Pub Date : 2022-02-24DOI: 10.3390/electronicmat3010009
Hongxu Huang, Lijing Li, Yu-Ting Ma, Ming-jie Sun
Computational ghost imaging, as an alternative photoelectric imaging technology, uses a single-pixel detector with no spatial resolution to capture information and reconstruct the image of a scene. Due to its essentially temporal measurement manner, improving the image frame rate is always a major concern in the research of computational ghost imaging technology. By taking advantage of the fast switching time of LED, an LED array was developed to provide a structured illumination light source in our work, which significantly improves the structured illumination rate in the computational ghost imaging system. The design of the LED array driver circuit presented in this work makes full use of the LED switching time and achieves a pattern displaying rate of 12.5 MHz. Continuous images with 32 × 32 pixel resolution are reconstructed at a frame rate of 25,000 fps, which is approximately 500 times faster than what a universally used digital micromirror device can achieve. The LED array presented in this work can potentially be applied to other techniques requiring high-speed structured illumination, such as fringe 3D profiling and array-based LIFI.
{"title":"25,000 fps Computational Ghost Imaging with Ultrafast Structured Illumination","authors":"Hongxu Huang, Lijing Li, Yu-Ting Ma, Ming-jie Sun","doi":"10.3390/electronicmat3010009","DOIUrl":"https://doi.org/10.3390/electronicmat3010009","url":null,"abstract":"Computational ghost imaging, as an alternative photoelectric imaging technology, uses a single-pixel detector with no spatial resolution to capture information and reconstruct the image of a scene. Due to its essentially temporal measurement manner, improving the image frame rate is always a major concern in the research of computational ghost imaging technology. By taking advantage of the fast switching time of LED, an LED array was developed to provide a structured illumination light source in our work, which significantly improves the structured illumination rate in the computational ghost imaging system. The design of the LED array driver circuit presented in this work makes full use of the LED switching time and achieves a pattern displaying rate of 12.5 MHz. Continuous images with 32 × 32 pixel resolution are reconstructed at a frame rate of 25,000 fps, which is approximately 500 times faster than what a universally used digital micromirror device can achieve. The LED array presented in this work can potentially be applied to other techniques requiring high-speed structured illumination, such as fringe 3D profiling and array-based LIFI.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"190 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72724640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-31DOI: 10.20944/preprints202201.0448.v1
I. Capan
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC material. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS) and minority carrier transient spectroscopy (MCTS) have led to recent progress in identifying and better understanding of the charge carrier traps in n-type 4H-SiC material.
{"title":"Majority and Minority Charge Carrier Traps in n-type 4H-SiC Studied by Junction Spectroscopy Techniques","authors":"I. Capan","doi":"10.20944/preprints202201.0448.v1","DOIUrl":"https://doi.org/10.20944/preprints202201.0448.v1","url":null,"abstract":"In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC material. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS) and minority carrier transient spectroscopy (MCTS) have led to recent progress in identifying and better understanding of the charge carrier traps in n-type 4H-SiC material.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82049163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-25DOI: 10.3390/electronicmat3010006
Rigorous peer-reviews are the basis of high-quality academic publishing [...]
严格的同行评议是高质量学术出版的基础[…]
{"title":"Acknowledgment to Reviewers of Electronic Materials in 2021","authors":"","doi":"10.3390/electronicmat3010006","DOIUrl":"https://doi.org/10.3390/electronicmat3010006","url":null,"abstract":"Rigorous peer-reviews are the basis of high-quality academic publishing [...]","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81529370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-17DOI: 10.3390/electronicmat3010007
Amir Dayan, Yi Huang, A. Schuchinsky
Passive intermodulation (PIM) is a niggling phenomenon that debilitates the performance of modern communications and navigation systems. PIM products interfere with information signals and cause their nonlinear distortion. The sources and basic mechanisms of PIM have been studied in the literature but PIM remains a serious problem of signal integrity. In this paper, the main sources and mechanisms of PIM generation by joints of good conductors are discussed. It is shown that the passive electrical, thermal and mechanical nonlinearities are intrinsically linked despite their distinctively different time scales. The roughness of the contact surfaces plays an important role in PIM generation by conductor joints. A review of the PIM phenomenology at the contacts of the good conductors suggests that novel multiphysics models are necessary for the analysis and reliable prediction of PIM products generated by several concurrent nonlinearities of a diverse physical nature.
