Pub Date : 2023-10-18DOI: 10.1088/1361-6641/ad01d3
Shuang Li, Yang Wang, Hongke Tao, Qing Liu, Zhiwen Zeng, Xiangliang Jin, Hongjiao Yang
Abstract Based on the 0.18 μ m CMOS process, proposed a new power-rail electrostatic discharge clamp circuit. The proposed circuit can adjust the voltage biased to the big clamp NMOS (M big ) gate by adjusting the width of one MOS transistor, and the feedback path is designed to prolong the response time of M big . The simulation results demonstrated that the voltage biased to the M big of the proposed circuit has a relatively steady state and the M big has a longer response time, which can effectively reduce the damage to the gate oxide layer of the M big with large voltage overshoot. The transmission line pulse test results show that compared to the M big of the conventional circuit, the M big of the proposed circuit has higher trigger voltage, lower on-resistance, and better robustness.
摘要基于0.18 μ m CMOS工艺，提出了一种新的电源导轨静电放电箝位电路。该电路通过调节一个MOS晶体管的宽度来调节大钳位NMOS (M big)栅极的偏置电压，并设计了延长M big响应时间的反馈路径。仿真结果表明，该电路偏置于M大的电压具有相对稳定的状态，且M大具有较长的响应时间，可以有效地减少对电压超调较大的M大栅极氧化层的破坏。传输线脉冲测试结果表明，与传统电路的M big相比，该电路的M big具有更高的触发电压、更低的导通电阻和更好的鲁棒性。
{"title":"Resistor-less power-rail ESD clamp circuit design with adjustable NMOS gate biased voltage","authors":"Shuang Li, Yang Wang, Hongke Tao, Qing Liu, Zhiwen Zeng, Xiangliang Jin, Hongjiao Yang","doi":"10.1088/1361-6641/ad01d3","DOIUrl":"https://doi.org/10.1088/1361-6641/ad01d3","url":null,"abstract":"Abstract Based on the 0.18 μ m CMOS process, proposed a new power-rail electrostatic discharge clamp circuit. The proposed circuit can adjust the voltage biased to the big clamp NMOS (M big ) gate by adjusting the width of one MOS transistor, and the feedback path is designed to prolong the response time of M big . The simulation results demonstrated that the voltage biased to the M big of the proposed circuit has a relatively steady state and the M big has a longer response time, which can effectively reduce the damage to the gate oxide layer of the M big with large voltage overshoot. The transmission line pulse test results show that compared to the M big of the conventional circuit, the M big of the proposed circuit has higher trigger voltage, lower on-resistance, and better robustness.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135824323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-17DOI: 10.1088/1361-6641/ad03fd
Yachao Wang, Tao Yang, Lei Shi, Yanhui Chen, Yang Mei, Bao-Ping Zhang
Abstract Electron leakage in the active region decreases the internal quantum efficiency and impedes the performance of Gallium Nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs). In this study, we propose a novel InGaN last-quantum barrier (LQB) structure with gradient Indium (In) composition, and the device performance was simulated by the commercial software PICS3D. Compared with the device with conventional GaN LQB, the electron leakage is greatly reduced and the hole injection efficiency is also improved by the graded LQB structure. Consequently, the threshold current is reduced by 44%, and output power is increased by 392% in GaN-based VCSEL based on composition gradient InGaN LQB. The composition gradient InGaN can also allow us to increase the thickness of the LQB in epitaxy without degrading the carrier injection efficiency due to the reduced polarization in the LQB. The results of this study suggest that the composition gradient InGaN LQB is promising for the realization of high-performance GaN-based VCSELs
{"title":"Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier","authors":"Yachao Wang, Tao Yang, Lei Shi, Yanhui Chen, Yang Mei, Bao-Ping Zhang","doi":"10.1088/1361-6641/ad03fd","DOIUrl":"https://doi.org/10.1088/1361-6641/ad03fd","url":null,"abstract":"Abstract Electron leakage in the active region decreases the internal quantum efficiency and impedes the performance of Gallium Nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs). In this study, we propose a novel InGaN last-quantum barrier (LQB) structure with gradient Indium (In) composition, and the device performance was simulated by the commercial software PICS3D. Compared with the device with conventional GaN LQB, the electron leakage is greatly reduced and the hole injection efficiency is also improved by the graded LQB structure. Consequently, the threshold current is reduced by 44%, and output power is increased by 392% in GaN-based VCSEL based on composition gradient InGaN LQB. The composition gradient InGaN can also allow us to increase the thickness of the LQB in epitaxy without degrading the carrier injection efficiency due to the reduced polarization in the LQB. The results of this study suggest that the composition gradient InGaN LQB is promising for the realization of high-performance GaN-based VCSELs","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135944215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-17DOI: 10.1088/1361-6641/acfe90
Yuewei Zhang, James S Speck
{"title":"Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 125018)","authors":"Yuewei Zhang, James S Speck","doi":"10.1088/1361-6641/acfe90","DOIUrl":"https://doi.org/10.1088/1361-6641/acfe90","url":null,"abstract":"","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136038083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-16DOI: 10.1088/1361-6641/ad0175
Sharmila B, Priyanka Dwivedi
Abstract This paper presents the fabrication and broadband photosensing of bare TiO 2 and In 2 O 3 decorated TiO 2 based photodetectors. The photosensing properties of the In 2 O 3 decorated TiO 2 were compared with the bare TiO 2 . The proposed photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet to near-infrared wavelengths. The In 2 O 3 decorated TiO 2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio in the order of 4 × 10 3 , which is 10 3 times higher than the TiO 2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA W –1 and 4.97 × 10 12 Jones respectively. Moreover, In 2 O 3 decorated TiO 2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.
