Pub Date : 2020-09-23DOI: 10.23919/sispad49475.2020.9241671
Tsung-Hsing Yu
The aim of this study is to propose a novel double-heterojunction high electron mobility transistor (DH-HEMT) structure, Al 0.3 Ga 0.7N/GaN/In 0.15 Ga 0.85N/ d-doped, to improve transconductance linearity. A theoretically based quasi-two-dimensional model is well calibrated with experiments and is used to project the transistor performance. It is found that a thin In 0.15 Ga 0.85N back barrier and d-doped layer significantly enhance carrier confinement and increase carrier concentration in the channel. It is the combination effect of enhanced carrier confinement and increased carrier concentration that leads to a larger voltage swing. A wider linear range of transconductance can be achieved on account of the larger voltage swing. Moreover, this novel structure not only improves the transconductance linearity but also increases its maximum transconductance and the corresponding drain current, which is beneficial to high power and high frequency applications.
本研究的目的是提出一种新的双异质结高电子迁移率晶体管(h - hemt)结构，Al 0.3 Ga 0.7N/GaN/In 0.15 Ga 0.85N/ d掺杂，以提高跨导线性度。一个基于理论的准二维模型被实验很好地校准，并用于预测晶体管的性能。发现薄的In 0.15 Ga 0.85N背势垒和d掺杂层显著增强了载流子约束，增加了沟道中的载流子浓度。增强的载流子约束和增加的载流子浓度的联合效应导致了更大的电压摆动。由于较大的电压摆动，可以实现更宽的跨导线性范围。此外，这种新颖的结构不仅提高了跨导线性度，而且增加了最大跨导和相应的漏极电流，有利于大功率和高频应用。
{"title":"Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity","authors":"Tsung-Hsing Yu","doi":"10.23919/sispad49475.2020.9241671","DOIUrl":"https://doi.org/10.23919/sispad49475.2020.9241671","url":null,"abstract":"The aim of this study is to propose a novel double-heterojunction high electron mobility transistor (DH-HEMT) structure, Al 0.3 Ga 0.7N/GaN/In 0.15 Ga 0.85N/ d-doped, to improve transconductance linearity. A theoretically based quasi-two-dimensional model is well calibrated with experiments and is used to project the transistor performance. It is found that a thin In 0.15 Ga 0.85N back barrier and d-doped layer significantly enhance carrier confinement and increase carrier concentration in the channel. It is the combination effect of enhanced carrier confinement and increased carrier concentration that leads to a larger voltage swing. A wider linear range of transconductance can be achieved on account of the larger voltage swing. Moreover, this novel structure not only improves the transconductance linearity but also increases its maximum transconductance and the corresponding drain current, which is beneficial to high power and high frequency applications.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115287652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241657
S. Fiorentini, J. Ender, Mohamed Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov
Spin-transfer torque based devices are among the most promising candidates for emerging nonvolatile memory. Reliable simulation tools can help understand and improve the design of such devices. In this paper, we extend the drift-diffusion approach for coupled spin and charge transport, commonly applied to determine the torque in metallic valves, to the case of magnetic tunnel junctions, which constitute the cell of modern spin-transfer torque memories. We demonstrate that, by introducing a magnetization dependent conductivity and properly choosing the spin diffusion coefficient in the tunnel barrier, the expected behavior of both, the electric current and the spin accumulation, is properly reproduced. The spin torque values’ dependence on the system parameters is investigated. As a unique set of equations is used for the entire memory cell, this constitutes the basis of an efficient finite element based approach to rigorously describe the magnetization dynamics in emerging spin-transfer torque memories.
{"title":"Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling","authors":"S. Fiorentini, J. Ender, Mohamed Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov","doi":"10.23919/SISPAD49475.2020.9241657","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241657","url":null,"abstract":"Spin-transfer torque based devices are among the most promising candidates for emerging nonvolatile memory. Reliable simulation tools can help understand and improve the design of such devices. In this paper, we extend the drift-diffusion approach for coupled spin and charge transport, commonly applied to determine the torque in metallic valves, to the case of magnetic tunnel junctions, which constitute the cell of modern spin-transfer torque memories. We demonstrate that, by introducing a magnetization dependent conductivity and properly choosing the spin diffusion coefficient in the tunnel barrier, the expected behavior of both, the electric current and the spin accumulation, is properly reproduced. The spin torque values’ dependence on the system parameters is investigated. As a unique set of equations is used for the entire memory cell, this constitutes the basis of an efficient finite element based approach to rigorously describe the magnetization dynamics in emerging spin-transfer torque memories.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115508237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241662
J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov
Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.
