Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995536
A. Djelloul, B. Despax, J. Couderc, P. Duverneuil
The behaviour of plasma reactors is complex and affected by a large number of parameters (temperature, pressure, flow rates, power, frequency, etc...). In that context, modeling constitutes a very convenient theoretical approach to analyze the complex parameters influences on the reactors overall performances, in the particular case studied here, amorphous hydrogenated silicon deposition rate profiles on the substrates. This particular study is devoted to a detailed analysis of the reactor behaviour in higher electrical power conditions. It demonstrates that, if relatively simple mechanisms for electron-molecule interactions and gas phase reactions can be used in low power conditions,this do not remain true in higher power conditions where a great number of reactions must be taken into account.
{"title":"Reactor Modelling and Analysis of Amorphous Hydrogenated Silicon Deposition by PECVD","authors":"A. Djelloul, B. Despax, J. Couderc, P. Duverneuil","doi":"10.1051/JPHYSCOL:1995536","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995536","url":null,"abstract":"The behaviour of plasma reactors is complex and affected by a large number of parameters (temperature, pressure, flow rates, power, frequency, etc...). In that context, modeling constitutes a very convenient theoretical approach to analyze the complex parameters influences on the reactors overall performances, in the particular case studied here, amorphous hydrogenated silicon deposition rate profiles on the substrates. This particular study is devoted to a detailed analysis of the reactor behaviour in higher electrical power conditions. It demonstrates that, if relatively simple mechanisms for electron-molecule interactions and gas phase reactions can be used in low power conditions,this do not remain true in higher power conditions where a great number of reactions must be taken into account.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89404382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995544
A. Drozdov, S. Troyanov
Homoligand and mixed ligand barium diketonate complexes have been synthesized and characterized by X-ray structure determination. Homoligand complexes with dipivaloylmethane hexafluoroacetone and pivaloyltrifluoroacetone have oligigomeric or polymeric structure. The mixed complexes with additional anionic ligands (Cl - OH - , Piv - ) form pentanuclear complexes. The structures of the mixed ligand complexes with Lewis bases contain either mono or dinuclear chelates. Deoligomerization is accompanied by a decrease of the sublimation temperature and improves a storage stability of barium complexes used in MOCVD process for production of HTSC films.
{"title":"Barium diketonates as precursors for HTSC thin films: structure and properties","authors":"A. Drozdov, S. Troyanov","doi":"10.1051/JPHYSCOL:1995544","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995544","url":null,"abstract":"Homoligand and mixed ligand barium diketonate complexes have been synthesized and characterized by X-ray structure determination. Homoligand complexes with dipivaloylmethane hexafluoroacetone and pivaloyltrifluoroacetone have oligigomeric or polymeric structure. The mixed complexes with additional anionic ligands (Cl - OH - , Piv - ) form pentanuclear complexes. The structures of the mixed ligand complexes with Lewis bases contain either mono or dinuclear chelates. Deoligomerization is accompanied by a decrease of the sublimation temperature and improves a storage stability of barium complexes used in MOCVD process for production of HTSC films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87104520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955110
D. Dorignac, S. Schamm, C. Grigis, J. Santiso, G. Garcia, A. Figueras
This paper is concerned with high-T c superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces-yttria stabilized zirconia buffer /(1-102)-sapphire substrate, YBa 2 Cu 3 O 7-x film/Y 2 O 3 precipitates as well as YBa 2 Cu 3 O 7-x film/(001)-NdGaO 3 , -SrTiO 3 , and -MgO substrates - has been investigated by high resolution electron microscopy. The orientation relationships and the corresponding layer sequences across the interfaces have been determined with the aid of computer simulations.
