Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241592
Peter D. Reyntjens, Sabyasachi Tiwari, M. V. D. Put, B. Sorée, W. Vandenberghe
We theoretically investigate the effect of intercalation of third row transition metals (Co, Cr, Fe, Mn, Ti and V) in the layers of WSe2. Using density functional theory (DFT), we investigate the structural stability. We also compute the DFT energies of various magnetic spin configurations. Using these energies, we construct a Heisenberg Hamiltonian and perform a Monte Carlo study on each WSe2 + intercalant system to estimate the Curie or Néel temperature. We find ferromagnetic ground states for Ti and Cr intercalation, with Curie temperatures of 31K and 225K, respectively. In Fe-intercalated WSe2, we predict that antiferromagnetic ordering is present up to 564K. For V intercalation, we find that the system exhibits a double phase transition.
{"title":"Ab-initio Study of Magnetically Intercalated Tungsten Diselenide","authors":"Peter D. Reyntjens, Sabyasachi Tiwari, M. V. D. Put, B. Sorée, W. Vandenberghe","doi":"10.23919/SISPAD49475.2020.9241592","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241592","url":null,"abstract":"We theoretically investigate the effect of intercalation of third row transition metals (Co, Cr, Fe, Mn, Ti and V) in the layers of WSe2. Using density functional theory (DFT), we investigate the structural stability. We also compute the DFT energies of various magnetic spin configurations. Using these energies, we construct a Heisenberg Hamiltonian and perform a Monte Carlo study on each WSe2 + intercalant system to estimate the Curie or Néel temperature. We find ferromagnetic ground states for Ti and Cr intercalation, with Curie temperatures of 31K and 225K, respectively. In Fe-intercalated WSe2, we predict that antiferromagnetic ordering is present up to 564K. For V intercalation, we find that the system exhibits a double phase transition.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132776000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241604
Junsung Park, Minjae Kim, Jae‐Hyung Jang, Sung-Min Hong
The HfO2-based resistive random-access-memory (RRAM) is studied. In the first part, two parameters of oxygen vacancies are extracted. The migration barrier of the oxygen vacancy (or the extended Frenkel pair) is calculated. The resistivity of a filament is also calculated. In the second part, an existing compact model for the RRAM is implemented and its results are compared with the experimental data
{"title":"Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories","authors":"Junsung Park, Minjae Kim, Jae‐Hyung Jang, Sung-Min Hong","doi":"10.23919/SISPAD49475.2020.9241604","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241604","url":null,"abstract":"The HfO2-based resistive random-access-memory (RRAM) is studied. In the first part, two parameters of oxygen vacancies are extracted. The migration barrier of the oxygen vacancy (or the extended Frenkel pair) is calculated. The resistivity of a filament is also calculated. In the second part, an existing compact model for the RRAM is implemented and its results are compared with the experimental data","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"437 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134149863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241590
Junhyeok Kim, Jaehyun Yoo, Jaehyun Jung, Kwangtea Kim, Jae-Soon Bae, Yoon-suk Kim, Ohkyum kwon, U. Kwon, D. Kim
The novel optimization method for BCD(Bipolar-CMOS-DMOS) process development based on Machine Learning(ML) and statistical process modeling considering the entire wafer variation is proposed to improve the device and process competitiveness. The self-align PBODY process is used for high-performance N-type Lateral Diffused Metal Oxide Semiconductor(NLDMOS) in BCD process and it also is related to stability in PMIC operation. The process modeling embracing the performance and the stability of LDMOS is performed with TCAD using inline data. For the development of BCD process, the PBODY process parameters are optimized through the ML algorithms and the condition is verified with TCAD and silicon test. Finally, we can secure new low voltage NLDMOS with the improved performance and stability respectively for without any degradation in the new 0.13μm BCD process.
