Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189784
G. Dohler, D. Gagne, D. Zavadil
A new approach to dual mode technology will be presented in this paper. The device, presently under development for AFAL under Contract No. F33615-79-C-1863 uses a low voltage solid C.W. beam and a high voltage hollow pulse beam. The C.W. beam is continuously used within a PPM structure to generate C.W. power and its space charge is used to stabilize a higher voltage hollow beam injected around the solid beam during pulse operation. This paper presents beam-beam, beam-helix and beam-helix-beam interactions studies for various operating parameters and discusses significant phenomena, such as Kompfner dip and double-beam amplification. A final gun design for creating concentric beams is also discussed.
{"title":"Beam-beam interactions in concentric-beam dual-mode TWT's","authors":"G. Dohler, D. Gagne, D. Zavadil","doi":"10.1109/IEDM.1980.189784","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189784","url":null,"abstract":"A new approach to dual mode technology will be presented in this paper. The device, presently under development for AFAL under Contract No. F33615-79-C-1863 uses a low voltage solid C.W. beam and a high voltage hollow pulse beam. The C.W. beam is continuously used within a PPM structure to generate C.W. power and its space charge is used to stabilize a higher voltage hollow beam injected around the solid beam during pulse operation. This paper presents beam-beam, beam-helix and beam-helix-beam interactions studies for various operating parameters and discusses significant phenomena, such as Kompfner dip and double-beam amplification. A final gun design for creating concentric beams is also discussed.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123587120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189745
H. Darley, T. Houston
This paper discusses the experimental optimization of the structural parameters of MESFET devices using a new self-aligned MESFET structure that incorporates a source-drain extension. Detail device characteristics as a function of gate length and width are presented. Ring oscillator measurements have demonstrated speed-power products as low as 1.5 femtoJoules.
{"title":"Optimization of self-aligned silicon MESFETs for VLSI at micron dimensions","authors":"H. Darley, T. Houston","doi":"10.1109/IEDM.1980.189745","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189745","url":null,"abstract":"This paper discusses the experimental optimization of the structural parameters of MESFET devices using a new self-aligned MESFET structure that incorporates a source-drain extension. Detail device characteristics as a function of gate length and width are presented. Ring oscillator measurements have demonstrated speed-power products as low as 1.5 femtoJoules.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"126 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126280756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189864
W. Hoke, R. Traczewski
Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.
{"title":"Fabrication and evaluation of GaAs-GaAlAs double-velocity IMPATT diodes","authors":"W. Hoke, R. Traczewski","doi":"10.1109/IEDM.1980.189864","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189864","url":null,"abstract":"Double-velocity IMPATT diodes have been fabricated and cw tested at X-band. From flat-profile single-drift material, 2.2 watts with II percent efficiency was attained. Somewhat higher efficiency was achieved with a High-Low structure. These results exceed previously reported heterojunction diode measurements. The flat-profile results are comparable to the performance of the corresponding GaAs structure. No significant difference was observed in the thermal resistance of the double-velocity diode and the conventional diode.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125673504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189880
D. Polla, C.E. Jones, C. Fonstad
We report an experimental study of thermally stimulated trap phenomena in Hg1-xCdxTe photodiodes. Three experimental spectroscopic techniques have been used to characterize the trapping and emission of carriers at deep energy levels located within the space charge region or n+-on-p junction photodiodes. This study utilized both the synchronous-detection methods of Deep Level Transient Spectroscopy (DLTS) and Admittance Spectroscopy (AS) as well as the single-shot techniques of Thermally Stimulated Current (TSC) and Thermally Stimulated Capacitance (TSCap). Application of these techniques in a complementary approach has identified a single dominant mid-gap recombination center in p-Hg1-xCdxTe (0.2 < × < 0.4). Further, the diode electrical properties p-side minority carrier lifetime τ, dynamic resistance-area product at zero bias voltage RoA, and reverse-bias leakage current were shown to be directly related to a single bulk, donor-like, Shockley-Read recombination center which was identified by space charge spectroscopy.
