Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866041
A. An'shakov, V. Cherednichenko, Ma Tengcai, E. K. Urbakh, V. Faleev
The results of investigations and development of production technology of low temperature resistance heaters by means of coating are presented. An arc plasma generator with interelectrode insertion (IEI) for coating resistance and insulating layers is described. Some peculiarities of plasma coating technology for flat resistance heaters production are considered.
{"title":"Electric heater development by means of plasma spraying","authors":"A. An'shakov, V. Cherednichenko, Ma Tengcai, E. K. Urbakh, V. Faleev","doi":"10.1109/KORUS.2000.866041","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866041","url":null,"abstract":"The results of investigations and development of production technology of low temperature resistance heaters by means of coating are presented. An arc plasma generator with interelectrode insertion (IEI) for coating resistance and insulating layers is described. Some peculiarities of plasma coating technology for flat resistance heaters production are considered.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86625974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.865964
K. Kwack
The intdon benyeen immunoglobulin and protein G may not be restricted to the Fc portion of antibodies, as many merent F(ab')Z or Fab hgments can also bind to protein G. I found both Fab and F(ab')Z of 145-2C11, a hamster anti-mouse CD~E antibody, bund to a protein Gsepharose. Ink"&, Fab and F(ab")Z of 145-2C11 did not bind to a protein A-sephse. The bin- of Fab and F(abh of 145-2C 11 to protein G provided a usdid method to mnove proteases, chopped hgtnents of the Fc region, and other contarmnatingproteins. ~~g~~iin~e~t~~on ~~be~m~edby~apro teinA-~~se, because the Fab and F(abh portions of 145-2C11 did not bind to a protein Aepharose. The @c be of Fab and F(abh portions of 145-2C11 to a protein Gsepharose but not to a protein A-sepa, and binding of intact 145-2C11 to both protein A- and G-sepharose wiu be useful to develop an &ktive purification protocol for Fab and F(ab')Z portions of 145-2Cll.
{"title":"Binding of F(ab')/sub 2/ of ANTI-CD3/spl epsiv/ antibody to protein G but not to protein A","authors":"K. Kwack","doi":"10.1109/KORUS.2000.865964","DOIUrl":"https://doi.org/10.1109/KORUS.2000.865964","url":null,"abstract":"The intdon benyeen immunoglobulin and protein G may not be restricted to the Fc portion of antibodies, as many merent F(ab')Z or Fab hgments can also bind to protein G. I found both Fab and F(ab')Z of 145-2C11, a hamster anti-mouse CD~E antibody, bund to a protein Gsepharose. Ink\"&, Fab and F(ab\")Z of 145-2C11 did not bind to a protein A-sephse. The bin- of Fab and F(abh of 145-2C 11 to protein G provided a usdid method to mnove proteases, chopped hgtnents of the Fc region, and other contarmnatingproteins. ~~g~~iin~e~t~~on ~~be~m~edby~apro teinA-~~se, because the Fab and F(abh portions of 145-2C11 did not bind to a protein Aepharose. The @c be of Fab and F(abh portions of 145-2C11 to a protein Gsepharose but not to a protein A-sepa, and binding of intact 145-2C11 to both protein A- and G-sepharose wiu be useful to develop an &ktive purification protocol for Fab and F(ab')Z portions of 145-2Cll.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86689206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866010
V. Gubarev
The purpose of this work is comparison of new kind of modelling of real objects-variant modelling (VM). The definitions of general terms and basic methods of variant modelling, the problems of selection, ordering and choice of models in such modelling, the basic of vector-modelling are discussed. The relation between VM and intelligent analysis of data are described.
