Pub Date : 2023-12-01Epub Date: 2023-07-10DOI: 10.1007/s12070-023-04061-0
Utkal Priyadarshi Mishra, Ashish Kumar Verma, Jai Kumar Chaurasia
Solitary extramedullary plasmacytoma (SEP) of the nasal cavity is a rare neoplastic condition characterized by the localized proliferation of abnormal plasma cells. We present a case of SEP involving the nasal cavity in a 40-year-old male patient who presented with nasal obstruction and recurrent epistaxis. The diagnosis was confirmed through clinical evaluation, imaging studies, and histopathological examination of excised specimen. The patient underwent trans-nasal endoscopic excision of nasal mass without any adjuvant therapy, which resulted in successful local control. This case report highlights the clinical presentation, diagnostic approach, treatment modalities, and favourable prognosis associated with solitary extramedullary plasmacytoma of the nasal cavity.
{"title":"Solitary Extramedullary Plasmacytoma of Nasal Cavity.","authors":"Utkal Priyadarshi Mishra, Ashish Kumar Verma, Jai Kumar Chaurasia","doi":"10.1007/s12070-023-04061-0","DOIUrl":"10.1007/s12070-023-04061-0","url":null,"abstract":"<p><p>Solitary extramedullary plasmacytoma (SEP) of the nasal cavity is a rare neoplastic condition characterized by the localized proliferation of abnormal plasma cells. We present a case of SEP involving the nasal cavity in a 40-year-old male patient who presented with nasal obstruction and recurrent epistaxis. The diagnosis was confirmed through clinical evaluation, imaging studies, and histopathological examination of excised specimen. The patient underwent trans-nasal endoscopic excision of nasal mass without any adjuvant therapy, which resulted in successful local control. This case report highlights the clinical presentation, diagnostic approach, treatment modalities, and favourable prognosis associated with solitary extramedullary plasmacytoma of the nasal cavity.</p>","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"3 1","pages":"4060-4065"},"PeriodicalIF":1.9,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10645697/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82752732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The α-In2Se3 material is a two-dimensional ferroelectric semiconductor whose structural asymmetry gives it spontaneous polarization properties, and exhibits a direct bandgap structure when it is multilayered. α-In2Se3 is an n-type semiconductor, which is usually used in experiments to form heterojunctions with p-type semiconductors to prepare photodetectors. In this paper, we designed α-In2Se3/Nb-doped MoS2 heterojunction, because Nb doping is a good p-type dopant for MoS2. Our research shows that: the heterojunction exhibits type-Ⅱ band alignment; the band offset can be changed by the out-of-plane polarization direction; doping can modulate the Fermi energy level position of MoS2 and thus further modulate the band alignment and band offset. The α-In2Se3/Nb-doped MoS2 heterojunction is expected to be applied to the field of photodetectors, and we proposed a method to adjust the band alignment of the heterojunction by adjusting the doping concentrations.
