Pub Date : 2024-05-13DOI: 10.1088/1361-6641/ad4abe
P. Das, H. Finch, Holly. J. Edwards, S. Almalki, Vin Dhanak, Rajat Mahapatra, I. Mitrovic
Sc2O3 is a promising gate dielectric for surface passivation in GaN-based devices. However, the interface quality and band alignment of sputtered Sc2O3 on GaN is not fully explored. In this work, X-ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry (VASE) wereperformed to extract the discontinuities in the valence and conduction band of Sc2O3/GaN system. Sc2O3 films were deposited on GaN using radio frequency sputtering. The valence band offset of Sc2O3/GaN was deterimened to be 0.76±0.1 eV using Kraut's method. The Sc2O3band gap of 6.03± 0.25 eV has been measured using O 1s energy loss spectroscopy. The electron affinity measurements of GaN and Sc2O3 using XPS secondary electron cut-off spectra provide additional degree of accuracy to derived band line-up for Sc2O3/GaN interface. The band alignment results are compared with literature values of bandoffsets determined experimentally and theoretically for differently grown Sc2O3films on GaN.
Sc2O3 是一种很有前途的栅电介质，可用于氮化镓基器件的表面钝化。然而，对 GaN 上溅射 Sc2O3 的界面质量和能带排列还没有进行充分的探索。本研究采用 X 射线光电子能谱 (XPS) 和变角光谱椭偏仪 (VASE) 来提取 Sc2O3/GaN 系统价带和导带的不连续性。Sc2O3 薄膜通过射频溅射沉积在 GaN 上。利用克劳特方法确定了 Sc2O3/GaN 的价带偏移为 0.76±0.1 eV。利用 O 1s 能量损失光谱法测得 Sc2O3 带隙为 6.03± 0.25 eV。利用 XPS 二次电子截止谱对 GaN 和 Sc2O3 的电子亲和性进行了测量，为 Sc2O3/GaN 界面的带排列提供了更高的精确度。带排列结果与文献中针对 GaN 上不同生长方式的 Sc2O3 薄膜通过实验和理论确定的带集值进行了比较。
{"title":"Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications","authors":"P. Das, H. Finch, Holly. J. Edwards, S. Almalki, Vin Dhanak, Rajat Mahapatra, I. Mitrovic","doi":"10.1088/1361-6641/ad4abe","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4abe","url":null,"abstract":"\u0000 Sc2O3 is a promising gate dielectric for surface passivation in GaN-based devices. However, the interface quality and band alignment of sputtered Sc2O3 on GaN is not fully explored. In this work, X-ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry (VASE) wereperformed to extract the discontinuities in the valence and conduction band of Sc2O3/GaN system. Sc2O3 films were deposited on GaN using radio frequency sputtering. The valence band offset of Sc2O3/GaN was deterimened to be 0.76±0.1 eV using Kraut's method. The Sc2O3band gap of 6.03± 0.25 eV has been measured using O 1s energy loss spectroscopy. The electron affinity measurements of GaN and Sc2O3 using XPS secondary electron cut-off spectra provide additional degree of accuracy to derived band line-up for Sc2O3/GaN interface. The band alignment results are compared with literature values of bandoffsets determined experimentally and theoretically for differently grown Sc2O3films on GaN.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140985737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-13DOI: 10.1088/1361-6641/ad4a6c
Stefan Svensson, William A. Beck, D. Donetski, G. Kipshidze, G. Belenky
InAsSb can absorb light across the entire long wavelength range (8-12 μm) and shares many of the other relevant basic materials properties of HgCdTe, the current incumbent detector technology for this band. We discuss here the device architectures in relation to the crystal growth technical aspects using molecular beam epitaxy and propose a simplified design consisting of an InAsSb absorber with a graded wider bandgap top layer of lattice matched AlInAsSb that exhibits a spontaneously formed p-n-junction. The 77 K device performance is predicted with a numerical model that indicates that quantum efficiencies of at least 75% should be achievable.
