Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880584
Y. Atsuji, K. Doi, Jieun Lee, Y. Atsumi, T. Hiratani, D. Inoue, T. Amemiya, N. Nishiyama, S. Arai
Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity length of 360 μm and the stripe width of 0.2 μm, which is lowest value ever reported in a DFB lasers on a Si substrate.
{"title":"Low-threshold-current operation of lateral current injection membrane distributed-feedback laser bonded on Si","authors":"Y. Atsuji, K. Doi, Jieun Lee, Y. Atsumi, T. Hiratani, D. Inoue, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880584","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880584","url":null,"abstract":"Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity length of 360 μm and the stripe width of 0.2 μm, which is lowest value ever reported in a DFB lasers on a Si substrate.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115693373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880569
M. Berg, Karl‐Magnus Persson, E. Lind, H. Sjoland, L. Wernersson
We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
{"title":"Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs","authors":"M. Berg, Karl‐Magnus Persson, E. Lind, H. Sjoland, L. Wernersson","doi":"10.1109/ICIPRM.2014.6880569","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880569","url":null,"abstract":"We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129874865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880572
K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau
A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.
{"title":"Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si","authors":"K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau","doi":"10.1109/ICIPRM.2014.6880572","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880572","url":null,"abstract":"A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129946311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880587
L. Fang, A. Madouri, A. Cavanna, I. Sagnes, D. Chouteau, X. Lafosse, G. Beaudoin, J. Oudar
We demonstrate that the nonlinear optical response of graphene is resonantly enhanced by incorporating monolayer graphene into a Fabry-Pérot microcavity. The modulation depth of the microcavity-integrated monolayer graphene device is increased to 12% which is much higher than the value of about 2% in other works, while retaining an ultrafast recovery time of ~0.7 ps. This suggests possible application in ultrafast all-optical signal processing.
{"title":"All-optical switching in a vertical microcavity-integrated monolayer graphene device","authors":"L. Fang, A. Madouri, A. Cavanna, I. Sagnes, D. Chouteau, X. Lafosse, G. Beaudoin, J. Oudar","doi":"10.1109/ICIPRM.2014.6880587","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880587","url":null,"abstract":"We demonstrate that the nonlinear optical response of graphene is resonantly enhanced by incorporating monolayer graphene into a Fabry-Pérot microcavity. The modulation depth of the microcavity-integrated monolayer graphene device is increased to 12% which is much higher than the value of about 2% in other works, while retaining an ultrafast recovery time of ~0.7 ps. This suggests possible application in ultrafast all-optical signal processing.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125374483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880580
Ruiyong Zhang, P. Runge, Gan Zhou, R. Klotzer, D. Pech, H. Bach, D. Pérez-Galacho, Alejandro Ortega-Murnox, R. Halir, Í. Molina-Fernández
A 56Gbaud dual polarization quadrature phase shift keying (DP-QPSK) receiver module is presented including an InP receiver chip. The chip consists of monolithically integrated polarization beam splitters (PBS), 90° hybrids and balanced photodiodes.
{"title":"56Gbaud DP-QPSK receiver module with a monolithic integrated PBS and 90° hybrid InP chip","authors":"Ruiyong Zhang, P. Runge, Gan Zhou, R. Klotzer, D. Pech, H. Bach, D. Pérez-Galacho, Alejandro Ortega-Murnox, R. Halir, Í. Molina-Fernández","doi":"10.1109/ICIPRM.2014.6880580","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880580","url":null,"abstract":"A 56Gbaud dual polarization quadrature phase shift keying (DP-QPSK) receiver module is presented including an InP receiver chip. The chip consists of monolithically integrated polarization beam splitters (PBS), 90° hybrids and balanced photodiodes.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131426686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880560
K. Uesaka, H. Shoji
We developed a tunable TDA-CSG-DR laser and an InP-based DP-IQ modulator intended for pluggable coherent transceiver applications. The fabricated TDA-CSG-DR laser achieves narrow linewidth of less than 300 kHz and high fiber output power of more than +17 dBm; the developed InP-based DP-IQ modulator co-packaged with four linear driver ICs satisfies the power dissipation of less than 3.2W. These results are promising for the realization of high-density pluggable coherent transceiver for metropolitan area networks.
{"title":"Tunable laser and modulator for pluggable coherent transcerivers","authors":"K. Uesaka, H. Shoji","doi":"10.1109/ICIPRM.2014.6880560","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880560","url":null,"abstract":"We developed a tunable TDA-CSG-DR laser and an InP-based DP-IQ modulator intended for pluggable coherent transceiver applications. The fabricated TDA-CSG-DR laser achieves narrow linewidth of less than 300 kHz and high fiber output power of more than +17 dBm; the developed InP-based DP-IQ modulator co-packaged with four linear driver ICs satisfies the power dissipation of less than 3.2W. These results are promising for the realization of high-density pluggable coherent transceiver for metropolitan area networks.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133474133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880550
Jieun Lee, K. Doi, T. Hiratani, D. Inoue, T. Amemiya, N. Nishiyama, S. Arai
To realize membrane photonic integrated circuits, a novel quantum-well-intermixing (QWI) process using dual SiO2 films (O2-sputtered layer for enhancement of QWI and plasma-deposited layer for surface protection) was investigated. By optimization of the protection layer thickness, a large bandgap wavelength shift difference of 95 nm (57 meV) as well as good photoluminescence (PL) properties (no degradations in the PL spectral width and the intensity) was obtained. Moreover, the transient region length was estimated to be less than 3 μm which is the resolution limit of our PL measurement setup.
