Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880540
D. But, M. Sakhno, J. Oden, T. Notake, N. Dyakonova, D. Coquillat, F. Teppe, H. Minamide, C. Otani, W. Knap
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse was developed shows a good description match with experimental data. Our experimental results show that dynamic range of field effect transistors based terahertz detectors is very high and can extend from mW/cm2 up to kW/cm2.
{"title":"Detection of high intensity thz radiation by field effect transistors","authors":"D. But, M. Sakhno, J. Oden, T. Notake, N. Dyakonova, D. Coquillat, F. Teppe, H. Minamide, C. Otani, W. Knap","doi":"10.1109/ICIPRM.2014.6880540","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880540","url":null,"abstract":"Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse was developed shows a good description match with experimental data. Our experimental results show that dynamic range of field effect transistors based terahertz detectors is very high and can extend from mW/cm2 up to kW/cm2.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129467143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880535
B. Meunier, L. Louahadj, D. Le Bourdais, L. Largeau, G. Agnus, L. Mazet, R. Bachelet, P. Regreny, D. Albertini, V. Pillard, C. Dubourdieu, B. Gautier, P. Lecoeur, G. Saint-Girons
Ferroelectric epitaxial Pb(Zr, Ti)O3(PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.
{"title":"Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs","authors":"B. Meunier, L. Louahadj, D. Le Bourdais, L. Largeau, G. Agnus, L. Mazet, R. Bachelet, P. Regreny, D. Albertini, V. Pillard, C. Dubourdieu, B. Gautier, P. Lecoeur, G. Saint-Girons","doi":"10.1109/ICIPRM.2014.6880535","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880535","url":null,"abstract":"Ferroelectric epitaxial Pb(Zr, Ti)O3(PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129074592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880564
N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki
This paper reports current gain and high-frequency characteristics of InP DHBTs with a passivation ledge and various emitter sizes. With the passivation ledge, current gain of over 40 is maintained even for a 0.25-μm-emitter HBT. The ft is over 420 GHz for HBTs with emitters ranging from 0.25 to 0.5 μm. On the other hand, the fmax greatly increases from 320 to 440 GHz with decreasing emitter width from 0.5 to 0.25 μm. These results indicate that the 0.25-μm-emitter HBT exhibits balanced high-frequency performance (ft= 449 GHz and fmax= 440 GHz) while maintaining a current gain of over 40.
{"title":"High-current-gain InP DHBTs with a passivation ledge demonstrating ft and fmax of over 440 GHz","authors":"N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki","doi":"10.1109/ICIPRM.2014.6880564","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880564","url":null,"abstract":"This paper reports current gain and high-frequency characteristics of InP DHBTs with a passivation ledge and various emitter sizes. With the passivation ledge, current gain of over 40 is maintained even for a 0.25-μm-emitter HBT. The f<sub>t</sub> is over 420 GHz for HBTs with emitters ranging from 0.25 to 0.5 μm. On the other hand, the f<sub>max</sub> greatly increases from 320 to 440 GHz with decreasing emitter width from 0.5 to 0.25 μm. These results indicate that the 0.25-μm-emitter HBT exhibits balanced high-frequency performance (f<sub>t</sub>= 449 GHz and f<sub>max</sub>= 440 GHz) while maintaining a current gain of over 40.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130282543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880539
C. Arellano, A. Richter, S. Mingaleev, I. Koltchanov, C. Kazmierski
We present a detailed circuit model for a monolithic integrated InP transmitter and its application for the study of technological limitations such the impact of non-ideal phase shifters and reflections at interfaces.
{"title":"Modeling and tolerance analysis of monolithic InP-based dual polarization QPSK transmitter","authors":"C. Arellano, A. Richter, S. Mingaleev, I. Koltchanov, C. Kazmierski","doi":"10.1109/ICIPRM.2014.6880539","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880539","url":null,"abstract":"We present a detailed circuit model for a monolithic integrated InP transmitter and its application for the study of technological limitations such the impact of non-ideal phase shifters and reflections at interfaces.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133031945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880553
Jiongjiong Mo, E. Lind, L. Wernersson
Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain gm/gd has been obtained with reduced output conductance gd and improved break-down voltage Vbd. For Lg=100nm, a high oscillation frequency fmax=270GHz has been obtained using an InP drain.