{"title":"Design considerations for a long-wavelength InAsSb detector diode","authors":"Stefan Svensson, William A. Beck, D. Donetski, G. Kipshidze, G. Belenky","doi":"10.1088/1361-6641/ad4a6c","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4a6c","url":null,"abstract":"\u0000 InAsSb can absorb light across the entire long wavelength range (8-12 μm) and shares many of the other relevant basic materials properties of HgCdTe, the current incumbent detector technology for this band. We discuss here the device architectures in relation to the crystal growth technical aspects using molecular beam epitaxy and propose a simplified design consisting of an InAsSb absorber with a graded wider bandgap top layer of lattice matched AlInAsSb that exhibits a spontaneously formed p-n-junction. The 77 K device performance is predicted with a numerical model that indicates that quantum efficiencies of at least 75% should be achievable.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140982489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-13DOI: 10.1088/1361-6641/ad4a65
Shikha Kumari, Rashmi Singh, Shivam Kumar, N. V. L. N. Murty, D. Planson, Christophe Raynaud, C. Sonneville, Hervé Morel, L. Phung, Thi Huong Ngo, Philippe de Mierry, É. Frayssinet, Yvon Cordier, Hassan Maher, R. Sommet, J. Nallatamby, P. Raja
The forward and reverse current transport mechanisms, temperature dependence of Schottky barrier height (SBH) and ideality factor, barrier inhomogeneity analysis, and trap parameters for Schottky barrier diodes (SBDs) fabricated on 4H-SiC, GaN-on-GaN and AlGaN/GaN epitaxial substrates are reported. High SBH is identified for Ni/4H-SiC (1.31 eV) and Ti/4H-SiC (1.18 eV) SBDs with a low leakage current density of < 10-8 A/cm2 at -200 V. Thermally stimulated capacitance (TSCAP) detects the well-known Z1/2 electron trap at EC – 0.65 eV in both 4H-SiC SBDs, while an additional deep-level trap at EC – 1.13 eV is found only in Ni/4H-SiC SBDs. The vertical Ni/GaN SBD exhibits a promising SBH of 0.83 eV, and two electron traps at EC – 0.18 eV and EC – 0.56 eV are identified from deep-level transient Fourier spectroscopy (DLTFS). A peculiar two-diode model behaviour is detected at Metal/GaN/AlGaN/GaN interface of high-electron mobility transistor (HEMT); the first diode (SBH-1 of 1.15 eV) exists at the standard Metal/GaN Schottky junction, whereas the second diode (SBH-2 of 0.72 eV) forms due to the energy difference between the AlGaN conduction band and the heterojunction Fermi level. The compensational Fe-doping-related buffer traps at EC – 0.5 eV and EC – 0.6 eV are determined in the AlGaN/GaN HEMT, through the drain current transient spectroscopy (DCTS) experiments.
{"title":"Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates","authors":"Shikha Kumari, Rashmi Singh, Shivam Kumar, N. V. L. N. Murty, D. Planson, Christophe Raynaud, C. Sonneville, Hervé Morel, L. Phung, Thi Huong Ngo, Philippe de Mierry, É. Frayssinet, Yvon Cordier, Hassan Maher, R. Sommet, J. Nallatamby, P. Raja","doi":"10.1088/1361-6641/ad4a65","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4a65","url":null,"abstract":"\u0000 The forward and reverse current transport mechanisms, temperature dependence of Schottky barrier height (SBH) and ideality factor, barrier inhomogeneity analysis, and trap parameters for Schottky barrier diodes (SBDs) fabricated on 4H-SiC, GaN-on-GaN and AlGaN/GaN epitaxial substrates are reported. High SBH is identified for Ni/4H-SiC (1.31 eV) and Ti/4H-SiC (1.18 eV) SBDs with a low leakage current density of < 10-8 A/cm2 at -200 V. Thermally stimulated capacitance (TSCAP) detects the well-known Z1/2 electron trap at EC – 0.65 eV in both 4H-SiC SBDs, while an additional deep-level trap at EC – 1.13 eV is found only in Ni/4H-SiC SBDs. The vertical Ni/GaN SBD exhibits a promising SBH of 0.83 eV, and two electron traps at EC – 0.18 eV and EC – 0.56 eV are identified from deep-level transient Fourier spectroscopy (DLTFS). A peculiar two-diode model behaviour is detected at Metal/GaN/AlGaN/GaN interface of high-electron mobility transistor (HEMT); the first diode (SBH-1 of 1.15 eV) exists at the standard Metal/GaN Schottky junction, whereas the second diode (SBH-2 of 0.72 eV) forms due to the energy difference between the AlGaN conduction band and the heterojunction Fermi level. The compensational Fe-doping-related buffer traps at EC – 0.5 eV and EC – 0.6 eV are determined in the AlGaN/GaN HEMT, through the drain current transient spectroscopy (DCTS) experiments.