Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241634
Xujiao Gao, Andy Huang, Nathaniel Trask, Shahed Reza
We present a Physics-Informed Graph Neural Network (pigNN) methodology for rapid and automated compact model development. It brings together the inherent strengths of data-driven machine learning, high-fidelity physics in TCAD simulations, and knowledge contained in existing compact models. In this work, we focus on developing a neural network (NN) based compact model for a non-ideal PN diode that represents one nonlinear edge in a pigNN graph. This model accurately captures the smooth transition between the exponential and quasi-linear response regions. By learning voltage dependent non-ideality factor using NN and employing an inverse response function in the NN loss function, the model also accurately captures the voltage dependent recombination effect. This NN compact model serves as basis model for a PN diode that can be a single device or represent an isolated diode in a complex device determined by topological data analysis (TDA) methods. The pigNN methodology is also applicable to derive reduced order models in other engineering areas.
{"title":"Physics-Informed Graph Neural Network for Circuit Compact Model Development","authors":"Xujiao Gao, Andy Huang, Nathaniel Trask, Shahed Reza","doi":"10.23919/SISPAD49475.2020.9241634","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241634","url":null,"abstract":"We present a Physics-Informed Graph Neural Network (pigNN) methodology for rapid and automated compact model development. It brings together the inherent strengths of data-driven machine learning, high-fidelity physics in TCAD simulations, and knowledge contained in existing compact models. In this work, we focus on developing a neural network (NN) based compact model for a non-ideal PN diode that represents one nonlinear edge in a pigNN graph. This model accurately captures the smooth transition between the exponential and quasi-linear response regions. By learning voltage dependent non-ideality factor using NN and employing an inverse response function in the NN loss function, the model also accurately captures the voltage dependent recombination effect. This NN compact model serves as basis model for a PN diode that can be a single device or represent an isolated diode in a complex device determined by topological data analysis (TDA) methods. The pigNN methodology is also applicable to derive reduced order models in other engineering areas.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114866445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241679
A. Vaysset, S. Martinie, F. Triozon, O. Rozeau, M. Jaud, R. Escoffier, T. Poiroux
High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculated from the quantum expression of a 2-dimensional electron gas (2DEG). Here, we investigate the possibility to model HEMTs with a MOSFET-like approach whereby quantum confinement is included as an effective bandgap widening in the surface potential equation. We evidence that such a MOSFET-like approach leads to a more accurate description over the whole polarization range, especially in the moderate inversion regime. This analytical model is validated by Poisson-Schrödinger numerical simulations. Furthermore, to address a specific feature of HEMT devices, a field plate model is also presented.
{"title":"MOS-like approach for compact modeling of High-Electron-Mobility Transistor","authors":"A. Vaysset, S. Martinie, F. Triozon, O. Rozeau, M. Jaud, R. Escoffier, T. Poiroux","doi":"10.23919/SISPAD49475.2020.9241679","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241679","url":null,"abstract":"High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculated from the quantum expression of a 2-dimensional electron gas (2DEG). Here, we investigate the possibility to model HEMTs with a MOSFET-like approach whereby quantum confinement is included as an effective bandgap widening in the surface potential equation. We evidence that such a MOSFET-like approach leads to a more accurate description over the whole polarization range, especially in the moderate inversion regime. This analytical model is validated by Poisson-Schrödinger numerical simulations. Furthermore, to address a specific feature of HEMT devices, a field plate model is also presented.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133970694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241640
Qingpeng Wang, Yu De Chen, Jacky Huang, Ervin Joseph
In this paper, a wiggling active area (fin) in an advanced 1x DRAM process was analyzed and modeled using the pattern-dependent etch simulation capabilities of the SEMulator3D® semiconductor modeling software. Nonuniformity in sidewall passivation caused by hard mask pattern density loading was identified as the root cause of the wiggling profile. The calibrated model mimicked these phenomena, giving nearly the same output AA shape as the real fabrication process. The wiggling profile’s impact on device performance was assessed using the built-in drift-diffusion solver of SEMulator3D. Our analysis confirmed that the wiggling profile, induced by micro-loading during a pattern-dependent etch, has a large impact on overall electrical performance in the device. This was especially apparent with the off-state leakage, primarily due to a worse drain-induced barrier lowering effect in a fatter fin.
