Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297765
M. Stolze, T. Herrmann, B. Weigand, J. L’huillier
We present single shot experiments at different pulse energies for LiNbO3 on c+-side and c--side by using a laser wavelength of 355 nm and a pulse duration of about 10 ps. Furthermore, we demonstrate laser micromachined grooves with high spatial pulse overlap on the c+-side of LiNbO3. Here a (rms) sidewall roughness as low as 20 nm has been achieved at an ablation depth of 1.2μm.
{"title":"Laser microstructuring of congruent lithium niobate by UV ps-pulses","authors":"M. Stolze, T. Herrmann, B. Weigand, J. L’huillier","doi":"10.1109/ISAF.2012.6297765","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297765","url":null,"abstract":"We present single shot experiments at different pulse energies for LiNbO<sub>3</sub> on c<sup>+</sup>-side and c<sup>-</sup>-side by using a laser wavelength of 355 nm and a pulse duration of about 10 ps. Furthermore, we demonstrate laser micromachined grooves with high spatial pulse overlap on the c<sup>+</sup>-side of LiNbO<sub>3</sub>. Here a (rms) sidewall roughness as low as 20 nm has been achieved at an ablation depth of 1.2μm.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"120 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79380280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297802
Jung-rae Noh, Kab-soo Lee, J. Yoo
In this study, [Li0.04(Na0.54+xK0.46)0.96](Nb0.81Ta0.15 Sb0.04)O3 ceramics are prepared by the conventional solid-state solution processes. All the samples have high density, ranging from 4.72 to 4.77(g/cm3). The dielectric and piezoelectric properties were enhanced due to Na excess. As the result, excellent properties of density = 4.73(g/cm3), kp = 0.46, and d33 = 279(pC/N) were obtained in the composition with x = 0.005.
{"title":"Dielectric and piezoelectric properties of (Li0.04 (Na0.54+xK0.46)0.96(Nb0.81Ta0.15Sb0.04) O3 ceramics","authors":"Jung-rae Noh, Kab-soo Lee, J. Yoo","doi":"10.1109/ISAF.2012.6297802","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297802","url":null,"abstract":"In this study, [Li<sub>0.04</sub>(Na<sub>0.54+x</sub>K<sub>0.46</sub>)<sub>0.96</sub>](Nb<sub>0.81</sub>Ta<sub>0.15</sub> Sb<sub>0.04</sub>)O<sub>3</sub> ceramics are prepared by the conventional solid-state solution processes. All the samples have high density, ranging from 4.72 to 4.77(g/cm<sup>3</sup>). The dielectric and piezoelectric properties were enhanced due to Na excess. As the result, excellent properties of density = 4.73(g/cm<sup>3</sup>), k<sub>p</sub> = 0.46, and d<sub>33</sub> = 279(pC/N) were obtained in the composition with x = 0.005.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"44 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86853234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297789
E. Smirnova, A. Sotnikov, S. Ktitorov, H. Schmidt, M. Weihnacht
The longitudinal acoustic wave velocity and attenuation in PbFe1/2Nb1/2O3 and PbMg1/3Nb2/3O3 ceramics have been measured by pulse-echo technique at a frequency of 10 MHz in the temperature range from 200 to 700 K. The anomalies observed in the sound velocity and attenuation behavior versus temperature are correlated with temperature range of relaxor ferroelectric state (PbFe1/2Nb1/2O3) and Burns temperatures.