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140983252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a beta-phase gallium oxide (β-Ga2O3) vertical FinFET with diamond-gate has been studied by Silvaco-ATLAS simulation. The diamond-gate structure achieves adjustable pin (p-insulator-n) junction owing to the diamond-SiO2-Ga2O3 heterostructure. This design also enhances heat dissipation by virtue of the high thermal conductivity of the diamond. Compared to conventional FinFETs, the diamond-gate FinFET (DG-FinFET) reduces the static operating temperature rise by around 17.30%. Additionally, due to its greater heat dissipation capacity, DG-FinFETs provide an 5.84% increase in current density at 1 kA/cm2 current density level. The structural changes in the diamond-gate also result in a significant reduction in the gate-source capacitance (CGS). At 1 MHz operating frequency and the same gate voltage, DG-FinFETs have 69.29% less gate-source charge (QGS), 70.80% less charge/discharge delay time, 73.70% less switching loss, and 57.15% less conduction loss. Overall, the simulation and analysis presented in this work indicate a promising advancement of the DG-FinFET structure in high-power and rapid switching applications.
{"title":"Thermal management and switching performance of β-Ga2O3 vertical FinFET with diamond-gate structure","authors":"Yehong Li, Xuefeng Zheng, Fang Zhang, Yunlong He, Zijian Yuan, Xinyang Wang, Yingzhe Wang, Xiaohua Ma, Yue Hao","doi":"10.1088/1361-6641/ad4abf","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4abf","url":null,"abstract":"\u0000 In this paper, a beta-phase gallium oxide (β-Ga2O3) vertical FinFET with diamond-gate has been studied by Silvaco-ATLAS simulation. The diamond-gate structure achieves adjustable pin (p-insulator-n) junction owing to the diamond-SiO2-Ga2O3 heterostructure. This design also enhances heat dissipation by virtue of the high thermal conductivity of the diamond. Compared to conventional FinFETs, the diamond-gate FinFET (DG-FinFET) reduces the static operating temperature rise by around 17.30%. Additionally, due to its greater heat dissipation capacity, DG-FinFETs provide an 5.84% increase in current density at 1 kA/cm2 current density level. The structural changes in the diamond-gate also result in a significant reduction in the gate-source capacitance (CGS). At 1 MHz operating frequency and the same gate voltage, DG-FinFETs have 69.29% less gate-source charge (QGS), 70.80% less charge/discharge delay time, 73.70% less switching loss, and 57.15% less conduction loss. Overall, the simulation and analysis presented in this work indicate a promising advancement of the DG-FinFET structure in high-power and rapid switching applications.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140986172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-12DOI: 10.1088/1361-6641/ad4a2d
Siyin Guo, Q. Zhu, Yilin Chen, Meng Zhang, Minhan Mi, Jiejie Zhu, Yi-Min Lei, Sirui An, Jia-Ni Lu, Can Gong, Xiaohua Ma
In this paper, the impact of upper channel layer thickness on the electrical characteristics and hysteresis behavior of double-channel InAlN/GaN HEMTs were investigated. The devices with an upper channel layer thickness of 20 nm exhibit higher output current and lower Ron compared to devices with a thickness of 10/6 nm. This is attributed to the higher sheet carrier density and the reduced scattering. However, a 20 nm thickness of the upper channel layer in HEMT exhibits hysteresis phenomena in its electrical characteristics. For this hysteresis phenomenon, capacitance measurements and TEM characterization indicate that it is caused by dislocations in the lower barrier layer under the gate. A thicker upper channel layer is beneficial to increasing the output current of the device but leads to degradation of the lower InAlN barrier layer, resulting in hysteresis. This study provides an optimized solution for the growth and device fabrication of double-channel InAlN materials.
