Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773634
O. Kreinin, G. Bahir
Rapid thermal MOCVD process has been used to study the selective growth of InP on [001] InP substrate using an ion implanted mask-less definition for the selective epitaxy. The selectivity of InP growth on the un-implanted area is controlled by the TMIn partial pressure and can reach complete growth inhibition on the implanted area. We used the combined nature of the rapid thermal MOCVD system to demonstrate two additional steps: (a) in situ annealing of the ion implanted damaged area and (b) re-growth of Fe:InP layers on the primary "masked surface", to produce a buried layer in a single growth sequence. High lateral resolution and high quality un-doped and Fe doped semi-insulated InP layers are demonstrated.
{"title":"Single step growth of buried InP layer using selective rapid thermal MOCVD","authors":"O. Kreinin, G. Bahir","doi":"10.1109/ICIPRM.1999.773634","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773634","url":null,"abstract":"Rapid thermal MOCVD process has been used to study the selective growth of InP on [001] InP substrate using an ion implanted mask-less definition for the selective epitaxy. The selectivity of InP growth on the un-implanted area is controlled by the TMIn partial pressure and can reach complete growth inhibition on the implanted area. We used the combined nature of the rapid thermal MOCVD system to demonstrate two additional steps: (a) in situ annealing of the ion implanted damaged area and (b) re-growth of Fe:InP layers on the primary \"masked surface\", to produce a buried layer in a single growth sequence. High lateral resolution and high quality un-doped and Fe doped semi-insulated InP layers are demonstrated.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124576277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773768
D. Trommer, R. Steingruber, R. Loffler, A. Umbach
Spot size converters (waveguide tapers) are key elements for photonic integrated circuits (PICs) since they significantly reduce the effort and cost of the device packaging. In comparison to other technologies like micro lenses or lensed fibres the implementation of spot size converters can also reduce the optical insertion loss of the devices. The basic technological challenge is the fabrication of a vertical ramp with a maximum height of around 1 /spl mu/m and a length of 500-1000 /spl mu/m. Several approaches to form this ramp have been reported including shadow mask etching, shadow mask epitaxy and selective area growth. All this methods have in common that they require special processes which are rather complicated, expensive and inflexible in terms of tailoring of the ramp profile. In this paper, we present a novel method for the fabrication of spot size converters which can produce almost arbitrary taper profiles and requires only standard lithography and etching processes and can therefore easily be implemented into standard waveguide processes.
{"title":"A novel flexible, reliable and easy to use technique for the fabrication of optical spot size converters for InP based PICs","authors":"D. Trommer, R. Steingruber, R. Loffler, A. Umbach","doi":"10.1109/ICIPRM.1999.773768","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773768","url":null,"abstract":"Spot size converters (waveguide tapers) are key elements for photonic integrated circuits (PICs) since they significantly reduce the effort and cost of the device packaging. In comparison to other technologies like micro lenses or lensed fibres the implementation of spot size converters can also reduce the optical insertion loss of the devices. The basic technological challenge is the fabrication of a vertical ramp with a maximum height of around 1 /spl mu/m and a length of 500-1000 /spl mu/m. Several approaches to form this ramp have been reported including shadow mask etching, shadow mask epitaxy and selective area growth. All this methods have in common that they require special processes which are rather complicated, expensive and inflexible in terms of tailoring of the ramp profile. In this paper, we present a novel method for the fabrication of spot size converters which can produce almost arbitrary taper profiles and requires only standard lithography and etching processes and can therefore easily be implemented into standard waveguide processes.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130331024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773667
M. Sokolich, C. Fields, G. Raghavan, D. Hitko, M. Lui, D.P. Docter, Y. Brown, M. Case, A. Kramer, J.A. Henige, J. Jensen
Using experimental data and a sum of weighted RC time constant model we optimized AlInAs/GaInAs SHBT devices for minimum gate delay in a static divider. The best result obtained, a 55 GHz maximum clock rate, is to our knowledge the highest toggle rate reported to date. Comparable structures without critical base resistance optimization toggled at no more than 44 GHz. f/sub t/ and f/sub max/ were observed to be only weak indicators of divider performance. The calculated maximum toggle rates obtained from the weighted RC time constant method agree reasonably well with experiment. The experiments and analysis lead to the conclusion that the dominant parasitic component in this regime of ultra-high speed HBT is the base resistance.
