Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773767
M. M. Raj, J. Wiedmann, Y. Saka, H. Yasumoto, S. Arai
Lasers having a DBR facet on one side of the cavity were fabricated in a simple process using one step electron beam (EB) lithography and CH/sub 4//H/sub 2/-reactive ion etching (RIE). The DBR structure consists of deeply etched 3/spl lambda//4 wide grooves, which are buried with benzocyclobutene (BCB) polymer so as to reduce diffraction loss, spaced 3h/4 apart. The reflectivity of the DBR was estimated from the threshold current dependence on cavity length and an output power ratio from the front to the rear facets to be as high as 96% for 10 element DBR.
{"title":"High reflectivity laser facets by deeply etched DBR buried with benzocyclobutene","authors":"M. M. Raj, J. Wiedmann, Y. Saka, H. Yasumoto, S. Arai","doi":"10.1109/ICIPRM.1999.773767","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773767","url":null,"abstract":"Lasers having a DBR facet on one side of the cavity were fabricated in a simple process using one step electron beam (EB) lithography and CH/sub 4//H/sub 2/-reactive ion etching (RIE). The DBR structure consists of deeply etched 3/spl lambda//4 wide grooves, which are buried with benzocyclobutene (BCB) polymer so as to reduce diffraction loss, spaced 3h/4 apart. The reflectivity of the DBR was estimated from the threshold current dependence on cavity length and an output power ratio from the front to the rear facets to be as high as 96% for 10 element DBR.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125057932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773663
N. Matine, M. Dvorak, X.G. Xu, S. Watkins, C. Bolognesi
In this work, we report on the DC and microwave performance of MOCVD-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs) with various collector thicknesses. The cut-off frequencies (and breakdown voltages) are 106 GHz (8 V), 82 GHz (10 V) and 40 GHz (15 V) for the 2000 /spl Aring/, 3000 /spl Aring/ and 5000 /spl Aring/, lightly doped collectors. The 106 GHz, which is the best f/sub T/ ever reported in this material system, is obtained while maintaining a relatively high breakdown voltage (BV/sub CEO/=8 V). The lower cut-off frequencies obtained for the 3000 /spl Aring/ and 5000 /spl Aring/, collectors are attributed to the longer transit time in the collector and also to the Kirk like limitation brought about by high current densities in the thicker collectors.
{"title":"InP/GaAsSb/InP double heterojunction bipolar transistors with high cut-off frequencies and breakdown voltages","authors":"N. Matine, M. Dvorak, X.G. Xu, S. Watkins, C. Bolognesi","doi":"10.1109/ICIPRM.1999.773663","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773663","url":null,"abstract":"In this work, we report on the DC and microwave performance of MOCVD-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs) with various collector thicknesses. The cut-off frequencies (and breakdown voltages) are 106 GHz (8 V), 82 GHz (10 V) and 40 GHz (15 V) for the 2000 /spl Aring/, 3000 /spl Aring/ and 5000 /spl Aring/, lightly doped collectors. The 106 GHz, which is the best f/sub T/ ever reported in this material system, is obtained while maintaining a relatively high breakdown voltage (BV/sub CEO/=8 V). The lower cut-off frequencies obtained for the 3000 /spl Aring/ and 5000 /spl Aring/, collectors are attributed to the longer transit time in the collector and also to the Kirk like limitation brought about by high current densities in the thicker collectors.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128393077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773726
R. Driad, W. Mckinnon, S. Mcalister, A. Renaud, T. Garanzotis, A. Springthorpe
We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (/spl Delta/V/sub CE0/) of 0.25 V with a saturation voltage (V/sub SAT/) of 0.6 V and a dc current gain of 25 for a base doping level of 7/spl times/10/sup 19/ cm/sup -3/.
{"title":"InAlAs/InP/InGaAs/InP DHBTs with a novel composite-emitter design","authors":"R. Driad, W. Mckinnon, S. Mcalister, A. Renaud, T. Garanzotis, A. Springthorpe","doi":"10.1109/ICIPRM.1999.773726","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773726","url":null,"abstract":"We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (/spl Delta/V/sub CE0/) of 0.25 V with a saturation voltage (V/sub SAT/) of 0.6 V and a dc current gain of 25 for a base doping level of 7/spl times/10/sup 19/ cm/sup -3/.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128536113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773619
O. Wada
Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described,.