{"title":"High quality quantum-well intermixing for InP-based membrane photonic integration on Si","authors":"Jieun Lee, K. Doi, T. Hiratani, D. Inoue, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880550","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880550","url":null,"abstract":"To realize membrane photonic integrated circuits, a novel quantum-well-intermixing (QWI) process using dual SiO2 films (O2-sputtered layer for enhancement of QWI and plasma-deposited layer for surface protection) was investigated. By optimization of the protection layer thickness, a large bandgap wavelength shift difference of 95 nm (57 meV) as well as good photoluminescence (PL) properties (no degradations in the PL spectral width and the intensity) was obtained. Moreover, the transient region length was estimated to be less than 3 μm which is the resolution limit of our PL measurement setup.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131554775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880534
J. Decobert, C. Jany, H. Guerault
This work reports recent improvements in structural characterization by high resolution x-ray diffraction (HRXRD) performed on multiple quantum well (MQW) heterostructures grown on InP substrates. A new diffractometer, providing a sub-millimeter x-ray spot and allowing accurate lateral positioning on the sample, was tested. We compared two set of samples: (i) one is the as-grown material deposited on the complete wafer; (ii) the other one is the same set of samples after different technological processes, leading therefore to very small volume of material localized at specific places on cleaved wafers or chips. We show that with this new tool, useful structural information is still accessible after processes and can lead to further device improvement.
{"title":"Microfocus HRXRD analysis of inp based photonic integrated circuits","authors":"J. Decobert, C. Jany, H. Guerault","doi":"10.1109/ICIPRM.2014.6880534","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880534","url":null,"abstract":"This work reports recent improvements in structural characterization by high resolution x-ray diffraction (HRXRD) performed on multiple quantum well (MQW) heterostructures grown on InP substrates. A new diffractometer, providing a sub-millimeter x-ray spot and allowing accurate lateral positioning on the sample, was tested. We compared two set of samples: (i) one is the as-grown material deposited on the complete wafer; (ii) the other one is the same set of samples after different technological processes, leading therefore to very small volume of material localized at specific places on cleaved wafers or chips. We show that with this new tool, useful structural information is still accessible after processes and can lead to further device improvement.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114557178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880585
Zhen Lin, M. Gendry, J. Harmand, X. Letartre
We design a III-V nanowires based photonic cavity on top of SOI waveguide for light generation in the near infrared (~1.3μm) in a silicon photonic circuit. 3D electromagnetic simulations (FDTD) are performed to design a periodic array of III-V photonic NWs vertically grown on Si. High quality factor resonances and efficient coupling between these micro-resonators and the SOI waveguide is targeted. The geometrical parameters of this architecture (number of NWs, diameter and spacing) are optimised by simulations. This original architecture opens the way to the monolithic integration of low power and small footprint microsources for silicon photonics.
{"title":"Design of III-V nanowires based micosources vertically coupled to a Si waveguide for optical interconnects","authors":"Zhen Lin, M. Gendry, J. Harmand, X. Letartre","doi":"10.1109/ICIPRM.2014.6880585","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880585","url":null,"abstract":"We design a III-V nanowires based photonic cavity on top of SOI waveguide for light generation in the near infrared (~1.3μm) in a silicon photonic circuit. 3D electromagnetic simulations (FDTD) are performed to design a periodic array of III-V photonic NWs vertically grown on Si. High quality factor resonances and efficient coupling between these micro-resonators and the SOI waveguide is targeted. The geometrical parameters of this architecture (number of NWs, diameter and spacing) are optimised by simulations. This original architecture opens the way to the monolithic integration of low power and small footprint microsources for silicon photonics.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122935374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880568
Sofia Johansson, E. Memišević, L. Wernersson, E. Lind
We present RF characterization of vertical gate-all-around InAs nanowire MOSFETs integrated on Si substrates with peak ft= 142 GHz and fmax= 155 GHz, representing the record for vertical nanowire transistors. The devices has an Lg ≈ 150 nm with a gm=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of ft is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.
{"title":"RF characterization of vertical InAs nanowire MOSFETs with ft and fmax above 140 GHz","authors":"Sofia Johansson, E. Memišević, L. Wernersson, E. Lind","doi":"10.1109/ICIPRM.2014.6880568","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880568","url":null,"abstract":"We present RF characterization of vertical gate-all-around InAs nanowire MOSFETs integrated on Si substrates with peak ft= 142 GHz and fmax= 155 GHz, representing the record for vertical nanowire transistors. The devices has an Lg ≈ 150 nm with a gm=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of ft is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125100624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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