Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880559
O. Karni, K. Kuchar, A. Capua, V. Mikhelashvili, G. Eisenstein, G. Sȩk, J. Misiewicz, V. Ivanov, J. P. Roithmaier
We report on multi-wavelength pump-probe characterization of the fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Recovery of the gain at various wavelengths following a powerful optical pump pulse, was recorded at different bias levels and different excitation powers. Wavelength dependencies of gain saturation depth, of the level to which the gain recovers and of the recovery rates were obtained. Unlike in quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their zero-dimensional nature.
{"title":"Carrier dynamics in inhomogeneously broadened InAs/InP quantum-dot optical amplifiers","authors":"O. Karni, K. Kuchar, A. Capua, V. Mikhelashvili, G. Eisenstein, G. Sȩk, J. Misiewicz, V. Ivanov, J. P. Roithmaier","doi":"10.1109/ICIPRM.2014.6880559","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880559","url":null,"abstract":"We report on multi-wavelength pump-probe characterization of the fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Recovery of the gain at various wavelengths following a powerful optical pump pulse, was recorded at different bias levels and different excitation powers. Wavelength dependencies of gain saturation depth, of the level to which the gain recovers and of the recovery rates were obtained. Unlike in quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their zero-dimensional nature.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"135 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121500585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880551
T. Hiratani, K. Doi, Y. Atsuji, T. Amemiya, N. Nishiyama, S. Arai
The power consumption of a lateral current injection (LCI) type membrane distributed reflector (DR) laser under a high-speed direct modulation was theoretically investigated. As the results, we found that there is an optimal cavity length, which can be determined by the series resistance, to minimize the power consumption. For an example., an energy cost of 37 fJ/bit can be obtained at a modulation speed of 10 Gb/s for the cavity length of 17 μm when the grating coupling coefficient of 1800 cm-1 and the resistivity of p-InP cladding layer of 0.035 Ω·cm are used.
{"title":"Low-power and high-speed operation capabilities of semiconductor membrane lasers — Energy cost limited by Joule heat","authors":"T. Hiratani, K. Doi, Y. Atsuji, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880551","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880551","url":null,"abstract":"The power consumption of a lateral current injection (LCI) type membrane distributed reflector (DR) laser under a high-speed direct modulation was theoretically investigated. As the results, we found that there is an optimal cavity length, which can be determined by the series resistance, to minimize the power consumption. For an example., an energy cost of 37 fJ/bit can be obtained at a modulation speed of 10 Gb/s for the cavity length of 17 μm when the grating coupling coefficient of 1800 cm-1 and the resistivity of p-InP cladding layer of 0.035 Ω·cm are used.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123241123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880533
K. Tateno, Guoqiang Zhang, H. Gotoh
We investigated the effects of introducing tertiary-butyl chloride (TBCl) on InP and InAsP nanowire growth for the purpose of improving the tapering shape. The InP nanowire length was increased by supplying TBCl at low flow rates, and decreased gradually by supplying it at high flow rates. The growth in the radial direction was effectively suppressed by using TBCl. InAsP nanowires were also grown with TBCl. We obtained long and less tapered structures with good crystal quality. Selectivity of Cl etching to InAs and InP is discussed.
{"title":"TBCl etching for uniform-diameter InAsP nanowires","authors":"K. Tateno, Guoqiang Zhang, H. Gotoh","doi":"10.1109/ICIPRM.2014.6880533","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880533","url":null,"abstract":"We investigated the effects of introducing tertiary-butyl chloride (TBCl) on InP and InAsP nanowire growth for the purpose of improving the tapering shape. The InP nanowire length was increased by supplying TBCl at low flow rates, and decreased gradually by supplying it at high flow rates. The growth in the radial direction was effectively suppressed by using TBCl. InAsP nanowires were also grown with TBCl. We obtained long and less tapered structures with good crystal quality. Selectivity of Cl etching to InAs and InP is discussed.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122789784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880577
M. Anagnosti, C. Caillaud, G. Glastre, Jean-Francois Paret, D. Lanteri, M. Achouche
In this paper we present a high-speed photo-detector comprising a uni-traveling carrier photo-diode (UTC PD) monolithically integrated with a semiconductor optical amplifier (SOA) for 100Gbit/s applications. This new pre-amplified photoreceiver design operates at 1.55μm wavelength with the UTC PD exceeding 110GHz 3dB bandwidth at high input powers and a dark current of 1 nA. A 40% bandwidth improvement is achieved by employing new optimized transmission lines (TMLs) to equalize the intrinsic response of the detector. The high performance buried heterostructure SOA exhibits low polarization dependence loss (<;1dB) low noise figure (~8dB) and 19dB gain allowing to achieve a responsivity of >50AIW. The bias dependence of the gain and the carrier recombination was analyzed using differential carrier lifetime measurements.
