Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522399
Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi
The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.
{"title":"Electrical properties of PZT thin films derived from sol-gel solution containing photo-sensitive water-generater","authors":"Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi","doi":"10.1109/ISAF.1994.522399","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522399","url":null,"abstract":"The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"59 1","pages":"450-453"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89496433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522338
J. Fielding, D. Smith, R. Meyer, S. Trolier-McKinstry, R. Newnham
Millimeter size, hollow spheres of lead zirconate titanate have been fabricated by blowing gas through a fine-grained slurry of PZT-5. Techniques were developed for the classification of defects in green and sintered spheres. The spheres were poled radially between inner and outer electrodes. The dielectric and piezoelectric properties were characterized for poled spheres. The two principal resonances were a breathing mode near 700 KHz and a wall thickness mode near 10 MHz. Hydrostatic d/sub h/ coefficients /spl sim/1000 pC/N were measured. Pulse-echo measurements were also performed to characterize transducer performance. Potential applications for these miniature omnidirectional transducers include biomedical imaging, flow noise sensors and hydrophones.
{"title":"Characterization of PZT hollow-sphere transducers","authors":"J. Fielding, D. Smith, R. Meyer, S. Trolier-McKinstry, R. Newnham","doi":"10.1109/ISAF.1994.522338","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522338","url":null,"abstract":"Millimeter size, hollow spheres of lead zirconate titanate have been fabricated by blowing gas through a fine-grained slurry of PZT-5. Techniques were developed for the classification of defects in green and sintered spheres. The spheres were poled radially between inner and outer electrodes. The dielectric and piezoelectric properties were characterized for poled spheres. The two principal resonances were a breathing mode near 700 KHz and a wall thickness mode near 10 MHz. Hydrostatic d/sub h/ coefficients /spl sim/1000 pC/N were measured. Pulse-echo measurements were also performed to characterize transducer performance. Potential applications for these miniature omnidirectional transducers include biomedical imaging, flow noise sensors and hydrophones.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"36 1","pages":"202-205"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72664936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522491
K. Raina, H. Coles
Electro-optic effects have been studied in a shortpitch (/spl rho//sub 0/=0.43 /spl mu/m), large spontaneous polarization (P/sub s/=90 nC/cm/sup 2/) ferroelectric liquid crystal mixture. The material in the form of thin films was sandwiched between polyimide coated transparent conducting glass plates. The sample alignment was planar in an electric field without shearing. Disclination loops appeared at low voltages and were then removed at higher voltages to obtain a 'bookshelf' structure which gives higher contrast. This material shows bistability, fast switching times (40 /spl mu/sec at 8 V//spl mu/m) and multiplexability. These are useful parameters for the operation of a fast electro-optic liquid crystal display device.
{"title":"Electro-optic switching behaviour of a novel shortpitch ferroelectric liquid crystal mixture","authors":"K. Raina, H. Coles","doi":"10.1109/ISAF.1994.522491","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522491","url":null,"abstract":"Electro-optic effects have been studied in a shortpitch (/spl rho//sub 0/=0.43 /spl mu/m), large spontaneous polarization (P/sub s/=90 nC/cm/sup 2/) ferroelectric liquid crystal mixture. The material in the form of thin films was sandwiched between polyimide coated transparent conducting glass plates. The sample alignment was planar in an electric field without shearing. Disclination loops appeared at low voltages and were then removed at higher voltages to obtain a 'bookshelf' structure which gives higher contrast. This material shows bistability, fast switching times (40 /spl mu/sec at 8 V//spl mu/m) and multiplexability. These are useful parameters for the operation of a fast electro-optic liquid crystal display device.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"24 1","pages":"788-790"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74714175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522465
D. Dausch, F. Wang, G. Haertling
PLZT-based antiferroelectric (AFE)/ferroelectric (FE) composite thin films were fabricated by automatic spin coating and crystallized by rapid thermal processing. A computer-controlled automatic spin coat reactor was used to spin composite thin films from acetate precursors with successive layers of FE and AFE composition. Films were spun on platinum-coated silicon substrates and rapid thermal thermally processed at 700/spl deg/C. Composite thin films exhibited improved AFE-type properties including increased dielectric constant (K) and saturation polarization (P/sub sat/) and decreased FE switching field (E/sub F/) compared to typical AFE compositions. X-ray diffraction results indicated that the composite thin films consisted of distinct AFE and FE phases. Modeling of the dielectric properties revealed linear series capacitor behavior within the composite thin films for low electric field conditions; however, nonlinear effects were apparent at high electric fields.
