Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297795
M. Cuniot-Ponsard
The Kelvin Force Microscopy technique is exploited to obtain quantitative information on the local polarization dependences in strontium barium niobate epitaxial thin films.
利用开尔文力显微镜技术获得了铌酸锶钡外延薄膜局部极化依赖的定量信息。
{"title":"Local polarization in strontium barium niobate (SBN) epitaxial thin films investigated using Kelvin Force Microscopy (KFM)","authors":"M. Cuniot-Ponsard","doi":"10.1109/ISAF.2012.6297795","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297795","url":null,"abstract":"The Kelvin Force Microscopy technique is exploited to obtain quantitative information on the local polarization dependences in strontium barium niobate epitaxial thin films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"35 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91187794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297727
Y. Genenko, O. Hirsch, P. Erhart
Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.
{"title":"Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields","authors":"Y. Genenko, O. Hirsch, P. Erhart","doi":"10.1109/ISAF.2012.6297727","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297727","url":null,"abstract":"Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84248420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297782
R. Rivera, M. Hejazi, A. Safari
BiFeO3 (BFO) has stimulated a great interest in recent years for its room temperature multiferroic behavior with very high remnant polarization. However, the leakage current of BFO films is very high. To lower the leakage current, we have developed thin films with following target compositions on SrRuO3 buffered on SrTiO3 substrate by Pulsed Laser Deposition (PLD): (A) BiFeO3, (B) 0.88Bi0.5Na0.5TiO3-0.08Bi0.5K0.5TiO3-0.04BaTiO3, (C) 0.6BiFeO3-0.4(Bi0.5K0.5TiO3) The phase, growth orientation, microstructural characterization and electrical properties were investigated as a function of deposition parameters. The epitaxial bi-layered 300nm BNT-BKT-BT/BFO thin films (150nm each) exhibited ferroelectric behavior as: 2Pr = 44.0 μC.cm-2, 2Ec = 200 kV.cm-1 and K = 140. Thin films with a composition of 0.6BFO-0.4BKT have also been deposited with different oxygen pressures of 300-500 mTorr. Preliminary results of 0.6BFO-0.4BKT films show that the leakage current can be suppressed by about 4 orders of magnitude which in turn improves the ferroelectric and dielectric properties of the films. It is observed that the remnant polarization increases from 8 to 19 μC.cm-2 as the oxygen pressure is changed from 500 to 300mtorr.
{"title":"Ferroelectric and dielectric properties of bismuth ferrite based thin films by Pulsed Laser Deposition","authors":"R. Rivera, M. Hejazi, A. Safari","doi":"10.1109/ISAF.2012.6297782","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297782","url":null,"abstract":"BiFeO<sub>3</sub> (BFO) has stimulated a great interest in recent years for its room temperature multiferroic behavior with very high remnant polarization. However, the leakage current of BFO films is very high. To lower the leakage current, we have developed thin films with following target compositions on SrRuO<sub>3</sub> buffered on SrTiO<sub>3</sub> substrate by Pulsed Laser Deposition (PLD): (A) BiFeO<sub>3</sub>, (B) 0.88Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-0.08Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub>-0.04BaTiO<sub>3</sub>, (C) 0.6BiFeO<sub>3</sub>-0.4(Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub>) The phase, growth orientation, microstructural characterization and electrical properties were investigated as a function of deposition parameters. The epitaxial bi-layered 300nm BNT-BKT-BT/BFO thin films (150nm each) exhibited ferroelectric behavior as: 2P<sub>r</sub> = 44.0 μC.cm<sup>-2</sup>, 2E<sub>c</sub> = 200 kV.cm<sup>-1</sup> and K = 140. Thin films with a composition of 0.6BFO-0.4BKT have also been deposited with different oxygen pressures of 300-500 mTorr. Preliminary results of 0.6BFO-0.4BKT films show that the leakage current can be suppressed by about 4 orders of magnitude which in turn improves the ferroelectric and dielectric properties of the films. It is observed that the remnant polarization increases from 8 to 19 μC.cm<sup>-2</sup> as the oxygen pressure is changed from 500 to 300mtorr.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"74 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86299301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297784
G. Beckers, L. Pirnay, B. Dehez
Piezoelectric materials show interesting properties for developing actuators but most of the times they must be integrated in a stroke amplification structure. This paper presents a ring-shape Recurve structure that allows better integration in a mechatronics system as well as a good stroke. Two models based on Euler-Bernoulli beams theory are provided. Both consider only a bending load and the piezoelectric effect but one is a straight beam and the other is a curved beam. A finite-element model is used to show the limits of the hypothesis.
{"title":"Design and modelling of a ring-shape Recurve piezoelectric actuator","authors":"G. Beckers, L. Pirnay, B. Dehez","doi":"10.1109/ISAF.2012.6297784","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297784","url":null,"abstract":"Piezoelectric materials show interesting properties for developing actuators but most of the times they must be integrated in a stroke amplification structure. This paper presents a ring-shape Recurve structure that allows better integration in a mechatronics system as well as a good stroke. Two models based on Euler-Bernoulli beams theory are provided. Both consider only a bending load and the piezoelectric effect but one is a straight beam and the other is a curved beam. A finite-element model is used to show the limits of the hypothesis.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78640521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297844
E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350°C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300°C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the film substrate interface are not primarily responsible for the observed self-polarization effect in our films.