{"title":"High performance monolithically integrated SOA-UTC photoreceiver for 100Gbit/s applications","authors":"M. Anagnosti, C. Caillaud, G. Glastre, Jean-Francois Paret, D. Lanteri, M. Achouche","doi":"10.1109/ICIPRM.2014.6880577","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880577","url":null,"abstract":"In this paper we present a high-speed photo-detector comprising a uni-traveling carrier photo-diode (UTC PD) monolithically integrated with a semiconductor optical amplifier (SOA) for 100Gbit/s applications. This new pre-amplified photoreceiver design operates at 1.55μm wavelength with the UTC PD exceeding 110GHz 3dB bandwidth at high input powers and a dark current of 1 nA. A 40% bandwidth improvement is achieved by employing new optimized transmission lines (TMLs) to equalize the intrinsic response of the detector. The high performance buried heterostructure SOA exhibits low polarization dependence loss (<;1dB) low noise figure (~8dB) and 19dB gain allowing to achieve a responsivity of >50AIW. The bias dependence of the gain and the carrier recombination was analyzed using differential carrier lifetime measurements.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129568165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880537
A. Gocalinska, J. Bogdan, G. Hughes, E. Pelucchi
The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.
{"title":"Native oxides formation on MOVPE grown binary III-V materials — Impact on surface wettability","authors":"A. Gocalinska, J. Bogdan, G. Hughes, E. Pelucchi","doi":"10.1109/ICIPRM.2014.6880537","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880537","url":null,"abstract":"The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"251 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129620302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880547
Yufeng Fu, Baifu Zhang, J. Kjellman, Takuo Tanemura, Y. Nakano
We propose and numerically investigate a novel hollow hexagonal InGaAs microdisk laser on a silicon substrate, which can be fabricated by the micro-channel selective-area (MC-SA) MOVPE growth technique. By simply introducing an etched hole with a suitable radius at the center of the hexagonal microdisk, quasi-whispering-gallery modes emerge and the cavity Q factor improves drastically from 371 to 3574 with a disk size of less than 20 μm2. Having full compatibility with the MC-SA MOVPE method, the presented scheme could be an attractive approach toward the monolithic integration of InGaAs disk lasers on silicon platforms.
{"title":"Numerical study on hollow hexagonal InGaAs microdisk laser on silicon","authors":"Yufeng Fu, Baifu Zhang, J. Kjellman, Takuo Tanemura, Y. Nakano","doi":"10.1109/ICIPRM.2014.6880547","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880547","url":null,"abstract":"We propose and numerically investigate a novel hollow hexagonal InGaAs microdisk laser on a silicon substrate, which can be fabricated by the micro-channel selective-area (MC-SA) MOVPE growth technique. By simply introducing an etched hole with a suitable radius at the center of the hexagonal microdisk, quasi-whispering-gallery modes emerge and the cavity Q factor improves drastically from 371 to 3574 with a disk size of less than 20 μm2. Having full compatibility with the MC-SA MOVPE method, the presented scheme could be an attractive approach toward the monolithic integration of InGaAs disk lasers on silicon platforms.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128320844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880566
K. Nishi, M. Yokoyama, H. Yokoyama, M. Takenaka, S. Takagi
We have demonstrated the operation of thin body GaSb-on-insulator (GaSb-OI) p-MOSFETs on Si wafers fabricated by direct wafer boding (DWB). We have developed a wafer-scale transfer technique for transferring ultrathin GaSb layers to Si wafers. We have found that the hole mobility of the thin body GaSb-OI p-MOSFETs depends on the GaSb thickness and the GaSb channel surface condition.
