Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297848
N. Reddy, N. V. Prasad, G. Kumar, G. Prasad, E. Ramana
Defect-related structure is often interpreted as a special kind of material in the literature, considering in this direction, oxygen-deficient and charge-imbalanced polycrystalline materials of three-layered compound, namely Sr2Bi2Nb3O12 (SBN), was synthesized by Sol-Gel method. Dielectric and complex impedance analysis was studied on SBN. The enhancement of polarization is attributed to NbO6 octahedra. The sharp intensity-peak observed in Raman spectra is an indicative of Sr-O-Sr and Sr-O-Bi bonds and its competitive interactions. The peaks of FTIR spectra appeared at 610 cm-1 confirmed the same. Electrical impedance and Pyroelectric measurements were also performed. The observed broad semicircle in the complex impedance plot, associated with grain and grain boundary, is corroborated with the log-log spectroscopic plots for better understanding of the disorder ferroelectric behavior of th sample.
{"title":"Impedance and pyroelectric measurements on charge imbalanced BLSF sol-gel ceramic","authors":"N. Reddy, N. V. Prasad, G. Kumar, G. Prasad, E. Ramana","doi":"10.1109/ISAF.2012.6297848","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297848","url":null,"abstract":"Defect-related structure is often interpreted as a special kind of material in the literature, considering in this direction, oxygen-deficient and charge-imbalanced polycrystalline materials of three-layered compound, namely Sr2Bi2Nb3O12 (SBN), was synthesized by Sol-Gel method. Dielectric and complex impedance analysis was studied on SBN. The enhancement of polarization is attributed to NbO6 octahedra. The sharp intensity-peak observed in Raman spectra is an indicative of Sr-O-Sr and Sr-O-Bi bonds and its competitive interactions. The peaks of FTIR spectra appeared at 610 cm-1 confirmed the same. Electrical impedance and Pyroelectric measurements were also performed. The observed broad semicircle in the complex impedance plot, associated with grain and grain boundary, is corroborated with the log-log spectroscopic plots for better understanding of the disorder ferroelectric behavior of th sample.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"23 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89559705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297756
D. Szwagierczak, J. Kulawik
The paper presents synthesis and sintering procedure and dielectric properties of a new high permittivity perovskite material with the composition Bi2/3CuTa4O12 and the structure similar to that of Cu2Ta4O12. Complex impedance spectroscopic studies carried out at frequencies 10 Hz-2 MHz and in a wide temperature range from -55 to 700°C reveal two types of dielectric response of ceramic samples. The high-frequency and low-temperature response was attributed to grains, and the low-frequency and high-temperature one - to grain boundaries. The high dielectric permittivity at a level of 105 was suggested to be related to spontaneous formation of internal barrier layer capacitors. SEM and EDS studies confirmed the existence of semiconducting grains and more resistive grain boundaries in Bi2/3CuTa4O12 ceramics.
{"title":"Application of bismuth copper tantalate in internal barrier layer capacitors","authors":"D. Szwagierczak, J. Kulawik","doi":"10.1109/ISAF.2012.6297756","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297756","url":null,"abstract":"The paper presents synthesis and sintering procedure and dielectric properties of a new high permittivity perovskite material with the composition Bi<sub>2/3</sub>CuTa<sub>4</sub>O<sub>12</sub> and the structure similar to that of Cu<sub>2</sub>Ta<sub>4</sub>O<sub>12</sub>. Complex impedance spectroscopic studies carried out at frequencies 10 Hz-2 MHz and in a wide temperature range from -55 to 700°C reveal two types of dielectric response of ceramic samples. The high-frequency and low-temperature response was attributed to grains, and the low-frequency and high-temperature one - to grain boundaries. The high dielectric permittivity at a level of 10<sup>5</sup> was suggested to be related to spontaneous formation of internal barrier layer capacitors. SEM and EDS studies confirmed the existence of semiconducting grains and more resistive grain boundaries in Bi<sub>2/3</sub>CuTa<sub>4</sub>O<sub>12</sub> ceramics.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"30 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86571157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297857
B. Khaled, K. Mohamed, A. Azzedine
Cordierite ceramic are elaborated by mixing a Algerian kaolin which is located in “Djebel Debbagh” region in the Algerian east, and hydroxide of magnesium. This kaolin named “DD3”, contains a large tenor of manganese oxide (MnO>;1.34 %) what gives a blackish colouring to this clay, which limit its utilization in luxury porcelain and sanitary ware where brightness and whiteness are required. However DD3 is composed mainly by kaolinite and gibbsite which is also bearer of alumina. Fusible compound such iron and alkalis are less than 1 %. Elaboration of cordierite is carried out by mixing magnesium hydroxide to DD3. Fumed Silica powder is added to respect the stoichiometric composition of cordierite. Magnesium hydroxide is prepared by precipitation from MgCl2 and NH4OH. The mixtures with various compositions of DD3 kaolin and magnesium hydroxide are pressed to give samples in form of pastilles, and sintered at temperatures ranging from 1200 °C to 1350 °C to determine the ceramics properties such apparent and specific density, linear shrinkage, water absorption. Formation of Cordierite phase and structural changes are investigated by X-ray diffraction (XRD), simultaneous thermal analysis (DTA-TG), and thermal dilatometry.