{"title":"A Study of Wiggling AA modeling and Its Impact on the Device Performance in Advanced DRAM","authors":"Qingpeng Wang, Yu De Chen, Jacky Huang, Ervin Joseph","doi":"10.23919/SISPAD49475.2020.9241640","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241640","url":null,"abstract":"In this paper, a wiggling active area (fin) in an advanced 1x DRAM process was analyzed and modeled using the pattern-dependent etch simulation capabilities of the SEMulator3D® semiconductor modeling software. Nonuniformity in sidewall passivation caused by hard mask pattern density loading was identified as the root cause of the wiggling profile. The calibrated model mimicked these phenomena, giving nearly the same output AA shape as the real fabrication process. The wiggling profile’s impact on device performance was assessed using the built-in drift-diffusion solver of SEMulator3D. Our analysis confirmed that the wiggling profile, induced by micro-loading during a pattern-dependent etch, has a large impact on overall electrical performance in the device. This was especially apparent with the off-state leakage, primarily due to a worse drain-induced barrier lowering effect in a fatter fin.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"57 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131532894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241646
I. Bejenari, A. Burenkov, P. Pichler, I. Deretzis, A. La Magna
Thermal transport in radial direction in Si nanowires embedded into amorphous silicon dioxide has been studied using nonequilibrium molecular dynamics simulations. For comparison, we also considered the axial heat transfer. For Si nanowires with a radius of 2.6 nm, both radial and axial thermal conductivities were found to be about independent of the SiO2 thickness ranging from 1 nm to 3 nm. The radial thermal conductivity of the Si core and of the covering SiO2 material are similar and nearly equal to 1 $Wcdot K^{-1}cdot m^{-1}$. Thermal resistances for the heat transfer from uniformly heated nanowires in radial direction are by a factor of 3 to 4 lower than those for the heat transfer in axial direction.
{"title":"Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires","authors":"I. Bejenari, A. Burenkov, P. Pichler, I. Deretzis, A. La Magna","doi":"10.23919/SISPAD49475.2020.9241646","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241646","url":null,"abstract":"Thermal transport in radial direction in Si nanowires embedded into amorphous silicon dioxide has been studied using nonequilibrium molecular dynamics simulations. For comparison, we also considered the axial heat transfer. For Si nanowires with a radius of 2.6 nm, both radial and axial thermal conductivities were found to be about independent of the SiO2 thickness ranging from 1 nm to 3 nm. The radial thermal conductivity of the Si core and of the covering SiO2 material are similar and nearly equal to 1 $Wcdot K^{-1}cdot m^{-1}$. Thermal resistances for the heat transfer from uniformly heated nanowires in radial direction are by a factor of 3 to 4 lower than those for the heat transfer in axial direction.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131135875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241686
Qinqiang Zhang, Ken Suzuki, H. Miura
The electronic properties of graphene nanoribbons (GNRs) have a function of the ribbon width. It can vary from metallic-like ones to semiconductive-like ones when the width of single GNR is changed. Therefore, the novel structure of GNRs called dumbbell-shape GNR (DS-GNR) was proposed to achieve the development of highly sensitive, reliable, and deformable strain sensors. The DS-GNR consists of one long narrow GNR coalesced by two wide segments of GNRs at its both ends. The wide segments of the original DSGNR possess the metallic-like electronic properties and the narrow segment of the original DS-GNR has the semiconductive-like electronic properties. In this study, the strain-induced change of the electronic band structure of DSGNR was analyzed by using the first-principles calculations. The range of the applied uniaxial tensile strain on DS-GNR was from 0% to 10%. When the length of the narrow segment of DSGNR is longer than 4.3 nm, the effective bandgap located in the narrow segment changes obviously with the change of applied strain. The result indicates that the piezoresistive effect appears in the narrow segment of DS-GNR, and thus high strain sensitivity of its resistivity can be applied to strain sensors.
