by harnessing MoS/ZnS/GO &CNTs Nanospheres","authors":"Rabia Khurram , Safia Anjum , Imed Boukhris , Anam Mansoor , Tafruj Ilayas , Mehwish Sattar","doi":"10.1016/j.jsamd.2025.101080","DOIUrl":"10.1016/j.jsamd.2025.101080","url":null,"abstract":"<div><div>The pure MoS, binary ZnS/MoS, and ternary ZnS/MoS/composites incorporated with carbonaceous materials such as SWCNT, MWCNT, and GO nano-composites are synthesized using a hydrothermal technique. The compositions of the pure, binary, and ternary nano-composites are maintained at ratios of 100, 90:10, and 86:10:4, respectively. The XRD analysis confirmed the formation of a hexagonal single-phase structure. The surface morphology revealed well-defined nano-spheres with clear boundaries. Among the prepared materials, the ternary ZnS (86 %)–MoS (10 %)–GO (4 %) composite exhibited excellent electrochemical performance, delivering an average specific capacitance of 1098 F/g at various scan rates. It also demonstrated a high energy density of 1093 Wh/kg and a power density of 9.3 W/kg. A predominant pseudocapacitive charge-storage behavior is observed, with a diffusive contribution of 85.47 % at a scan rate of 5 mV/s, indicating its potential as a promising candidate for advanced energy storage systems. The enhanced electrochemical performance is attributed to the synergistic effect of transition metal sulfides combined with carbonaceous materials.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101080"},"PeriodicalIF":6.8,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1016/j.jsamd.2025.101083
Aravind Rajan Ayagara , Subramanyam Vijayasaradhi , Sai Adithya Vanga , Mayur Shriram Kannadkar , André Langlet
Recent advancements in stealth technology have intensified the demand for radar-absorbing materials (RAMs) that combine superior attenuation performance with structural integrity. This review systematically examines carbon-based RAMs, specifically polymer nanocomposites reinforced with carbon-based nanofillers, emphasizing their dual role in enhancing electromagnetic absorption and mechanical performance. This work uniquely integrates the mechanical behavior of these materials, providing a comprehensive understanding of filler dispersion, interfacial interactions, and their influence on dielectric loss and load-bearing capabilities. Comparative analysis across multiple studies highlights how processing routes, filler morphology, and multi-layer configurations affect reflection loss (RL), impedance matching, and bandwidth within the X-band (8.2–12.4 GHz). Hybrid and multilayer systems demonstrate synergistic effects, achieving broadband absorption exceeding 4 GHz with RL values below −40 dB, while maintaining enhanced tensile and flexural strengths at optimal filler loadings. The review further delineates fabrication methods, scaling challenges, and optimization strategies essential for practical implementation. Finally, emerging trends like multifunctional and hybrid nanofillers, lightweight foamed architectures, and surface-functionalized composites are discussed as promising pathways toward durable, scalable, and structurally integrated carbon-based RAMs for next-generation defense and aerospace platforms.
{"title":"Polymer matrix composites as radar-absorbent materials in the X-Band: A comprehensive review","authors":"Aravind Rajan Ayagara , Subramanyam Vijayasaradhi , Sai Adithya Vanga , Mayur Shriram Kannadkar , André Langlet","doi":"10.1016/j.jsamd.2025.101083","DOIUrl":"10.1016/j.jsamd.2025.101083","url":null,"abstract":"<div><div>Recent advancements in stealth technology have intensified the demand for radar-absorbing materials (RAMs) that combine superior attenuation performance with structural integrity. This review systematically examines carbon-based RAMs, specifically polymer nanocomposites reinforced with carbon-based nanofillers, emphasizing their dual role in enhancing electromagnetic absorption and mechanical performance. This work uniquely integrates the mechanical behavior of these materials, providing a comprehensive understanding of filler dispersion, interfacial interactions, and their influence on dielectric loss and load-bearing capabilities. Comparative analysis across multiple studies highlights how processing routes, filler morphology, and multi-layer configurations affect reflection loss (RL), impedance matching, and bandwidth within the X-band (8.2–12.4 GHz). Hybrid and multilayer systems demonstrate synergistic effects, achieving broadband absorption exceeding 4 GHz with RL values below −40 dB, while maintaining enhanced tensile and flexural strengths at optimal filler loadings. The review further delineates fabrication methods, scaling challenges, and optimization strategies essential for practical implementation. Finally, emerging trends like multifunctional and hybrid nanofillers, lightweight foamed architectures, and surface-functionalized composites are discussed as promising pathways toward durable, scalable, and structurally integrated carbon-based RAMs for next-generation defense and aerospace platforms.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101083"},"PeriodicalIF":6.8,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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