{"title":"Elaboration of cordierite ceramic starting from Algerian clays","authors":"B. Khaled, K. Mohamed, A. Azzedine","doi":"10.1109/ISAF.2012.6297857","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297857","url":null,"abstract":"Cordierite ceramic are elaborated by mixing a Algerian kaolin which is located in “Djebel Debbagh” region in the Algerian east, and hydroxide of magnesium. This kaolin named “DD3”, contains a large tenor of manganese oxide (MnO>;1.34 %) what gives a blackish colouring to this clay, which limit its utilization in luxury porcelain and sanitary ware where brightness and whiteness are required. However DD3 is composed mainly by kaolinite and gibbsite which is also bearer of alumina. Fusible compound such iron and alkalis are less than 1 %. Elaboration of cordierite is carried out by mixing magnesium hydroxide to DD3. Fumed Silica powder is added to respect the stoichiometric composition of cordierite. Magnesium hydroxide is prepared by precipitation from MgCl2 and NH4OH. The mixtures with various compositions of DD3 kaolin and magnesium hydroxide are pressed to give samples in form of pastilles, and sintered at temperatures ranging from 1200 °C to 1350 °C to determine the ceramics properties such apparent and specific density, linear shrinkage, water absorption. Formation of Cordierite phase and structural changes are investigated by X-ray diffraction (XRD), simultaneous thermal analysis (DTA-TG), and thermal dilatometry.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"32 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81184925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297824
C. Borderon, R. Renoud, M. Ragheb, H. Gundel
The characterizations of ferroïc materials are often realized by measuring the minor loops. The polarization P and/or the strain S are reported as a function of the ac electric field E and/or the ac mechanical stress σ. The slope of the loop depends on the real part of ε or d (respectively the dielectric constant and the piezoelectric coefficient) and its opening is related to the imaginary part of ε or d. To interpret the loop properties, we use a model describing the motion of the domain walls, model presented elsewhere in the congress. For a low value of the amplitude of E or s, the motion of the walls is vibration and jumps between pinning centers. For the vibration, ε and d do not depends on the amplitude of E or σ while they vary linearly with it for the contribution of the jumps. The variation of ε and d as a function of E or σ follows a hyperbolic law. The behavior is valid for the real part of these quantities but also for the imaginary part. For very low amplitudes, ε and d are constant because the jumps contribution is negligible and the vibration displacement is proportional to E or σ. In these conditions, the minor loop is an ellipse. The adding of the jumps at higher amplitude leads to a distortion of the loop.
{"title":"Modeling of minor loops of a ferroïc single crystal","authors":"C. Borderon, R. Renoud, M. Ragheb, H. Gundel","doi":"10.1109/ISAF.2012.6297824","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297824","url":null,"abstract":"The characterizations of ferroïc materials are often realized by measuring the minor loops. The polarization P and/or the strain S are reported as a function of the ac electric field E and/or the ac mechanical stress σ. The slope of the loop depends on the real part of ε or d (respectively the dielectric constant and the piezoelectric coefficient) and its opening is related to the imaginary part of ε or d. To interpret the loop properties, we use a model describing the motion of the domain walls, model presented elsewhere in the congress. For a low value of the amplitude of E or s, the motion of the walls is vibration and jumps between pinning centers. For the vibration, ε and d do not depends on the amplitude of E or σ while they vary linearly with it for the contribution of the jumps. The variation of ε and d as a function of E or σ follows a hyperbolic law. The behavior is valid for the real part of these quantities but also for the imaginary part. For very low amplitudes, ε and d are constant because the jumps contribution is negligible and the vibration displacement is proportional to E or σ. In these conditions, the minor loop is an ellipse. The adding of the jumps at higher amplitude leads to a distortion of the loop.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"59 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91444783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297786
S. Alkoy, S. Dursun
Textured ceramic fibers were fabricated from the tungsten-bronze type piezoelectric KSr2Nb5O15. Development of crystallographic texture was evaluated through rocking curve analysis and a texture with Lotgering factor of 0.97 was achieved. 1-3 piezocomposites were prepared from the textured fibers and their electrical properties were evaluated. Highly enhanced properties were observed with increasing texture fraction.