α-In2Se3材料是一种二维铁电半导体，其结构的不对称性使其具有自发极化特性，在多层结构时表现出直接带隙结构。α-In2Se3是一种n型半导体，在实验中通常用于与p型半导体形成异质结来制备光电探测器。在本文中，我们设计了 α-In2Se3/Nb 掺杂 MoS2 异质结，因为 Nb 掺杂是 MoS2 的良好 p 型掺杂剂。我们的研究表明：异质结表现出Ⅱ型带排列；带偏移可以通过面外极化方向改变；掺杂可以调节 MoS2 的费米能级位置，从而进一步调节带排列和带偏移。α-In2Se3/Nb掺杂MoS2异质结有望应用于光电探测器领域，我们提出了一种通过调整掺杂浓度来调整异质结带对准的方法。
{"title":"α-In2Se3/Nb-doped MoSh2 heterojunction: a first-principles study","authors":"Xiurui Lv, Guipeng Liu, Bangyao Mao, Heyuan Huang, Guijuan Zhao, Jianhong Yang","doi":"10.1088/1361-6641/ad0dac","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0dac","url":null,"abstract":"The <italic toggle=\"yes\">α</italic>-In<sub>2</sub>Se<sub>3</sub> material is a two-dimensional ferroelectric semiconductor whose structural asymmetry gives it spontaneous polarization properties, and exhibits a direct bandgap structure when it is multilayered. <italic toggle=\"yes\">α</italic>-In<sub>2</sub>Se<sub>3</sub> is an n-type semiconductor, which is usually used in experiments to form heterojunctions with p-type semiconductors to prepare photodetectors. In this paper, we designed <italic toggle=\"yes\">α</italic>-In<sub>2</sub>Se<sub>3</sub>/Nb-doped MoS<sub>2</sub> heterojunction, because Nb doping is a good p-type dopant for MoS<sub>2</sub>. Our research shows that: the heterojunction exhibits type-Ⅱ band alignment; the band offset can be changed by the out-of-plane polarization direction; doping can modulate the Fermi energy level position of MoS<sub>2</sub> and thus further modulate the band alignment and band offset. The <italic toggle=\"yes\">α</italic>-In<sub>2</sub>Se<sub>3</sub>/Nb-doped MoS<sub>2</sub> heterojunction is expected to be applied to the field of photodetectors, and we proposed a method to adjust the band alignment of the heterojunction by adjusting the doping concentrations.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"125 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-21DOI: 10.1088/1361-6641/ad0b88
Jeong-Hwan Park, Markus Pristovsek, Cai Wentao, Takeru Kumabe, Soo-Young Choi, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano
In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (µLEDs). A longer periphery resulted in a higher light extraction efficiency (ηe) via the sidewall regardless of the area of the µLEDs. However, as the injection current increased a somewhat larger efficiency droop was observed at the longer periphery due to current crowding. Additionally, larger µLEDs experienced more self-heating than smaller ones, resulting in a red shift of wavelengths and a larger efficiency droop. When the current density exceeded 100 A cm−2, the EQE ratio of smaller-area μLEDs to larger-area ones increased significantly due to the difference in efficiency droop. Besides, a short light propagation length and a long emission width yielded a higher ηe. Hence, the periphery, width, length and area of the µLEDs determine EQE, which provides insight into the pixel design of µLED displays.
{"title":"Droop and light extraction of InGaN-based red micro-light-emitting diodes","authors":"Jeong-Hwan Park, Markus Pristovsek, Cai Wentao, Takeru Kumabe, Soo-Young Choi, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano","doi":"10.1088/1361-6641/ad0b88","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0b88","url":null,"abstract":"In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (<italic toggle=\"yes\">µ</italic>LEDs). A longer periphery resulted in a higher light extraction efficiency (<inline-formula>\u0000<tex-math><?CDATA ${eta _{text{e}}}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>η</mml:mi><mml:mrow><mml:mtext>e</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"sstad0b88ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>) via the sidewall regardless of the area of the <italic toggle=\"yes\">µ</italic>LEDs. However, as the injection current increased a somewhat larger efficiency droop was observed at the longer periphery due to current crowding. Additionally, larger <italic toggle=\"yes\">µ</italic>LEDs experienced more self-heating than smaller ones, resulting in a red shift of wavelengths and a larger efficiency droop. When the current density exceeded 100 A cm<sup>−2</sup>, the EQE ratio of smaller-area <italic toggle=\"yes\">μ</italic>LEDs to larger-area ones increased significantly due to the difference in efficiency droop. Besides, a short light propagation length and a long emission width yielded a higher <inline-formula>\u0000<tex-math><?CDATA ${eta _{text{e}}}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>η</mml:mi><mml:mrow><mml:mtext>e</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"sstad0b88ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>. Hence, the periphery, width, length and area of the <italic toggle=\"yes\">µ</italic>LEDs determine EQE, which provides insight into the pixel design of <italic toggle=\"yes\">µ</italic>LED displays.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"26 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138691639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-13DOI: 10.1088/1361-6641/ad06c0
Shengkuo Zhang, Hongliang Wang, Peng Zhang, Gang Cao
Abstract This work aims to solve the problem of tradeoff between various properties and spurious mode suppression in surface acoustic wave (SAW) resonators. A high-angle rotated Y -cut LiNbO 3 (LN)/SiO 2 /Si multilayered structure was proposed to balance the electromechanical coupling coefficient ( K 2 ) and temperature coefficient of frequency ( TCF ), and the propagation characteristics of Rayleigh mode were simulated by the finite element method. For the widely existing spurious modes, the shear-horizontal wave and longitudinal modes were eliminated by optimizing the cut angle of LN and electrode thickness, and a method of double-layer electrode transverse modulation was proposed to suppress the transverse modes. This method reduces the mass loading effect by replacing the electrode from Cu to Cu/Al. Moreover, the Al thicknesses in different regions are changed to perform the transverse modulation, and thus a widespread suppression of transverse modes is achieved by exciting the piston mode and enhancing the energy constraint, with a significant improvement on quality factor at the resonance frequency. Eventually, the spurious-free SAW resonator has the K 2 of 9.5% and the TCF close to zero. This work provides a feasible scheme for the design of high performance SAW resonators with spurious mode suppression.