{"title":"High temperature acoustic effects in relaxors PbMg1/3Nb2/3O3 and PbFe1/2Nb1/2O3","authors":"E. Smirnova, A. Sotnikov, S. Ktitorov, H. Schmidt, M. Weihnacht","doi":"10.1109/ISAF.2012.6297789","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297789","url":null,"abstract":"The longitudinal acoustic wave velocity and attenuation in PbFe<sub>1/2</sub>Nb<sub>1/2</sub>O<sub>3</sub> and PbMg<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub> ceramics have been measured by pulse-echo technique at a frequency of 10 MHz in the temperature range from 200 to 700 K. The anomalies observed in the sound velocity and attenuation behavior versus temperature are correlated with temperature range of relaxor ferroelectric state (PbFe<sub>1/2</sub>Nb<sub>1/2</sub>O<sub>3</sub>) and Burns temperatures.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85941835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1080/00150193.2013.821017
E. Ļaksa, Y. Dekhtyar, A. Katashev, M. Romanova, S. Yudin
Ultraviolet (UV) radiation is able to cause biological changes at the cellular and molecular level. To study biological effects of UV radiation, UV detector is required. 10 monolayer thick ferroelectric P(VDF-TrFE) films consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE), or P(VDF-TrFE 70:30), were investigated as a possible material of UV detector. The films were deposited on a glass substrate using Langmuir-Blodgett technique. Changes in surface electric potential of P(VDF-TrFE 70:30) films under influence of UV radiation were investigated by Kelvin force microscopy. A hypothesis was proposed that UV radiation was well absorbed by the glass substrate changing its surface charge. This charge in turn changed polarization of P(VDF-TrFE 70:30) film leading to changes in its surface electric potential. It was found that after 6 minutes of UV irradiation surface electric potential of P(VDF-TrFE 70:30) films decreased and no changes were observed further increasing irradiation time. However, surface electric potential of the bare glass substrate continued to decrease increasing irradiation time. It was also found that surface electric potential of P(VDF-TrFE 70:30) films relaxed to its initial value within half an hour after the irradiation was stopped. The relaxation obeyed exponential law. The study suggests that P(VDF-TrFE 70:30) films deposited on the glass substrate are sensitive to UV radiation and might be able to serve as a material for an UV dosimeter, however, further studies are required.
{"title":"Influence of ultraviolet radiation on surface electric potential of P(VDF-TrFE) films","authors":"E. Ļaksa, Y. Dekhtyar, A. Katashev, M. Romanova, S. Yudin","doi":"10.1080/00150193.2013.821017","DOIUrl":"https://doi.org/10.1080/00150193.2013.821017","url":null,"abstract":"Ultraviolet (UV) radiation is able to cause biological changes at the cellular and molecular level. To study biological effects of UV radiation, UV detector is required. 10 monolayer thick ferroelectric P(VDF-TrFE) films consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE), or P(VDF-TrFE 70:30), were investigated as a possible material of UV detector. The films were deposited on a glass substrate using Langmuir-Blodgett technique. Changes in surface electric potential of P(VDF-TrFE 70:30) films under influence of UV radiation were investigated by Kelvin force microscopy. A hypothesis was proposed that UV radiation was well absorbed by the glass substrate changing its surface charge. This charge in turn changed polarization of P(VDF-TrFE 70:30) film leading to changes in its surface electric potential. It was found that after 6 minutes of UV irradiation surface electric potential of P(VDF-TrFE 70:30) films decreased and no changes were observed further increasing irradiation time. However, surface electric potential of the bare glass substrate continued to decrease increasing irradiation time. It was also found that surface electric potential of P(VDF-TrFE 70:30) films relaxed to its initial value within half an hour after the irradiation was stopped. The relaxation obeyed exponential law. The study suggests that P(VDF-TrFE 70:30) films deposited on the glass substrate are sensitive to UV radiation and might be able to serve as a material for an UV dosimeter, however, further studies are required.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"14 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85305555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297830
A. Leuliet, N. Jamond, R. Bisaro, G. Garry, M. Pham-thi, A. Ziaei, L. Michalas, M. Koutsoureli, G. Papaioannou
This paper describes the fabrication and characterization of 0.9PMN-0.1PT MIM capacitors with platinum electrodes. The films have been deposited by Pulsed Laser Deposition (PLD) on a buffer layer (SrRuO3) which has been demonstrated to be essential to enhance the growth of PMN-PT instead of pyrochlore. The temperature analysis of the current voltage characteristics revealed that the dc conductivity is interface controlled due to Schottky emission. The other important parameters determining the device current are magnitude, polarity and duration of the applied bias.