{"title":"Textured lead-free KSr2Nb5O15 piezoelectric ceramics, fibers and piezocomposites — Processing and properties","authors":"S. Alkoy, S. Dursun","doi":"10.1109/ISAF.2012.6297786","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297786","url":null,"abstract":"Textured ceramic fibers were fabricated from the tungsten-bronze type piezoelectric KSr2Nb5O15. Development of crystallographic texture was evaluated through rocking curve analysis and a texture with Lotgering factor of 0.97 was achieved. 1-3 piezocomposites were prepared from the textured fibers and their electrical properties were evaluated. Highly enhanced properties were observed with increasing texture fraction.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"8 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91510658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297804
Jichul Park, L. Hwang, Sunmin Byeon, J. Yoo, Yeongho Jeong
In this study, the signal detection circuit of acoustic emission (AE) sensors was presented using Pb-free (Na, K)NbO3 system ceramics with excellent g33(=40.10× 10-3 Vm/N) piezoelectric voltage constant. Signal detection circuit was consisted of the impedance converter, high-pass filter, the signal amplification circuit, and rectifying circuit. The signal converted by impedance converter was amplified by amplifier. Also, the amplified signal was converted and displayed from AC to DC through rectifying circuit.
{"title":"Signal detection circuit of acoustic emission sensor using Pb-free (Na, K)NbO3 system ceramics","authors":"Jichul Park, L. Hwang, Sunmin Byeon, J. Yoo, Yeongho Jeong","doi":"10.1109/ISAF.2012.6297804","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297804","url":null,"abstract":"In this study, the signal detection circuit of acoustic emission (AE) sensors was presented using Pb-free (Na, K)NbO3 system ceramics with excellent g33(=40.10× 10-3 Vm/N) piezoelectric voltage constant. Signal detection circuit was consisted of the impedance converter, high-pass filter, the signal amplification circuit, and rectifying circuit. The signal converted by impedance converter was amplified by amplifier. Also, the amplified signal was converted and displayed from AC to DC through rectifying circuit.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"75 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91093153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297851
F. Jean, M. Bousquet, J. Duclère, A. Boulle, F. Rémondière, S. Députier, J. Orlianges, P. Marchet, M. Guilloux-Viry
The epitaxial growth of lead-free ferroelectric Na0.5Bi0.5TiO3 (NBT) thin films on various single crystal substrates was successfully achieved, using the pulsed laser deposition technique (PLD). The present work is divided in two parts, focused on: (i) the growth of NBT layers on c- and r-sapphire (Al2O3) substrates, with and without introducing a CeO2 buffer layer, and (ii) the growth of NBT layers on bare (001)SrTiO3 substrates, with and without introducing a LaNiO3 layer, that could be used as a bottom electrode. In the first part, it was shown that the introduction of a CeO2 buffer layer completely modifies the out-of-plane growth orientation of the NBT films, as well as their microstructure. Indeed, (001)NBT films epitaxially grow only on r-Al2O3 substrates buffered with epitaxial (001)CeO2 layers, while, growing simply NBT on top of bare c or r-Al2O3 substrates, or on top of CeO2/c-Al2O3 heterostructures leads to polycrystalline or textured films. In the second part, we demonstrate that (001)-oriented NBT layers deposited on either bare (001)SrTiO3 or (001)SrTiO3 substrates (STO) covered with (001)LaNiO3 (LNO) are systematically epitaxially grown. Furthermore, the microstructure of the samples is strongly affected by the introduction of the LaNiO3 layer.