{"title":"Variant (variety) modelling and data analysis","authors":"V. Gubarev","doi":"10.1109/KORUS.2000.866010","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866010","url":null,"abstract":"The purpose of this work is comparison of new kind of modelling of real objects-variant modelling (VM). The definitions of general terms and basic methods of variant modelling, the problems of selection, ordering and choice of models in such modelling, the basic of vector-modelling are discussed. The relation between VM and intelligent analysis of data are described.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91474743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866022
A. Berdinsky, Y. Shevtsov, Y.A. Saranchin, S. V. Trubin, Y. Shubin, B. Ayupov, D. Fink, L. T. Chadderton, J. Lee
We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/C/sub 60//M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was /spl sim/0.2-1.0 /spl mu/m. The area of the C/sub 60/ film under the top contact was /spl sim/1 cm. The specimens have been investigated by infrared spectroscopy, spectrophotometry, ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd, Ag, Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/C/sub 60/ and other sandwich structures the conductivities show a semiconductor-like behaviour.
{"title":"The study on electro-physical properties of sandwich structures based on fullerite films","authors":"A. Berdinsky, Y. Shevtsov, Y.A. Saranchin, S. V. Trubin, Y. Shubin, B. Ayupov, D. Fink, L. T. Chadderton, J. Lee","doi":"10.1109/KORUS.2000.866022","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866022","url":null,"abstract":"We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/C/sub 60//M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was /spl sim/0.2-1.0 /spl mu/m. The area of the C/sub 60/ film under the top contact was /spl sim/1 cm. The specimens have been investigated by infrared spectroscopy, spectrophotometry, ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd, Ag, Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/C/sub 60/ and other sandwich structures the conductivities show a semiconductor-like behaviour.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90213831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.865952
E. Ivanovskaya, Y.B. Bobleva, Y. A. Karbainov, A. Gusakova
{"title":"Inversional voltamperometric and prarmacokinetic analysis of the cardiology medications","authors":"E. Ivanovskaya, Y.B. Bobleva, Y. A. Karbainov, A. Gusakova","doi":"10.1109/KORUS.2000.865952","DOIUrl":"https://doi.org/10.1109/KORUS.2000.865952","url":null,"abstract":"","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79626107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866054
B. D. Annin, G.I. Rastorguev
The method of a meshing on finite elements of doubly-connected areas based on use conformal of mapping functions complex variable is circumscribed. The method of control of the form of area in a problem of optimization is offered. This method is based on a propose method of meshing. Keyword: meshing, conformal of mapping functions, shape optimization
{"title":"Application of conformal mappings and finite element method in problems of shape optimization of the doubly-connected elements","authors":"B. D. Annin, G.I. Rastorguev","doi":"10.1109/KORUS.2000.866054","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866054","url":null,"abstract":"The method of a meshing on finite elements of doubly-connected areas based on use conformal of mapping functions complex variable is circumscribed. The method of control of the form of area in a problem of optimization is offered. This method is based on a propose method of meshing. Keyword: meshing, conformal of mapping functions, shape optimization","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79704852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866029
Dong-Chual Kang, Sang-Bock Cho
As the density of memories increases, unwanted interference between cells is increased and testing high density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. In this paper, a new thing method and an efficient BIST algorithm for NPSFs are proposed. Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a four-cell layout is used. This four-cell layout requires smaller test vectors and shorter test time. A CMOS column decoder and the parallel comparator proposed by P. Mazumder and J.H. Patel are modified to implement test procedure which is appropriate for the four-cell layout. Consequently, these reduce the number of transistors used for a BIST circuit. Also, we present properties of the algorithm, such as its capability to detect stuck-at faults, transition faults, and conventional pattern sensitive faults.
{"title":"An efficient built-in self-test algorithm for neighborhood pattern sensitive faults in high-density memories","authors":"Dong-Chual Kang, Sang-Bock Cho","doi":"10.1109/KORUS.2000.866029","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866029","url":null,"abstract":"As the density of memories increases, unwanted interference between cells is increased and testing high density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. In this paper, a new thing method and an efficient BIST algorithm for NPSFs are proposed. Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a four-cell layout is used. This four-cell layout requires smaller test vectors and shorter test time. A CMOS column decoder and the parallel comparator proposed by P. Mazumder and J.H. Patel are modified to implement test procedure which is appropriate for the four-cell layout. Consequently, these reduce the number of transistors used for a BIST circuit. Also, we present properties of the algorithm, such as its capability to detect stuck-at faults, transition faults, and conventional pattern sensitive faults.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81180864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866058
V. Levin
The class of nonlinear tasks for flexible rods, even in the case of flat deformation, is rather complicated. Closed form solutions are possible only for some special cases. An algorithm of numerical integration of the nonlinear equations of equilibrium of a flat rod by a Runge-Kutta method is considered. The boundary conditions on the extremity of a rod are satisfied approximately. The projection equations are obtained from the common vectorial equations of equilibrium. As solving functions the projections of a transition vector and internal forces vector on global axes, angle of a normal's turn to the rod axis, and internal flexing, are chosen.