{"title":"High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation","authors":"Shengkuo Zhang, Hongliang Wang, Peng Zhang, Gang Cao","doi":"10.1088/1361-6641/ad06c0","DOIUrl":"https://doi.org/10.1088/1361-6641/ad06c0","url":null,"abstract":"Abstract This work aims to solve the problem of tradeoff between various properties and spurious mode suppression in surface acoustic wave (SAW) resonators. A high-angle rotated Y -cut LiNbO 3 (LN)/SiO 2 /Si multilayered structure was proposed to balance the electromechanical coupling coefficient ( K 2 ) and temperature coefficient of frequency ( TCF ), and the propagation characteristics of Rayleigh mode were simulated by the finite element method. For the widely existing spurious modes, the shear-horizontal wave and longitudinal modes were eliminated by optimizing the cut angle of LN and electrode thickness, and a method of double-layer electrode transverse modulation was proposed to suppress the transverse modes. This method reduces the mass loading effect by replacing the electrode from Cu to Cu/Al. Moreover, the Al thicknesses in different regions are changed to perform the transverse modulation, and thus a widespread suppression of transverse modes is achieved by exciting the piston mode and enhancing the energy constraint, with a significant improvement on quality factor at the resonance frequency. Eventually, the spurious-free SAW resonator has the K 2 of 9.5% and the TCF close to zero. This work provides a feasible scheme for the design of high performance SAW resonators with spurious mode suppression.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"60 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134993473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.1088/1361-6641/ad08dd
Sujith P, Saidi Reddy Parne, Abhinav T
Abstract In recent years, caesium bismuth iodide (Cs 3 Bi 2 I 9 ), a lead (Pb)-free halide perovskite, has drawn more attention as a potential material than traditional semiconductor materials due to its lack of Pb toxicity and its outstanding stability against atmospheric air and moisture. Herein, the inverse temperature crystallization method is adopted to grow high-quality hexagonal-phase Cs 3 Bi 2 I 9 perovskite single crystals. Furthermore, a Cs 3 Bi 2 I 9 perovskite thin film is fabricated by a solution process using the two-step spin coating technique. A collective analysis of the structural properties, surface morphology, thermal stability, phase transition, and optoelectronic properties of these single crystal and polycrystalline thin films provides a comprehensive understanding and design strategy to develop environmentally stable, Pb-free, and high-performance photovoltaic and optoelectronic devices based on Cs 3 Bi 2 I 9 perovskite. The findings of this study contribute to the advancement of perovskite-based technologies and pave the way for their successful integration into the renewable energy and optoelectronics industries.
