Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880514
Qiang Li, C. Tang, K. Lau, R. Hill, A. Vert
Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.
{"title":"Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays","authors":"Qiang Li, C. Tang, K. Lau, R. Hill, A. Vert","doi":"10.1109/ICIPRM.2014.6880514","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880514","url":null,"abstract":"Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126557585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880552
Jaehong Park, Kiwon Lee, Jooseok Lee, Kyounghoon Yang
A low power on-off mode resonant tunneling diode (RTD) based oscillator is demonstrated by using an RTD/heterojunction bipolar transistor (HBT) MMIC technology. Using the negative differential resistance (NDR) characteristics of the tunneling diode, which arise at a low applied voltage range from the quantum-effect, the low power oscillators are used for microwave on-off keying (OOK) signal modulation. The fabricated RTD-based oscillator shows low power consumption of 5 mW at an oscillation frequency of 5.2 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s from the fast switching capabilities of the RTD and HBT switch. A good energy efficiency of 5 pJ/bit has been obtained in this work.
{"title":"Low power on-off mode RTD-based oscillator integrated with an HBT switch","authors":"Jaehong Park, Kiwon Lee, Jooseok Lee, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880552","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880552","url":null,"abstract":"A low power on-off mode resonant tunneling diode (RTD) based oscillator is demonstrated by using an RTD/heterojunction bipolar transistor (HBT) MMIC technology. Using the negative differential resistance (NDR) characteristics of the tunneling diode, which arise at a low applied voltage range from the quantum-effect, the low power oscillators are used for microwave on-off keying (OOK) signal modulation. The fabricated RTD-based oscillator shows low power consumption of 5 mW at an oscillation frequency of 5.2 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s from the fast switching capabilities of the RTD and HBT switch. A good energy efficiency of 5 pJ/bit has been obtained in this work.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134173545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880570
Y. Miyamoto, T. Kanazawa, Y. Yonai, Atsushi Kato, M. Fujimatsu, M. Kashiwano, K. Ohsawa, K. Ohashi
High on-currents (Ion) and low off-currents (Ioff) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and ID = 2.4 mA/μm at VD = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low Ioff. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high Ion and low Ioff realization.
{"title":"InGaAs MOSFET source structures toward high speed/low power applications","authors":"Y. Miyamoto, T. Kanazawa, Y. Yonai, Atsushi Kato, M. Fujimatsu, M. Kashiwano, K. Ohsawa, K. Ohashi","doi":"10.1109/ICIPRM.2014.6880570","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880570","url":null,"abstract":"High on-currents (Ion) and low off-currents (I<sub>off</sub>) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and I<sub>D</sub> = 2.4 mA/μm at V<sub>D</sub> = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I<sub>off</sub>. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I<sub>on</sub> and low I<sub>off</sub> realization.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131792808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880571
W. Metaferia, Yanting Sun, Pritesh Dagur, C. Junesand, S. Lourdudoss
III-V semiconductors are suitable for high efficiency and radiation resistant solar cells. However, the high cost of these materials limited the application of these solar cells only for specialty application. High quality polycrystalline III-V thin films on low cost substrate are the viable solutions for the problem. In this work we demonstrate two new approaches to grow polycrystalline InP on Si(001)substrate. (i) A simple chemical solution route which makes use of deposition of In2O3 on Si and its subsequent phosphidisation and (ii) In assisted growth that involves deposition of In metal on Si and subsequent growth of InP from its precursors in hydride vapor phase epitaxy. Both techniques are generic and can be applied to other semiconductors on low cost and flexible substrates.
{"title":"Alternative approaches in growth of polycrystalline InP on Si","authors":"W. Metaferia, Yanting Sun, Pritesh Dagur, C. Junesand, S. Lourdudoss","doi":"10.1109/ICIPRM.2014.6880571","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880571","url":null,"abstract":"III-V semiconductors are suitable for high efficiency and radiation resistant solar cells. However, the high cost of these materials limited the application of these solar cells only for specialty application. High quality polycrystalline III-V thin films on low cost substrate are the viable solutions for the problem. In this work we demonstrate two new approaches to grow polycrystalline InP on Si(001)substrate. (i) A simple chemical solution route which makes use of deposition of In2O3 on Si and its subsequent phosphidisation and (ii) In assisted growth that involves deposition of In metal on Si and subsequent growth of InP from its precursors in hydride vapor phase epitaxy. Both techniques are generic and can be applied to other semiconductors on low cost and flexible substrates.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131110275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880524
K. Merghem, C. Calò, R. Rosales, X. Lafosse, G. Aubin, Anthony Martinez, F. Lelarge, A. Ramdane
In this paper, we report an investigation of frequency stability of combs generated by means of passive mode-locked InAs/InP quantum-dash lasers. Quantum-dash Mode Locked Lasers performances enable low timing jitter and enhanced long term stability.
{"title":"Optical frequency comb generation using InAs/InP quantum-dash-based passive mode-locked lasers","authors":"K. Merghem, C. Calò, R. Rosales, X. Lafosse, G. Aubin, Anthony Martinez, F. Lelarge, A. Ramdane","doi":"10.1109/ICIPRM.2014.6880524","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880524","url":null,"abstract":"In this paper, we report an investigation of frequency stability of combs generated by means of passive mode-locked InAs/InP quantum-dash lasers. Quantum-dash Mode Locked Lasers performances enable low timing jitter and enhanced long term stability.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"181 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115269358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880523
Y. Takei, A. Matsumoto, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka
We fabricated a double micro-ring-resonator wavelength-selective filter using the waveguide fabricated by the intermixing of InAs/InGaAlAs quantum dots grown on an InP (311)B substrate. Intermixing was done by using ICP-RIE etching and annealing technique at a low temperature of 650°C. The output-power contrasts of the device were 9.0 dB and 8.6 dB for TE and TM modes, respectively.