{"title":"Passive Intermodulation at Contacts of Rough Conductors","authors":"Amir Dayan, Yi Huang, A. Schuchinsky","doi":"10.3390/electronicmat3010007","DOIUrl":"https://doi.org/10.3390/electronicmat3010007","url":null,"abstract":"Passive intermodulation (PIM) is a niggling phenomenon that debilitates the performance of modern communications and navigation systems. PIM products interfere with information signals and cause their nonlinear distortion. The sources and basic mechanisms of PIM have been studied in the literature but PIM remains a serious problem of signal integrity. In this paper, the main sources and mechanisms of PIM generation by joints of good conductors are discussed. It is shown that the passive electrical, thermal and mechanical nonlinearities are intrinsically linked despite their distinctively different time scales. The roughness of the contact surfaces plays an important role in PIM generation by conductor joints. A review of the PIM phenomenology at the contacts of the good conductors suggests that novel multiphysics models are necessary for the analysis and reliable prediction of PIM products generated by several concurrent nonlinearities of a diverse physical nature.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"78 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86831945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-14DOI: 10.3390/electronicmat3010005
Hari Chandra Nayak, Shivendra Singh Parmar, R. P. Kumhar, S. Rajput
In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The thin films were grown by the isothermal solution casting technique. Dielectric properties of grown films were studied as function of ferrocene concentration, frequency, and temperature. The relative permittivity (ε′) is increased with increasing ferrocene percentage (~1%) due to the free charge carriers. The relative permittivity decreases for higher ferrocene percentage (~2%). However, the relative permittivity of PVK and ferrocene-doped PVK samples remains almost constant for studied temperature range (313–413 K). The frequency dependence of tan δ for all samples is studied. The frequency dependence of dielectric parameter exhibits frequency dispersion behavior, which suggests all types of polarization present in the lower frequency range. The loss tangent (tanδ) values are larger at higher temperatures in the low frequency region. However, the tan δ values at different temperatures are almost similar in the high frequency region. It is observed that the relative permittivity is maximum, dielectric loss is minimum, and AC conductivity is minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene doped PVK samples.
{"title":"Modulation in Electric Conduction of PVK and Ferrocene-Doped PVK Thin Films","authors":"Hari Chandra Nayak, Shivendra Singh Parmar, R. P. Kumhar, S. Rajput","doi":"10.3390/electronicmat3010005","DOIUrl":"https://doi.org/10.3390/electronicmat3010005","url":null,"abstract":"In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The thin films were grown by the isothermal solution casting technique. Dielectric properties of grown films were studied as function of ferrocene concentration, frequency, and temperature. The relative permittivity (ε′) is increased with increasing ferrocene percentage (~1%) due to the free charge carriers. The relative permittivity decreases for higher ferrocene percentage (~2%). However, the relative permittivity of PVK and ferrocene-doped PVK samples remains almost constant for studied temperature range (313–413 K). The frequency dependence of tan δ for all samples is studied. The frequency dependence of dielectric parameter exhibits frequency dispersion behavior, which suggests all types of polarization present in the lower frequency range. The loss tangent (tanδ) values are larger at higher temperatures in the low frequency region. However, the tan δ values at different temperatures are almost similar in the high frequency region. It is observed that the relative permittivity is maximum, dielectric loss is minimum, and AC conductivity is minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene doped PVK samples.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80552617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-10DOI: 10.3390/electronicmat3010002
Argyris Tilemachou, M. Zervos, A. Othonos, Th. Pavloudis, J. Kioseoglou
Cu3N with a cubic crystal structure is obtained in this paper by the sputtering of Cu under N2 followed by annealing under NH3: H2 at 400 °C, after which it was doped with iodine at room temperature resulting into p-type Cu3N with hole densities between 1016 and 1017 cm−3. The Cu3N exhibited distinct maxima in differential transmission at ~2.01 eV and 1.87 eV as shown by ultrafast pump-probe spectroscopy, corresponding to the M and R direct energy band gaps in excellent agreement with density functional theory calculations, suggesting that the band gap is clean and free of mid-gap states. The Cu3N was gradually converted into optically transparent γ-CuI that had a hole density of 4 × 1017 cm−3, mobility of 12 cm2/Vs and room temperature photoluminescence at 3.1 eV corresponding to its direct energy band gap. We describe the fabrication and properties of γ-CuI/TiO2/Cu3N and γ-CuI/Cu3N p-n heterojunctions that exhibited rectifying current-voltage characteristics, but no photogenerated current attributed to indirect recombination via shallow states in Cu3N and/or deep states in the γ-CuI consistent with the short (ps) lifetimes of the photoexcited electrons-holes determined from transient absorption–transmission spectroscopy.