{"title":"Calculation of nonlinear deformation of a flexible rod","authors":"V. Levin","doi":"10.1109/KORUS.2000.866058","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866058","url":null,"abstract":"The class of nonlinear tasks for flexible rods, even in the case of flat deformation, is rather complicated. Closed form solutions are possible only for some special cases. An algorithm of numerical integration of the nonlinear equations of equilibrium of a flat rod by a Runge-Kutta method is considered. The boundary conditions on the extremity of a rod are satisfied approximately. The projection equations are obtained from the common vectorial equations of equilibrium. As solving functions the projections of a transition vector and internal forces vector on global axes, angle of a normal's turn to the rod axis, and internal flexing, are chosen.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88564942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.866103
A. Ilyin, A. Gromov, A. Reshetov, D. Tihonov, G. V. Yablunowsky
Ultrafine aluminum powders (UFAP) have high reactivity in several oxidation processes. Air as oxidizer allows obtaining aluminum nitride as the basic phase in the oxidation products: ultrafine aluminum powders react with air nitrogen by the presence of oxygen. By reaction with water, UFAP leads to much higher energetic and transformation degrees than regular powders. Such unusual behavior of UFAP (especially electroexplosive UFAP) is discussed it terms of particle size (less than 1 /spl mu/m) and collision structure. The structure and phase pecularities of UFAP are also discussed.
{"title":"Reactionary ability of aluminum ultrafine powders in various oxidation processes","authors":"A. Ilyin, A. Gromov, A. Reshetov, D. Tihonov, G. V. Yablunowsky","doi":"10.1109/KORUS.2000.866103","DOIUrl":"https://doi.org/10.1109/KORUS.2000.866103","url":null,"abstract":"Ultrafine aluminum powders (UFAP) have high reactivity in several oxidation processes. Air as oxidizer allows obtaining aluminum nitride as the basic phase in the oxidation products: ultrafine aluminum powders react with air nitrogen by the presence of oxygen. By reaction with water, UFAP leads to much higher energetic and transformation degrees than regular powders. Such unusual behavior of UFAP (especially electroexplosive UFAP) is discussed it terms of particle size (less than 1 /spl mu/m) and collision structure. The structure and phase pecularities of UFAP are also discussed.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84731099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-27DOI: 10.1109/KORUS.2000.865931
M. Noskov, A. Malinovski
The physical-mathematical models of prebreakdown phenomena in solid dielectrics have been created in the framework of the fractal stochastic-deterministic approach. The models use the stochastic rules to describe the growth of the discharge channels. Deterministic laws are used to describe the electric field, the charge and energy dynamics within the discharge channels and the dielectric. Application programs for the computer simulation of discharge development have been worked out on the base of the models. Computer investigations of temporal-spatial, current and field characteristics of discharge structures development have been carried out for liquid insulators.
{"title":"Fractal stochastic-deterministic approach to modeling of electric discharge development in liquid dielectrics","authors":"M. Noskov, A. Malinovski","doi":"10.1109/KORUS.2000.865931","DOIUrl":"https://doi.org/10.1109/KORUS.2000.865931","url":null,"abstract":"The physical-mathematical models of prebreakdown phenomena in solid dielectrics have been created in the framework of the fractal stochastic-deterministic approach. The models use the stochastic rules to describe the growth of the discharge channels. Deterministic laws are used to describe the electric field, the charge and energy dynamics within the discharge channels and the dielectric. Application programs for the computer simulation of discharge development have been worked out on the base of the models. Computer investigations of temporal-spatial, current and field characteristics of discharge structures development have been carried out for liquid insulators.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90885190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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