{"title":"Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates","authors":"F. Jean, M. Bousquet, J. Duclère, A. Boulle, F. Rémondière, S. Députier, J. Orlianges, P. Marchet, M. Guilloux-Viry","doi":"10.1109/ISAF.2012.6297851","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297851","url":null,"abstract":"The epitaxial growth of lead-free ferroelectric Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub> (NBT) thin films on various single crystal substrates was successfully achieved, using the pulsed laser deposition technique (PLD). The present work is divided in two parts, focused on: (i) the growth of NBT layers on c- and r-sapphire (Al<sub>2</sub>O<sub>3</sub>) substrates, with and without introducing a CeO<sub>2</sub> buffer layer, and (ii) the growth of NBT layers on bare (001)SrTiO<sub>3</sub> substrates, with and without introducing a LaNiO<sub>3</sub> layer, that could be used as a bottom electrode. In the first part, it was shown that the introduction of a CeO<sub>2</sub> buffer layer completely modifies the out-of-plane growth orientation of the NBT films, as well as their microstructure. Indeed, (001)NBT films epitaxially grow only on r-Al<sub>2</sub>O<sub>3</sub> substrates buffered with epitaxial (001)CeO<sub>2</sub> layers, while, growing simply NBT on top of bare c or r-Al<sub>2</sub>O<sub>3</sub> substrates, or on top of CeO<sub>2</sub>/c-Al<sub>2</sub>O<sub>3</sub> heterostructures leads to polycrystalline or textured films. In the second part, we demonstrate that (001)-oriented NBT layers deposited on either bare (001)SrTiO<sub>3</sub> or (001)SrTiO<sub>3</sub> substrates (STO) covered with (001)LaNiO<sub>3</sub> (LNO) are systematically epitaxially grown. Furthermore, the microstructure of the samples is strongly affected by the introduction of the LaNiO<sub>3</sub> layer.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"188 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78108648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nitin Deepak, Panfeng F. Zhang, L. Keeney, M. Pemble, R. Whatmore
C-axis oriented ferroelectric bismuth titanate (Bi4Ti3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.
{"title":"Atomic vapor deposition of bismuth titanate thin films","authors":"Nitin Deepak, Panfeng F. Zhang, L. Keeney, M. Pemble, R. Whatmore","doi":"10.1063/1.4801985","DOIUrl":"https://doi.org/10.1063/1.4801985","url":null,"abstract":"C-axis oriented ferroelectric bismuth titanate (Bi4Ti3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"179 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77488938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297715
A. Boes, T. Crasto, V. Sivan, E. Soergel, H. Steigerwald, A. Mitchell
Domains with a width of a few microns are engineered in lithium niobate crystals by irradiating the surface with strongly absorbed UV light. The fact that the UV light can not only write but also erase domains enables on-demand geometries of the domain features.
{"title":"Tailor-made domain structures on the x-face and y-face of LiNbO3 crystals","authors":"A. Boes, T. Crasto, V. Sivan, E. Soergel, H. Steigerwald, A. Mitchell","doi":"10.1109/ISAF.2012.6297715","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297715","url":null,"abstract":"Domains with a width of a few microns are engineered in lithium niobate crystals by irradiating the surface with strongly absorbed UV light. The fact that the UV light can not only write but also erase domains enables on-demand geometries of the domain features.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"29 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73981616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297867
S. Uzgur, D. Hutson, K. Kirk
Aluminium nitride (AlN) which has a wurtzite crystal structure is highly suitable material for applications in a wide range field of ultrasonic transducers, non-destructive testing and MEMS-Micro-Electro-Mechanical Systems because of AlN's good piezoelectric properties. We are interested in investigation of the suitability of piezoelectric AlN for thin film based devices for MEMS applications. Since the good functionality of piezoelectric devices is highly dependent on the quality of the thin film, our first aim is to improve the quality of the deposited film and eventually to build an optimised deposition parameters by using design of experiments method (DoE). Thin films produced by RF Magnetron Sputtering were characterized to analyze its crystallographic structure by using X-ray diffraction, Scanning Electron Microscope (SEM), and Spectrophotometer. The structural and mechanical characterization results showed that AlN thin film has highly (002) c-axis orientation. The optical characterization supported the thickness of the films were in the range of micron. The optimization process pointed out that the input parameters did not have a significant effect on the output parameters.
{"title":"Thickness optimization of AlN thin films deposited by RF Magnetron Sputtering","authors":"S. Uzgur, D. Hutson, K. Kirk","doi":"10.1109/ISAF.2012.6297867","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297867","url":null,"abstract":"Aluminium nitride (AlN) which has a wurtzite crystal structure is highly suitable material for applications in a wide range field of ultrasonic transducers, non-destructive testing and MEMS-Micro-Electro-Mechanical Systems because of AlN's good piezoelectric properties. We are interested in investigation of the suitability of piezoelectric AlN for thin film based devices for MEMS applications. Since the good functionality of piezoelectric devices is highly dependent on the quality of the thin film, our first aim is to improve the quality of the deposited film and eventually to build an optimised deposition parameters by using design of experiments method (DoE). Thin films produced by RF Magnetron Sputtering were characterized to analyze its crystallographic structure by using X-ray diffraction, Scanning Electron Microscope (SEM), and Spectrophotometer. The structural and mechanical characterization results showed that AlN thin film has highly (002) c-axis orientation. The optical characterization supported the thickness of the films were in the range of micron. The optimization process pointed out that the input parameters did not have a significant effect on the output parameters.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78626675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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