Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880555
C. Robert, C. Cornet, T. Nguyen Thanh, M. Nestoklon, K. Pereira da Silva, M. Alonso, A. Goñi, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pédesseau, J. Jancu, J. Even, S. Mauger, P. Koenraad, A. Balocchi, P. Barate, X. Marie, N. Bertru, A. Le Corre, O. Durand
The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.
{"title":"Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots","authors":"C. Robert, C. Cornet, T. Nguyen Thanh, M. Nestoklon, K. Pereira da Silva, M. Alonso, A. Goñi, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pédesseau, J. Jancu, J. Even, S. Mauger, P. Koenraad, A. Balocchi, P. Barate, X. Marie, N. Bertru, A. Le Corre, O. Durand","doi":"10.1109/ICIPRM.2014.6880555","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880555","url":null,"abstract":"The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132608196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880519
X. Pommarede, A. Talneau, H. Benisty
An heteroepitaxial bonded III-Von Si nanopatterned waveguide is demonstrating a wavelength selective behavior thanks to a super-periodicity added to its sub-wavelength, below band-gap, structuration. Effective Medium Theory has been implemented for modal effective index determination, allowing a quick and nevertheless detailed investigation of the role of a large number of geometrical parameters. Such nanostructured waveguides offer the versatility for designing complex geometries required for hybrid advanced optical functions on silicon.
{"title":"Wavelength-selective nanopatterned III-V on Si hybrid photonic waveguide","authors":"X. Pommarede, A. Talneau, H. Benisty","doi":"10.1109/ICIPRM.2014.6880519","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880519","url":null,"abstract":"An heteroepitaxial bonded III-Von Si nanopatterned waveguide is demonstrating a wavelength selective behavior thanks to a super-periodicity added to its sub-wavelength, below band-gap, structuration. Effective Medium Theory has been implemented for modal effective index determination, allowing a quick and nevertheless detailed investigation of the role of a large number of geometrical parameters. Such nanostructured waveguides offer the versatility for designing complex geometries required for hybrid advanced optical functions on silicon.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133514946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880573
M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki
We achieved a high-performance InAlAs avalanche photodiode (APD) for beyond 25-Gbit/s applications, such as 50-Gbit/s. The large optical tolerance of the APD's vertical-illumination structure makes optical coupling easy compared with waveguide-type structures. The fabricated APD exhibits responsivity of 0.69 A/W with a large 3-dB bandwidth of 30 GHz at a multiplication factor (M) of 4.6, which enables 50-Gbit/s highly sensitive operation.
{"title":"Vertical illumination InAlAs avalanche photodiode for 50-Gbit/s applications","authors":"M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki","doi":"10.1109/ICIPRM.2014.6880573","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880573","url":null,"abstract":"We achieved a high-performance InAlAs avalanche photodiode (APD) for beyond 25-Gbit/s applications, such as 50-Gbit/s. The large optical tolerance of the APD's vertical-illumination structure makes optical coupling easy compared with waveguide-type structures. The fabricated APD exhibits responsivity of 0.69 A/W with a large 3-dB bandwidth of 30 GHz at a multiplication factor (M) of 4.6, which enables 50-Gbit/s highly sensitive operation.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132553028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880532
H. Yamaguchi, T. Nagira, Z. Kawazu, K. Ono, M. Takemi
We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Ru-doped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.
{"title":"Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration","authors":"H. Yamaguchi, T. Nagira, Z. Kawazu, K. Ono, M. Takemi","doi":"10.1109/ICIPRM.2014.6880532","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880532","url":null,"abstract":"We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Ru-doped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114826645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880558
C. Kazmierski, N. Chimot, F. Jorge, A. Konczykowska, F. Blache, J. Decobert, F. Alexandre, A. Garreau, Richard Marins da Silva
Improved-speed full-monolithic BPSK transmitter based on prefixed phase switching by fast Electro-Absorption Modulators has been realized on InP using a Selective Area Growth integrating circuit technology. It has been used in 80Gb/s multi-level BPSK format modulation experiments. Simplicity, speed scalability, ultra-small footprint and low power drive of the monolithic circuit are attractive for advanced format migration towards low-cost applications.
{"title":"80Gb/s multi-level BPSK experiment with an InP-monolithic source based on prefixed optical phase switching","authors":"C. Kazmierski, N. Chimot, F. Jorge, A. Konczykowska, F. Blache, J. Decobert, F. Alexandre, A. Garreau, Richard Marins da Silva","doi":"10.1109/ICIPRM.2014.6880558","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880558","url":null,"abstract":"Improved-speed full-monolithic BPSK transmitter based on prefixed phase switching by fast Electro-Absorption Modulators has been realized on InP using a Selective Area Growth integrating circuit technology. It has been used in 80Gb/s multi-level BPSK format modulation experiments. Simplicity, speed scalability, ultra-small footprint and low power drive of the monolithic circuit are attractive for advanced format migration towards low-cost applications.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114698000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880543
F. Taleb, C. Levallois, C. Paranthoen, N. Chevalier, O. de Sagazan, A. Létoublon, O. Durand
We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.