{"title":"p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions","authors":"Argyris Tilemachou, M. Zervos, A. Othonos, Th. Pavloudis, J. Kioseoglou","doi":"10.3390/electronicmat3010002","DOIUrl":"https://doi.org/10.3390/electronicmat3010002","url":null,"abstract":"Cu3N with a cubic crystal structure is obtained in this paper by the sputtering of Cu under N2 followed by annealing under NH3: H2 at 400 °C, after which it was doped with iodine at room temperature resulting into p-type Cu3N with hole densities between 1016 and 1017 cm−3. The Cu3N exhibited distinct maxima in differential transmission at ~2.01 eV and 1.87 eV as shown by ultrafast pump-probe spectroscopy, corresponding to the M and R direct energy band gaps in excellent agreement with density functional theory calculations, suggesting that the band gap is clean and free of mid-gap states. The Cu3N was gradually converted into optically transparent γ-CuI that had a hole density of 4 × 1017 cm−3, mobility of 12 cm2/Vs and room temperature photoluminescence at 3.1 eV corresponding to its direct energy band gap. We describe the fabrication and properties of γ-CuI/TiO2/Cu3N and γ-CuI/Cu3N p-n heterojunctions that exhibited rectifying current-voltage characteristics, but no photogenerated current attributed to indirect recombination via shallow states in Cu3N and/or deep states in the γ-CuI consistent with the short (ps) lifetimes of the photoexcited electrons-holes determined from transient absorption–transmission spectroscopy.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79724379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-10DOI: 10.3390/electronicmat3010003
A. Kaloyeros, Jonathan Goff, Barry Arkles
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.
{"title":"Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane","authors":"A. Kaloyeros, Jonathan Goff, Barry Arkles","doi":"10.3390/electronicmat3010003","DOIUrl":"https://doi.org/10.3390/electronicmat3010003","url":null,"abstract":"Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85587393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.3897/j.moem.7.4.78587
A. A. Kharchenko, J. Fedotova, Valeryia Yu. Slabukho, A. Fedotov, A. Pashkevich, I. Svito, M. Bushinsky
Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ(Т,В) and the Hall constant Rh(Т,В) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ(Т,В) and Rh(Т,В) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σа (Т) – σс (Т)]/σс (Т) below 50–70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields.
{"title":"Electrical and galvanomagnetic properties of black phosphorus single crystals","authors":"A. A. Kharchenko, J. Fedotova, Valeryia Yu. Slabukho, A. Fedotov, A. Pashkevich, I. Svito, M. Bushinsky","doi":"10.3897/j.moem.7.4.78587","DOIUrl":"https://doi.org/10.3897/j.moem.7.4.78587","url":null,"abstract":"Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ(Т,В) and the Hall constant Rh(Т,В) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ(Т,В) and Rh(Т,В) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σа (Т) – σс (Т)]/σс (Т) below 50–70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74397632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.3897/j.moem.7.4.78569
A. Shportenko, A. Kislyuk, A. Turutin, I. Kubasov, M. Malinkovich, Y. Parkhomenko
Lithium niobate is a ferroelectric material finding a wide range of applications in optical and acoustic engineering. Annealing of lithium niobate crystals in an oxygen-free environment leads to appearance of black coloration and concomitant increasing electrical conductivity due to chemical reduction. There are plenty of literary data on the electrophysical properties of reduced lithium niobate crystals though contact phenomena occurring during electrical conductivity measurement as well as issues of interaction between the electrode material and the test specimens are almost disregarded. The effect of chromium and indium tin oxide electrodes on the results of measurements of electrophysical parameters at room temperature for lithium niobate specimens reduced at 1100 °C has been investigated. It was found that significant nonlinearities in the VACs of the specimens at below 5 V distort the specific resistivity readings for lithium niobate. This requires measurements at higher voltages. Impedance spectroscopy studies have shown that the measurement results are largely affected by capacities including those probably induced near the contacts. It has been shown that the experimental results are described adequately well by a model implying the presence of near-contact capacities that are parallel to the specimen’s own capacity. Possible mechanism of the induction of these capacities has been described and a hypothesis has been proposed of the high density of electron states at the electrode/specimen interface that can trap carriers, the concentration of trapped carriers growing with an increase in annealing duration.