本文研究了用金属-有机化学气相沉积法制备的高温超导化合物。利用高分辨电子显微镜研究了不同类型界面——钇稳定氧化锆缓冲液/(1-102)-蓝宝石衬底、YBa 2 Cu 3 O 7-x薄膜/ y2 O 3沉淀物以及YBa 2 Cu 3 O 7-x薄膜/(001)- ndgao 3、- srtio 3和- mgo衬底的纳米结构。通过计算机模拟，确定了各界面间的取向关系和相应的层序。
{"title":"HREM Characterization of Interfaces in Thin MOCVD Superconducting Films","authors":"D. Dorignac, S. Schamm, C. Grigis, J. Santiso, G. Garcia, A. Figueras","doi":"10.1051/JPHYSCOL:19955110","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955110","url":null,"abstract":"This paper is concerned with high-T c superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces-yttria stabilized zirconia buffer /(1-102)-sapphire substrate, YBa 2 Cu 3 O 7-x film/Y 2 O 3 precipitates as well as YBa 2 Cu 3 O 7-x film/(001)-NdGaO 3 , -SrTiO 3 , and -MgO substrates - has been investigated by high resolution electron microscopy. The orientation relationships and the corresponding layer sequences across the interfaces have been determined with the aid of computer simulations.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74382106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995581
I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D. Dumitras, S. Mulenko, A. N. Pogorelyǐ, A. Andrei
Thin film deposition by laser irradiation of Fe(CO) 5 at two radiation wavelengths (248 nm and 488 nm) was performed. A perpendicular geometry of irradiation was used. Maximum deposition rates of 14 A/s at λ = 248 nm and 1.5 A/s at λ = 488 nm were obtained, indicating a diffusion limited process. SEM analysis of film morphologies showed significant differencies in the nucleation and growth of films deposited at 248 nm and 488 nm. XPS surface analysis revealed a higher carbon content and carbidic phases in the surface of films deposited at 488 nm on SiO 2 (quartz) substrates. Oxidized surface Fe phases were found in films, with increasing the exposure time to laser radiation. The film properties are discussed in connection with irradiation conditions and specific mechanisms involved.
{"title":"A Comparative Study of Iron-Based Film Deposition from Iron Pentacarbonyl at 248 nm and 488 nm","authors":"I. Voicu, R. Alexandrescu, R. Cireasa, I. Morjan, D. Dumitras, S. Mulenko, A. N. Pogorelyǐ, A. Andrei","doi":"10.1051/JPHYSCOL:1995581","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995581","url":null,"abstract":"Thin film deposition by laser irradiation of Fe(CO) 5 at two radiation wavelengths (248 nm and 488 nm) was performed. A perpendicular geometry of irradiation was used. Maximum deposition rates of 14 A/s at λ = 248 nm and 1.5 A/s at λ = 488 nm were obtained, indicating a diffusion limited process. SEM analysis of film morphologies showed significant differencies in the nucleation and growth of films deposited at 248 nm and 488 nm. XPS surface analysis revealed a higher carbon content and carbidic phases in the surface of films deposited at 488 nm on SiO 2 (quartz) substrates. Oxidized surface Fe phases were found in films, with increasing the exposure time to laser radiation. The film properties are discussed in connection with irradiation conditions and specific mechanisms involved.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85823225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995586
T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko
Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.
{"title":"Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films","authors":"T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko","doi":"10.1051/JPHYSCOL:1995586","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995586","url":null,"abstract":"Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75590096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995598
A. Kasatkin, S. U. Rybakov, G. M. Anurova
A diffusion silicide coatings on refractory under thermal shock. A prospective method of improving their durability is the formation of multi-component coatings. Ti is one of the widespread oomponents of such coatings. In this work, process of simultaneous diffusion saturation of niobium by Ti and Si in powder mixtures has been investigated. The coatings can be divided into two basic types: Nb-Ti solid solutions and Nb and Ti silicides. The coatings of the first type obtained in Ti-Ti 5 Si 3 powder mixtures. The complex silicide layers were observed in the packs with higher silicon aotivity (Ti 5 Si 3 -TiSi and TiSi 2 -TiSi mixtures). The activities of Ti and Si have been shown to be principal controlling factors in coating phase in composition. The coatings allows to increase heat-resistance of the niobium and niobium alloys up to 2000°C (1,5 hour).
{"title":"Heat-Resistance and Phase Composition of Ti-Si Coatings on Niobium","authors":"A. Kasatkin, S. U. Rybakov, G. M. Anurova","doi":"10.1051/JPHYSCOL:1995598","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995598","url":null,"abstract":"A diffusion silicide coatings on refractory under thermal shock. A prospective method of improving their durability is the formation of multi-component coatings. Ti is one of the widespread oomponents of such coatings. In this work, process of simultaneous diffusion saturation of niobium by Ti and Si in powder mixtures has been investigated. The coatings can be divided into two basic types: Nb-Ti solid solutions and Nb and Ti silicides. The coatings of the first type obtained in Ti-Ti 5 Si 3 powder mixtures. The complex silicide layers were observed in the packs with higher silicon aotivity (Ti 5 Si 3 -TiSi and TiSi 2 -TiSi mixtures). The activities of Ti and Si have been shown to be principal controlling factors in coating phase in composition. The coatings allows to increase heat-resistance of the niobium and niobium alloys up to 2000°C (1,5 hour).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75902087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955131
P. Nagels, E. Sleeckx, R. Callaerts
The preparation of layers of amorphous Se by plasma-enhanced CVD using the hydride H 2 Se as precursor gas is described. Using a mixture of 15 vol.% H 2 Se in H 2 , partly crystallized films were obtained. Information concerning the structure of the films was obtained from Raman spectroscopy. The spectra of amorphous Se indicated that the dominant molecular structure is the eight-membered ring and/or a chain with Se g molecular fragments. The optical transmission spectrum was recorded at different temperatures in the range 77-300 K. The optical bandgap E r was calculated from the optical absorption coefficients α using Tauc law: αhυ = C(hυ-E T ) 2 , where hυ is the photon energy. The temperature dependence of E T can be approximated by a linear relation: Δ/E T (T 2 -T 1 = -7.6 x 10 -4 x (T 2 -T 1 ).