{"title":"Novel Optimization Method using Machine-learning for Device and Process Competitiveness of BCD Process","authors":"Junhyeok Kim, Jaehyun Yoo, Jaehyun Jung, Kwangtea Kim, Jae-Soon Bae, Yoon-suk Kim, Ohkyum kwon, U. Kwon, D. Kim","doi":"10.23919/SISPAD49475.2020.9241590","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241590","url":null,"abstract":"The novel optimization method for BCD(Bipolar-CMOS-DMOS) process development based on Machine Learning(ML) and statistical process modeling considering the entire wafer variation is proposed to improve the device and process competitiveness. The self-align PBODY process is used for high-performance N-type Lateral Diffused Metal Oxide Semiconductor(NLDMOS) in BCD process and it also is related to stability in PMIC operation. The process modeling embracing the performance and the stability of LDMOS is performed with TCAD using inline data. For the development of BCD process, the PBODY process parameters are optimized through the ML algorithms and the condition is verified with TCAD and silicon test. Finally, we can secure new low voltage NLDMOS with the improved performance and stability respectively for without any degradation in the new 0.13μm BCD process.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132737034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241644
L. Schulz, D. Schulz
The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.
{"title":"Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETs","authors":"L. Schulz, D. Schulz","doi":"10.23919/SISPAD49475.2020.9241644","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241644","url":null,"abstract":"The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115791681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We developed a Monte Carlo simulator to compute the state-dependent I-V characteristics of three-terminal (3T) RRAM devices. State switching in these devices is modeled using a combination of vacancy migration and trap-assisted-tunneling mechanisms. We describe key elements of the simulator, compute hysteresis curves under typical voltage cycling conditions, and demonstrate agreement with experimental results. We then study the response of 2T- and 3T-RRAMs under pulsed operation and show that 3T-RRAM conductance values have both greater dynamic range than 2T-RRAMs and the potential to deliver superior inference accuracy in neuromorphic applications.
{"title":"Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic Computing","authors":"Akhilesh Balasingam, Akash Levy, Haitong Li, Priyanka Raina","doi":"10.23919/SISPAD49475.2020.9241659","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241659","url":null,"abstract":"We developed a Monte Carlo simulator to compute the state-dependent I-V characteristics of three-terminal (3T) RRAM devices. State switching in these devices is modeled using a combination of vacancy migration and trap-assisted-tunneling mechanisms. We describe key elements of the simulator, compute hysteresis curves under typical voltage cycling conditions, and demonstrate agreement with experimental results. We then study the response of 2T- and 3T-RRAMs under pulsed operation and show that 3T-RRAM conductance values have both greater dynamic range than 2T-RRAMs and the potential to deliver superior inference accuracy in neuromorphic applications.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123590991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241602
M. Fukuda, Y. Ishikawa
This paper presents and discusses the modeling and evaluation of plasmonic circuits including plasmonic devices such as a multimode interferometer, mode converter, multiplexer, logic circuits, and signal transmission networks.
{"title":"Simulation and Evaluation of Plasmonic Circuits","authors":"M. Fukuda, Y. Ishikawa","doi":"10.23919/SISPAD49475.2020.9241602","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241602","url":null,"abstract":"This paper presents and discusses the modeling and evaluation of plasmonic circuits including plasmonic devices such as a multimode interferometer, mode converter, multiplexer, logic circuits, and signal transmission networks.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129040762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/sispad49475.2020.9241620
{"title":"SISPAD 2020 Committees","authors":"","doi":"10.23919/sispad49475.2020.9241620","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241620","url":null,"abstract":"","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125104478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241598
Katsuki Abe, K. Oda, M. Tomita, T. Matsuki, T. Matsukawa, Takanobu Watanabe
We compare the thermoelectric (TE) performances between two types of unit cell arrangements of planar unileg TE generators of silicon-nanowire (Si-NW). The planar TE generators are driven by the temperature gradient along the Si-NW. The TE performance highly depends on how the hot and cold sides of the unit cell is oriented with respect to the neighboring cells. If the hot sides of neighboring cells are placed next to each other, TE power is improved compared to the case where the hot and cold side of TE generator is arranged alternately. Optimal conditions of Si-NW length and metal wiring structure are also discussed.
