Pub Date : 2024-05-24DOI: 10.1038/s41928-024-01174-4
Wenyu Wang, Yifei Pan, Yuan Shui, Tawfique Hasan, Iek Man Lei, Stanley Gong Sheng Ka, Thierry Savin, Santiago Velasco-Bosom, Yang Cao, Susannah B. P. McLaren, Yuze Cao, Fengzhu Xiong, George G. Malliaras, Yan Yan Shery Huang
The functional and sensory augmentation of living structures, such as human skin and plant epidermis, with electronics can be used to create platforms for health management and environmental monitoring. Ideally, such bioelectronic interfaces should not obstruct the inherent sensations and physiological changes of their hosts. The full life cycle of the interfaces should also be designed to minimize their environmental footprint. Here we report imperceptible augmentation of living systems through in situ tethering of organic bioelectronic fibres. Using an orbital spinning technique, substrate-free and open fibre networks—which are based on poly (3,4-ethylenedioxythiophene):polystyrene sulfonate—can be tethered to biological surfaces, including fingertips, chick embryos and plants. We use customizable fibre networks to create on-skin electrodes that can record electrocardiogram and electromyography signals, skin-gated organic electrochemical transistors and augmented touch and plant interfaces. We also show that the fibres can be used to couple prefabricated microelectronics and electronic textiles, and that the fibres can be repaired, upgraded and recycled. With the help of an orbital spinning technique, substrate-free open networks of imperceptible fibres can be created on a range of biological surfaces, providing on-skin sensors that can record electrocardiogram signals, skin-gated organic electrochemical transistors, and augmented touch and plant interfaces.
{"title":"Imperceptible augmentation of living systems with organic bioelectronic fibres","authors":"Wenyu Wang, Yifei Pan, Yuan Shui, Tawfique Hasan, Iek Man Lei, Stanley Gong Sheng Ka, Thierry Savin, Santiago Velasco-Bosom, Yang Cao, Susannah B. P. McLaren, Yuze Cao, Fengzhu Xiong, George G. Malliaras, Yan Yan Shery Huang","doi":"10.1038/s41928-024-01174-4","DOIUrl":"10.1038/s41928-024-01174-4","url":null,"abstract":"The functional and sensory augmentation of living structures, such as human skin and plant epidermis, with electronics can be used to create platforms for health management and environmental monitoring. Ideally, such bioelectronic interfaces should not obstruct the inherent sensations and physiological changes of their hosts. The full life cycle of the interfaces should also be designed to minimize their environmental footprint. Here we report imperceptible augmentation of living systems through in situ tethering of organic bioelectronic fibres. Using an orbital spinning technique, substrate-free and open fibre networks—which are based on poly (3,4-ethylenedioxythiophene):polystyrene sulfonate—can be tethered to biological surfaces, including fingertips, chick embryos and plants. We use customizable fibre networks to create on-skin electrodes that can record electrocardiogram and electromyography signals, skin-gated organic electrochemical transistors and augmented touch and plant interfaces. We also show that the fibres can be used to couple prefabricated microelectronics and electronic textiles, and that the fibres can be repaired, upgraded and recycled. With the help of an orbital spinning technique, substrate-free open networks of imperceptible fibres can be created on a range of biological surfaces, providing on-skin sensors that can record electrocardiogram signals, skin-gated organic electrochemical transistors, and augmented touch and plant interfaces.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01174-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141091968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-22DOI: 10.1038/s41928-024-01173-5
Sebastian Fernández, Manchen Hu, Daniel N. Congreve
Photoresponsive perovskite light-emitting diodes can be used to build multifunctional displays that can function as touch screens, light sensors and image sensors.
光致发光过氧化物发光二极管可用于制造多功能显示器，可用作触摸屏、光传感器和图像传感器。
{"title":"Multifunctional displays with perovskite semiconductors","authors":"Sebastian Fernández, Manchen Hu, Daniel N. Congreve","doi":"10.1038/s41928-024-01173-5","DOIUrl":"10.1038/s41928-024-01173-5","url":null,"abstract":"Photoresponsive perovskite light-emitting diodes can be used to build multifunctional displays that can function as touch screens, light sensors and image sensors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141079059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-22DOI: 10.1038/s41928-024-01172-6
Hiroshi Suga
Non-volatile memory devices capable of recording and reading information at temperatures up to 600 °C can be built using aluminium scandium nitride ferroelectric diodes.