{"title":"Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films","authors":"P. Nagels, E. Sleeckx, R. Callaerts","doi":"10.1051/JPHYSCOL:19955131","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955131","url":null,"abstract":"The preparation of layers of amorphous Se by plasma-enhanced CVD using the hydride H 2 Se as precursor gas is described. Using a mixture of 15 vol.% H 2 Se in H 2 , partly crystallized films were obtained. Information concerning the structure of the films was obtained from Raman spectroscopy. The spectra of amorphous Se indicated that the dominant molecular structure is the eight-membered ring and/or a chain with Se g molecular fragments. The optical transmission spectrum was recorded at different temperatures in the range 77-300 K. The optical bandgap E r was calculated from the optical absorption coefficients α using Tauc law: αhυ = C(hυ-E T ) 2 , where hυ is the photon energy. The temperature dependence of E T can be approximated by a linear relation: Δ/E T (T 2 -T 1 = -7.6 x 10 -4 x (T 2 -T 1 ).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85599116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955127
F. Felten, J. Sénateur, F. Weiss, R. Madar, A. Abrutis
A new process for stable generation of precursor's vapour pressure for CVD thin layers synthesis is experimented. The vapour pressure is controlled by sequential computer-driven injection of precise micro amounts of liquid in an evaporator, where flash volatilization occurs. During deposition, the precursors are maintained at room temperature under inert gases in an hermetically closed vessel: even thermally unstable precursors may be used. The results reported here are focused on the OMCVD deposition of Ta 2 O 5 . The growth rate increases up to 11 μm/h at 650°C (amorphous layers), and decreases above (crystallized layers). In a second part, we demonstrate the feasibility of Ta 2 O 5 /SiO 2 multilayers using two injectors.
{"title":"Deposition of oxide layers by computer controlled 'injection-LPCVD'","authors":"F. Felten, J. Sénateur, F. Weiss, R. Madar, A. Abrutis","doi":"10.1051/JPHYSCOL:19955127","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955127","url":null,"abstract":"A new process for stable generation of precursor's vapour pressure for CVD thin layers synthesis is experimented. The vapour pressure is controlled by sequential computer-driven injection of precise micro amounts of liquid in an evaporator, where flash volatilization occurs. During deposition, the precursors are maintained at room temperature under inert gases in an hermetically closed vessel: even thermally unstable precursors may be used. The results reported here are focused on the OMCVD deposition of Ta 2 O 5 . The growth rate increases up to 11 μm/h at 650°C (amorphous layers), and decreases above (crystallized layers). In a second part, we demonstrate the feasibility of Ta 2 O 5 /SiO 2 multilayers using two injectors.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80093913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995515
M. Pons, A. Benezech, P. Huguet, R. Gaufrès, P. Diez, D. Lafforet
Thick tungsten coatings have been produced by chemical vapour deposition (CVD) from H 2 -WF 6 at a temperature in the range 773-1073 K under a reduced pressure. The experimental set-up is designed for in situ Raman analysis of the gas phase (temperature and WF 6 concentration) during the growth of tungsten coatings. A two dimensional mass transport model was proposed. It assumes a simple chemical pathway. Only the H 2 reduction of WF 6 has been taken into account. The major objective of the paper is to report on the comparison between (i) the experimental deposition rate and the deposition rate predicted by the model, (it) the values of temperature and gas phase composition deduced from Raman spectroscopy measurements and the values of these quantities obtained by numerical calculations. These comparisons have shown the predictive capabilities of the numerical modelling and that the temperature and WF 6 partial pressures can be recorded by a Raman equipment during the deposition process.