{"title":"4-4 Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires","authors":"Katsuki Abe, K. Oda, M. Tomita, T. Matsuki, T. Matsukawa, Takanobu Watanabe","doi":"10.23919/SISPAD49475.2020.9241598","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241598","url":null,"abstract":"We compare the thermoelectric (TE) performances between two types of unit cell arrangements of planar unileg TE generators of silicon-nanowire (Si-NW). The planar TE generators are driven by the temperature gradient along the Si-NW. The TE performance highly depends on how the hot and cold sides of the unit cell is oriented with respect to the neighboring cells. If the hot sides of neighboring cells are placed next to each other, TE power is improved compared to the case where the hot and cold side of TE generator is arranged alternately. Optimal conditions of Si-NW length and metal wiring structure are also discussed.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124205298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241645
L. Filipovic
Microheaters are frequently applied in the design of semiconductor metal oxide gas sensors in order to heat the sensing layer and induce the surface chemical reactions which promote molecular adsorption. One of the most common materials used for the microheater layer is platinum. In this manuscript, a model for electro-migration is developed and implemented to study vacancy dynamics and the thereby-induced stress in platinum-based microheaters for gas sensor applications. The model is then applied to study the impact of the individual components which contribute to vacancy transport, including electro-migration, thermo-migration, and stress-migration. We find that these structures have very high thermal gradients, making the impact of thermo-migration component higher than the electro-migration component in the early stages of vacancy transport, unlike in copper-based interconnects. Therefore, improving the temperature uniformity of the microheater design should lead to a longer operating time before failure.
{"title":"Electromigration Model for Platinum Hotplates","authors":"L. Filipovic","doi":"10.23919/SISPAD49475.2020.9241645","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241645","url":null,"abstract":"Microheaters are frequently applied in the design of semiconductor metal oxide gas sensors in order to heat the sensing layer and induce the surface chemical reactions which promote molecular adsorption. One of the most common materials used for the microheater layer is platinum. In this manuscript, a model for electro-migration is developed and implemented to study vacancy dynamics and the thereby-induced stress in platinum-based microheaters for gas sensor applications. The model is then applied to study the impact of the individual components which contribute to vacancy transport, including electro-migration, thermo-migration, and stress-migration. We find that these structures have very high thermal gradients, making the impact of thermo-migration component higher than the electro-migration component in the early stages of vacancy transport, unlike in copper-based interconnects. Therefore, improving the temperature uniformity of the microheater design should lead to a longer operating time before failure.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117030182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241615
Alexander Scharinger, P. Manstetten, A. Hössinger, J. Weinbub
A key part of advanced three-dimensional feature scale etching and deposition simulations is calculating the particle flux distributions. The most commonly applied flux calculation approach is top-down Monte Carlo which, however, introduces numerical noise. In principal, this noise can be reduced by increasing the number of simulated particles but doing so also increases the overall running time. For complex geometries, especially high aspect ratio structures, which are very prominent in state of the art three-dimensional electronic device designs, increasing the number of samples is not a viable approach: Only a very small subset of simulated particles contributes to reducing the noise in remote and obscured surface regions. We thus propose an adaptive importance sampling approach based on a generative model to more efficiently focus the sampling on those surface regions with high noise levels. We show that, for a constant number of simulated particles, our approach reduces the noise levels in the calculated flux by about 33% for a representative high aspect ratio test structure.
{"title":"Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD","authors":"Alexander Scharinger, P. Manstetten, A. Hössinger, J. Weinbub","doi":"10.23919/SISPAD49475.2020.9241615","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241615","url":null,"abstract":"A key part of advanced three-dimensional feature scale etching and deposition simulations is calculating the particle flux distributions. The most commonly applied flux calculation approach is top-down Monte Carlo which, however, introduces numerical noise. In principal, this noise can be reduced by increasing the number of simulated particles but doing so also increases the overall running time. For complex geometries, especially high aspect ratio structures, which are very prominent in state of the art three-dimensional electronic device designs, increasing the number of samples is not a viable approach: Only a very small subset of simulated particles contributes to reducing the noise in remote and obscured surface regions. We thus propose an adaptive importance sampling approach based on a generative model to more efficiently focus the sampling on those surface regions with high noise levels. We show that, for a constant number of simulated particles, our approach reduces the noise levels in the calculated flux by about 33% for a representative high aspect ratio test structure.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121460600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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