{"title":"Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs","authors":"Siyin Guo, Q. Zhu, Yilin Chen, Meng Zhang, Minhan Mi, Jiejie Zhu, Yi-Min Lei, Sirui An, Jia-Ni Lu, Can Gong, Xiaohua Ma","doi":"10.1088/1361-6641/ad4a2d","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4a2d","url":null,"abstract":"\u0000 In this paper, the impact of upper channel layer thickness on the electrical characteristics and hysteresis behavior of double-channel InAlN/GaN HEMTs were investigated. The devices with an upper channel layer thickness of 20 nm exhibit higher output current and lower Ron compared to devices with a thickness of 10/6 nm. This is attributed to the higher sheet carrier density and the reduced scattering. However, a 20 nm thickness of the upper channel layer in HEMT exhibits hysteresis phenomena in its electrical characteristics. For this hysteresis phenomenon, capacitance measurements and TEM characterization indicate that it is caused by dislocations in the lower barrier layer under the gate. A thicker upper channel layer is beneficial to increasing the output current of the device but leads to degradation of the lower InAlN barrier layer, resulting in hysteresis. This study provides an optimized solution for the growth and device fabrication of double-channel InAlN materials.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140987229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Impacts of eliminating access regions on DC and thermal performances of GaN-based MIS-HEMT have been studied using a device of 4-μm gate length. Nominal absence of access regions was achieved by MOCVD-regrown heavily n-doped GaN contact region extended to the 2DEG channel (sheet resistance as low as 14 Ω/□ and ohmic contact resistance of 0.20 Ω·mm) and 22-nm-thick AlN/Al2O3/HfO2 insulator layers acting as both gate dielectrics and sidewall spacers. As a result, a low knee voltage (2.5 V @ VGS = + 2 V) comparable to deeply-scaled devices was attained, revealing the dominant role of access regions in knee voltages. High linearity at lower supply voltages (gate voltage swing of 7.3 V @ VDS = 5 V) and a faster gate voltage swing saturation trend with VDS increasing was observed benefiting from the improved utility of applied lateral voltage. Moreover, a much lower thermal resistance compared with that of the conventional MIS-HEMT structure (146 vs. 202 K/W) was extracted by a static-pulsed I-V measurement method. Simplified TCAD simulations were conducted to explain the underlying mechanisms, demonstrating that the enhanced surface heat flow covered by gate metal as well as the more uniform electric field along the 2DEG channel accounts for the better capability of heat management in the device free of access regions. Our results indicate how much enhancements in terms of DC and thermal performances can be obtained by eliminating access regions in a GaN-based MIS-HEMT structure.
{"title":"Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT","authors":"Xinkun Zhang, Yu Zhou, Shuqian Xu, Haoran Qie, Qingru Wang, Qian Li, Jianxun Liu, Xiujian Sun, Quan Dai, Xiaoning Zhan, Gaofei Zhi, Qian Sun, Hui Yang","doi":"10.1088/1361-6641/ad4a2e","DOIUrl":"https://doi.org/10.1088/1361-6641/ad4a2e","url":null,"abstract":"\u0000 Impacts of eliminating access regions on DC and thermal performances of GaN-based MIS-HEMT have been studied using a device of 4-μm gate length. Nominal absence of access regions was achieved by MOCVD-regrown heavily n-doped GaN contact region extended to the 2DEG channel (sheet resistance as low as 14 Ω/□ and ohmic contact resistance of 0.20 Ω·mm) and 22-nm-thick AlN/Al2O3/HfO2 insulator layers acting as both gate dielectrics and sidewall spacers. As a result, a low knee voltage (2.5 V @ VGS = + 2 V) comparable to deeply-scaled devices was attained, revealing the dominant role of access regions in knee voltages. High linearity at lower supply voltages (gate voltage swing of 7.3 V @ VDS = 5 V) and a faster gate voltage swing saturation trend with VDS increasing was observed benefiting from the improved utility of applied lateral voltage. Moreover, a much lower thermal resistance compared with that of the conventional MIS-HEMT structure (146 vs. 202 K/W) was extracted by a static-pulsed I-V measurement method. Simplified TCAD simulations were conducted to explain the underlying mechanisms, demonstrating that the enhanced surface heat flow covered by gate metal as well as the more uniform electric field along the 2DEG channel accounts for the better capability of heat management in the device free of access regions. Our results indicate how much enhancements in terms of DC and thermal performances can be obtained by eliminating access regions in a GaN-based MIS-HEMT structure.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140987240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.1088/1361-6641/ad49c7
Shalu Gupta, Rakesh Kumar
This study demonstrates a proficient and eco-friendly synthesis of SnO2 nanostructures using a hydrothermal method, without the requirement of extra surfactants. The synthesis was systematically performed by adjusting the molar ratio of stannic chloride to sodium hydroxide and varying the pH settings. It was noted that the pH value rises according to the concentration of sodium hydroxide. A comprehensive analysis was performed to characterize the resulting nanostructures, which involved studying their structural features, chemical composition, morphology, and optical properties. An X-ray diffraction (XRD) analysis showed that increasing the pH values resulted in a noticeable improvement in the crystalline structure and a decrease in the density of surface defects. The SnO2 nanostructures, synthesized using different pH settings, were subsequently assessed for their photocatalytic performance in the degradation of methylene blue (MB) dye under simulated solar irradiation. Surprisingly, the nanostructure produced at higher pH levels showed outstanding results, as 97% of the dye was broken down in just 70 minutes when exposed to simulated solar radiation. The analysis uncovered a maximum rate constant (k) value of 0.04 min−1, determined using pseudo first-order rate kinetics. In order to better understand the photodegradation process, scavenger experiments were performed to identify the active species involved. These investigations provided valuable insights into the complex mechanisms that drive the observed photocatalytic activity. This study not only enhances the progress of SnO2 nanostructures but also highlights their potential as strong and environmentally friendly materials for effective photocatalytic applications.