{"title":"Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells","authors":"J. Ender, Mohamed Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov","doi":"10.23919/SISPAD49475.2020.9241662","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241662","url":null,"abstract":"Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the demagnetizing field can efficiently be calculated in complex memory structures and how this procedure can be further used to simulate spin-transfer torque switching in magnetic tunnel junctions.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"62 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120816802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241647
A. Zaka, T. Herrmann, R. Richter, S. Duenkel, Ruchil Jain
The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and highlights the need for a comprehensive DC/transient simulation approach during Flash cell optimization.
{"title":"TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory","authors":"A. Zaka, T. Herrmann, R. Richter, S. Duenkel, Ruchil Jain","doi":"10.23919/SISPAD49475.2020.9241647","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241647","url":null,"abstract":"The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and highlights the need for a comprehensive DC/transient simulation approach during Flash cell optimization.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121200623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241683
K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani
Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport properties of 2D electron gas is indispensable for designing HEMT devices. Since electron energy becomes high in HEMT channel because of its high electric field, a simulation method which covers the effects of band nonparabolicity, subband, and upper valley is required. By combining the Poisson-Schrodinger solver with the continuous cellular automaton method, a new simulation method is realized which stably obtains the electron distribution function over a wide range including the high-energy tail. It is reported that selfconsistent simulation is realized for the case where electron concentration redistribution by intersubband transitions affects subband energies through the Poisson-Schrodinger method.
{"title":"A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis","authors":"K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani","doi":"10.23919/SISPAD49475.2020.9241683","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241683","url":null,"abstract":"Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport properties of 2D electron gas is indispensable for designing HEMT devices. Since electron energy becomes high in HEMT channel because of its high electric field, a simulation method which covers the effects of band nonparabolicity, subband, and upper valley is required. By combining the Poisson-Schrodinger solver with the continuous cellular automaton method, a new simulation method is realized which stably obtains the electron distribution function over a wide range including the high-energy tail. It is reported that selfconsistent simulation is realized for the case where electron concentration redistribution by intersubband transitions affects subband energies through the Poisson-Schrodinger method.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123462118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241678
X. Klemenschits, S. Selberherr, L. Filipovic
An algorithm is developed, which advects a material interface analytically, according to purely geometric considerations. This algorithm is implemented in ViennaLS, a sparse level set library and its applicability to common microelectronic fabrication processes is demonstrated. A pinch-off plasma CVD process is emulated using the presented algorithm. This algorithm is compared to common advection algorithms, showing a significant improvement in accuracy, with a performance penalty of a factor of about 2 when compared to simple advection schemes and a performance benefit of a factor of 6 when compared to more sophisticated schemes.
{"title":"Geometric Advection Algorithm for Process Emulation","authors":"X. Klemenschits, S. Selberherr, L. Filipovic","doi":"10.23919/SISPAD49475.2020.9241678","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241678","url":null,"abstract":"An algorithm is developed, which advects a material interface analytically, according to purely geometric considerations. This algorithm is implemented in ViennaLS, a sparse level set library and its applicability to common microelectronic fabrication processes is demonstrated. A pinch-off plasma CVD process is emulated using the presented algorithm. This algorithm is compared to common advection algorithms, showing a significant improvement in accuracy, with a performance penalty of a factor of about 2 when compared to simple advection schemes and a performance benefit of a factor of 6 when compared to more sophisticated schemes.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121693138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report an advanced hybrid intelligent methodology for device model parameter extractions combining multiobjective evolutionary algorithms, numerical optimization methods, and unsupervised learning neural networks on a unified optimization framework. The results between experimentally measured data and the calculation from industrial standard compact models are accurate, stable and convergent rapidly for all I-V curves. Verifications from diodes, bipolar transistors, MOSFETs, FinFETs, to nanowire MOSFETs confirm the robustness of the developed prototype, where the extraction is within 5% of accuracy.