{"title":"Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication","authors":"F. Taleb, C. Levallois, C. Paranthoen, N. Chevalier, O. de Sagazan, A. Létoublon, O. Durand","doi":"10.1109/ICIPRM.2014.6880543","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880543","url":null,"abstract":"We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133156273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880554
J. Landesman, J. Jiménez, V. Hortelano, Y. Léger, H. Folliot, T. Delhaye, A. Torres, A. Rhallabi
We have investigated the effects of reactive gases used during the deep reactive ion etching process of InP-based photonic structures in an inductively-coupled plasma (ICP) reactor. Samples with a specific structure, including 9 InAsP/InP quantum wells (QW) with graded As/P composition, were designed. Different chlorine-based gas chemistries were tested. Characterization was performed using cathodo-Iuminescence (CL) and photo-luminescence (PL) at different temperatures, and secondary ion mass spectrometry (SIMS). The luminescence lines display a blue shift upon exposure to the reactive gases, and a strong spectral sharpening. We discuss the influence of Cl diffusion and thermal processes during etching on these modifications.
{"title":"Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS","authors":"J. Landesman, J. Jiménez, V. Hortelano, Y. Léger, H. Folliot, T. Delhaye, A. Torres, A. Rhallabi","doi":"10.1109/ICIPRM.2014.6880554","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880554","url":null,"abstract":"We have investigated the effects of reactive gases used during the deep reactive ion etching process of InP-based photonic structures in an inductively-coupled plasma (ICP) reactor. Samples with a specific structure, including 9 InAsP/InP quantum wells (QW) with graded As/P composition, were designed. Different chlorine-based gas chemistries were tested. Characterization was performed using cathodo-Iuminescence (CL) and photo-luminescence (PL) at different temperatures, and secondary ion mass spectrometry (SIMS). The luminescence lines display a blue shift upon exposure to the reactive gases, and a strong spectral sharpening. We discuss the influence of Cl diffusion and thermal processes during etching on these modifications.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121839015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880515
T. Fujii, Tomonari Sato, K. Takeda, K. Hasebe, T. Kakitsuka, S. Matsuo
We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.
{"title":"InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer","authors":"T. Fujii, Tomonari Sato, K. Takeda, K. Hasebe, T. Kakitsuka, S. Matsuo","doi":"10.1109/ICIPRM.2014.6880515","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880515","url":null,"abstract":"We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126124478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880563
L. Czornomaz, N. Daix, E. Uccelli, D. Caimi, M. Sousa, C. Rossel, H. Siegwart, C. Marchiori, J. Fompeyrine
Direct wafer bonding can be a vehicle for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs. Like for SiGe, direct wafer bonding enable the fabrication of fully depleted transistors having superior electrostatic control over the channel. Hybrid substrates can be also fabricated by direct wafer bonding with stacked ultra-thin high-mobility layers. A process flow allows fabricating n- and p-channel field effect transistors with ultra-thin body and BOX on the same wafer. Working CMOS inverters are obtained using a common front-end.
{"title":"Co-integrating high mobility channels for future CMOS, from substrate to circuits","authors":"L. Czornomaz, N. Daix, E. Uccelli, D. Caimi, M. Sousa, C. Rossel, H. Siegwart, C. Marchiori, J. Fompeyrine","doi":"10.1109/ICIPRM.2014.6880563","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880563","url":null,"abstract":"Direct wafer bonding can be a vehicle for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs. Like for SiGe, direct wafer bonding enable the fabrication of fully depleted transistors having superior electrostatic control over the channel. Hybrid substrates can be also fabricated by direct wafer bonding with stacked ultra-thin high-mobility layers. A process flow allows fabricating n- and p-channel field effect transistors with ultra-thin body and BOX on the same wafer. Working CMOS inverters are obtained using a common front-end.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124950349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880574
H. Yagi, T. Kikuchi, N. Inoue, R. Masuyama, T. Katsuyama, K. Uesaka, Y. Yoneda, H. Shoji
Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.
{"title":"Highly reliable InP-based PIN-photodiode array monolithically integrated with 90° hybrid MMI using butt-joint regrowth","authors":"H. Yagi, T. Kikuchi, N. Inoue, R. Masuyama, T. Katsuyama, K. Uesaka, Y. Yoneda, H. Shoji","doi":"10.1109/ICIPRM.2014.6880574","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880574","url":null,"abstract":"Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132614510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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