{"title":"Green synthesis and photocatalytic proficiency of tunable SnO2 nanostructures: unveiling environmental-friendly strategies for sustainable water remediation","authors":"Shalu Gupta, Rakesh Kumar","doi":"10.1088/1361-6641/ad49c7","DOIUrl":"https://doi.org/10.1088/1361-6641/ad49c7","url":null,"abstract":"\u0000 This study demonstrates a proficient and eco-friendly synthesis of SnO2 nanostructures using a hydrothermal method, without the requirement of extra surfactants. The synthesis was systematically performed by adjusting the molar ratio of stannic chloride to sodium hydroxide and varying the pH settings. It was noted that the pH value rises according to the concentration of sodium hydroxide. A comprehensive analysis was performed to characterize the resulting nanostructures, which involved studying their structural features, chemical composition, morphology, and optical properties. An X-ray diffraction (XRD) analysis showed that increasing the pH values resulted in a noticeable improvement in the crystalline structure and a decrease in the density of surface defects. The SnO2 nanostructures, synthesized using different pH settings, were subsequently assessed for their photocatalytic performance in the degradation of methylene blue (MB) dye under simulated solar irradiation. Surprisingly, the nanostructure produced at higher pH levels showed outstanding results, as 97% of the dye was broken down in just 70 minutes when exposed to simulated solar radiation. The analysis uncovered a maximum rate constant (k) value of 0.04 min−1, determined using pseudo first-order rate kinetics. In order to better understand the photodegradation process, scavenger experiments were performed to identify the active species involved. These investigations provided valuable insights into the complex mechanisms that drive the observed photocatalytic activity. This study not only enhances the progress of SnO2 nanostructures but also highlights their potential as strong and environmentally friendly materials for effective photocatalytic applications.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140990975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.1088/1361-6641/ad49c6
Getye Behailu Yitagesu, Dereje Tsegaye Leku, Getachew Adam Workneh
Today’s energy demand is highly increased with the world’s population growth and technological advancement. Natural dye-sensitized solar cells (N-DSSCs) are attracting research areas as an alternative and renewable energy source due to their simple preparation technique, availability, cost-effectiveness, and environmentally friendliness. In the present work, we have successfully fabricated DSSC from Thymus schimperi Ronniger plant flowers for the first time. The solvents used for extraction of the flower dye were deionized water and its mixture with ethanol. The Thymus schimperi Ronniger flowers extracted dye solutions and sensitized photoanodes were characterized by FTIR and UV-Vis characterization techniques. The crystallinity of TiO2 film was analyzed by the XRD technique and shows pure anatase phase behavior. The photoelectrochemical solar cell performance parameters, like, short circuit current density (JSC), open circuit voltage VOC), fill factor (FF), and efficiency were evaluated from the current density-voltage (J-V) measurement using a Keithley 2450 source meter. DSSC sensitized with extracted dye solution by the mixture of water and ethanol showed better performance (1.37%) as compared with that of extracted dye solution by Deionized water alone (1,02%). Keywords: Renewable energy, Dye-sensitized solar cells, Thymus Schimperi Ronniger, photoelectrochemical
{"title":"Thymus schimperi Ronniger plant flowers extracted dye-sensitized solar cells","authors":"Getye Behailu Yitagesu, Dereje Tsegaye Leku, Getachew Adam Workneh","doi":"10.1088/1361-6641/ad49c6","DOIUrl":"https://doi.org/10.1088/1361-6641/ad49c6","url":null,"abstract":"\u0000 Today’s energy demand is highly increased with the world’s population growth and technological advancement. Natural dye-sensitized solar cells (N-DSSCs) are attracting research areas as an alternative and renewable energy source due to their simple preparation technique, availability, cost-effectiveness, and environmentally friendliness. In the present work, we have successfully fabricated DSSC from Thymus schimperi Ronniger plant flowers for the first time. The solvents used for