{"title":"A First-principles Study on the Strain-induced Localized Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain Sensors","authors":"Qinqiang Zhang, Ken Suzuki, H. Miura","doi":"10.23919/SISPAD49475.2020.9241686","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241686","url":null,"abstract":"The electronic properties of graphene nanoribbons (GNRs) have a function of the ribbon width. It can vary from metallic-like ones to semiconductive-like ones when the width of single GNR is changed. Therefore, the novel structure of GNRs called dumbbell-shape GNR (DS-GNR) was proposed to achieve the development of highly sensitive, reliable, and deformable strain sensors. The DS-GNR consists of one long narrow GNR coalesced by two wide segments of GNRs at its both ends. The wide segments of the original DSGNR possess the metallic-like electronic properties and the narrow segment of the original DS-GNR has the semiconductive-like electronic properties. In this study, the strain-induced change of the electronic band structure of DSGNR was analyzed by using the first-principles calculations. The range of the applied uniaxial tensile strain on DS-GNR was from 0% to 10%. When the length of the narrow segment of DSGNR is longer than 4.3 nm, the effective bandgap located in the narrow segment changes obviously with the change of applied strain. The result indicates that the piezoresistive effect appears in the narrow segment of DS-GNR, and thus high strain sensitivity of its resistivity can be applied to strain sensors.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130926802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241649
G. Gandus, Youseung Lee, D. Passerone, M. Luisier
In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Green’s function (NEGF) approach with significant improvements in the computational efficiency without sacrificing the accuracy of results. To exemplify the merits of the proposed method we investigate the carrier density dependency of contact resistances in silicon nanowire devices connected to bulk metallic contacts.
{"title":"Efficient partitioning of surface Green’s function: toward ab initio contact resistance study.","authors":"G. Gandus, Youseung Lee, D. Passerone, M. Luisier","doi":"10.23919/SISPAD49475.2020.9241649","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241649","url":null,"abstract":"In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Green’s function (NEGF) approach with significant improvements in the computational efficiency without sacrificing the accuracy of results. To exemplify the merits of the proposed method we investigate the carrier density dependency of contact resistances in silicon nanowire devices connected to bulk metallic contacts.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133624987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241619
R. Bayle, O. Cueto, S. Blonkowski, T. Philippe, H. Henry, M. Plapp
The ternary alloy GeSbTe is widely used as material for phase-change memories. Thanks to an optimized Ge-rich GeSbTe alloy, the crystallizion temperature of the alloy is increased and the stability requirements of high working temperature required for automotive applications are fullfilled, but the crystallization of the Ge-rich alloy proceeds with a composition change and a phase separation. We have developed a multi-phase-field model for the crystallization of the Ge-rich GeSbTe alloy and we have coupled it to an electro-thermal solver. This model is able to capture both the emergence of a two-phase polycristalline structure starting from an initially amorphous material, and the melting and recrystallization during the device operations.
{"title":"Coupling the Multi Phase-Field Method with an Electro-Thermal Solver to Simulate Phase Change Mechanisms in Ge-rich GST based PCM","authors":"R. Bayle, O. Cueto, S. Blonkowski, T. Philippe, H. Henry, M. Plapp","doi":"10.23919/SISPAD49475.2020.9241619","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241619","url":null,"abstract":"The ternary alloy GeSbTe is widely used as material for phase-change memories. Thanks to an optimized Ge-rich GeSbTe alloy, the crystallizion temperature of the alloy is increased and the stability requirements of high working temperature required for automotive applications are fullfilled, but the crystallization of the Ge-rich alloy proceeds with a composition change and a phase separation. We have developed a multi-phase-field model for the crystallization of the Ge-rich GeSbTe alloy and we have coupled it to an electro-thermal solver. This model is able to capture both the emergence of a two-phase polycristalline structure starting from an initially amorphous material, and the melting and recrystallization during the device operations.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127862339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241633
H. Ryu, J. Kang
Behaviors of quantum bits (qubits) encoded to electron spins in silicon double quantum dot (Si DQD) systems are examined with a multi-scale modeling approach that combines electronic structure simulations and Thoas-Fermi calculations. Covering the full-stack functionality of Si DQD devices from electrode-driven charge controls to logic operations, we investigate the sensitivity of exchange interaction between two initialized qubits and its effect on the fidelity of controlled-NOT gate operations to understand the experimental reported feature. This preliminary work not only presents a theoretical clue for understanding the major control factors for the gate fidelity, but opens the possibility for further exploration of the engineering details of qubit logic gate devices that is hard to be uncovered with experiments due to the time and the expense.
