Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241652
T. Ma
Power electronics are an integral part of our daily life. The applications of power electronics are widespread, supporting multiple industries such as automotive, telecommunication, transportation, utility systems, aerospace, etc. According to a new market research report including the analysis of the COVID-19 impact [1], the global power electronics market is expected to grow at a Compounded Annual Growth Rate (CAGR) of 4.7% from $35.1 billion in 2020 to $44.2 billion by 2025. As depicted in Figure 1, the key drivers of growth are 1) increasing integration of power electronics, and 2) increasing use of wide bandgap (WBG) materials. In terms of regional growth, Asia Pacific (APAC) including China, Japan, South Korea, and India is expected to grow the fastest compared to North America, Europe, and Rest of the World (Figure 2).
{"title":"Future of Power Electronics from TCAD Perspective","authors":"T. Ma","doi":"10.23919/SISPAD49475.2020.9241652","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241652","url":null,"abstract":"Power electronics are an integral part of our daily life. The applications of power electronics are widespread, supporting multiple industries such as automotive, telecommunication, transportation, utility systems, aerospace, etc. According to a new market research report including the analysis of the COVID-19 impact [1], the global power electronics market is expected to grow at a Compounded Annual Growth Rate (CAGR) of 4.7% from $35.1 billion in 2020 to $44.2 billion by 2025. As depicted in Figure 1, the key drivers of growth are 1) increasing integration of power electronics, and 2) increasing use of wide bandgap (WBG) materials. In terms of regional growth, Asia Pacific (APAC) including China, Japan, South Korea, and India is expected to grow the fastest compared to North America, Europe, and Rest of the World (Figure 2).","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117324440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/sispad49475.2020.9241597
{"title":"SISPAD 2020 Cover Page","authors":"","doi":"10.23919/sispad49475.2020.9241597","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241597","url":null,"abstract":"","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131008273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241612
F. Mohiyaddin, G. Simion, N. D. Stuyck, R. Li, A. Elsayed, M. Shehata, S. Kubicek, C. Godfrin, B. Chan, J. Jussot, F. C. ubotaru, S. Brebels, F. M. Bufler, G. Eneman, P. Weckx, P. Matagne, A. Spessot, B. Govoreanu, I. Radu
We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.
{"title":"TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design","authors":"F. Mohiyaddin, G. Simion, N. D. Stuyck, R. Li, A. Elsayed, M. Shehata, S. Kubicek, C. Godfrin, B. Chan, J. Jussot, F. C. ubotaru, S. Brebels, F. M. Bufler, G. Eneman, P. Weckx, P. Matagne, A. Spessot, B. Govoreanu, I. Radu","doi":"10.23919/SISPAD49475.2020.9241612","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241612","url":null,"abstract":"We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"52 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124616984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241594
C. Medina-Bailón, O. Badami, H. Carrillo-Nuñez, T. Dutta, D. Nagy, F. Adamu-Lema, V. Georgiev, A. Asenov
The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space $k cdot p$ approach in combination with the existing NEGF module.
{"title":"Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)","authors":"C. Medina-Bailón, O. Badami, H. Carrillo-Nuñez, T. Dutta, D. Nagy, F. Adamu-Lema, V. Georgiev, A. Asenov","doi":"10.23919/SISPAD49475.2020.9241594","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241594","url":null,"abstract":"The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space $k cdot p$ approach in combination with the existing NEGF module.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241595
L. Schulz, D. Schulz
The analysis of the charge carrier transport within modern device concepts of nanoelectronics and nanophotonics as well as THz technology requires the inclusion of multiband Hamiltonians. These can then be used to consider not only intraband transitions but also interband transitions as well as effects based on the existence and interaction of light and heavy holes. For this purpose appropriate multiband Hamiltonians must be applied for a suitable numerical analysis. On the basis of the quantum Liouville equation, a formalism is derived how multiband Hamiltonians can be integrated into advanced and recently developed Wigner transport based algorithms utilizing a phase space operator and which multiband models are appropriate. The presented formalism is demonstrated by its application onto resonant tunnel diodes that take advantage of interband effects within narrow band gap semiconductor devices.
{"title":"Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices","authors":"L. Schulz, D. Schulz","doi":"10.23919/SISPAD49475.2020.9241595","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241595","url":null,"abstract":"The analysis of the charge carrier transport within modern device concepts of nanoelectronics and nanophotonics as well as THz technology requires the inclusion of multiband Hamiltonians. These can then be used to consider not only intraband transitions but also interband transitions as well as effects based on the existence and interaction of light and heavy holes. For this purpose appropriate multiband Hamiltonians must be applied for a suitable numerical analysis. On the basis of the quantum Liouville equation, a formalism is derived how multiband Hamiltonians can be integrated into advanced and recently developed Wigner transport based algorithms utilizing a phase space operator and which multiband models are appropriate. The presented formalism is demonstrated by its application onto resonant tunnel diodes that take advantage of interband effects within narrow band gap semiconductor devices.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127705291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241606
P. Lapham, O. Badami, C. Medina-Bailón, F. Adamu-Lema, T. Dutta, D. Nagy, V. Georgiev, A. Asenov
In this paper, we combine Density Functional Theory with Kinetic Monte Carlo methodology to study the fundamental transport properties of a type of polyoxometalate (POM) and its behaviour in a potential flash memory device. DFT simulations on POM molecular junctions helps us demonstrate the link between underlying electronic structure of the molecule and its transport properties. Furthermore, we show how various electrode-molecule contact configurations determine the electron transport through the POM. Also, our work reveals that the orientation of the molecule to the electrodes plays a key role in the transport properties of the junction. With Kinetic Monte Carlo we extend this investigation by simulating the retention time of a POM-based flash memory device. Our results show that a POM based flash memory could potentially show multi-bit storage and retain charge for up to 10 years.