extraction of the flower dye were deionized water and its mixture with ethanol. The Thymus schimperi Ronniger flowers extracted dye solutions and sensitized photoanodes were characterized by FTIR and UV-Vis characterization techniques. The crystallinity of TiO2 film was analyzed by the XRD technique and shows pure anatase phase behavior. The photoelectrochemical solar cell performance parameters, like, short circuit current density (JSC), open circuit voltage VOC), fill factor (FF), and efficiency were evaluated from the current density-voltage (J-V) measurement using a Keithley 2450 source meter. DSSC sensitized with extracted dye solution by the mixture of water and ethanol showed better performance (1.37%) as compared with that of extracted dye solution by Deionized water alone (1,02%). Keywords: Renewable energy, Dye-sensitized solar cells, Thymus Schimperi Ronniger, photoelectrochemical","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140992809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a novel double-gate trench silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (Ron,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS (C-LDMOS), when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the Ron,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/Ron,sp) is increased by 397.2% from 3.6 MW·cm−2 to 17.9 MW·cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.
{"title":"A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study","authors":"Jinjun Guo, Hongli Dai, Luoxin Wang, Yuming Xue, Haitao Lyu, Wenze Niu","doi":"10.1088/1361-6641/ad49c9","DOIUrl":"https://doi.org/10.1088/1361-6641/ad49c9","url":null,"abstract":"\u0000 In this paper, a novel double-gate trench silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (Ron,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS (C-LDMOS), when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the Ron,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/Ron,sp) is increased by 397.2% from 3.6 MW·cm−2 to 17.9 MW·cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140992472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.1088/1361-6641/ad49c8
Thanh Chi Pham, Hiep Tran, James G Partridge, Anthony Holland
Analytical models for investigating Metal-Semiconductor (M-S) ohmic contacts in test structures have conventionally included resistive-only contact interfaces. Given that M-S contacts are fundamentally governed by electron tunnelling across the potential energy barrier at the M-S interface, this simplified approach may result in misinterpretation. This paper describes, in detail, a novel Resistor-to-Schottky (RSB) barrier analytical model that enables a more in-depth exploration of the physics underlying ohmic contacts. The proposed model is analysed and compared with models constructed using the semiconductor device simulator tool TCAD. The study reveals significant differences in outcomes when employing the RSB model rather than the conventional Transmission Line (TLM) model and contributes to a more comprehensive understanding of M-S ohmic contacts in test structures.
{"title":"Resistor-to-Schottky barrier analytical model for ohmic contact test structures","authors":"Thanh Chi Pham, Hiep Tran, James G Partridge, Anthony Holland","doi":"10.1088/1361-6641/ad49c8","DOIUrl":"https://doi.org/10.1088/1361-6641/ad49c8","url":null,"abstract":"\u0000 Analytical models for investigating Metal-Semiconductor (M-S) ohmic contacts in test structures have conventionally included resistive-only contact interfaces. Given that M-S contacts are fundamentally governed by electron tunnelling across the potential energy barrier at the M-S interface, this simplified approach may result in misinterpretation. This paper describes, in detail, a novel Resistor-to-Schottky (RSB) barrier analytical model that enables a more in-depth exploration of the physics underlying ohmic contacts. The proposed model is analysed and compared with models constructed using the semiconductor device simulator tool TCAD. The study reveals significant differences in outcomes when employing the RSB model rather than the conventional Transmission Line (TLM) model and contributes to a more comprehensive understanding of M-S ohmic contacts in test structures.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140991040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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