{"title":"Antiferroelectric/ferroelectric composite thin films","authors":"D. Dausch, F. Wang, G. Haertling","doi":"10.1109/ISAF.1994.522465","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522465","url":null,"abstract":"PLZT-based antiferroelectric (AFE)/ferroelectric (FE) composite thin films were fabricated by automatic spin coating and crystallized by rapid thermal processing. A computer-controlled automatic spin coat reactor was used to spin composite thin films from acetate precursors with successive layers of FE and AFE composition. Films were spun on platinum-coated silicon substrates and rapid thermal thermally processed at 700/spl deg/C. Composite thin films exhibited improved AFE-type properties including increased dielectric constant (K) and saturation polarization (P/sub sat/) and decreased FE switching field (E/sub F/) compared to typical AFE compositions. X-ray diffraction results indicated that the composite thin films consisted of distinct AFE and FE phases. Modeling of the dielectric properties revealed linear series capacitor behavior within the composite thin films for low electric field conditions; however, nonlinear effects were apparent at high electric fields.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"69 1","pages":"701-704"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79363221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522450
N. Bei, G. Duree, G. Salamo, R. Kapoor, E. Sharp, R. Neurgaonkar
The traditional method of determining the photorefractive effective charge density is to plot the photorefractive space charge field versus the crossing angle in a two-beam coupling experiment. The difficulty with this traditional measurement technique is that the apparatus must be moved several times in order to obtain data over the sufficient number of crossing angles needed for an accurate fit with theory. Moreover, with small crossing angles the overlap between the two crossing beams can easily extend over the entire crystal, while with larger crossing angles the overlap between the two beams becomes less certain. In this paper we demonstrate an alternative method of determining the photorefractive charge density. In this approach we measure the phase shift between the optical intensity pattern in the crystal and the resulting index pattern, as a function of the magnitude of an applied d.c. field. By comparing the measured value of the d.c. field which produces a minimum phase shift with that predicted by theory the photorefractive effective charge density is found. In this case, only the magnitude of the applied field is varied and the apparatus remains fixed. The result is obtained quickly and with little error.
{"title":"The use of applied electric fields the photorefractive tungsten bronze ferroelectrics","authors":"N. Bei, G. Duree, G. Salamo, R. Kapoor, E. Sharp, R. Neurgaonkar","doi":"10.1109/ISAF.1994.522450","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522450","url":null,"abstract":"The traditional method of determining the photorefractive effective charge density is to plot the photorefractive space charge field versus the crossing angle in a two-beam coupling experiment. The difficulty with this traditional measurement technique is that the apparatus must be moved several times in order to obtain data over the sufficient number of crossing angles needed for an accurate fit with theory. Moreover, with small crossing angles the overlap between the two crossing beams can easily extend over the entire crystal, while with larger crossing angles the overlap between the two beams becomes less certain. In this paper we demonstrate an alternative method of determining the photorefractive charge density. In this approach we measure the phase shift between the optical intensity pattern in the crystal and the resulting index pattern, as a function of the magnitude of an applied d.c. field. By comparing the measured value of the d.c. field which produces a minimum phase shift with that predicted by theory the photorefractive effective charge density is found. In this case, only the magnitude of the applied field is varied and the apparatus remains fixed. The result is obtained quickly and with little error.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"60 1","pages":"633-635"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80240181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522327
S. V. Gavrilyatchenko, A. Dantsiger, L. A. Reznitchenko, O. N. Razumovskaja, A. N. Klevtsov
The influence of the various techniques on the character of microstructure and temperature stability of resonance frequency for piezoelectric materials PCR-62 and PCR-63 has been considered. It is noted that temperature stability has high magnitudes at transition from hot pressing to traditional sintering. It is connected with an increase of field of bulk charge when the density of ceramics decreases.