{"title":"Micro-ring-resonator wavelength-selective filter using highly-stacked quantum dot intermixed waveguide","authors":"Y. Takei, A. Matsumoto, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka","doi":"10.1109/ICIPRM.2014.6880523","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880523","url":null,"abstract":"We fabricated a double micro-ring-resonator wavelength-selective filter using the waveguide fabricated by the intermixing of InAs/InGaAlAs quantum dots grown on an InP (311)B substrate. Intermixing was done by using ICP-RIE etching and annealing technique at a low temperature of 650°C. The output-power contrasts of the device were 9.0 dB and 8.6 dB for TE and TM modes, respectively.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115435459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880548
Kewei Gong, Changzheng Sun, B. Xiong, Yi Luo
We report a novel method for direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment, which requires only a low annealing temperature of 320°C. Scanning acoustic microscope (SAM) measurements show that the proposed treatment helps form a firm bond between the wafer pair. The bonding strength is measured with a destructive approach, and the bonding interface is evaluated by scanning electron microscope (SEM).
{"title":"Low temperature direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment","authors":"Kewei Gong, Changzheng Sun, B. Xiong, Yi Luo","doi":"10.1109/ICIPRM.2014.6880548","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880548","url":null,"abstract":"We report a novel method for direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment, which requires only a low annealing temperature of 320°C. Scanning acoustic microscope (SAM) measurements show that the proposed treatment helps form a firm bond between the wafer pair. The bonding strength is measured with a destructive approach, and the bonding interface is evaluated by scanning electron microscope (SEM).","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"432 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115600365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880526
H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, M. Asada
We report an increase in oscillation frequency of room-temperature terahertz oscillators using AIAs/InGaAs resonant tunneling diodes (RTDs) with optimized collector spacer thickness. Because of the trade-off relation between the capacitance and electron transit time for the spacer thickness, an optimum thickness exists in terms of the oscillation frequency. The highest frequency in this experiment was 1.42 THz at the optimum spacer thickness of 12 nm with an output power of ~1 μW. A fundamental oscillation at a frequency >2 THz and output power of ~300 μW at 1 THz are theoretically possible by optimized structures of RTD and antenna.
{"title":"Frequency increase in resonant-tunneling-diode terahertz oscillators using optimum collector spacer","authors":"H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, M. Asada","doi":"10.1109/ICIPRM.2014.6880526","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880526","url":null,"abstract":"We report an increase in oscillation frequency of room-temperature terahertz oscillators using AIAs/InGaAs resonant tunneling diodes (RTDs) with optimized collector spacer thickness. Because of the trade-off relation between the capacitance and electron transit time for the spacer thickness, an optimum thickness exists in terms of the oscillation frequency. The highest frequency in this experiment was 1.42 THz at the optimum spacer thickness of 12 nm with an output power of ~1 μW. A fundamental oscillation at a frequency >2 THz and output power of ~300 μW at 1 THz are theoretically possible by optimized structures of RTD and antenna.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"51 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114041132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880556
R. Anufriev, N. Chauvin, Jean-Baptiste Barakat, H. Khmissi, K. Naji, G. Patriarche, X. Letartre, M. Gendry, C. Bru-Chevallier
Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.
{"title":"Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires","authors":"R. Anufriev, N. Chauvin, Jean-Baptiste Barakat, H. Khmissi, K. Naji, G. Patriarche, X. Letartre, M. Gendry, C. Bru-Chevallier","doi":"10.1109/ICIPRM.2014.6880556","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880556","url":null,"abstract":"Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115568612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880538
Konstantinos Papatryfonos, S. Joshi, K. Merghem, S. Bouchoule, S. Guilet, L. Le Gratiet, Anthony Martinez, A. Ramdane
We present results on InAs/InP quantum dash based broad area and ridge-waveguide lasers with emission wavelength up to 2 um. In addition a simulation-based design for laterally coupled DFB/DBR lasers is discussed, and the optimization of the processing steps for the realization of this design is presented. The design is fully compatible with readily available processing techniques and enables sufficiently high coupling coefficients for the realization of a tunable laterally coupled DBR (LC-DBR) laser, without the need of employing any regrowth steps over corrugated substrates, used for conventional DBR lasers.
{"title":"Quantum dash based lasers for gas sensing","authors":"Konstantinos Papatryfonos, S. Joshi, K. Merghem, S. Bouchoule, S. Guilet, L. Le Gratiet, Anthony Martinez, A. Ramdane","doi":"10.1109/ICIPRM.2014.6880538","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880538","url":null,"abstract":"We present results on InAs/InP quantum dash based broad area and ridge-waveguide lasers with emission wavelength up to 2 um. In addition a simulation-based design for laterally coupled DFB/DBR lasers is discussed, and the optimization of the processing steps for the realization of this design is presented. The design is fully compatible with readily available processing techniques and enables sufficiently high coupling coefficients for the realization of a tunable laterally coupled DBR (LC-DBR) laser, without the need of employing any regrowth steps over corrugated substrates, used for conventional DBR lasers.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132354231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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