我们已经演示了薄体绝缘体上gasb (GaSb-OI) p- mosfet在直接晶圆封装(DWB)制造的硅晶圆上的操作。我们开发了一种晶圆级转移技术，用于将超薄GaSb层转移到硅晶圆上。我们发现薄体GaSb- oi p- mosfet的空穴迁移率取决于GaSb厚度和GaSb通道表面条件。
{"title":"Thin body GaSb-OI P-mosfets on Si wafers fabricated by direct wafer bonding","authors":"K. Nishi, M. Yokoyama, H. Yokoyama, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2014.6880566","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880566","url":null,"abstract":"We have demonstrated the operation of thin body GaSb-on-insulator (GaSb-OI) p-MOSFETs on Si wafers fabricated by direct wafer boding (DWB). We have developed a wafer-scale transfer technique for transferring ultrathin GaSb layers to Si wafers. We have found that the hole mobility of the thin body GaSb-OI p-MOSFETs depends on the GaSb thickness and the GaSb channel surface condition.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127759893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880576
M. Baier, F. Soares, W. Passenberg, T. Gaertner, M. Moehrle, N. Grote
We demonstrate a fully integrated polarization beam splitter with a polarization extinction ratio above 25dB for both polarization states and an insertion loss of 2.5dB. The footprint of the device including electrical contacts is 0.4×2mm2. A Mach-Zehnder configuration is used, the birefringence in both arms differs due to different waveguide widths. Fabrication tolerances can be compensated with thermal tuning. The device is realized in our generic integration platform, making it viable to provide monolithically integrated solutions for polarization diversity applications.
{"title":"Polarization beam splitter building block for InP based generic photonic integrated circuits","authors":"M. Baier, F. Soares, W. Passenberg, T. Gaertner, M. Moehrle, N. Grote","doi":"10.1109/ICIPRM.2014.6880576","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880576","url":null,"abstract":"We demonstrate a fully integrated polarization beam splitter with a polarization extinction ratio above 25dB for both polarization states and an insertion loss of 2.5dB. The footprint of the device including electrical contacts is 0.4×2mm2. A Mach-Zehnder configuration is used, the birefringence in both arms differs due to different waveguide widths. Fabrication tolerances can be compensated with thermal tuning. The device is realized in our generic integration platform, making it viable to provide monolithically integrated solutions for polarization diversity applications.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121422379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880549
Y. Ikku, M. Takenaka, S. Takagi
Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.
{"title":"Surface orientation depdendence of electro-optic effects in InGaAsP for lateral PIN-junction InGaAsP photonic-wire modulators","authors":"Y. Ikku, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2014.6880549","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880549","url":null,"abstract":"Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122590551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880517
W. S. Ko, Indrasen Bhattacharya, T. Tran, K. Ng, C. Chang-Hasnain
Using high quality, single crystalline InP nanowire grown on silicon substrate, we demonstrates sensitive avalanche photodiode with 26.6 A/W and bipolar junction phototransistor with 4 A/W integrated onto silicon substrate. The avalanche photodiode has unique radial p-n junction that allows it to reach a high avalanche gain of 100 at a low bias of 1 V. The bipolar junction phototransistor integrates a sensitive photodiode with a receiver circuit, creating a compact, monolithic receiver circuit for optical interconnect application. These devices are promising in bringing low energy, high bandwidth optical interconnects to silicon electronics.
{"title":"InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate","authors":"W. S. Ko, Indrasen Bhattacharya, T. Tran, K. Ng, C. Chang-Hasnain","doi":"10.1109/ICIPRM.2014.6880517","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880517","url":null,"abstract":"Using high quality, single crystalline InP nanowire grown on silicon substrate, we demonstrates sensitive avalanche photodiode with 26.6 A/W and bipolar junction phototransistor with 4 A/W integrated onto silicon substrate. The avalanche photodiode has unique radial p-n junction that allows it to reach a high avalanche gain of 100 at a low bias of 1 V. The bipolar junction phototransistor integrates a sensitive photodiode with a receiver circuit, creating a compact, monolithic receiver circuit for optical interconnect application. These devices are promising in bringing low energy, high bandwidth optical interconnects to silicon electronics.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127145832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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