利用氮化钪铝铁电二极管可以制造出能够在高达 600 °C 的温度下记录和读取信息的非易失性存储器件。
{"title":"High-temperature non-volatile memory technology","authors":"Hiroshi Suga","doi":"10.1038/s41928-024-01172-6","DOIUrl":"10.1038/s41928-024-01172-6","url":null,"abstract":"Non-volatile memory devices capable of recording and reading information at temperatures up to 600 °C can be built using aluminium scandium nitride ferroelectric diodes.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141079113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-22DOI: 10.1038/s41928-024-01167-3
J. Tyler Gish, Dmitry Lebedev, Thomas W. Song, Vinod K. Sangwan, Mark C. Hersam
Van der Waals materials with long-range magnetic order show a range of correlated phenomena that could be of use in the development of optoelectronic and spintronic applications. Magnetically ordered van der Waals semiconductors with spin-polarized currents are, in particular, sensitive to external stimuli such as strain, electrostatic fields, magnetic fields and electromagnetic radiation. Their combination of two-dimensional magnetic order, semiconducting band structure and weak dielectric screening means that these materials could be used to create novel atomically thin opto-spintronic devices. Here we explore the development of van der Waals opto-spintronics. We examine the interplay between optical, magnetic and electronic excitations in van der Waals magnetic semiconductors, and explore the control of their magnetization via external stimuli. We consider fabrication and passivation strategies for the practical handling and design of opto-spintronic devices. We also explore potential opto-spintronic device architectures and applications, which include magnonics, quantum transduction, neuromorphic computing and non-volatile memory. This Review examines the development of van der Waals opto-spintronic devices, highlighting the importance of light–matter interactions in van der Waals magnetic materials and the control of their magnetization via external stimuli, as well as exploring potential opto-spintronic device architectures and applications.
{"title":"Van der Waals opto-spintronics","authors":"J. Tyler Gish, Dmitry Lebedev, Thomas W. Song, Vinod K. Sangwan, Mark C. Hersam","doi":"10.1038/s41928-024-01167-3","DOIUrl":"10.1038/s41928-024-01167-3","url":null,"abstract":"Van der Waals materials with long-range magnetic order show a range of correlated phenomena that could be of use in the development of optoelectronic and spintronic applications. Magnetically ordered van der Waals semiconductors with spin-polarized currents are, in particular, sensitive to external stimuli such as strain, electrostatic fields, magnetic fields and electromagnetic radiation. Their combination of two-dimensional magnetic order, semiconducting band structure and weak dielectric screening means that these materials could be used to create novel atomically thin opto-spintronic devices. Here we explore the development of van der Waals opto-spintronics. We examine the interplay between optical, magnetic and electronic excitations in van der Waals magnetic semiconductors, and explore the control of their magnetization via external stimuli. We consider fabrication and passivation strategies for the practical handling and design of opto-spintronic devices. We also explore potential opto-spintronic device architectures and applications, which include magnonics, quantum transduction, neuromorphic computing and non-volatile memory. This Review examines the development of van der Waals opto-spintronic devices, highlighting the importance of light–matter interactions in van der Waals magnetic materials and the control of their magnetization via external stimuli, as well as exploring potential opto-spintronic device architectures and applications.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141079080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-21DOI: 10.1038/s41928-024-01165-5
Ravindra Naik Bukke, Olga A. Syzgantseva, Maria A. Syzgantseva, Konstantinos Aidinis, Anastasia Soultati, Apostolis Verykios, Marinos Tountas, Vassilis Psycharis, Thamraa Alshahrani, Habib Ullah, Leandros P. Zorba, Georgios C. Vougioukalakis, Jianxiao Wang, Xichang Bao, Jin Jang, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou, Abd. Rashid bin Mohd Yusoff
The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V−1 s−1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipolar lead halide perovskites are potential candidates, but their defective nature limits electron mobilities to around 3–4 cm2 V−1 s−1, which makes the development of all-perovskite logic circuits challenging. Here we report formamidinium lead iodide perovskite n-type transistors with field-effect mobilities of up to 33 cm2 V−1 s−1 measured in continuous bias mode. This is achieved through strain relaxation of the perovskite lattice using a methylammonium chloride additive, followed by suppression of undercoordinated lead through tetramethylammonium fluoride multidentate anchoring. Our approach stabilizes the alpha phase, balances strain and improves surface morphology, crystallinity and orientation. It also enables low-defect perovskite–dielectric interfaces. We use the transistors to fabricate unipolar inverters and eleven-stage ring oscillators. The use of additives in the fabrication of solution-processed n-type perovskite transistors alleviates lattice strain and suppresses undercoordinated lead, boosting the charge transport properties of the devices and making them suitable for use in complementary circuit applications.
