Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297819
A. Vincent, V. Grimal, F. Gervais, L. Ventura, N. Poirot
The purpose of this work is to develop a new route for BST synthesis. BST thin film are produced by spin coating on an oriented LNO/Si substrate. The phase purity and possible crystalline orientation are determined by XRD. BST microstructure and texturation are discussed from detailed SEM images and capacitance measurement confirm the BST performances.
{"title":"New route for BST synthesis by soft chemistry","authors":"A. Vincent, V. Grimal, F. Gervais, L. Ventura, N. Poirot","doi":"10.1109/ISAF.2012.6297819","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297819","url":null,"abstract":"The purpose of this work is to develop a new route for BST synthesis. BST thin film are produced by spin coating on an oriented LNO/Si substrate. The phase purity and possible crystalline orientation are determined by XRD. BST microstructure and texturation are discussed from detailed SEM images and capacitance measurement confirm the BST performances.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"37 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91545071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297853
U. Salazar-Kuri, M. Mendoza, Dragan Damjanovic, N. Setter
The conductivity of Bi4Ti3O12 (BiT) single crystals was calculated from the dielectric response at subswitching conditions over a wide range of temperatures (20-250 °C) and frequencies (100 mHz to 10 kHz) in-plane and out-of-plane. The calculated activation energy for dc conductivity was approximately the same as the energy gap around 3 eV suggesting an electron-hole charge movement. The dominant electronic contribution was seen by polarized optical microscopy on transmission by the absorption of a laser of 3 eV.
{"title":"Conductivity and optical absorption in Bi4Ti3O12 single crystals","authors":"U. Salazar-Kuri, M. Mendoza, Dragan Damjanovic, N. Setter","doi":"10.1109/ISAF.2012.6297853","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297853","url":null,"abstract":"The conductivity of Bi4Ti3O12 (BiT) single crystals was calculated from the dielectric response at subswitching conditions over a wide range of temperatures (20-250 °C) and frequencies (100 mHz to 10 kHz) in-plane and out-of-plane. The calculated activation energy for dc conductivity was approximately the same as the energy gap around 3 eV suggesting an electron-hole charge movement. The dominant electronic contribution was seen by polarized optical microscopy on transmission by the absorption of a laser of 3 eV.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"1200 ","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91520312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297795
M. Cuniot-Ponsard
The Kelvin Force Microscopy technique is exploited to obtain quantitative information on the local polarization dependences in strontium barium niobate epitaxial thin films.
利用开尔文力显微镜技术获得了铌酸锶钡外延薄膜局部极化依赖的定量信息。
{"title":"Local polarization in strontium barium niobate (SBN) epitaxial thin films investigated using Kelvin Force Microscopy (KFM)","authors":"M. Cuniot-Ponsard","doi":"10.1109/ISAF.2012.6297795","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297795","url":null,"abstract":"The Kelvin Force Microscopy technique is exploited to obtain quantitative information on the local polarization dependences in strontium barium niobate epitaxial thin films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"35 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91187794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297760
S. Hidaka, Jeong Hun Kim, H. Jung, Yooseob Song, Se Bin Kim, K. H. Baek, T. Sung
The relationship between deformation degree and curvature to the output voltage of piezoelectric system was analyzed. The calculated data and experimental data were compared. The experiment was held by using tip mass of 10 g, 20 g, and 30 g for the various thickness of piezoelectric material as 0.15 mm and 0.2 mm for various type design of supplemental plate. As results, at the vibration acceleration of 4 m/s2, the lowest average Ix value was resulted the highest voltage of 26.12 V. However, when the vibration acceleration of 40 m/s2, the lowest standard deviation of curvature ratio, ρ, and resulted the highest voltage of 58.98 V. This study proves that the deformation degree and curvature ration can be controlled.
{"title":"Design of supplemental plate for piezoelectric system to distribute impact force","authors":"S. Hidaka, Jeong Hun Kim, H. Jung, Yooseob Song, Se Bin Kim, K. H. Baek, T. Sung","doi":"10.1109/ISAF.2012.6297760","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297760","url":null,"abstract":"The relationship between deformation degree and curvature to the output voltage of piezoelectric system was analyzed. The calculated data and experimental data were compared. The experiment was held by using tip mass of 10 g, 20 g, and 30 g for the various thickness of piezoelectric material as 0.15 mm and 0.2 mm for various type design of supplemental plate. As results, at the vibration acceleration of 4 m/s2, the lowest average Ix value was resulted the highest voltage of 26.12 V. However, when the vibration acceleration of 40 m/s2, the lowest standard deviation of curvature ratio, ρ, and resulted the highest voltage of 58.98 V. This study proves that the deformation degree and curvature ration can be controlled.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"53 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76486656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297844
E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin
Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350°C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300°C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the film substrate interface are not primarily responsible for the observed self-polarization effect in our films.