{"title":"Space charge spectroscopy in Hg1-xCdxTe n+-p photodiodes","authors":"D. Polla, C.E. Jones, C. Fonstad","doi":"10.1109/IEDM.1980.189880","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189880","url":null,"abstract":"We report an experimental study of thermally stimulated trap phenomena in Hg1-xCdxTe photodiodes. Three experimental spectroscopic techniques have been used to characterize the trapping and emission of carriers at deep energy levels located within the space charge region or n+-on-p junction photodiodes. This study utilized both the synchronous-detection methods of Deep Level Transient Spectroscopy (DLTS) and Admittance Spectroscopy (AS) as well as the single-shot techniques of Thermally Stimulated Current (TSC) and Thermally Stimulated Capacitance (TSCap). Application of these techniques in a complementary approach has identified a single dominant mid-gap recombination center in p-Hg1-xCdxTe (0.2 < × < 0.4). Further, the diode electrical properties p-side minority carrier lifetime τ, dynamic resistance-area product at zero bias voltage RoA, and reverse-bias leakage current were shown to be directly related to a single bulk, donor-like, Shockley-Read recombination center which was identified by space charge spectroscopy.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"139 27","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120820401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189820
H. Jory, S. Evans, J. Moran, J. Shively, D. Stone, G. Thomas
Pulsed and CW gyrotron oscillators have been designed and constructed for use in electron cyclotron resonance heating in plasma fusion experiments. The tubes are designed for 200 kW output at 28 GHz with beam input of 80 kV and 8 A. The pulsed design has been operated at duty factors of 5% and pulse lengths up to 40 msec. The CW design has produced output of 200 kW CW with an efficiency of 50%. It also operated with 52% efficiency at an output level of 170 kW CW. The tubes are designed for power output in the TE02circular electric mode in oversize (2.5 inch diameter) circular waveguide. Some investigations of mode purity of the output will be described. The design and operation of waveguide components such as bends and mode filters for use with the gyrotrons will be discussed.
{"title":"200 kW pulsed and CW gyrotrons at 28 GHz","authors":"H. Jory, S. Evans, J. Moran, J. Shively, D. Stone, G. Thomas","doi":"10.1109/IEDM.1980.189820","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189820","url":null,"abstract":"Pulsed and CW gyrotron oscillators have been designed and constructed for use in electron cyclotron resonance heating in plasma fusion experiments. The tubes are designed for 200 kW output at 28 GHz with beam input of 80 kV and 8 A. The pulsed design has been operated at duty factors of 5% and pulse lengths up to 40 msec. The CW design has produced output of 200 kW CW with an efficiency of 50%. It also operated with 52% efficiency at an output level of 170 kW CW. The tubes are designed for power output in the TE02circular electric mode in oversize (2.5 inch diameter) circular waveguide. Some investigations of mode purity of the output will be described. The design and operation of waveguide components such as bends and mode filters for use with the gyrotrons will be discussed.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134080968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/iedm.1980.189783
C. Deville, G. Fleury, J. Kuntzmann
{"title":"Average power limits of brazed-helix TWT's","authors":"C. Deville, G. Fleury, J. Kuntzmann","doi":"10.1109/iedm.1980.189783","DOIUrl":"https://doi.org/10.1109/iedm.1980.189783","url":null,"abstract":"","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133531723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189965
T. Okabe, M. Nagata, H. Itoh
A microwave power MOSFET t h a t c a n d e l i v e r 22W of output power a t 1.1GHz wi th 8.5dB g a i n w i l l be r epor t ed . U n t i l r e c e n t l y , b i p o l a r t r a n s i s t o r s h a v e b e e n t h e o n l y p r a c t i c a l s o l i d s ta te microwave power source, i n s p i t e of t h e i r f o r m a t i o n o f l o c a l i z e d h o t s p o t s t h a t limit t h e i r ASO's. On t h e o t h e r h a n d , t h e S i MOSFET seems t o h a v e p o t e n t i a l l y l a r g e power h a n d l i n g c a p a b i l i t i e s at microwave range, because of i t s high breakdown v o l t a g e and l a r g e AS0 c h a r a c t e r i s t i c s . The d e v i c e r e p o r t e d h e r e h a s 2 pm channel length and 80 nm t h i c k g a t e o x i d e f o r h i g h f r e q u e n c y performance, and a 70V breakdown v o l t a g e , a i d e d by a n o f f s e t c h a n n e l , f o r h i g h power. T h i s s t r u c t u r e was op t imized to g ive maximum ou tpu t power i n r e l a t i o n t o t h e i o n d o s e and breakdown vo l t age . In an expe r imen ta l ampl i f i e r test at 1.1 GHz, a maximum ou tpu t power of 22W ( t h e h i g h e s t power eve r r e p o r t e d f o r MOSFET s above LGHz) w i th 8.5dB g a i n and 51% d r a i n e f f i c i e n c y was measured. The device s t ruc ture , p rocess technology and per formance w i l l be desc r ibed .
