Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995543
C. Dubourdieu, J. Sénateur, O. Thomas, F. Weiss
YBCO thin films have been grown by Metal Organic Chemical Vapour Deposition in a cold wall type reactor. The β-diketonates of yttrium, barium and copper are used as precursors. Films have been deposited on (001) MgO and (012) LaAlO 3 single crystalline substrates. The morphology is very dependant on the gas phase composition. Different oxygen partial pressures have been investigated. An increasing oxygen partial pressure - at a fixed deposition temperature - is found to increase the growth rate and to promote the growth of a-axis grains (grains with the c axis parallel to the substrate's surface). In our standard deposition conditions, Ti subs t rate holder = 875°C, P Total = 5 Torr, and P O2 = 2 Torr, high quality films are obtained, exhibiting T C ∼ 91 K (10%-90% of the resistive transition) and J C (77K) ∼ 5.10 6 A/cm 2 . A trilayer structure YBCO/Y 2 O 3 /YBCO (900A/100A/900A) has been grown on LaAlO 3 substrate, with the epitaxial relationship: (001) YBCO // or (001) Y2O3 . No misorientations have been found in the (a,b) plane. The trilayer exhibits a sharp superconducting transition (ΔT C = 0.4 K), with T C = 82.5 K, and J C (77 K) ∼ 10 6 A/cm 2 .
采用金属有机化学气相沉积法在冷壁反应器中制备了YBCO薄膜。钇、钡和铜的β-二酮酸盐用作前体。薄膜沉积在(001)MgO和(012)LaAlO 3单晶衬底上。形貌与气相组成有很大关系。研究了不同的氧分压。在固定的沉积温度下，增加氧分压可以提高生长速度，促进a轴晶粒(c轴平行于衬底表面的晶粒)的生长。在我们的标准沉积条件下，Ti subt rate holder = 875°C, P Total = 5 Torr, P O2 = 2 Torr，获得了高质量的薄膜，表现出t C ~ 91 K(10%-90%的电阻转变)和J C (77K) ~ 5.10 6 A/ cm2。在LaAlO 3衬底上生长出了YBCO/ Y2O3 /YBCO (900A/100A/900A)三层结构，外延关系为(001)YBCO/ /或(001)Y2O3。在(a,b)平面上没有发现定向错误。三层材料表现出明显的超导跃迁(ΔT C = 0.4 K)，温度为82.5 K，温度为77 K ~ 10.6 a / cm2。
{"title":"High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD","authors":"C. Dubourdieu, J. Sénateur, O. Thomas, F. Weiss","doi":"10.1051/JPHYSCOL:1995543","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995543","url":null,"abstract":"YBCO thin films have been grown by Metal Organic Chemical Vapour Deposition in a cold wall type reactor. The β-diketonates of yttrium, barium and copper are used as precursors. Films have been deposited on (001) MgO and (012) LaAlO 3 single crystalline substrates. The morphology is very dependant on the gas phase composition. Different oxygen partial pressures have been investigated. An increasing oxygen partial pressure - at a fixed deposition temperature - is found to increase the growth rate and to promote the growth of a-axis grains (grains with the c axis parallel to the substrate's surface). In our standard deposition conditions, Ti subs t rate holder = 875°C, P Total = 5 Torr, and P O2 = 2 Torr, high quality films are obtained, exhibiting T C ∼ 91 K (10%-90% of the resistive transition) and J C (77K) ∼ 5.10 6 A/cm 2 . A trilayer structure YBCO/Y 2 O 3 /YBCO (900A/100A/900A) has been grown on LaAlO 3 substrate, with the epitaxial relationship: (001) YBCO // or (001) Y2O3 . No misorientations have been found in the (a,b) plane. The trilayer exhibits a sharp superconducting transition (ΔT C = 0.4 K), with T C = 82.5 K, and J C (77 K) ∼ 10 6 A/cm 2 .","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89864748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955113
H. Boer
In many (CVD-) processes, there is an increasing demand for delivering reactants as near liquid vapours. Controlling vapours, however, is often a delicate matter. The proven method is the well known bubbler system, with it's inherent problems: poor stability and poor reproducibility, due to the extremely high sensitivity for changes in temperature. The system described in this paper is an evaporation system, based on mass flow controllers. The vapour is controlled in the liquid phase; thus the amount of vapour is controlled, stable and reproducible, independent of temperature or pressure. Special attention is given to the new possibilities that come into reach with this system, e.g. fluids with very low vapour pressures which are unstable at high temperatures and mixtures can be evaporated properly in this system.