{"title":"Optimizing InP HBT technology for 50 GHz clock-rate MSI circuits","authors":"M. Sokolich, C. Fields, G. Raghavan, D. Hitko, M. Lui, D.P. Docter, Y. Brown, M. Case, A. Kramer, J.A. Henige, J. Jensen","doi":"10.1109/ICIPRM.1999.773667","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773667","url":null,"abstract":"Using experimental data and a sum of weighted RC time constant model we optimized AlInAs/GaInAs SHBT devices for minimum gate delay in a static divider. The best result obtained, a 55 GHz maximum clock rate, is to our knowledge the highest toggle rate reported to date. Comparable structures without critical base resistance optimization toggled at no more than 44 GHz. f/sub t/ and f/sub max/ were observed to be only weak indicators of divider performance. The calculated maximum toggle rates obtained from the weighted RC time constant method agree reasonably well with experiment. The experiments and analysis lead to the conclusion that the dominant parasitic component in this regime of ultra-high speed HBT is the base resistance.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114201470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773718
F. Pommereau, R. Mestric, B. Martin, E. Rao, F. Gaborit, D. Leclerc, C. Porcheron, M. Renaud
Butt coupling between deep ridge and buried ridge waveguides has been optimised in terms of morphology and transition tilt angles. Low reflectivities have been found for 15 to 30 degrees tilt angles, allowing the fabrication of a four channel wavelength selector. Loss-less operation has been demonstrated for each channel.
{"title":"Optimisation of butt coupling between deep-ridge and buried ridge waveguides for the realisation of monolithically integrated wavelength selectors","authors":"F. Pommereau, R. Mestric, B. Martin, E. Rao, F. Gaborit, D. Leclerc, C. Porcheron, M. Renaud","doi":"10.1109/ICIPRM.1999.773718","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773718","url":null,"abstract":"Butt coupling between deep ridge and buried ridge waveguides has been optimised in terms of morphology and transition tilt angles. Low reflectivities have been found for 15 to 30 degrees tilt angles, allowing the fabrication of a four channel wavelength selector. Loss-less operation has been demonstrated for each channel.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114866316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773752
K. Kudo, T. Nakazaki, M. Yamaguchi
We developed a novel technique, called microarray selective epitaxy (MASE), for selectively growing extremely small PICs. MASE can form densely arrayed (pitch<10 /spl mu/m) multiple-quantum-well (MQW) waveguides, without the need for semiconductor etching, and simultaneously control the bandgap-wavelength of each MQW in the over-300-nm wavelength range.
{"title":"Microarray selective epitaxy (MASE) for integrated photonic devices","authors":"K. Kudo, T. Nakazaki, M. Yamaguchi","doi":"10.1109/ICIPRM.1999.773752","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773752","url":null,"abstract":"We developed a novel technique, called microarray selective epitaxy (MASE), for selectively growing extremely small PICs. MASE can form densely arrayed (pitch<10 /spl mu/m) multiple-quantum-well (MQW) waveguides, without the need for semiconductor etching, and simultaneously control the bandgap-wavelength of each MQW in the over-300-nm wavelength range.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"122 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124524478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773739
A. Souifi, B. Georgescu, G. Brémond, M. Py, J. Decobert, G. Post, G. Guillot
The aim of this work is to show how some parasitic phenomena such as kink effect or low frequency noise often observed in the characteristics of AlInAs/GaInAs/InP composite channel HFETs can be correlated with deep levels. HFETs have been characterized using deep level transient spectroscopy (DLTS), current transient spectroscopy (CTS), drain lag (DL), and low frequency noise (LFN) measurements. Output characteristics of the devices have also been recorded under monochromatic optical excitation in order to study the optical properties of the defects. The main trap is related to the AlInAs layers and identified as E3. It is shown that E3 is responsible for a strong generation-recombination noise at room temperature. This trap also contributes to a strong output conductance variation.