{"title":"Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films","authors":"E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin","doi":"10.1109/ISAF.2012.6297844","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297844","url":null,"abstract":"Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350°C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300°C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the film substrate interface are not primarily responsible for the observed self-polarization effect in our films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74615825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297858
A. Bartasyte, O. Elmazria, M. Gonzalez, L. Bouvot, E. Blampain, P. Boulet
Temperature coefficient of frequency of LiTaO3 single crystals was tuned by changing the Li stoichiometry. For this purpose, congruent 36°Y cut crystals, available commercially, were treated by vapor transport equilibration and temperature coefficient of frequency of surface acoustic waves propagating along X-axis as a function of Li concentration was studied. The temperature coefficient of frequency of -7 ppm/° was achieved for surface acoustic waves propagating in the crystals containing 49.43 mol % of Li2O.
{"title":"Reduction of temperature coefficient of frequency in LiTaO3 single crystals for surface acoustic wave applications","authors":"A. Bartasyte, O. Elmazria, M. Gonzalez, L. Bouvot, E. Blampain, P. Boulet","doi":"10.1109/ISAF.2012.6297858","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297858","url":null,"abstract":"Temperature coefficient of frequency of LiTaO3 single crystals was tuned by changing the Li stoichiometry. For this purpose, congruent 36°Y cut crystals, available commercially, were treated by vapor transport equilibration and temperature coefficient of frequency of surface acoustic waves propagating along X-axis as a function of Li concentration was studied. The temperature coefficient of frequency of -7 ppm/° was achieved for surface acoustic waves propagating in the crystals containing 49.43 mol % of Li2O.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"5 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81850078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297825
M. Ragheb, R. Renoud, C. Borderon, H. Gundel
We propose a description of the non-linear response of a ferroïc single crystal to the action of an ac constraint, here an electric field, by examining the polarization. For that, we use the model we have develop to describe the movement of the domain walls [1]. We establish the equation of the polarization or of the strain as a function of the time and we deduce the expression of the hysteresis loop. The equation consists of two parts. The first one is related to dynamical processes. It allows both to consider the instantaneous response of the ferroelectric (real part of the dielectric constant) that the delay caused by losses during the switching of the dipoles (imaginary part of the dielectric constant). The frequency and the amplitude dependencies of the slope of loop are included in the description. The second part represents the static contribution. It is described by a nonlinear function which it is the best description of the saturation function. This model allows us to obtain the expressions for the coercive and the remnant values as a function of the frequency and the amplitude of the ac applied constraint. Predictions of the model for single crystals are in well agreement with experimental data.
{"title":"Modeling of the hyteresys loop of a ferroïc single cristal","authors":"M. Ragheb, R. Renoud, C. Borderon, H. Gundel","doi":"10.1109/ISAF.2012.6297825","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297825","url":null,"abstract":"We propose a description of the non-linear response of a ferroïc single crystal to the action of an ac constraint, here an electric field, by examining the polarization. For that, we use the model we have develop to describe the movement of the domain walls [1]. We establish the equation of the polarization or of the strain as a function of the time and we deduce the expression of the hysteresis loop. The equation consists of two parts. The first one is related to dynamical processes. It allows both to consider the instantaneous response of the ferroelectric (real part of the dielectric constant) that the delay caused by losses during the switching of the dipoles (imaginary part of the dielectric constant). The frequency and the amplitude dependencies of the slope of loop are included in the description. The second part represents the static contribution. It is described by a nonlinear function which it is the best description of the saturation function. This model allows us to obtain the expressions for the coercive and the remnant values as a function of the frequency and the amplitude of the ac applied constraint. Predictions of the model for single crystals are in well agreement with experimental data.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82960239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Ramana, Bo Wha Lee, Chang Uk Jung, Sang Mo Yang, Ranju Jung, M. Jung
Fe-doped BaTiO3 thin films were grown on (001) oriented SrTiO3 substrates using pulsed-laser deposition technique. These films had a single-phase character and good epitaxial relationship with the substrate. Polarization-electric field (P-E) hysteresis revealed a saturated polarization with a remnant polarization (Pr) of 13.5 μC/cm2 for 10 mol% Fe-doped BaTiO3 films. Further increase of composition resulted in the large leakage currents and reduction of polarization. The piezoelectric domain switching in the films was confirmed by local hysteresis using piezoelectric force microscopy measurements. The Fe-doped BaTiO3 thin films exhibited room temperature ferromagnetism, and the magnetization value increased with increasing Fe concentration. Our results demonstrated that the addition of Fe ≤10 mol% in BaTiO3 induce the ferromagnetism and the switchable ferroelectric state.