{"title":"Fabrication and electrical properties of 0.9PMN-0.1PT MIM capacitors","authors":"A. Leuliet, N. Jamond, R. Bisaro, G. Garry, M. Pham-thi, A. Ziaei, L. Michalas, M. Koutsoureli, G. Papaioannou","doi":"10.1109/ISAF.2012.6297830","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297830","url":null,"abstract":"This paper describes the fabrication and characterization of 0.9PMN-0.1PT MIM capacitors with platinum electrodes. The films have been deposited by Pulsed Laser Deposition (PLD) on a buffer layer (SrRuO3) which has been demonstrated to be essential to enhance the growth of PMN-PT instead of pyrochlore. The temperature analysis of the current voltage characteristics revealed that the dc conductivity is interface controlled due to Schottky emission. The other important parameters determining the device current are magnitude, polarity and duration of the applied bias.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"72 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86730656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297764
Lan Xu, Jing-zhong Xiao, J. A. Paixiao, M. M. Costa
Bismuth based ferroelectrics such as BiYbO3-PbTiO3 solid state solutions were predicted to exhibit a Curie temperature (Tc) as high as 650°C, and meet the requirement for working under high temperature. In this work, we synthesized xBiYbO3-(1-x)PbTiO3 (BYPT) based ceramics by solid state reaction processing and performed the growth for BYPT single crystals by the flux method.
{"title":"Flux growth of high curie temperature single crystals","authors":"Lan Xu, Jing-zhong Xiao, J. A. Paixiao, M. M. Costa","doi":"10.1109/ISAF.2012.6297764","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297764","url":null,"abstract":"Bismuth based ferroelectrics such as BiYbO<sub>3</sub>-PbTiO<sub>3</sub> solid state solutions were predicted to exhibit a Curie temperature (Tc) as high as 650°C, and meet the requirement for working under high temperature. In this work, we synthesized xBiYbO<sub>3</sub>-(1-x)PbTiO<sub>3</sub> (BYPT) based ceramics by solid state reaction processing and performed the growth for BYPT single crystals by the flux method.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"77 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89269269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297800
J. Kolte, A. Daryapurkar, P. Apte, P. Gopalan
Bismuth ferrite (BiFeO3) is a potential candidate for future generation of FeRAM due to its large polarization with additional advantage of being lead free. La and Mn doped BiFeO3 (BLFMO) thin films were deposited by pulsed laser deposition. Effect of oxygen partial pressure on the structural and fatigue properties were studied. It has been found that polarization of thin film is very sensitive to the oxygen partial pressure. The leakage current density found to be in the order of 10-7 A/cm2 at 200kV/cm. Ferroelectric polarization is 73 μC/cm2 and coercive field is 200kV/cm. Fatigue endurance test of BLFMO thin film at 500kV/cm shows films almost fatigue free after 108 pulses. Retention test also carried out and found that there is only 3% change in the polarization up to 105 seconds, thereby making BFO a promising candidate for memory applications.
{"title":"Effect of oxygen pressure on the structural, electrical properties of Bi0.90La0.10Fe0.95Mn0.05O3 thin films and characterization for memory applications","authors":"J. Kolte, A. Daryapurkar, P. Apte, P. Gopalan","doi":"10.1109/ISAF.2012.6297800","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297800","url":null,"abstract":"Bismuth ferrite (BiFeO3) is a potential candidate for future generation of FeRAM due to its large polarization with additional advantage of being lead free. La and Mn doped BiFeO3 (BLFMO) thin films were deposited by pulsed laser deposition. Effect of oxygen partial pressure on the structural and fatigue properties were studied. It has been found that polarization of thin film is very sensitive to the oxygen partial pressure. The leakage current density found to be in the order of 10-7 A/cm2 at 200kV/cm. Ferroelectric polarization is 73 μC/cm2 and coercive field is 200kV/cm. Fatigue endurance test of BLFMO thin film at 500kV/cm shows films almost fatigue free after 108 pulses. Retention test also carried out and found that there is only 3% change in the polarization up to 105 seconds, thereby making BFO a promising candidate for memory applications.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81366643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297790
Zunping Xu, Xiaoyang Chen, Jianguo Zhu, D. Xiao, P. Yu
Mn/Y co-doped Ba0.67Sr0.33TiO3 (Mn+Y: BST) thin films were deposited on LaNiO3 (LNO)/SiO2/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10-5 A/cm2 at an electric field of 400 kV/cm, respectively.