{"title":"Temperature stability of resonance frequency of filter materials obtained by different techniques","authors":"S. V. Gavrilyatchenko, A. Dantsiger, L. A. Reznitchenko, O. N. Razumovskaja, A. N. Klevtsov","doi":"10.1109/ISAF.1994.522327","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522327","url":null,"abstract":"The influence of the various techniques on the character of microstructure and temperature stability of resonance frequency for piezoelectric materials PCR-62 and PCR-63 has been considered. It is noted that temperature stability has high magnitudes at transition from hot pressing to traditional sintering. It is connected with an increase of field of bulk charge when the density of ceramics decreases.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"62 1","pages":"168-169"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77919100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522394
S. Sengupta, L. Sengupta, W. E. Kosik
The possibility of combining ferroelectrics and superconductors has been of interest for use in memory storage devices. Additionally, superconductors offer crystal structures compatible to the epitaxial growth of the ferroelectric, Ba/sub 0.6/Sr/sub 0.4/TiO/sub 3/ (BSTO), which is cubic at this stoichiometry. BSTO has a lattice constant of 3.94 /spl Aring/ as compared to the superconducting Pr/sub 2-x/Ce/sub x/CuO/sub 4/ tetragonal single crystal which also has a lattice constant of a=3.94 /spl Aring/. In this study, ferroelectric thin films of BSTO were deposited on single crystals of Pr/sub 2/CuO/sub 4/ and Pr/sub 2-x/Ce/sub x/CuO/sub 4/. The optical constants of the substrates, single crystals of Pr/sub 2/CuO/sub 4/ and Pr/sub 2-x/Ce/sub x/CuO/sub 4/, were determined using Variable Angle Spectroscopic Ellipsometry (VASE) and the composition and crystal structure were examined using Rutherford Backscattering Spectrometry (RBS) with ion beam channeling. The substrate/film interfaces and the compositional variation in the films were also studied with RBS and with SEM/EDS. Glancing angle X-ray diffraction was used to verify the epitaxial nature of the films. The effect of the deposition parameters (laser repetition rate, oxygen backfill pressure, and deposition geometry) on the quality of the films was experimented with and the optimized parameters were used.
{"title":"Pulsed laser deposition (PLD) of ferroelectric thin films in conjunction with superconducting oxides","authors":"S. Sengupta, L. Sengupta, W. E. Kosik","doi":"10.1109/ISAF.1994.522394","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522394","url":null,"abstract":"The possibility of combining ferroelectrics and superconductors has been of interest for use in memory storage devices. Additionally, superconductors offer crystal structures compatible to the epitaxial growth of the ferroelectric, Ba/sub 0.6/Sr/sub 0.4/TiO/sub 3/ (BSTO), which is cubic at this stoichiometry. BSTO has a lattice constant of 3.94 /spl Aring/ as compared to the superconducting Pr/sub 2-x/Ce/sub x/CuO/sub 4/ tetragonal single crystal which also has a lattice constant of a=3.94 /spl Aring/. In this study, ferroelectric thin films of BSTO were deposited on single crystals of Pr/sub 2/CuO/sub 4/ and Pr/sub 2-x/Ce/sub x/CuO/sub 4/. The optical constants of the substrates, single crystals of Pr/sub 2/CuO/sub 4/ and Pr/sub 2-x/Ce/sub x/CuO/sub 4/, were determined using Variable Angle Spectroscopic Ellipsometry (VASE) and the composition and crystal structure were examined using Rutherford Backscattering Spectrometry (RBS) with ion beam channeling. The substrate/film interfaces and the compositional variation in the films were also studied with RBS and with SEM/EDS. Glancing angle X-ray diffraction was used to verify the epitaxial nature of the films. The effect of the deposition parameters (laser repetition rate, oxygen backfill pressure, and deposition geometry) on the quality of the films was experimented with and the optimized parameters were used.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"40 1","pages":"431-434"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76825961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522324
J. Fielding, T. Shrout, S. Jang
The large E-field induced strains and electromechanical coupling in PMN-based relaxors have been utilized in actuator and transducer applications. The effect of La/sup 3+/ modifications on the field-dependent dielectric and piezoelectric properties was investigated for several (1-x)PMN-(x)PT compositions with transition regions near room temperature. The effect of La/sup 3+/ modifications, increasing the width of the micro-macro polar transition range (/spl Delta/T), defined as the difference between the temperature of maximum permittivity (T/sub max/) and the depolarization temperature (T/sub d/), results in a broader temperature range for obtaining large induced electromechanical coupling factors with negligible hysteresis.