{"title":"Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology","authors":"cheng-che liu, Yiming Li, Ya-Shu Yang, Chieh-Yang Chen, Min-Hui Chuang","doi":"10.23919/SISPAD49475.2020.9241613","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241613","url":null,"abstract":"We report an advanced hybrid intelligent methodology for device model parameter extractions combining multiobjective evolutionary algorithms, numerical optimization methods, and unsupervised learning neural networks on a unified optimization framework. The results between experimentally measured data and the calculation from industrial standard compact models are accurate, stable and convergent rapidly for all I-V curves. Verifications from diodes, bipolar transistors, MOSFETs, FinFETs, to nanowire MOSFETs confirm the robustness of the developed prototype, where the extraction is within 5% of accuracy.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131131971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241670
S. Su, Jin Cai, E. Chen, Lain‐Jong Li, H. Philip Wong
Double-gated monolayer two-dimensional (2D) material transistor is expected to offer ideal (~60 mV/dec) subthreshold swing (SS) for gate lengths well below 10 nm. However, the ideal 2D transistor assumes Ohmic contacts whereas a realistic metal/2D Schottky contact can degrade SS. Transport simulations including scattering is necessary to correctly describe carrier thermalization and predict the SS degradation. Scaled 2D transistors with a Schottky barrier height (SBH) smaller than 100 meV and doping concentration in the extension region larger than 2x1013 cm-2 are required to achieve high performance.
{"title":"Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors","authors":"S. Su, Jin Cai, E. Chen, Lain‐Jong Li, H. Philip Wong","doi":"10.23919/SISPAD49475.2020.9241670","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241670","url":null,"abstract":"Double-gated monolayer two-dimensional (2D) material transistor is expected to offer ideal (~60 mV/dec) subthreshold swing (SS) for gate lengths well below 10 nm. However, the ideal 2D transistor assumes Ohmic contacts whereas a realistic metal/2D Schottky contact can degrade SS. Transport simulations including scattering is necessary to correctly describe carrier thermalization and predict the SS degradation. Scaled 2D transistors with a Schottky barrier height (SBH) smaller than 100 meV and doping concentration in the extension region larger than 2x1013 cm-2 are required to achieve high performance.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128093824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241644
L. Schulz, D. Schulz
The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.
{"title":"Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETs","authors":"L. Schulz, D. Schulz","doi":"10.23919/SISPAD49475.2020.9241644","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241644","url":null,"abstract":"The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115791681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241636
M. Miura-Mattausch, H. Kikuchihara, S. Baba, D. Navarro, T. Iizuka, K. Sakamoto, H. Mattausch
Radiation can generate huge amounts of carriers in thin-layer SOI-MOSFETs, which change the device-internal potential distribution, known as an origin for of malfunction of circuits. 2D-numerical device-simulation analysis shows that the radiation-generated electrons initially flow-out from the SOI layer to both source and drain electrodes, which moderates the radiation-effect magnitude on device currents in this beginning stage. Subsequent enhancement of the current flow is due to accumulated holes caused by the potential barrier at source/channel junction. Compact modeling of the carrier movements during the initial radiation stage and of the hole-accumulation dynamics is based on the dynamically generated carrier densities. The developed compact model has been implemented into SPICE and model evaluation has been done by comparison to 2D-numerical device-simulation results. Under the off-state, it is shown that circuits can be easily switched to operation condition. Under the on-state, it is demonstrated that circuits can easily malfunction by operating differently from the designed circuit function. Though the radiation itself happens only for a short time, the radiation-induced effects continue for a rather time long, which causes serious effects in the circuits and is explained by the capacitor features of the SOI-MOSFET
{"title":"Compact Modeling of Radiation Effects in Thin-Layer SOI-MOSFETs","authors":"M. Miura-Mattausch, H. Kikuchihara, S. Baba, D. Navarro, T. Iizuka, K. Sakamoto, H. Mattausch","doi":"10.23919/SISPAD49475.2020.9241636","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241636","url":null,"abstract":"Radiation can generate huge amounts of carriers in thin-layer SOI-MOSFETs, which change the device-internal potential distribution, known as an origin for of malfunction of circuits. 2D-numerical device-simulation analysis shows that the radiation-generated electrons initially flow-out from the SOI layer to both source and drain electrodes, which moderates the radiation-effect magnitude on device currents in this beginning stage. Subsequent enhancement of the current flow is due to accumulated holes caused by the potential barrier at source/channel junction. Compact modeling of the carrier movements during the initial radiation stage and of the hole-accumulation dynamics is based on the dynamically generated carrier densities. The developed compact model has been implemented into SPICE and model evaluation has been done by comparison to 2D-numerical device-simulation results. Under the off-state, it is shown that circuits can be easily switched to operation condition. Under the on-state, it is demonstrated that circuits can easily malfunction by operating differently from the designed circuit function. Though the radiation itself happens only for a short time, the radiation-induced effects continue for a rather time long, which causes serious effects in the circuits and is explained by the capacitor features of the SOI-MOSFET","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117340488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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