{"title":"A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices","authors":"P. Lapham, O. Badami, C. Medina-Bailón, F. Adamu-Lema, T. Dutta, D. Nagy, V. Georgiev, A. Asenov","doi":"10.23919/SISPAD49475.2020.9241606","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241606","url":null,"abstract":"In this paper, we combine Density Functional Theory with Kinetic Monte Carlo methodology to study the fundamental transport properties of a type of polyoxometalate (POM) and its behaviour in a potential flash memory device. DFT simulations on POM molecular junctions helps us demonstrate the link between underlying electronic structure of the molecule and its transport properties. Furthermore, we show how various electrode-molecule contact configurations determine the electron transport through the POM. Also, our work reveals that the orientation of the molecule to the electrodes plays a key role in the transport properties of the junction. With Kinetic Monte Carlo we extend this investigation by simulating the retention time of a POM-based flash memory device. Our results show that a POM based flash memory could potentially show multi-bit storage and retain charge for up to 10 years.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128980323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241637
H. Asai, T. Kuroda, K. Fukuda, J. Hattori, T. Ikegami, N. Mori
We perform TCAD simulation for TMDC channel TFETs with the material parameters considering ab initio band structure. By using the WKB-based nonlocal band-to-band tunneling (BTBT) model with the above parameters, we find that the current voltage characteristics of the TFETs are in good agreement with those obtained by microscopic NEGF calculation. Based on this approach, we also investigate the dependence of tunnel leakage current on the gate length. Our simulation method paves the way for reliable macroscopic device simulations for TMDC channel TFET.
{"title":"TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation","authors":"H. Asai, T. Kuroda, K. Fukuda, J. Hattori, T. Ikegami, N. Mori","doi":"10.23919/SISPAD49475.2020.9241637","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241637","url":null,"abstract":"We perform TCAD simulation for TMDC channel TFETs with the material parameters considering ab initio band structure. By using the WKB-based nonlocal band-to-band tunneling (BTBT) model with the above parameters, we find that the current voltage characteristics of the TFETs are in good agreement with those obtained by microscopic NEGF calculation. Based on this approach, we also investigate the dependence of tunnel leakage current on the gate length. Our simulation method paves the way for reliable macroscopic device simulations for TMDC channel TFET.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129700937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241599
H. Wong
Cryogenic silicon CMOS operating between 77K and 4.2K is becoming more popular in high-speed server applications and the periphery of quantum computers. In the cryogenic regime, dopant incomplete ionization and field enhanced ionization become dominating physical phenomena. Therefore, it is important to use accurate and well-calibrated mobility and incomplete ionization models in cryogenic TCAD simulations. In this paper, we present a Philips Unified Mobility Model (PhuMob) and Altermatt’s incomplete ionization model calibrated between 300K and 20K for boron and arsenic dopants in silicon across 5 orders of magnitude in doping concentration. A novel method is proposed to include field-dependent ionization energy in Altermatt’s model, which results in good convergence even in 3D TCAD simulations at 4K.
{"title":"Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations","authors":"H. Wong","doi":"10.23919/SISPAD49475.2020.9241599","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241599","url":null,"abstract":"Cryogenic silicon CMOS operating between 77K and 4.2K is becoming more popular in high-speed server applications and the periphery of quantum computers. In the cryogenic regime, dopant incomplete ionization and field enhanced ionization become dominating physical phenomena. Therefore, it is important to use accurate and well-calibrated mobility and incomplete ionization models in cryogenic TCAD simulations. In this paper, we present a Philips Unified Mobility Model (PhuMob) and Altermatt’s incomplete ionization model calibrated between 300K and 20K for boron and arsenic dopants in silicon across 5 orders of magnitude in doping concentration. A novel method is proposed to include field-dependent ionization energy in Altermatt’s model, which results in good convergence even in 3D TCAD simulations at 4K.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130843354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/sispad49475.2020.9241589
{"title":"SISPAD 2020 TOC","authors":"","doi":"10.23919/sispad49475.2020.9241589","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241589","url":null,"abstract":"","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126417599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241687
R. Tiwari, N. Choudhury, Tarun Samadder, S. Mukhopadhyay, N. Parihar, S. Mahapatra
Negative and Positive Bias Temperature Instabilities (NBTI, PBTI) respectively in P and N channel High-K Metal Gate (HKMG) MOSFETs are modeled by trap generation (TG) and charge trapping (CT) and validated against measured data. The mechanism of TG (interface) is incorporated into TCAD and is separately validated using independent experiments. BTI kinetics is modeled at different stress bias (VG) and temperature (T). Impacts of Nitrogen (N%) and Equivalent Oxide Thickness (EOT) scaling on the magnitude of BTI and its time, VG and T dependencies are modeled.
{"title":"TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs","authors":"R. Tiwari, N. Choudhury, Tarun Samadder, S. Mukhopadhyay, N. Parihar, S. Mahapatra","doi":"10.23919/SISPAD49475.2020.9241687","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241687","url":null,"abstract":"Negative and Positive Bias Temperature Instabilities (NBTI, PBTI) respectively in P and N channel High-K Metal Gate (HKMG) MOSFETs are modeled by trap generation (TG) and charge trapping (CT) and validated against measured data. The mechanism of TG (interface) is incorporated into TCAD and is separately validated using independent experiments. BTI kinetics is modeled at different stress bias (VG) and temperature (T). Impacts of Nitrogen (N%) and Equivalent Oxide Thickness (EOT) scaling on the magnitude of BTI and its time, VG and T dependencies are modeled.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129262923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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