{"title":"Ferroelectric and magnetic properties of Fe-doped BaTiO3 thin films grown by the pulsed laser deposition","authors":"E. Ramana, Bo Wha Lee, Chang Uk Jung, Sang Mo Yang, Ranju Jung, M. Jung","doi":"10.1063/1.4801965","DOIUrl":"https://doi.org/10.1063/1.4801965","url":null,"abstract":"Fe-doped BaTiO3 thin films were grown on (001) oriented SrTiO3 substrates using pulsed-laser deposition technique. These films had a single-phase character and good epitaxial relationship with the substrate. Polarization-electric field (P-E) hysteresis revealed a saturated polarization with a remnant polarization (Pr) of 13.5 μC/cm2 for 10 mol% Fe-doped BaTiO3 films. Further increase of composition resulted in the large leakage currents and reduction of polarization. The piezoelectric domain switching in the films was confirmed by local hysteresis using piezoelectric force microscopy measurements. The Fe-doped BaTiO3 thin films exhibited room temperature ferromagnetism, and the magnetization value increased with increasing Fe concentration. Our results demonstrated that the addition of Fe ≤10 mol% in BaTiO3 induce the ferromagnetism and the switchable ferroelectric state.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"85 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90312961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297792
B. Weigand, M. Stolze, F. Rubel, J. L’huillier, A. Lenhard, C. Becher, S. Wolff
We have fabricated ridge waveguides in lithium niobate with sidewall roughness of 14 nm (rms) and sidewall angles of more than 71°. The use of thick electroplated metal masks for reactive ion etching (RIE) makes it possible to manufacture ridge structures with several microns in height. For light confinement towards the substrate we investigate direct heterobonding techniques. Due to the expected low transmission losses we envision future applications in the field of quantum optics.
{"title":"Fabrication of ridge waveguides in LiNbO3","authors":"B. Weigand, M. Stolze, F. Rubel, J. L’huillier, A. Lenhard, C. Becher, S. Wolff","doi":"10.1109/ISAF.2012.6297792","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297792","url":null,"abstract":"We have fabricated ridge waveguides in lithium niobate with sidewall roughness of 14 nm (rms) and sidewall angles of more than 71°. The use of thick electroplated metal masks for reactive ion etching (RIE) makes it possible to manufacture ridge structures with several microns in height. For light confinement towards the substrate we investigate direct heterobonding techniques. Due to the expected low transmission losses we envision future applications in the field of quantum optics.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"63 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89304959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297718
M. Lanki, A. Nourmohammadi, M. Feiz
In the current research, we have utilized sol-gel electrophoresis technique to grow Lead Titanate (PbTiO3) nanotubes in porous anodic alumina template channels. The templates were prepared through two-step anodizing of pure aluminum foils in phosphoric acid. The porous templates were filled with a highly stabilized PbTiO3 sol prepared using titanium tetra-butoxide and lead acetate trihydrate, as the Ti and Pb precursors. A DC electric field was applied to drive the sol into the template channels. Tube formation was realized after etching of the template pores with 5wt. % caustic soda solution. Sol-gel electrophoresis method has already been used for preparing PbTiO3 thin films and nanowires, and by using it, high quality and more condenses layers than other usual sol-gel methods have been produced. But, to the best of our knowledge, this method has not been used for growth of PbTiO3 nanotubes. The heat treatment condition was evaluated based on the simultaneous thermal analysis (STA) results of the prepared and crystallization of the tetragonal perovskite structure by the X-ray diffraction (XRD) of the grown nanotubes. Scanning electron microscopy (SEM) investigations showed that close-packed PbTiO3 nanotubes have been grown in the template channels.
{"title":"Electrophoretic growth of Lead Titanate nanotubes","authors":"M. Lanki, A. Nourmohammadi, M. Feiz","doi":"10.1109/ISAF.2012.6297718","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297718","url":null,"abstract":"In the current research, we have utilized sol-gel electrophoresis technique to grow Lead Titanate (PbTiO3) nanotubes in porous anodic alumina template channels. The templates were prepared through two-step anodizing of pure aluminum foils in phosphoric acid. The porous templates were filled with a highly stabilized PbTiO3 sol prepared using titanium tetra-butoxide and lead acetate trihydrate, as the Ti and Pb precursors. A DC electric field was applied to drive the sol into the template channels. Tube formation was realized after etching of the template pores with 5wt. % caustic soda solution. Sol-gel electrophoresis method has already been used for preparing PbTiO3 thin films and nanowires, and by using it, high quality and more condenses layers than other usual sol-gel methods have been produced. But, to the best of our knowledge, this method has not been used for growth of PbTiO3 nanotubes. The heat treatment condition was evaluated based on the simultaneous thermal analysis (STA) results of the prepared and crystallization of the tetragonal perovskite structure by the X-ray diffraction (XRD) of the grown nanotubes. Scanning electron microscopy (SEM) investigations showed that close-packed PbTiO3 nanotubes have been grown in the template channels.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"66 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85594503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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