{"title":"Mass Flow Controlled Evaporation System","authors":"H. Boer","doi":"10.1051/JPHYSCOL:19955113","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955113","url":null,"abstract":"In many (CVD-) processes, there is an increasing demand for delivering reactants as near liquid vapours. Controlling vapours, however, is often a delicate matter. The proven method is the well known bubbler system, with it's inherent problems: poor stability and poor reproducibility, due to the extremely high sensitivity for changes in temperature. The system described in this paper is an evaporation system, based on mass flow controllers. The vapour is controlled in the liquid phase; thus the amount of vapour is controlled, stable and reproducible, independent of temperature or pressure. Special attention is given to the new possibilities that come into reach with this system, e.g. fluids with very low vapour pressures which are unstable at high temperatures and mixtures can be evaporated properly in this system.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"115 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79636881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995530
M. Masi, S. Fogliani, S. Carrà
The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.
{"title":"Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors","authors":"M. Masi, S. Fogliani, S. Carrà","doi":"10.1051/JPHYSCOL:1995530","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995530","url":null,"abstract":"The epitaxial silicon chemical vapor deposition by SiCl 4 /H 2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusors, susceptor tilting angle) and deposition conditions (i.e., flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72963688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995564
E. Mazurenko, A. I. Gerasimchuk
The applications of such coordination compounds (chelates) as metal β-diketonates in different CVD techniques were examined. It was shown that high chemical and physical characteristics of these compounds allow their favourable use comparatively with other volatile compounds. The general miles in volatility and thermal stability of β-diketonates and their fluorine derivatives were discussed. The ways of preparation of various functional materials with specific properties were determined.
{"title":"Volatile Metals Coordination Compounds as Precursors for Functional Materials Synthesis by CVD-Method","authors":"E. Mazurenko, A. I. Gerasimchuk","doi":"10.1051/JPHYSCOL:1995564","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995564","url":null,"abstract":"The applications of such coordination compounds (chelates) as metal β-diketonates in different CVD techniques were examined. It was shown that high chemical and physical characteristics of these compounds allow their favourable use comparatively with other volatile compounds. The general miles in volatility and thermal stability of β-diketonates and their fluorine derivatives were discussed. The ways of preparation of various functional materials with specific properties were determined.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"46 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75656644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995521
A. Bykov, A. E. Turgambaeva, I. Igumenov, P. P. Semyannikov
The processes of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates (Al(aa) 3 and Sc(aa) 3 ) were investigated in the 160-650°C temperature range using a high-temperature molecular beam source with mass spectrometric sampling of the gas phase composition directly at the outlet from the reaction zone. A scheme of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates vapour is suggested. It is established that the common mechanism of thermolysis of these complexes is due to the commonness of electronic structure of ions Mg 2+ , Al 3+ , Sc 3+ and Hf 4+ . According to the scheme, the process proceeds along three parallel routes, one of them being possible only for complexes possessing more than two ligands, in this case the gaseous products resulting from cyclic dimerization of ligand fragments are formed. The influence of oxygen and hydrogen on the composition of the gaseous products and the mechanism of thermolysis of the complexes vapour are also established. From temperature curves, the effective values of kinetic parameters in Arrhenius equation are calculated for the first order reaction.
{"title":"Mass Spectrometric Study of Thermolysis Mechanism of Metal Acetylacetonates Vapour","authors":"A. Bykov, A. E. Turgambaeva, I. Igumenov, P. P. Semyannikov","doi":"10.1051/JPHYSCOL:1995521","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995521","url":null,"abstract":"The processes of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates (Al(aa) 3 and Sc(aa) 3 ) were investigated in the 160-650°C temperature range using a high-temperature molecular beam source with mass spectrometric sampling of the gas phase composition directly at the outlet from the reaction zone. A scheme of thermal decomposition of aluminium(III) and scandium(III) acetylacetonates vapour is suggested. It is established that the common mechanism of thermolysis of these complexes is due to the commonness of electronic structure of ions Mg 2+ , Al 3+ , Sc 3+ and Hf 4+ . According to the scheme, the process proceeds along three parallel routes, one of them being possible only for complexes possessing more than two ligands, in this case the gaseous products resulting from cyclic dimerization of ligand fragments are formed. The influence of oxygen and hydrogen on the composition of the gaseous products and the mechanism of thermolysis of the complexes vapour are also established. From temperature curves, the effective values of kinetic parameters in Arrhenius equation are calculated for the first order reaction.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75340768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995559
B. Ballarin, E. Brescacin, G. Rizzi, E. Tondello
A volatile molybdenyl complex was used as precursor for MOCVD of MoO 3 films. Decomposition paths were investigated by thermal analysis. Good quality films were obtained on different substrates and characterized by XPS, UV-Vis, XRD and SEM analyses. The different electronic properties of the various films on different substrates were studied by photoemission experiments and compared with respect to the MoO 3 single crystal.