通过对卤化锡包晶石进行工程研究，开发出了场效应迁移率超过 70 cm2 V-1 s-1 的 p 型晶体管。然而，由于其背景空穴掺杂，这些过氧化物晶石并不适用于 n 型晶体管。反极性卤化铅包晶石是潜在的候选材料，但其缺陷性将电子迁移率限制在 3-4 cm2 V-1 s-1 左右，这使得开发全包晶石逻辑电路具有挑战性。在这里，我们报告了在连续偏压模式下测量到的场效应迁移率高达 33 cm2 V-1 s-1 的甲脒碘化铅包晶 n 型晶体管。这是通过使用甲基氯化铵添加剂使包晶石晶格产生应变松弛，然后通过四甲基氟化铵多叉锚定抑制欠配位铅而实现的。我们的方法稳定了α相，平衡了应变，改善了表面形态、结晶度和取向。它还实现了低缺陷的透辉石-介电界面。我们利用这种晶体管制造单极逆变器和十一级环形振荡器。
{"title":"Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits","authors":"Ravindra Naik Bukke, Olga A. Syzgantseva, Maria A. Syzgantseva, Konstantinos Aidinis, Anastasia Soultati, Apostolis Verykios, Marinos Tountas, Vassilis Psycharis, Thamraa Alshahrani, Habib Ullah, Leandros P. Zorba, Georgios C. Vougioukalakis, Jianxiao Wang, Xichang Bao, Jin Jang, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou, Abd. Rashid bin Mohd Yusoff","doi":"10.1038/s41928-024-01165-5","DOIUrl":"10.1038/s41928-024-01165-5","url":null,"abstract":"The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V−1 s−1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipolar lead halide perovskites are potential candidates, but their defective nature limits electron mobilities to around 3–4 cm2 V−1 s−1, which makes the development of all-perovskite logic circuits challenging. Here we report formamidinium lead iodide perovskite n-type transistors with field-effect mobilities of up to 33 cm2 V−1 s−1 measured in continuous bias mode. This is achieved through strain relaxation of the perovskite lattice using a methylammonium chloride additive, followed by suppression of undercoordinated lead through tetramethylammonium fluoride multidentate anchoring. Our approach stabilizes the alpha phase, balances strain and improves surface morphology, crystallinity and orientation. It also enables low-defect perovskite–dielectric interfaces. We use the transistors to fabricate unipolar inverters and eleven-stage ring oscillators. The use of additives in the fabrication of solution-processed n-type perovskite transistors alleviates lattice strain and suppresses undercoordinated lead, boosting the charge transport properties of the devices and making them suitable for use in complementary circuit applications.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141073852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-20DOI: 10.1038/s41928-024-01169-1
Sangmin Yoo, Sieun Chae, Tony Chiang, Matthew Webb, Tao Ma, Hanjong Paik, Yongmo Park, Logan Williams, Kazuki Nomoto, Huili G. Xing, Susan Trolier-McKinstry, Emmanouil Kioupakis, John T. Heron, Wei D. Lu
Memristive devices are of potential use in a range of computing applications. However, many of these devices are based on amorphous materials, where systematic control of the switching dynamics is challenging. Here we report tunable and stable memristors based on an entropy-stabilized oxide. We use single-crystalline (Mg,Co,Ni,Cu,Zn)O films grown on an epitaxial bottom electrode. By adjusting the magnesium composition (XMg = 0.11–0.27) of the entropy-stabilized oxide films, a range of internal time constants (159–278 ns) for the switching process can be obtained. We use the memristors to create a reservoir computing network that classifies time-series input data and show that the reservoir computing system, which has tunable reservoirs, offers better classification accuracy and energy efficiency than previous reservoir system implementations. Tunable and stable memristors based on single-crystalline entropy-stabilized oxide films grown on epitaxial bottom electrodes can be used to create energy-efficient reservoir computing networks.