{"title":"Asymmetric InGaAs MOSFETs with InGaAs source and InP drain","authors":"Jiongjiong Mo, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2014.6880553","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880553","url":null,"abstract":"Asymmetric In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs with different regrown contacts at source (In<sub>0.53</sub>Ga<sub>0.47</sub>As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g<sub>m</sub>/g<sub>d</sub> has been obtained with reduced output conductance g<sub>d</sub> and improved break-down voltage V<sub>bd</sub>. For L<sub>g</sub>=100nm, a high oscillation frequency f<sub>max</sub>=270GHz has been obtained using an InP drain.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132892656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880518
Misa Kuramochi, M. Takenaka, Y. Ikku, S. Takagi
We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.
{"title":"Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform","authors":"Misa Kuramochi, M. Takenaka, Y. Ikku, S. Takagi","doi":"10.1109/ICIPRM.2014.6880518","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880518","url":null,"abstract":"We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134342843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880521
S. Seifert, P. Runge
For several compositions of In1-xGaxAsyP1-y lattice-matched to InP spectroscopic measurements were made. With the help of the Tanguy model, the refractive indices are calculated in the infrared transparent and absorption region. From these measurements general parameters for the Tanguy model are derived for the In1-xGaxAsyP1-y material system lattice-matched to InP.
{"title":"Refractive index of In1−xGaxAsyP1−y lattice-matched to InP in IR-transparent and absorption region","authors":"S. Seifert, P. Runge","doi":"10.1109/ICIPRM.2014.6880521","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880521","url":null,"abstract":"For several compositions of In<sub>1-x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub> lattice-matched to InP spectroscopic measurements were made. With the help of the Tanguy model, the refractive indices are calculated in the infrared transparent and absorption region. From these measurements general parameters for the Tanguy model are derived for the In<sub>1-x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub> material system lattice-matched to InP.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114224080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880565
Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, S. Shiba, N. Hara
Highly sensitive p-GaAsSb/i-InAlAs/n-InGaAs backward diodes up to 170 GHz were achieved by adopting planar doping in the n-InGaAs layer. The planar doping is effective to control interband tunneling and junction capacitance (Cj) in the diodes. When doping concentration in the n-InGaAs layer was reduced to 1 × 1017 cm-3, backward-diode characteristics were obtained when planar doping was 2 × 1012 cm-2. We achieved an unmatched and matched sensitivity of about 1,000 and 2,257 V/Wusing a relatively large mesa size of 2 × 2 μm2 at 170 GHz.
{"title":"Highly sensitive planar-doped GaAsSb-based backward diodes at 170 GHz","authors":"Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, S. Shiba, N. Hara","doi":"10.1109/ICIPRM.2014.6880565","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880565","url":null,"abstract":"Highly sensitive p-GaAsSb/i-InAlAs/n-InGaAs backward diodes up to 170 GHz were achieved by adopting planar doping in the n-InGaAs layer. The planar doping is effective to control interband tunneling and junction capacitance (C<sub>j</sub>) in the diodes. When doping concentration in the n-InGaAs layer was reduced to 1 × 10<sup>17</sup> cm<sup>-3</sup>, backward-diode characteristics were obtained when planar doping was 2 × 10<sup>12</sup> cm<sup>-2</sup>. We achieved an unmatched and matched sensitivity of about 1,000 and 2,257 V/Wusing a relatively large mesa size of 2 × 2 μm<sup>2</sup> at 170 GHz.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123083504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880583
K. Pantzas, G. Patriarche, A. Talneau, J. Ben Youssef
Direct bonding of Yttrium Iron Garnet on Si without any intermediate layer is demonstrated and characterized using Scanning Transmission Electron Microscopy. Such geometry of the hybrid stack with no layer in between the magneto-optic garnet film and the Si guiding layer opens the route for highly efficient hybrid isolators.
{"title":"Direct bonding of YIG film on Si without intermediate layer","authors":"K. Pantzas, G. Patriarche, A. Talneau, J. Ben Youssef","doi":"10.1109/ICIPRM.2014.6880583","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880583","url":null,"abstract":"Direct bonding of Yttrium Iron Garnet on Si without any intermediate layer is demonstrated and characterized using Scanning Transmission Electron Microscopy. Such geometry of the hybrid stack with no layer in between the magneto-optic garnet film and the Si guiding layer opens the route for highly efficient hybrid isolators.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131778195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880520
Takumi Yoshida, M. Yukinari, Takaaki Kaneko, N. Nishiyama, S. Arai
Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.
{"title":"Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser — Dependence of the base layer structure","authors":"Takumi Yoshida, M. Yukinari, Takaaki Kaneko, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2014.6880520","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880520","url":null,"abstract":"Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127618033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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