{"title":"Deposition of MoO3 Films from a Volatile Molybdenyl Complex","authors":"B. Ballarin, E. Brescacin, G. Rizzi, E. Tondello","doi":"10.1051/JPHYSCOL:1995559","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995559","url":null,"abstract":"A volatile molybdenyl complex was used as precursor for MOCVD of MoO 3 films. Decomposition paths were investigated by thermal analysis. Good quality films were obtained on different substrates and characterized by XPS, UV-Vis, XRD and SEM analyses. The different electronic properties of the various films on different substrates were studied by photoemission experiments and compared with respect to the MoO 3 single crystal.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"105 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74160064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995574
C. Regnier, J. Desmaison, P. Tristant, D. Merle
Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). The silica films are produced by exciting oxygen in a microwave discharge while a mixture of 5% of silane diluted in argon is introduced downstream. In the afterglow, double Langmuir probe measurements and rotational temperatures deduced from optical emission spectroscopy (OES), show that the electron energy is transferred to the gas when the pressure increases (19 - 26 Pa). Therefore the electronic temperature decreases from 22000 to 11000 K and the gas temperature increases from 400 to 500 K. Moreover the microwave power (180 -480 W) has an influence on the deposition rate and on the quality of SiO 2 coatings (density and etch rate in an HF solution). This effect can be correlated with the increase in the electron density (0.7.10 10 to 3.7.10 10 cm -3 ) and of the gas temperature (400 to 460 K).
{"title":"Remote microwave plasma enhanced chemical vapour deposition of SiO2 films: oxygen plasma diagnostic","authors":"C. Regnier, J. Desmaison, P. Tristant, D. Merle","doi":"10.1051/JPHYSCOL:1995574","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995574","url":null,"abstract":"Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). The silica films are produced by exciting oxygen in a microwave discharge while a mixture of 5% of silane diluted in argon is introduced downstream. In the afterglow, double Langmuir probe measurements and rotational temperatures deduced from optical emission spectroscopy (OES), show that the electron energy is transferred to the gas when the pressure increases (19 - 26 Pa). Therefore the electronic temperature decreases from 22000 to 11000 K and the gas temperature increases from 400 to 500 K. Moreover the microwave power (180 -480 W) has an influence on the deposition rate and on the quality of SiO 2 coatings (density and etch rate in an HF solution). This effect can be correlated with the increase in the electron density (0.7.10 10 to 3.7.10 10 cm -3 ) and of the gas temperature (400 to 460 K).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73242521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995528
H. Siimon, J. Aarik
A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.
{"title":"Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor","authors":"H. Siimon, J. Aarik","doi":"10.1051/JPHYSCOL:1995528","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995528","url":null,"abstract":"A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"78 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83900501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995512
J. Arndt, L. Klippe, R. Stolle, G. Wahl
The evaporation and deposition process of Bis(acetylacetonato)platinum(II) (Pt(acac) 2 ) was examined in a computerized microbalance system, which allows the measuring of the mass of evaporating precursor and depositing layer simultaneously. The investigations were carried out in an argon-atmosphere and an argon/oxygen-atmosphere with pressure ranging from 250 Pa to 1000 Pa. The deposition kinetics were investigated in the temperature range between T dep = 523 K and T dep = 733 K. A strong dependence of the deposition rate on the pretreatment of the substrate was observed. Beginning the deposition on alumina with low deposition temperatures T dep an activation energy of 204 ± 9 kJ/mol was found. On platinum precoated substrates we observed higher deposition rates and lower values for the activation energy, if the precoating was carried out at temperature T pre > T dep . At long deposition times with T dep = const. the deposition rates on precoated substrates decreased to the values obtained without precoating at higher temperatures. This effect has not been clarified. In argon-atmosphere platinum layers containing carbon were deposited. Increasing the deposition temperature caused increased carbon contamination. The carbon can be removed by oxidation in air after the deposition. Platinum coatings without carbon contamination were obtained by adding oxygen during the deposition process.