{"title":"Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films","authors":"E. Araújo, E. C. Lima, I. Bdikin, A. Kholkin","doi":"10.1109/ISAF.2012.6297844","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297844","url":null,"abstract":"Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350°C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300°C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the film substrate interface are not primarily responsible for the observed self-polarization effect in our films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74615825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297784
G. Beckers, L. Pirnay, B. Dehez
Piezoelectric materials show interesting properties for developing actuators but most of the times they must be integrated in a stroke amplification structure. This paper presents a ring-shape Recurve structure that allows better integration in a mechatronics system as well as a good stroke. Two models based on Euler-Bernoulli beams theory are provided. Both consider only a bending load and the piezoelectric effect but one is a straight beam and the other is a curved beam. A finite-element model is used to show the limits of the hypothesis.
{"title":"Design and modelling of a ring-shape Recurve piezoelectric actuator","authors":"G. Beckers, L. Pirnay, B. Dehez","doi":"10.1109/ISAF.2012.6297784","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297784","url":null,"abstract":"Piezoelectric materials show interesting properties for developing actuators but most of the times they must be integrated in a stroke amplification structure. This paper presents a ring-shape Recurve structure that allows better integration in a mechatronics system as well as a good stroke. Two models based on Euler-Bernoulli beams theory are provided. Both consider only a bending load and the piezoelectric effect but one is a straight beam and the other is a curved beam. A finite-element model is used to show the limits of the hypothesis.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78640521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297763
Jing-zhong Xiao, J. A. Paixiao, M. M. Costa, Kui Liu, Xinyi Zhang
Pb(Fe1/2Nb1/2)O3-PbTiO3 (PFNT) is a multiferroic compound having electric and magnetic orders. To further explore the structural nature of ferroic characteristics in this material, the dielectric properties and structures of Pb(Fe1/2Nb1/2)1-xTixO3 (x=0.07 and 0.48) single crystals were investigated by a combination of temperature-dependent dielectric spectra, XRD, Raman and x-ray absorption fine-structure (XAFS) spectra. Both samples exhibit a frequency-dependent dielectric anomaly, which is significantly correlated to the local structure differences.
{"title":"Local structure and dielectric behavior of Pb(Fe1/2Nb1/2)03-PbTiO3 single crystals","authors":"Jing-zhong Xiao, J. A. Paixiao, M. M. Costa, Kui Liu, Xinyi Zhang","doi":"10.1109/ISAF.2012.6297763","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297763","url":null,"abstract":"Pb(Fe<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> (PFNT) is a multiferroic compound having electric and magnetic orders. To further explore the structural nature of ferroic characteristics in this material, the dielectric properties and structures of Pb(Fe<sub>1/2</sub>Nb<sub>1/2</sub>)<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> (x=0.07 and 0.48) single crystals were investigated by a combination of temperature-dependent dielectric spectra, XRD, Raman and x-ray absorption fine-structure (XAFS) spectra. Both samples exhibit a frequency-dependent dielectric anomaly, which is significantly correlated to the local structure differences.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"39 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90584259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297863
Sugandha, A. Jha
In the present work yttrium substituted samples of compositions Sr1-xYxBi2Ta2O9 (x=0.0-0.1) were synthesized by solid state reaction method. The synthesized specimens were characterized for their structural and electrical properties. X-ray diffractograms of the samples reveal the single phase layered perovskite structure formation for yttrium content x ≤ 0.05. The temperature variation of dielectric constant shows that the Curie temperature (Tc) decreases on increasing the yttrium concentration. The dielectric loss reduces significantly with yttrium substitution. The ferroelectric properties improve with Y substitution and the maximum value of remnant polarization is observed for the composition with x =0.05. The observations have been discussed in terms of contribution from the cation vacancies introduced into the lattice structure due to donor substitution.