采用射频磁控溅射技术，在400℃的衬底温度下，在LaNiO3 (LNO)/SiO2/Si衬底上沉积了Mn/Y共掺杂Ba0.67Sr0.33TiO3 (Mn+Y: BST)薄膜。研究了退火温度对Mn+Y: BST薄膜微观结构和电性能的影响。x射线衍射(XRD)和扫描电镜(SEM)研究表明，所有薄膜表面致密且无裂纹，具有钙钛矿结构。经700℃退火的Mn+Y: BST薄膜电学性能最佳，介电常数为875，介电损耗为0.032，室温和100 kHz下的可调性为60%，400 kV/cm电场下的漏电流密度为6.7×10-5 a /cm2。
{"title":"Influence of annealing temperature on properties of Mn/Y co-doped Ba0.67Sr0.33TiO3 thin film prepared by RF magnetron sputtering","authors":"Zunping Xu, Xiaoyang Chen, Jianguo Zhu, D. Xiao, P. Yu","doi":"10.1109/ISAF.2012.6297790","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297790","url":null,"abstract":"Mn/Y co-doped Ba<sub>0.67</sub>Sr<sub>0.33</sub>TiO<sub>3</sub> (Mn+Y: BST) thin films were deposited on LaNiO<sub>3</sub> (LNO)/SiO<sub>2</sub>/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10<sup>-5</sup> A/cm<sup>2</sup> at an electric field of 400 kV/cm, respectively.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79544552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297779
Z. Ozer, A. Mamedov, E. Ozbay
This paper present the design and modeling of the micro-electromechanical systems (MEMS) on the ternary ferroelectric compounds (PZT and BaxSr1-xTiO3) based by using finite element model (FEM) simulation.
{"title":"Ferroelectric based microgyroscope for inertial measurement unit: Modeling and simulation","authors":"Z. Ozer, A. Mamedov, E. Ozbay","doi":"10.1109/ISAF.2012.6297779","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297779","url":null,"abstract":"This paper present the design and modeling of the micro-electromechanical systems (MEMS) on the ternary ferroelectric compounds (PZT and Ba<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub>) based by using finite element model (FEM) simulation.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84760840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297780
H. Koc, A. Mamedov, E. Ozbay
We have performed a first principles study of structural, electronic, and optical properties of rhombohedral Sb2Te3 and Bi2Te3 compounds using the density functional theory within the local density approximation. The lattice parameters, bulk modulus, and its pressure derivatives of these compounds have been obtained. The linear photon-energy dependent dielectric functions and some optical properties such as the energy-loss function, the effective number of valance electrons and the effective optical dielectric constant are calculated and presented in the study.
{"title":"Optical properties and electronic band structure of topological insulators on A2 5B36 compound based","authors":"H. Koc, A. Mamedov, E. Ozbay","doi":"10.1109/ISAF.2012.6297780","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297780","url":null,"abstract":"We have performed a first principles study of structural, electronic, and optical properties of rhombohedral Sb2Te3 and Bi2Te3 compounds using the density functional theory within the local density approximation. The lattice parameters, bulk modulus, and its pressure derivatives of these compounds have been obtained. The linear photon-energy dependent dielectric functions and some optical properties such as the energy-loss function, the effective number of valance electrons and the effective optical dielectric constant are calculated and presented in the study.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"117 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79775099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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