一种微波功率 MOSFET 可在 1.1GHz 频率下输出 22W 功率，同时具有 8.5dB g a i n。因此，在限制 ASO 的微波功率源方面，B i p o l a r T r a n s i s t o r 已经取得了成功。在其他方面，由于 S i MOSFET 的高击穿电压和低击穿 AS0 c h a r c t e r i t i c s，它似乎可以在微波范围内实现高功率。该器件的沟道长度为 2 pm，波长为 80 nm，具有良好的性能，击穿电压为 70V，功率为 70 V。该系统在运行时可获得最大的输出功率和击穿电压。在频率为 1.1 GHz 的放大测试中，测得的最大输出功率为 22W（LGHz 以上 MOSFET 的最大功率），分贝为 8.5dB，击穿电压为 51%。将对器件结构、工艺技术和性能进行描述。
{"title":"A microwave silicon power MOSFET","authors":"T. Okabe, M. Nagata, H. Itoh","doi":"10.1109/IEDM.1980.189965","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189965","url":null,"abstract":"A microwave power MOSFET t h a t c a n d e l i v e r 22W of output power a t 1.1GHz wi th 8.5dB g a i n w i l l be r epor t ed . U n t i l r e c e n t l y , b i p o l a r t r a n s i s t o r s h a v e b e e n t h e o n l y p r a c t i c a l s o l i d s ta te microwave power source, i n s p i t e of t h e i r f o r m a t i o n o f l o c a l i z e d h o t s p o t s t h a t limit t h e i r ASO's. On t h e o t h e r h a n d , t h e S i MOSFET seems t o h a v e p o t e n t i a l l y l a r g e power h a n d l i n g c a p a b i l i t i e s at microwave range, because of i t s high breakdown v o l t a g e and l a r g e AS0 c h a r a c t e r i s t i c s . The d e v i c e r e p o r t e d h e r e h a s 2 pm channel length and 80 nm t h i c k g a t e o x i d e f o r h i g h f r e q u e n c y performance, and a 70V breakdown v o l t a g e , a i d e d by a n o f f s e t c h a n n e l , f o r h i g h power. T h i s s t r u c t u r e was op t imized to g ive maximum ou tpu t power i n r e l a t i o n t o t h e i o n d o s e and breakdown vo l t age . In an expe r imen ta l ampl i f i e r test at 1.1 GHz, a maximum ou tpu t power of 22W ( t h e h i g h e s t power eve r r e p o r t e d f o r MOSFET s above LGHz) w i th 8.5dB g a i n and 51% d r a i n e f f i c i e n c y was measured. The device s t ruc ture , p rocess technology and per formance w i l l be desc r ibed .","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132784966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189870
G. Dohler, A. Rengan, F. Scafuri
A new concept for integrated cathode grid structures is presented. Two fine photo etched grids of similar geometry are brazed into a sandwich structure where they remain spaced and electrically isolated from each other by small dielectric posts. The fabrication and testing of structures based on this concept has required a study of insulating materials at elevated temperatures and grid emission suppression schemes, the results of which are discussed. Life test results are related to physico-chemical processes taking place in the direct environment of thermionic cathodes.
{"title":"Integrated grid technology","authors":"G. Dohler, A. Rengan, F. Scafuri","doi":"10.1109/IEDM.1980.189870","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189870","url":null,"abstract":"A new concept for integrated cathode grid structures is presented. Two fine photo etched grids of similar geometry are brazed into a sandwich structure where they remain spaced and electrically isolated from each other by small dielectric posts. The fabrication and testing of structures based on this concept has required a study of insulating materials at elevated temperatures and grid emission suppression schemes, the results of which are discussed. Life test results are related to physico-chemical processes taking place in the direct environment of thermionic cathodes.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130176591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189800
G. E. Smith, A. Steckl
RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET's with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,1 times 10^{16}/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET's resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.
{"title":"Two-dimensional integrated circuit process modeling program - RECIPE","authors":"G. E. Smith, A. Steckl","doi":"10.1109/IEDM.1980.189800","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189800","url":null,"abstract":"RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET's with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,1 times 10^{16}/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET's resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114143664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189766
H. Yamasaki, J. Schellenberg, Z. Lemnios
The Ku-band 3.6 mm power FET described in this paper was developed using a unique approach of combining six 0.6 mm cells at the chip level, The resultant device has delivered 2 watts of output power with 3,9 dB gain and 27.5% power added efficiency at 15 GHz, At 18 G.Hz, the output power o5 the same device is 1.25 watts with an associated gain o5 3.5 dB and 16,4% efficiency, This unique cell combining approach has offered significant flexibility in designing Ku-band and higher frequency FETs.
{"title":"A unique approach to Ku-band power FETs","authors":"H. Yamasaki, J. Schellenberg, Z. Lemnios","doi":"10.1109/IEDM.1980.189766","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189766","url":null,"abstract":"The Ku-band 3.6 mm power FET described in this paper was developed using a unique approach of combining six 0.6 mm cells at the chip level, The resultant device has delivered 2 watts of output power with 3,9 dB gain and 27.5% power added efficiency at 15 GHz, At 18 G.Hz, the output power o5 the same device is 1.25 watts with an associated gain o5 3.5 dB and 16,4% efficiency, This unique cell combining approach has offered significant flexibility in designing Ku-band and higher frequency FETs.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114562871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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