{"title":"Investigations of dielectric and ferroelectric properties of yttrium substituted SrBi2Ta2O9 ferroelectric ceramics: Investigations of yttrium substituted SBT ferroelectric ceramics","authors":"Sugandha, A. Jha","doi":"10.1109/ISAF.2012.6297863","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297863","url":null,"abstract":"In the present work yttrium substituted samples of compositions Sr1-xYxBi2Ta2O9 (x=0.0-0.1) were synthesized by solid state reaction method. The synthesized specimens were characterized for their structural and electrical properties. X-ray diffractograms of the samples reveal the single phase layered perovskite structure formation for yttrium content x ≤ 0.05. The temperature variation of dielectric constant shows that the Curie temperature (Tc) decreases on increasing the yttrium concentration. The dielectric loss reduces significantly with yttrium substitution. The ferroelectric properties improve with Y substitution and the maximum value of remnant polarization is observed for the composition with x =0.05. The observations have been discussed in terms of contribution from the cation vacancies introduced into the lattice structure due to donor substitution.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"25 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86836465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297826
M. Ragheb, R. Renoud, C. Borderon, H. Gundel
The application of an electrical field E or a mechanical stress σ on a ferroïc single crystal leads to the switching of the dipolar moments inducing the motion of domain walls. According to the approach that we have developed to model the movement of domain walls, we established a relationship between the dielectric (or the piezoelectric) properties and the applied constraints. In this model, we calculate the relaxation time which is the ratio between the restoring force and the friction force. On the other hand the dielectric constant ε and the piezoelectric coefficient d are generally considered as dependent with the relaxation time, so they are functions of the constraint. This result permits us to obtain the ε-E and d-E butterfly loops. This model is potentially applied when the constraint amplitudes E0 is higher than the coercive constraint Ec. Predictions of the model for single crystals are in well agreement with experimental data presented in literature.
{"title":"Modeling of the relaxation time of a ferroïc single crystal","authors":"M. Ragheb, R. Renoud, C. Borderon, H. Gundel","doi":"10.1109/ISAF.2012.6297826","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297826","url":null,"abstract":"The application of an electrical field E or a mechanical stress σ on a ferroïc single crystal leads to the switching of the dipolar moments inducing the motion of domain walls. According to the approach that we have developed to model the movement of domain walls, we established a relationship between the dielectric (or the piezoelectric) properties and the applied constraints. In this model, we calculate the relaxation time which is the ratio between the restoring force and the friction force. On the other hand the dielectric constant ε and the piezoelectric coefficient d are generally considered as dependent with the relaxation time, so they are functions of the constraint. This result permits us to obtain the ε-E and d-E butterfly loops. This model is potentially applied when the constraint amplitudes E0 is higher than the coercive constraint Ec. Predictions of the model for single crystals are in well agreement with experimental data presented in literature.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86900169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297813
Gui-Fang Zhang, M. Cao, H. Hao, Hanxing Liu
Bismuth strontium titanate ceramics are rarely used for energy storage. In this paper, the energy storage characteristics of bismuth strontium titanate ceramics (1-(x/3))SrTiO3-(x/3)(Bi2O3·3TiO2) were systematically researched. The traditional solid phase sintering method was employed for preparing bismuth strontium titanate ceramics. The frequency dependence of dielectric constant, the frequency dependence of the dielectric loss, and the DC electric field dependence of dielectric constant were measured. The energy storage density was obtained by integrating the area within the polarization axis and the discharge curve in the polarization-electric field (P-E) curve. Experimental results show that, when x=0.15, (1-(x/3))SrTiO3-(x/3)(Bi2O3·3TiO2) ceramic has high dielectric constant, fine frequency stability, high resistivity, low dielectric loss and weak DC electric field dependence of dielectric constant. And its energy storage density could achieve 1.63 J/cm3 at 217.6 kV/cm electric field. Thus, it may possess the potential being used as a kind of energy storage dielectric material.
{"title":"Energy storage characteristics in (1-(x/3))SrTiO3-(x/3)(Bi2O3•3TiO2) ceramics","authors":"Gui-Fang Zhang, M. Cao, H. Hao, Hanxing Liu","doi":"10.1109/ISAF.2012.6297813","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297813","url":null,"abstract":"Bismuth strontium titanate ceramics are rarely used for energy storage. In this paper, the energy storage characteristics of bismuth strontium titanate ceramics (1-(x/3))SrTiO3-(x/3)(Bi2O3·3TiO2) were systematically researched. The traditional solid phase sintering method was employed for preparing bismuth strontium titanate ceramics. The frequency dependence of dielectric constant, the frequency dependence of the dielectric loss, and the DC electric field dependence of dielectric constant were measured. The energy storage density was obtained by integrating the area within the polarization axis and the discharge curve in the polarization-electric field (P-E) curve. Experimental results show that, when x=0.15, (1-(x/3))SrTiO3-(x/3)(Bi2O3·3TiO2) ceramic has high dielectric constant, fine frequency stability, high resistivity, low dielectric loss and weak DC electric field dependence of dielectric constant. And its energy storage density could achieve 1.63 J/cm3 at 217.6 kV/cm electric field. Thus, it may possess the potential being used as a kind of energy storage dielectric material.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81105912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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