{"title":"Indium phosphide-based femtosecond devices for ultrahigh throughput communications and signal-processing systems","authors":"O. Wada","doi":"10.1109/ICIPRM.1999.773619","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773619","url":null,"abstract":"Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described,.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128237947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773699
H. Duran, L. Ren, M. Py, O. Homan, U. Lott, W. Bachtold
In this paper, a technology for the fabrication of high performance InP-based HEMTs using dry gate recess etching is reported. The dry etched devices show better uniformity and considerably reduced low-frequency noise compared to conventionally wet etched ones. As an application of the technology, a dielectric resonator oscillator (DRO) operating in the frequency range of 23.2-24.8 GHz was designed and fabricated using dry or wet etched InGaAs-InAlAs-InP HEMTs. An output power of 12 dBm and a phase noise of -107 dBc/Hz at 100 kHz offset from the carrier were measured for DROs with dry etched HEMTs. These values were superior by nearly 10 dB to those obtained with conventionally wet etched devices. The reduction in phase noise is attributed to hydrogen trap passivation during dry gate recess etching with a methane/hydrogen plasma.
{"title":"High performance InP-based HEMTs with dry etched gate recess for the fabrication of low-noise microwave oscillators","authors":"H. Duran, L. Ren, M. Py, O. Homan, U. Lott, W. Bachtold","doi":"10.1109/ICIPRM.1999.773699","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773699","url":null,"abstract":"In this paper, a technology for the fabrication of high performance InP-based HEMTs using dry gate recess etching is reported. The dry etched devices show better uniformity and considerably reduced low-frequency noise compared to conventionally wet etched ones. As an application of the technology, a dielectric resonator oscillator (DRO) operating in the frequency range of 23.2-24.8 GHz was designed and fabricated using dry or wet etched InGaAs-InAlAs-InP HEMTs. An output power of 12 dBm and a phase noise of -107 dBc/Hz at 100 kHz offset from the carrier were measured for DROs with dry etched HEMTs. These values were superior by nearly 10 dB to those obtained with conventionally wet etched devices. The reduction in phase noise is attributed to hydrogen trap passivation during dry gate recess etching with a methane/hydrogen plasma.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129377332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773740
B. Molnar
The diffusion of ion implanted Be was studied by comparing the implanted profiles with their annealed profiles. The Be diffusion had been investigated in semi-insulating InP and in n- and p-type InP. The medium and high doses Be implants after a few seconds of activation anneal displayed fully developed redistribution. The redistribution is dependent on the background doping level. There is no redistribution during any type of anneal in highly n-type substrates, but as the Fermi-level is shifted towards the valence band by changing the background doping, the Be redistributes by developing a "tail". The implantation damage induced transient enhanced interstitial Be diffusion is assumed to be responsible for the redistribution.
{"title":"Fermi-level dependence of implanted Be diffusion in InP","authors":"B. Molnar","doi":"10.1109/ICIPRM.1999.773740","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773740","url":null,"abstract":"The diffusion of ion implanted Be was studied by comparing the implanted profiles with their annealed profiles. The Be diffusion had been investigated in semi-insulating InP and in n- and p-type InP. The medium and high doses Be implants after a few seconds of activation anneal displayed fully developed redistribution. The redistribution is dependent on the background doping level. There is no redistribution during any type of anneal in highly n-type substrates, but as the Fermi-level is shifted towards the valence band by changing the background doping, the Be redistributes by developing a \"tail\". The implantation damage induced transient enhanced interstitial Be diffusion is assumed to be responsible for the redistribution.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129128942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773632
M. Ravetz, L. Smith, S. Rushworth, A. B. Leese, R. Kanjolia, J. I. Davies, R. Blunt
Solid trimethylindium (TMI) is the precursor of choice for the vast majority of MOVPE applications. However consistent pick up has been a problem under normal operating conditions. Epichem's solutions to this problem have included solution TMI/sup TM/ (TMI suspended in a high boiling point amine adducted to TMI) and dual reverse flow bubblers of solid TMI. A detailed investigation of solution TMI/sup TM/ is being continued at Epichem in order to understand the chemical and physical properties of this indium source. Results have proved solution TMI to have a more consistent 'pick up' than any alternative method and it has been identified as the best precursor for low oxygen applications.