{"title":"Increased operating temperature range in La-modified Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ relaxor ferroelectric-based transducers","authors":"J. Fielding, T. Shrout, S. Jang","doi":"10.1109/ISAF.1994.522324","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522324","url":null,"abstract":"The large E-field induced strains and electromechanical coupling in PMN-based relaxors have been utilized in actuator and transducer applications. The effect of La/sup 3+/ modifications on the field-dependent dielectric and piezoelectric properties was investigated for several (1-x)PMN-(x)PT compositions with transition regions near room temperature. The effect of La/sup 3+/ modifications, increasing the width of the micro-macro polar transition range (/spl Delta/T), defined as the difference between the temperature of maximum permittivity (T/sub max/) and the depolarization temperature (T/sub d/), results in a broader temperature range for obtaining large induced electromechanical coupling factors with negligible hysteresis.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"2019 1","pages":"158-161"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73581713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522419
K. Brooks, D. Damjanovic, N. Setter, P. Luginbuhl, G. Racine, N. D. de Rooij
Micromachined cantilever beams actuated by sol-gel derived lead zirconium titanate (PZT) thin films are reported. Rectangular cantilevers of sub-millimeter dimensions and several different aspect ratios were fabricated. The PZT films utilized for these structures were 0.44 /spl mu/m thick. The natural resonance frequencies of the beams were determined from impedance measurements. The resonance frequency was found to follow a L/sup -2/ dependence, where L is the cantilever length. An effective elastic constant, s/sub 11/, for the beam structures of 15.7/spl times/10/sup -12/m/sup 2/N/sup -1/ was thus calculated. The effect of bias fields on the effective electromechanical coupling factor, k/sub 31/, was also determined from the resonance data. Maximum k/sub 31/ values measured were approximately 0.15, or about half of those reported for PZT bulk ceramics.
{"title":"Piezoelectric response of PZT thin film actuated micromachined silicon cantilever beams","authors":"K. Brooks, D. Damjanovic, N. Setter, P. Luginbuhl, G. Racine, N. D. de Rooij","doi":"10.1109/ISAF.1994.522419","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522419","url":null,"abstract":"Micromachined cantilever beams actuated by sol-gel derived lead zirconium titanate (PZT) thin films are reported. Rectangular cantilevers of sub-millimeter dimensions and several different aspect ratios were fabricated. The PZT films utilized for these structures were 0.44 /spl mu/m thick. The natural resonance frequencies of the beams were determined from impedance measurements. The resonance frequency was found to follow a L/sup -2/ dependence, where L is the cantilever length. An effective elastic constant, s/sub 11/, for the beam structures of 15.7/spl times/10/sup -12/m/sup 2/N/sup -1/ was thus calculated. The effect of bias fields on the effective electromechanical coupling factor, k/sub 31/, was also determined from the resonance data. Maximum k/sub 31/ values measured were approximately 0.15, or about half of those reported for PZT bulk ceramics.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"20 1","pages":"520-522"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84246965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522485
W. B. Carlson, S. Pilgrim, W. Schulze, Y. Kato, J. Frommelt
A longitudinal ("RIBBIE") form of a shear amplification sensor has been tested for amplified d/sub 15/ response. The mechanically amplified flexi-distortional system may improve the d/sub h/g/sub h/ figure of merit by transferring the compressional stress on the device to a lateral shear on the electroceramic element. This type of amplified system is mechanically classified as distortional and, therefore, without volume change By transforming the hydrostatic stress to transverse strain, the transverse forces can be used to develop shear strain and activate the d/sub 15/ coefficient. Electrodes are placed along the sides of the sensing element. Flexi-distortional devices are tested in order to check for the limits of sensitivity in their performance.
{"title":"Flexi-distortional piezoelectric sensor results","authors":"W. B. Carlson, S. Pilgrim, W. Schulze, Y. Kato, J. Frommelt","doi":"10.1109/ISAF.1994.522485","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522485","url":null,"abstract":"A longitudinal (\"RIBBIE\") form of a shear amplification sensor has been tested for amplified d/sub 15/ response. The mechanically amplified flexi-distortional system may improve the d/sub h/g/sub h/ figure of merit by transferring the compressional stress on the device to a lateral shear on the electroceramic element. This type of amplified system is mechanically classified as distortional and, therefore, without volume change By transforming the hydrostatic stress to transverse strain, the transverse forces can be used to develop shear strain and activate the d/sub 15/ coefficient. Electrodes are placed along the sides of the sensing element. Flexi-distortional devices are tested in order to check for the limits of sensitivity in their performance.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"3 1","pages":"770-771"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87118647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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