{"title":"Efficient data processing using tunable entropy-stabilized oxide memristors","authors":"Sangmin Yoo, Sieun Chae, Tony Chiang, Matthew Webb, Tao Ma, Hanjong Paik, Yongmo Park, Logan Williams, Kazuki Nomoto, Huili G. Xing, Susan Trolier-McKinstry, Emmanouil Kioupakis, John T. Heron, Wei D. Lu","doi":"10.1038/s41928-024-01169-1","DOIUrl":"10.1038/s41928-024-01169-1","url":null,"abstract":"Memristive devices are of potential use in a range of computing applications. However, many of these devices are based on amorphous materials, where systematic control of the switching dynamics is challenging. Here we report tunable and stable memristors based on an entropy-stabilized oxide. We use single-crystalline (Mg,Co,Ni,Cu,Zn)O films grown on an epitaxial bottom electrode. By adjusting the magnesium composition (XMg = 0.11–0.27) of the entropy-stabilized oxide films, a range of internal time constants (159–278 ns) for the switching process can be obtained. We use the memristors to create a reservoir computing network that classifies time-series input data and show that the reservoir computing system, which has tunable reservoirs, offers better classification accuracy and energy efficiency than previous reservoir system implementations. Tunable and stable memristors based on single-crystalline entropy-stabilized oxide films grown on epitaxial bottom electrodes can be used to create energy-efficient reservoir computing networks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141069320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-15DOI: 10.1038/s41928-024-01140-0
Davide G. Marangon, Peter R. Smith, Nathan Walk, Taofiq K. Paraïso, James F. Dynes, Victor Lovic, Mirko Sanzaro, Thomas Roger, Innocenzo De Marco, Marco Lucamarini, Zhiliang Yuan, Andrew J. Shields
Generating random numbers securely and at a high rate is important for information technology. Integrated photonics could potentially be used to create mass-manufactured quantum random number generators. However, the development of robust and scalable approaches that are compatible with industrial deployment is challenging. Here, we report a fast quantum random number generator based on a photonic integrated circuit directly embedded on an electronic platform. We manufacture eight boards, which harvest randomness from an optical entropy core and process and distribute it in real time. We benchmark performance over a week of continuous gigahertz operation. We deploy our quantum random number generator in a quantum key distribution system and, despite operating in an uncontrolled environment, the physical randomness features minimal variations over 2.9 million histograms collected over 38 days. We also use a security model with our quantum random number generator to adjust the rate of the randomness content generated and demonstrate secure generation at 2 Gbit s−1. An integrated photonic circuit that is directly embedded on an electronic platform can generate random numbers at a rate of 2 Gbit s−1.
{"title":"A fast and robust quantum random number generator with a self-contained integrated photonic randomness core","authors":"Davide G. Marangon, Peter R. Smith, Nathan Walk, Taofiq K. Paraïso, James F. Dynes, Victor Lovic, Mirko Sanzaro, Thomas Roger, Innocenzo De Marco, Marco Lucamarini, Zhiliang Yuan, Andrew J. Shields","doi":"10.1038/s41928-024-01140-0","DOIUrl":"10.1038/s41928-024-01140-0","url":null,"abstract":"Generating random numbers securely and at a high rate is important for information technology. Integrated photonics could potentially be used to create mass-manufactured quantum random number generators. However, the development of robust and scalable approaches that are compatible with industrial deployment is challenging. Here, we report a fast quantum random number generator based on a photonic integrated circuit directly embedded on an electronic platform. We manufacture eight boards, which harvest randomness from an optical entropy core and process and distribute it in real time. We benchmark performance over a week of continuous gigahertz operation. We deploy our quantum random number generator in a quantum key distribution system and, despite operating in an uncontrolled environment, the physical randomness features minimal variations over 2.9 million histograms collected over 38 days. We also use a security model with our quantum random number generator to adjust the rate of the randomness content generated and demonstrate secure generation at 2 Gbit s−1. An integrated photonic circuit that is directly embedded on an electronic platform can generate random numbers at a rate of 2 Gbit s−1.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140925088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-08DOI: 10.1038/s41928-024-01166-4
A methodology — called auto tiny classifiers — is proposed to directly generate predictor circuits for the classification of tabular data, searching over the space of combinational logic using an evolutionary algorithm to maximize training prediction accuracy. Prediction performance is comparable to typical machine learning methods, but substantially fewer hardware resources and power are required.
{"title":"Tiny classifier circuits as accelerators for classification of tabular data","authors":"","doi":"10.1038/s41928-024-01166-4","DOIUrl":"10.1038/s41928-024-01166-4","url":null,"abstract":"A methodology — called auto tiny classifiers — is proposed to directly generate predictor circuits for the classification of tabular data, searching over the space of combinational logic using an evolutionary algorithm to maximize training prediction accuracy. Prediction performance is comparable to typical machine learning methods, but substantially fewer hardware resources and power are required.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140890493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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