{"title":"Exploring the synthesis, structure, and optoelectronic properties of lead-free halide perovskite Cs3Bi2I9 in single crystal and polycrystalline forms","authors":"Sujith P, Saidi Reddy Parne, Abhinav T","doi":"10.1088/1361-6641/ad08dd","DOIUrl":"https://doi.org/10.1088/1361-6641/ad08dd","url":null,"abstract":"Abstract In recent years, caesium bismuth iodide (Cs 3 Bi 2 I 9 ), a lead (Pb)-free halide perovskite, has drawn more attention as a potential material than traditional semiconductor materials due to its lack of Pb toxicity and its outstanding stability against atmospheric air and moisture. Herein, the inverse temperature crystallization method is adopted to grow high-quality hexagonal-phase Cs 3 Bi 2 I 9 perovskite single crystals. Furthermore, a Cs 3 Bi 2 I 9 perovskite thin film is fabricated by a solution process using the two-step spin coating technique. A collective analysis of the structural properties, surface morphology, thermal stability, phase transition, and optoelectronic properties of these single crystal and polycrystalline thin films provides a comprehensive understanding and design strategy to develop environmentally stable, Pb-free, and high-performance photovoltaic and optoelectronic devices based on Cs 3 Bi 2 I 9 perovskite. The findings of this study contribute to the advancement of perovskite-based technologies and pave the way for their successful integration into the renewable energy and optoelectronics industries.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"65 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-10DOI: 10.1088/1361-6641/ad08de
Arif Demir, Osman Pakma, Ishak Afsin Kariper, Şadan Özden, Nejmettin Avcı
Abstract In this study, undoped and silver (Ag) doped hafnium oxide (HfO 2 ) thin films were prepared by sol-gel dipping method and their effect as an interface material in a p-Si-based metal-oxide-semiconductor device was investigated for the first time. The structural effects of Ag doping were investigated using x-ray diffraction patterns. Al/HfO 2 :Ag/p-Si devices were fabricated using these films, and their electrical properties were characterized by measuring current-voltage ( I – V ) curves at room temperature. The ideality factor values of the devices decreased from 4.09 to 2.20 as the Ag doping ratio increased. Simultaneously, the barrier height values increased from 0.60 eV to 0.81 eV. The calculated series resistance values, determined by two different methods, demonstrated that the lowest resistance values were obtained at a 1% Ag doping ratio. Furthermore, the interface state densities were found to vary with the doping ratio. The improvement in electrical parameters resulting from Ag doping can be attributed to the reduction in molar volume due to structural phase transformation. The decrease in the ideality factor suggests enhanced carrier transport efficiency, while the increase in barrier height indicates improved energy band alignment at the metal/semiconductor interface.
{"title":"Effect of silver doping on electrical characteristics of Aluminum/HfO<sub>2</sub>/p-silicon metal-oxide-semiconductor devices","authors":"Arif Demir, Osman Pakma, Ishak Afsin Kariper, Şadan Özden, Nejmettin Avcı","doi":"10.1088/1361-6641/ad08de","DOIUrl":"https://doi.org/10.1088/1361-6641/ad08de","url":null,"abstract":"Abstract In this study, undoped and silver (Ag) doped hafnium oxide (HfO 2 ) thin films were prepared by sol-gel dipping method and their effect as an interface material in a p-Si-based metal-oxide-semiconductor device was investigated for the first time. The structural effects of Ag doping were investigated using x-ray diffraction patterns. Al/HfO 2 :Ag/p-Si devices were fabricated using these films, and their electrical properties were characterized by measuring current-voltage ( I – V ) curves at room temperature. The ideality factor values of the devices decreased from 4.09 to 2.20 as the Ag doping ratio increased. Simultaneously, the barrier height values increased from 0.60 eV to 0.81 eV. The calculated series resistance values, determined by two different methods, demonstrated that the lowest resistance values were obtained at a 1% Ag doping ratio. Furthermore, the interface state densities were found to vary with the doping ratio. The improvement in electrical parameters resulting from Ag doping can be attributed to the reduction in molar volume due to structural phase transformation. The decrease in the ideality factor suggests enhanced carrier transport efficiency, while the increase in barrier height indicates improved energy band alignment at the metal/semiconductor interface.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"65 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01Epub Date: 2022-03-27DOI: 10.1177/11297298221085421
Michael George, James Lane, Tushar J Vachharajani
Central vein catheter is a convenient and preferred vascular access for blood purification therapy in intensive care unit. Utilizing ultrasound to access the central vein is considered standard of care. However, critically ill patients can pose challenges while acquiring an optimal ultrasound image. The presence of subcutaneous air pockets, concerns for air embolism, and excessive bleeding from the exit site is one such clinical situation. We describe our experience with a unique situation while placing a tunneled dialysis catheter in a COVID-19 patient with acute respiratory failure and subcutaneous emphysema.
