Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880562
U. Troppenz, Michael Narodovitch, C. Kottke, G. Przyrembel, W. Molzow, A. Sigmund, H. Bach, M. Moehrle
1.3μm Electroabsorption Modulated DFB Lasers (EMLs) operating at 45°C are presented for higher order intensity modulation formats. The application of Pulse Amplitude Modulation (PAM) is experimentally demonstrated for PAM4/PAM8 coding at symbol rates of 28 GBd. With integrated impedance matching the low cost EML shows an increased optical modulation bandwidth of 40 GHz. NRZ eyes at 56 Gb/s have been measured with dynamic extinction ratio of > 9 dB which demonstrates the potential of the devices for PAM at higher symbol rates. The EML performance is discussed for application in single channel solutions of direct detection 100G atacomm systems.
{"title":"1.3 μm Electroabsorption Modulated lasers for PAM4/PAM8 single channel 100 Gb/s","authors":"U. Troppenz, Michael Narodovitch, C. Kottke, G. Przyrembel, W. Molzow, A. Sigmund, H. Bach, M. Moehrle","doi":"10.1109/ICIPRM.2014.6880562","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880562","url":null,"abstract":"1.3μm Electroabsorption Modulated DFB Lasers (EMLs) operating at 45°C are presented for higher order intensity modulation formats. The application of Pulse Amplitude Modulation (PAM) is experimentally demonstrated for PAM4/PAM8 coding at symbol rates of 28 GBd. With integrated impedance matching the low cost EML shows an increased optical modulation bandwidth of 40 GHz. NRZ eyes at 56 Gb/s have been measured with dynamic extinction ratio of > 9 dB which demonstrates the potential of the devices for PAM at higher symbol rates. The EML performance is discussed for application in single channel solutions of direct detection 100G atacomm systems.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125427636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880582
N. Nishiyama, S. Arai
Toward realization of on-chip photonic integrated circuits on LSI for high performance computing, membrane III-V optical devices on Si using BCB bonding have been proposed. Strong optical confinement due to high index contrast between the core and cladding layers gives low threshold and high efficiency operation of lasers. Using a lateral current injection structure, RT-CW operation was demonstrated. The structure could be applied for other optical devices such as waveguide-type photodetectors and wire waveguides.
{"title":"Membrane hybrid optical devices and related technologies toward on-Si photonic integrated circuits","authors":"N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880582","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880582","url":null,"abstract":"Toward realization of on-chip photonic integrated circuits on LSI for high performance computing, membrane III-V optical devices on Si using BCB bonding have been proposed. Strong optical confinement due to high index contrast between the core and cladding layers gives low threshold and high efficiency operation of lasers. Using a lateral current injection structure, RT-CW operation was demonstrated. The structure could be applied for other optical devices such as waveguide-type photodetectors and wire waveguides.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133232161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Calò, B. Robillart, Y. Gottesman, A. Fall, F. Lamare, K. Merghem, Anthony Martinez, A. Ramdane, Badr-Eddine Bcnkelfat
In the present work, we report on the spectral and temporal phase measurement capabilities of OFDR. Precise characterization of spectral phase information is demonstrated by retrieving the phase response of a commercial optical filter, the Finisar Waveshaper 1000 S/X programmable in attenuation and phase over C+L band (1530-1625 nm). Additionally, we demonstrate the high sensitivity of the technique to Doppler effects, enabling the use of OFDR for the characterization of dynamical aspects of optoelectronic components.
{"title":"Spectral and temporal phase measurement by optical frequency-domain reflectometry","authors":"C. Calò, B. Robillart, Y. Gottesman, A. Fall, F. Lamare, K. Merghem, Anthony Martinez, A. Ramdane, Badr-Eddine Bcnkelfat","doi":"10.1117/12.2039600","DOIUrl":"https://doi.org/10.1117/12.2039600","url":null,"abstract":"In the present work, we report on the spectral and temporal phase measurement capabilities of OFDR. Precise characterization of spectral phase information is demonstrated by retrieving the phase response of a commercial optical filter, the Finisar Waveshaper 1000 S/X programmable in attenuation and phase over C+L band (1530-1625 nm). Additionally, we demonstrate the high sensitivity of the technique to Doppler effects, enabling the use of OFDR for the characterization of dynamical aspects of optoelectronic components.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116490609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-06DOI: 10.1109/ICIPRM.2014.6880525
K. Okada, S. Suzuki, M. Asada
We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with slot-coupled patch antennas for extraction of output power without the use of Si lenses. By eliminating a usually used bulky Si lens, we obtained a compact room-temperature terahertz oscillator. A 170-μm square patch antenna was fabricated on a 7-μm-thick BCB layer stacked on an RTD with a slot resonator. The RTD oscillated at 500 GHz, and the output power of ~40 μW was radiated in the upward direction at the resonance of patch antenna coupled to the RTD and slot resonator. The measured radiation pattern reasonably agreed with theoretical analysis.
{"title":"Resonant-tunneling-diodeterahertz oscillator integrated with slot-coupled patch antenna","authors":"K. Okada, S. Suzuki, M. Asada","doi":"10.1109/ICIPRM.2014.6880525","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880525","url":null,"abstract":"We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with slot-coupled patch antennas for extraction of output power without the use of Si lenses. By eliminating a usually used bulky Si lens, we obtained a compact room-temperature terahertz oscillator. A 170-μm square patch antenna was fabricated on a 7-μm-thick BCB layer stacked on an RTD with a slot resonator. The RTD oscillated at 500 GHz, and the output power of ~40 μW was radiated in the upward direction at the resonance of patch antenna coupled to the RTD and slot resonator. The measured radiation pattern reasonably agreed with theoretical analysis.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128683828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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