{"title":"Properties of solution TMI/sup TM/ as an OMVPE source","authors":"M. Ravetz, L. Smith, S. Rushworth, A. B. Leese, R. Kanjolia, J. I. Davies, R. Blunt","doi":"10.1109/ICIPRM.1999.773632","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773632","url":null,"abstract":"Solid trimethylindium (TMI) is the precursor of choice for the vast majority of MOVPE applications. However consistent pick up has been a problem under normal operating conditions. Epichem's solutions to this problem have included solution TMI/sup TM/ (TMI suspended in a high boiling point amine adducted to TMI) and dual reverse flow bubblers of solid TMI. A detailed investigation of solution TMI/sup TM/ is being continued at Epichem in order to understand the chemical and physical properties of this indium source. Results have proved solution TMI to have a more consistent 'pick up' than any alternative method and it has been identified as the best precursor for low oxygen applications.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130705217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773661
M. Rodwell, Q. Lee, D. Mensa, J. Guthrie, Y. Betser, S. Martin, R.P. Smith, S. Jaganathan, T. Mathew, P. Krishnan, C. Serhan, S. Long
Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with 0.4 /spl mu/m emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 820 GHz, the highest yet reported for a transistor. The process provides microstrip interconnects on a low-/spl epsiv//sub /spl tau// polymer dielectric with a electroplated copper ground plane and substrate. Substrate thermal resistance is reduced 5:1 over InP. Important wiring parasitics, including wiring capacitance, ground via inductance, and IC-package ground-return inductance, are substantially reduced. Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, master-slave flip-flops operable at over 48 GHz, and 50 GHz AGC/limiting amplifiers. Current efforts include further improvement in bandwidth, development of power devices, and demonstration of more complex mixed-signal ICs.
{"title":"Transferred-substrate heterojunction bipolar transistor integrated circuit technology","authors":"M. Rodwell, Q. Lee, D. Mensa, J. Guthrie, Y. Betser, S. Martin, R.P. Smith, S. Jaganathan, T. Mathew, P. Krishnan, C. Serhan, S. Long","doi":"10.1109/ICIPRM.1999.773661","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773661","url":null,"abstract":"Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with 0.4 /spl mu/m emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 820 GHz, the highest yet reported for a transistor. The process provides microstrip interconnects on a low-/spl epsiv//sub /spl tau// polymer dielectric with a electroplated copper ground plane and substrate. Substrate thermal resistance is reduced 5:1 over InP. Important wiring parasitics, including wiring capacitance, ground via inductance, and IC-package ground-return inductance, are substantially reduced. Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, master-slave flip-flops operable at over 48 GHz, and 50 GHz AGC/limiting amplifiers. Current efforts include further improvement in bandwidth, development of power devices, and demonstration of more complex mixed-signal ICs.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"26 17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130249014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773748
A. Bernussi, W. Carvalho, M. Furtado, A. Gobbi, M. Cotta
Strained In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y//InP single quantum wells grown by low-pressure metal-organic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.
{"title":"Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy","authors":"A. Bernussi, W. Carvalho, M. Furtado, A. Gobbi, M. Cotta","doi":"10.1109/ICIPRM.1999.773748","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773748","url":null,"abstract":"Strained In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y//InP single quantum wells grown by low-pressure metal-organic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131333083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773684
R. Fornari, T. Gorog, J. Jiménez, E. de la Puente, I. Grant, M. Brozel, M. Nicholls
A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterisation showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 10/sup 8/ /spl Omega/ cm and mobilities in the range 3000-4000 cm/sup 2//Vs. PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace.
{"title":"Uniformity of Fe-diffused semi-insulating InP wafers","authors":"R. Fornari, T. Gorog, J. Jiménez, E. de la Puente, I. Grant, M. Brozel, M. Nicholls","doi":"10.1109/ICIPRM.1999.773684","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773684","url":null,"abstract":"A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterisation showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 10/sup 8/ /spl Omega/ cm and mobilities in the range 3000-4000 cm/sup 2//Vs. PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128801821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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