{"title":"Deposition of Platinum from Bis(Acetylacetonato)Platinum(II)","authors":"J. Arndt, L. Klippe, R. Stolle, G. Wahl","doi":"10.1051/JPHYSCOL:1995512","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995512","url":null,"abstract":"The evaporation and deposition process of Bis(acetylacetonato)platinum(II) (Pt(acac) 2 ) was examined in a computerized microbalance system, which allows the measuring of the mass of evaporating precursor and depositing layer simultaneously. The investigations were carried out in an argon-atmosphere and an argon/oxygen-atmosphere with pressure ranging from 250 Pa to 1000 Pa. The deposition kinetics were investigated in the temperature range between T dep = 523 K and T dep = 733 K. A strong dependence of the deposition rate on the pretreatment of the substrate was observed. Beginning the deposition on alumina with low deposition temperatures T dep an activation energy of 204 ± 9 kJ/mol was found. On platinum precoated substrates we observed higher deposition rates and lower values for the activation energy, if the precoating was carried out at temperature T pre > T dep . At long deposition times with T dep = const. the deposition rates on precoated substrates decreased to the values obtained without precoating at higher temperatures. This effect has not been clarified. In argon-atmosphere platinum layers containing carbon were deposited. Increasing the deposition temperature caused increased carbon contamination. The carbon can be removed by oxidation in air after the deposition. Platinum coatings without carbon contamination were obtained by adding oxygen during the deposition process.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86187612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995597
S. G. Andryushin, A. Kasatkin
The three-zoned structure of the coatings for protection from high-temperature oxidation of carbon materials (CM) was grounded. The kinetic of formation and phase composition of diffusion coating C-Me-Si and C-Me-B-Si (Me = Ti, Zr or Hf) systems formed on CM (graphite and carbon/carbon materials) have been studied. The coating on CM received by using sequential metallization, boron- and silicium- deposition from dispersive solid-phased media. The rate of formation coatings of C-Me-Si by metallization and Si-deposition on CM decreases on the line: Ti--Zr--Hf, and the formation carbide layers MeC by diffusion metallization CM describes linear-parabolic law have been shown. The velocity of boron diffusion of the CM - MeC layer compositions is very little and it is increased on the line: Ti--Zr--Hf insignificantly. The formation of MeB 2 layer at the boriding are decreased of the velocity of siliciding. The coating proposed base three-zoned structure formed by compounds of C-Me-Si or C-Me-B-Si systems and intended for protection of CM from high-temperature oxidation (T>1400°C). The laws of phase form and destruction at high-temperature oxidation in air for these coatings are investigated.
对碳材料高温氧化防护涂层的三带结构进行了研究。研究了在CM(石墨和碳/碳材料)上形成的C-Me-Si和C-Me-B-Si (Me = Ti, Zr或Hf)扩散涂层体系的形成动力学和相组成。在分散固相介质中采用顺序金属化、硼和硅沉积的方法在CM上获得涂层。金属化和硅沉积在CM上形成C-Me-Si涂层的速率在Ti—Zr—Hf线上呈递减趋势，而扩散金属化CM在MeC上形成碳化物层符合线性—抛物线规律。CM - MeC层成分中硼的扩散速度很小，在Ti—Zr—Hf线上硼的扩散速度增加不显著。硼化过程中meb2层的形成随着硅化速度的增加而减少。该涂层提出了由C- me - si或C- me - b - si体系化合物形成的碱性三带结构，用于保护CM免受高温氧化(T>1400°C)。研究了这些涂层在空气中高温氧化时的相形成和破坏规律。
{"title":"Refractory Coatings of C-Me-Si and C-Me-B-Si Systems for Protection of Carbon Materials (CM)","authors":"S. G. Andryushin, A. Kasatkin","doi":"10.1051/JPHYSCOL:1995597","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995597","url":null,"abstract":"The three-zoned structure of the coatings for protection from high-temperature oxidation of carbon materials (CM) was grounded. The kinetic of formation and phase composition of diffusion coating C-Me-Si and C-Me-B-Si (Me = Ti, Zr or Hf) systems formed on CM (graphite and carbon/carbon materials) have been studied. The coating on CM received by using sequential metallization, boron- and silicium- deposition from dispersive solid-phased media. The rate of formation coatings of C-Me-Si by metallization and Si-deposition on CM decreases on the line: Ti--Zr--Hf, and the formation carbide layers MeC by diffusion metallization CM describes linear-parabolic law have been shown. The velocity of boron diffusion of the CM - MeC layer compositions is very little and it is increased on the line: Ti--Zr--Hf insignificantly. The formation of MeB 2 layer at the boriding are decreased of the velocity of siliciding. The coating proposed base three-zoned structure formed by compounds of C-Me-Si or C-Me-B-Si systems and intended for protection of CM from high-temperature oxidation (T>1400°C). The laws of phase form and destruction at high-temperature oxidation in air for these coatings are investigated.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77841280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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