{"title":"Challenges with tunneled dialysis catheter placement with subcutaneous emphysema.","authors":"Michael George, James Lane, Tushar J Vachharajani","doi":"10.1177/11297298221085421","DOIUrl":"10.1177/11297298221085421","url":null,"abstract":"<p><p>Central vein catheter is a convenient and preferred vascular access for blood purification therapy in intensive care unit. Utilizing ultrasound to access the central vein is considered standard of care. However, critically ill patients can pose challenges while acquiring an optimal ultrasound image. The presence of subcutaneous air pockets, concerns for air embolism, and excessive bleeding from the exit site is one such clinical situation. We describe our experience with a unique situation while placing a tunneled dialysis catheter in a COVID-19 patient with acute respiratory failure and subcutaneous emphysema.</p>","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":"1235-1238"},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82201213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-31DOI: 10.1088/1361-6641/ad03fc
Jaekeun Baek, Surin An, Ahhyun Park, Ki-Yeon Kim, Sang Jeen Hong
Abstract 3D-NAND flash memory is currently essential in the semiconductor industry due to the interference issue between memory cells of the conventional planar type. In order to vertically stack the memory, an oxide–nitride stack structure is formed using plasma enhanced chemical vapor deposition (PECVD) equipment. Thereafter, part of the silicon nitride (Si 3 N 4 ) layer is removed by wet etching using phosphoric acid (H 3 PO 4 ) to make space for the memory cell. At this time, it is important to selectively wet etch only the Si 3 N 4 film while protecting the silicon oxide (SiO 2 ). Therefore, in this study, the process parameters that affect the etch rate in PECVD were derived, and the correlation with the hydrogen content, surface roughness, and thin film density, which are the thin film characteristics that the parameters affect, were investigated. Through the experimental results, we confirmed that hydrogen content increases according to the deposition pressure, affects the surface roughness, and can be an important factor in improving the wet etching rate.
{"title":"Characterization of PECVD Si3N4 thin film in multiple oxide-nitride stack for 3D-NAND flash memory","authors":"Jaekeun Baek, Surin An, Ahhyun Park, Ki-Yeon Kim, Sang Jeen Hong","doi":"10.1088/1361-6641/ad03fc","DOIUrl":"https://doi.org/10.1088/1361-6641/ad03fc","url":null,"abstract":"Abstract 3D-NAND flash memory is currently essential in the semiconductor industry due to the interference issue between memory cells of the conventional planar type. In order to vertically stack the memory, an oxide–nitride stack structure is formed using plasma enhanced chemical vapor deposition (PECVD) equipment. Thereafter, part of the silicon nitride (Si 3 N 4 ) layer is removed by wet etching using phosphoric acid (H 3 PO 4 ) to make space for the memory cell. At this time, it is important to selectively wet etch only the Si 3 N 4 film while protecting the silicon oxide (SiO 2 ). Therefore, in this study, the process parameters that affect the etch rate in PECVD were derived, and the correlation with the hydrogen content, surface roughness, and thin film density, which are the thin film characteristics that the parameters affect, were investigated. Through the experimental results, we confirmed that hydrogen content increases according to the deposition pressure, affects the surface roughness, and can be an important factor in improving the wet etching rate.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"15 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135769503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-27DOI: 10.1088/1361-6641/ad0791
Sina Zare Pakzad, Seckin Akinci, Mehrdad Karimzadehkhouei, B. Erdem Alaca
Abstract Silicon nanowires are among the most promising nanotechnology building blocks in innovative devices with numerous applications as nanoelectromechanical systems. Downscaling the physical size of these devices and optimization of material functionalities by engineering their structure are two promising strategies for further enhancement of their performance for integrated circuits and future-generation sensors and actuators. Integration of silicon nanowires as transduction elements for inertial sensor applications is one prominent example for an intelligent combination of such building blocks for multiple functionalities within a single sensor. Currently, the efforts in this field are marred by the lack of batch fabrication techniques compatible with semiconductor manufacturing. Development of new fabrication techniques for such one-dimensional structures will eliminate the drawbacks associated with assembly issues. The current study aims to explore the limits of batch fabrication for a single nanowire within a thick Si layer. The objective of the current work goes beyond the state of the art with significant improvements to the recent viable approach on the monolithic fabrication of nanowires, which was based on a conformal side-wall coating for the protection of the nanoscale silicon line followed by deep etch of the substrate transforming the protected layer into a silicon nanowire. The newly developed fabrication approach eliminates side wall protection and thereby reduces both process complexity and process temperature. The technique yields promising results with possible improvements for future micro and nanofabrication processes.