{"title":"Effect of contact phenomena on the electrical conductivity of reduced lithium niobate","authors":"A. Shportenko, A. Kislyuk, A. Turutin, I. Kubasov, M. Malinkovich, Y. Parkhomenko","doi":"10.3897/j.moem.7.4.78569","DOIUrl":"https://doi.org/10.3897/j.moem.7.4.78569","url":null,"abstract":"Lithium niobate is a ferroelectric material finding a wide range of applications in optical and acoustic engineering. Annealing of lithium niobate crystals in an oxygen-free environment leads to appearance of black coloration and concomitant increasing electrical conductivity due to chemical reduction. There are plenty of literary data on the electrophysical properties of reduced lithium niobate crystals though contact phenomena occurring during electrical conductivity measurement as well as issues of interaction between the electrode material and the test specimens are almost disregarded. The effect of chromium and indium tin oxide electrodes on the results of measurements of electrophysical parameters at room temperature for lithium niobate specimens reduced at 1100 °C has been investigated. It was found that significant nonlinearities in the VACs of the specimens at below 5 V distort the specific resistivity readings for lithium niobate. This requires measurements at higher voltages. Impedance spectroscopy studies have shown that the measurement results are largely affected by capacities including those probably induced near the contacts. It has been shown that the experimental results are described adequately well by a model implying the presence of near-contact capacities that are parallel to the specimen’s own capacity. Possible mechanism of the induction of these capacities has been described and a hypothesis has been proposed of the high density of electron states at the electrode/specimen interface that can trap carriers, the concentration of trapped carriers growing with an increase in annealing duration.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83840088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-30DOI: 10.3897/j.moem.7.4.81721
A. Naumov, D. L. Orehov
The current condition and outlooks of the world semiconductor and polycrystalline silicon (poly-Si) markets have been analyzed. A long period of low PS prices which hindered the growth of investments into the industry has now changed for price recovery to an investment attractive level. Demand and offer balance for the period until 2024 and for the long term has been analyzed, and the main currently used PS processes have been reviewed. The current poly-Si market proficiency is expected to remain in the near and medium terms. However the “green turn” of the energy industry announced by all the governments, the development of local markets and the price recovery to an investment attractive level have promoted the development of new PS fab projects. Of special importance for Russia is the choice of Siemens trichlorosilane process parameters. A specific feature of the Russian market is the presence of several very important fields (solar energy, microelectronics, high-power electronics, photonics and fiber optics) which are small by international standards and equally face raw material shortage. It appears that Russia will greatly benefit from integral projects delivering solutions of multiple raw materials supply problems.
{"title":"The modern phase of the polysilicon market","authors":"A. Naumov, D. L. Orehov","doi":"10.3897/j.moem.7.4.81721","DOIUrl":"https://doi.org/10.3897/j.moem.7.4.81721","url":null,"abstract":"The current condition and outlooks of the world semiconductor and polycrystalline silicon (poly-Si) markets have been analyzed. A long period of low PS prices which hindered the growth of investments into the industry has now changed for price recovery to an investment attractive level. Demand and offer balance for the period until 2024 and for the long term has been analyzed, and the main currently used PS processes have been reviewed. The current poly-Si market proficiency is expected to remain in the near and medium terms. However the “green turn” of the energy industry announced by all the governments, the development of local markets and the price recovery to an investment attractive level have promoted the development of new PS fab projects. Of special importance for Russia is the choice of Siemens trichlorosilane process parameters. A specific feature of the Russian market is the presence of several very important fields (solar energy, microelectronics, high-power electronics, photonics and fiber optics) which are small by international standards and equally face raw material shortage. It appears that Russia will greatly benefit from integral projects delivering solutions of multiple raw materials supply problems.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"90 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91455059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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