{"title":"Influence of deep levels in AlInAs/GalnAs/InP HFETs","authors":"A. Souifi, B. Georgescu, G. Brémond, M. Py, J. Decobert, G. Post, G. Guillot","doi":"10.1109/ICIPRM.1999.773739","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773739","url":null,"abstract":"The aim of this work is to show how some parasitic phenomena such as kink effect or low frequency noise often observed in the characteristics of AlInAs/GaInAs/InP composite channel HFETs can be correlated with deep levels. HFETs have been characterized using deep level transient spectroscopy (DLTS), current transient spectroscopy (CTS), drain lag (DL), and low frequency noise (LFN) measurements. Output characteristics of the devices have also been recorded under monochromatic optical excitation in order to study the optical properties of the defects. The main trap is related to the AlInAs layers and identified as E3. It is shown that E3 is responsible for a strong generation-recombination noise at room temperature. This trap also contributes to a strong output conductance variation.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125449997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773657
S. Gondet, T. Duffar, G. Jacob, N. Van den Bogaert, F. Louchet
A Haasen-Sumino model is applied to the generation of the dislocations in InP crystals grown by a modified LEC process. The thermal conditions in the crystal come from a dynamic numerical simulation of the global heat transfer in the furnace. To take into account the behaviour at temperature close to the melting point, a dislocation annihilation model is added and the dislocation density is resolved on each glide system. The computed dislocation densities are in good agreement with the measured values and this method allows a better knowledge on the dislocation multiplication and the optimisation of growth parameters in order to decrease the dislocation density in 3-in iron doped wafer.
{"title":"Modelling of dislocation generation in InP crystal growth","authors":"S. Gondet, T. Duffar, G. Jacob, N. Van den Bogaert, F. Louchet","doi":"10.1109/ICIPRM.1999.773657","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773657","url":null,"abstract":"A Haasen-Sumino model is applied to the generation of the dislocations in InP crystals grown by a modified LEC process. The thermal conditions in the crystal come from a dynamic numerical simulation of the global heat transfer in the furnace. To take into account the behaviour at temperature close to the melting point, a dislocation annihilation model is added and the dislocation density is resolved on each glide system. The computed dislocation densities are in good agreement with the measured values and this method allows a better knowledge on the dislocation multiplication and the optimisation of growth parameters in order to decrease the dislocation density in 3-in iron doped wafer.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134430666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773711
J. Etrillard, S. Blayac, M. Riet
We report on an inductively coupled plasma (ICP) process using CH/sub 4//H/sub 2//O/sub 2/ chemistry which have been studied for a self-aligned HBT technology. A very low bias voltage is used to reduce the induced damages. The study has concerned the ion flux characteristics: ion current and ion energy. Surface morphology, pattern profile, etch rates and induced damages were investigated as functions of ion energy and density for an optimized ICP reactor configuration. A comparison is made with an ICP process using a SiCl/sub 4/ chemistry. Finally, a selective process allowing one to attempt an almost full dry etching self-aligned process for HBT applications is described.
{"title":"A selective low induced damage ICP dry etching process for a self-aligned InP-InGaAs HBT technology","authors":"J. Etrillard, S. Blayac, M. Riet","doi":"10.1109/ICIPRM.1999.773711","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773711","url":null,"abstract":"We report on an inductively coupled plasma (ICP) process using CH/sub 4//H/sub 2//O/sub 2/ chemistry which have been studied for a self-aligned HBT technology. A very low bias voltage is used to reduce the induced damages. The study has concerned the ion flux characteristics: ion current and ion energy. Surface morphology, pattern profile, etch rates and induced damages were investigated as functions of ion energy and density for an optimized ICP reactor configuration. A comparison is made with an ICP process using a SiCl/sub 4/ chemistry. Finally, a selective process allowing one to attempt an almost full dry etching self-aligned process for HBT applications is described.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133188986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773755
D. Keiper, U. Eriksson, R. Westphalen, G. Landgren
Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.
{"title":"New MOVPE process for InP based HBT's using CBr/sub 4/, TBA and TBP in N/sub 2/ ambient","authors":"D. Keiper, U. Eriksson, R. Westphalen, G. Landgren","doi":"10.1109/ICIPRM.1999.773755","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773755","url":null,"abstract":"Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125768172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773643
A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz
We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.
{"title":"InAs(P,Sb)/InAsSb LEDs emitting in the 3-4 /spl mu/m range at room temperature","authors":"A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz","doi":"10.1109/ICIPRM.1999.773643","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773643","url":null,"abstract":"We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126149982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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