{"title":"A Modeling Study on Performance of a CNOT Gate Devices based on Electrode-driven Si DQD Structures","authors":"H. Ryu, J. Kang","doi":"10.23919/SISPAD49475.2020.9241633","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241633","url":null,"abstract":"Behaviors of quantum bits (qubits) encoded to electron spins in silicon double quantum dot (Si DQD) systems are examined with a multi-scale modeling approach that combines electronic structure simulations and Thoas-Fermi calculations. Covering the full-stack functionality of Si DQD devices from electrode-driven charge controls to logic operations, we investigate the sensitivity of exchange interaction between two initialized qubits and its effect on the fidelity of controlled-NOT gate operations to understand the experimental reported feature. This preliminary work not only presents a theoretical clue for understanding the major control factors for the gate fidelity, but opens the possibility for further exploration of the engineering details of qubit logic gate devices that is hard to be uncovered with experiments due to the time and the expense.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114928624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241675
J. Byun, D. Kang, M. Shin
We present a micromagnetic simulation study of shape deformation and edge roughness effect in the spin orbit torque-magnetic random access memory (SOT-MRAM). The two different write schemes, magnetic field induced SOT write scheme and SOT-spin transfer torque (STT) hybrid write scheme, were studied in the presence of the stray field from the reference layer. We found that for conventional magnetic field induced SOT, shape deformation can cause non-deterministic switching even at a relatively high gilbert damping constant of 0.08. Higher Gilbert damping constant (a) of 0.09 is needed to ensure deterministic switching under the shape deformation effect. The SOT-STT hybrid write scheme showed deterministic switching even at lower damping constant with relatively low device variations due to the constant -z directed torque of the STT. However, with higher damping constant of a 0.1, device variation with the SOT-STT hybrid write scheme increases while the SOT-magnetic field write scheme successfully compensates the most of the variation caused by the edge deformation.
{"title":"Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Access Memory","authors":"J. Byun, D. Kang, M. Shin","doi":"10.23919/SISPAD49475.2020.9241675","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241675","url":null,"abstract":"We present a micromagnetic simulation study of shape deformation and edge roughness effect in the spin orbit torque-magnetic random access memory (SOT-MRAM). The two different write schemes, magnetic field induced SOT write scheme and SOT-spin transfer torque (STT) hybrid write scheme, were studied in the presence of the stray field from the reference layer. We found that for conventional magnetic field induced SOT, shape deformation can cause non-deterministic switching even at a relatively high gilbert damping constant of 0.08. Higher Gilbert damping constant (a) of 0.09 is needed to ensure deterministic switching under the shape deformation effect. The SOT-STT hybrid write scheme showed deterministic switching even at lower damping constant with relatively low device variations due to the constant -z directed torque of the STT. However, with higher damping constant of a 0.1, device variation with the SOT-STT hybrid write scheme increases while the SOT-magnetic field write scheme successfully compensates the most of the variation caused by the edge deformation.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114971564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241593
S. Bhagdikar, S. Mahapatra
A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($Delta mathrm{V}_{mathrm{HT}})$ and capture-emission time constants ($tau_{C}-tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.
{"title":"6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments","authors":"S. Bhagdikar, S. Mahapatra","doi":"10.23919/SISPAD49475.2020.9241593","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241593","url":null,"abstract":"A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($Delta mathrm{V}_{mathrm{HT}})$ and capture-emission time constants ($tau_{C}-tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123611593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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