{"title":"Chemical Vapour Deposition of Thick Tungsten Coatings : Raman Measurements and Mass Transport Modelling","authors":"M. Pons, A. Benezech, P. Huguet, R. Gaufrès, P. Diez, D. Lafforet","doi":"10.1051/JPHYSCOL:1995515","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995515","url":null,"abstract":"Thick tungsten coatings have been produced by chemical vapour deposition (CVD) from H 2 -WF 6 at a temperature in the range 773-1073 K under a reduced pressure. The experimental set-up is designed for in situ Raman analysis of the gas phase (temperature and WF 6 concentration) during the growth of tungsten coatings. A two dimensional mass transport model was proposed. It assumes a simple chemical pathway. Only the H 2 reduction of WF 6 has been taken into account. The major objective of the paper is to report on the comparison between (i) the experimental deposition rate and the deposition rate predicted by the model, (it) the values of temperature and gas phase composition deduced from Raman spectroscopy measurements and the values of these quantities obtained by numerical calculations. These comparisons have shown the predictive capabilities of the numerical modelling and that the temperature and WF 6 partial pressures can be recorded by a Raman equipment during the deposition process.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91516495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955130
J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura, Y. Sawada
Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH 4 and GeH 4 gases was investigated. Self-limiting SiH 4 reaction on the Ge surface results in Si atomic-layer formation at substrate temperatures below 300 °C even without the flash heating. In the case of Ge growth, by increasing the flash light intensity and the GeH 4 partial pressure, Ge atomic-layer growth on the wet-cleaned Si(100) was achieved with a single flash shot at 275°C. Using these growth controls, resonant tunneling diodes of Ge/Si,Ge 1 (50A)/Ge(50A) / Si 1 Ge 1 (50A)/Ge, in which the Si 1 Ge 1 layers were formed by alternately depositing single atomic-layers of Si and Ge, were fabricated, and clear negative resistance in the current-voltage characteristic was observed at 10 K. The current peaks were expected to be assigned to a hole resonant tunneling via light-hole bound state in the Ge quantum well. This fact suggests that the diode structure has abrupt Si 1 Ge 1 /Ge interfaces by employing a low-temperature atomic layer-by-layer growth process below 300°C.
研究了sih4和geh4气体在闪速加热CVD中对Si和Ge的原子逐层外延控制。当衬底温度低于300°C时，即使没有闪蒸加热，Ge表面的sih4自限制反应也能形成硅原子层。在锗生长的情况下，通过增加闪光光强度和geh4分压，在275°C的单次闪光下，在湿清洗的Si(100)上实现了锗原子层的生长。利用这些生长控制，制备了Ge/Si、Ge 1 (50A)/Ge(50A) /Si 1 Ge 1 (50A)/ Si 1 Ge 1 (50A)/Ge 1 Ge 1 (50A)/Ge的谐振隧道二极管，其中Si 1 Ge 1层由Si和Ge的单原子层交替沉积而成，在10 K时观察到明显的电流-电压特性负电阻。在Ge量子阱中，通过光孔束缚态产生的空穴共振隧穿峰被认为是电流峰值。这一事实表明，采用低于300°C的低温原子逐层生长工艺，二极管结构具有突变的Si 1 Ge 1 /Ge界面。
{"title":"Atomic layer-by-layer epitaxy of silicon and germanium using flash heating in CVD","authors":"J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura, Y. Sawada","doi":"10.1051/JPHYSCOL:19955130","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955130","url":null,"abstract":"Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH 4 and GeH 4 gases was investigated. Self-limiting SiH 4 reaction on the Ge surface results in Si atomic-layer formation at substrate temperatures below 300 °C even without the flash heating. In the case of Ge growth, by increasing the flash light intensity and the GeH 4 partial pressure, Ge atomic-layer growth on the wet-cleaned Si(100) was achieved with a single flash shot at 275°C. Using these growth controls, resonant tunneling diodes of Ge/Si,Ge 1 (50A)/Ge(50A) / Si 1 Ge 1 (50A)/Ge, in which the Si 1 Ge 1 layers were formed by alternately depositing single atomic-layers of Si and Ge, were fabricated, and clear negative resistance in the current-voltage characteristic was observed at 10 K. The current peaks were expected to be assigned to a hole resonant tunneling via light-hole bound state in the Ge quantum well. This fact suggests that the diode structure has abrupt Si 1 Ge 1 /Ge interfaces by employing a low-temperature atomic layer-by-layer growth process below 300°C.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86787787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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