{"title":"Simplified top-down fabrication of sub-micron silicon nanowires","authors":"Sina Zare Pakzad, Seckin Akinci, Mehrdad Karimzadehkhouei, B. Erdem Alaca","doi":"10.1088/1361-6641/ad0791","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0791","url":null,"abstract":"Abstract Silicon nanowires are among the most promising nanotechnology building blocks in innovative devices with numerous applications as nanoelectromechanical systems. Downscaling the physical size of these devices and optimization of material functionalities by engineering their structure are two promising strategies for further enhancement of their performance for integrated circuits and future-generation sensors and actuators. Integration of silicon nanowires as transduction elements for inertial sensor applications is one prominent example for an intelligent combination of such building blocks for multiple functionalities within a single sensor. Currently, the efforts in this field are marred by the lack of batch fabrication techniques compatible with semiconductor manufacturing. Development of new fabrication techniques for such one-dimensional structures will eliminate the drawbacks associated with assembly issues. The current study aims to explore the limits of batch fabrication for a single nanowire within a thick Si layer. The objective of the current work goes beyond the state of the art with significant improvements to the recent viable approach on the monolithic fabrication of nanowires, which was based on a conformal side-wall coating for the protection of the nanoscale silicon line followed by deep etch of the substrate transforming the protected layer into a silicon nanowire. The newly developed fabrication approach eliminates side wall protection and thereby reduces both process complexity and process temperature. The technique yields promising results with possible improvements for future micro and nanofabrication processes.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"114 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136318959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-19DOI: 10.1088/1361-6641/ad04eb
Rohini P Patil, Ankita Shrikant Nikam, Shivanand Teli, Ashkan Vakilipour Takaloo, Rajanish K. Kamat, Tukaram D. Dongale, Pradip Kamble, Kalyanrao Garadkar K M
Abstract The existing work addresses the chemical synthesis of NiFe2O4 (NFO) nanoparticles (NPs) with the help of PVP as a capping agent and NiFe2O4 NPs are used as a switching layer material in memory device. For the confirmation of the materials phase, composition, and optical properties, various analytical techniques were used. By the support of the X-ray diffraction (XRD) technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy (FE-SEM) was used to confirm the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FT-IR) were applied to identify the of NiFe2O4 NPs functional groups. For the non-volatile memory device , Ag/NFO/FTO was fabricated, which shows bipolar resistive switching with good endurance (104 cycles) and retention (6 x 103 s). The I–V characteristics of the actual device indicates that the deposition order of the film is a decisive part in the device performance. Moreover, the conduction and resistive switching mechanism of the device were also carried out.
以PVP为封盖剂，化学合成了NiFe2O4纳米粒子(NPs)，并将其用作存储器件的开关层材料。为了确定材料的相、组成和光学性质，使用了各种分析技术。在x射线衍射(XRD)技术的支持下，测定了晶体结构(立方尖晶石)和晶粒尺寸(20.12 nm)。采用场发射扫描电镜(FE-SEM)对材料形貌进行了表征。利用拉曼光谱和傅里叶变换红外光谱(FT-IR)对NiFe2O4 NPs的官能团进行了鉴定。对于非易失性存储器件，制备了Ag/NFO/FTO，其双极电阻开关具有良好的续航时间(104次循环)和保持时间(6 x 103 s)。实际器件的I-V特性表明，薄膜的沉积顺序是器件性能的决定性因素。此外，还研究了该器件的导通和电阻开关机理。
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