摘要本文介绍了裸二氧化钛和二氧化钛修饰二氧化钛光电探测器的制备和宽带光敏技术。比较了In 2o3修饰tio2与裸tio2的光敏性能。提出的光敏器件是晶圆可扩展的。这些装置在从紫外线到近红外波长的宽光谱范围内进行了测试。在450 nm处，铟氧修饰tio2异质结光电探测器的光电流得到改善，光暗比达到4 × 10 3，是tio2光电探测器的10 3倍。此外，该异质结光电探测器的响应率和探测率分别为1415 mA W -1和4.97 × 10 12 Jones。此外，In 2o3修饰的tio2异质结具有高度可重复性，上升/下降时间为1.42/0.09 s。所制备的光电探测器在宽带光传感领域具有较大的应用潜力。
{"title":"In2O3 decorated TiO2 for broadband photosensing applications","authors":"Sharmila B, Priyanka Dwivedi","doi":"10.1088/1361-6641/ad0175","DOIUrl":"https://doi.org/10.1088/1361-6641/ad0175","url":null,"abstract":"Abstract This paper presents the fabrication and broadband photosensing of bare TiO 2 and In 2 O 3 decorated TiO 2 based photodetectors. The photosensing properties of the In 2 O 3 decorated TiO 2 were compared with the bare TiO 2 . The proposed photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet to near-infrared wavelengths. The In 2 O 3 decorated TiO 2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio in the order of 4 × 10 3 , which is 10 3 times higher than the TiO 2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA W –1 and 4.97 × 10 12 Jones respectively. Moreover, In 2 O 3 decorated TiO 2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136077751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-12DOI: 10.1088/1361-6641/acff13
Fengyan Niu, Qisheng He, Shiran Wu, Weiyan Lei, Yi Shen
Abstract The most sustainable preparation method for nanostructured materials must be urgently determined. In particular, the influence of different precursor pretreatment strategies on the structure and photocatalytic performance of highly attractive Graphitic carbon nitride photocatalyst is necessary to determine the most effective precursor pretreatment strategy. In this paper, three different precursor pretreatment methods were used to prepare g-C 3 N 4 materials, so namely direct mixing (CN-C), freeze-drying, hydrothermal (CN-H) with thermal condensation polymerization two-step method processed urea, melamine and NH 4 Cl precursor mixtures. The results showed that NH 4 Cl, as a template, would not destroy the integrity of the tristriazine structural units in the product, and the CN-H sample had a lamellar structure, and the specific surface area and pore volume of the sample increased, which could provide more active reaction sites for photocatalytic H 2 production, had the highest and most stable H 2 evolution rate, up to 118.4 μ mol g −1 , about 1.7 times CN-C’s. This strategy provides a new idea for the design of g-C 3 N 4 photocatalyst.
{"title":"Pretreatment strategies of precursors for efficient photocatalytic hydrogen production of graphitic phase carbon nitride","authors":"Fengyan Niu, Qisheng He, Shiran Wu, Weiyan Lei, Yi Shen","doi":"10.1088/1361-6641/acff13","DOIUrl":"https://doi.org/10.1088/1361-6641/acff13","url":null,"abstract":"Abstract The most sustainable preparation method for nanostructured materials must be urgently determined. In particular, the influence of different precursor pretreatment strategies on the structure and photocatalytic performance of highly attractive Graphitic carbon nitride photocatalyst is necessary to determine the most effective precursor pretreatment strategy. In this paper, three different precursor pretreatment methods were used to prepare g-C 3 N 4 materials, so namely direct mixing (CN-C), freeze-drying, hydrothermal (CN-H) with thermal condensation polymerization two-step method processed urea, melamine and NH 4 Cl precursor mixtures. The results showed that NH 4 Cl, as a template, would not destroy the integrity of the tristriazine structural units in the product, and the CN-H sample had a lamellar structure, and the specific surface area and pore volume of the sample increased, which could provide more active reaction sites for photocatalytic H 2 production, had the highest and most stable H 2 evolution rate, up to 118.4 μ mol g −1 , about 1.7 times CN-C’s. This strategy provides a new idea for the design of g-C 3 N 4 photocatalyst.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135922865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-10DOI: 10.1088/1361-6641/acfb32
Lok Ping Ho, Sihua Li, Tianxiang Lin, Jack Cheung, Tony Chau, Francis C C Ling
Abstract Reverse bias currents of ten commercial junction barrier Schottky diodes were measured, and the dies were studied by scanning electron microscope (SEM) and cathodoluminescence (CL) after the de-capsulation of the diodes. Defect emissions (DEs) of 2.62 eV were observed in all the CL spectra. By comparing the SEM images, the integral CL intensity spatial mappings and the reverse bias leakage currents, correlations between the leakage current, the integral CL intensity and the Al-implantation process were established. The data of reverse bias leakage current against the reverse bias voltage taken at room temperature followed the Poole Frenkel emission from the Z 1 / Z 2 carbon vacancy states to the conduction band. The DE at 2.62 eV is associated with the electronic transition from Z 1 / Z 2 to the valence band. The current observation also opens up the feasibility of screening off SiC diodes with large leakage current during production by inspecting the CL intensity before the device fabrication is complete.
{"title":"Correlations between reverse biased leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode","authors":"Lok Ping Ho, Sihua Li, Tianxiang Lin, Jack Cheung, Tony Chau, Francis C C Ling","doi":"10.1088/1361-6641/acfb32","DOIUrl":"https://doi.org/10.1088/1361-6641/acfb32","url":null,"abstract":"Abstract Reverse bias currents of ten commercial junction barrier Schottky diodes were measured, and the dies were studied by scanning electron microscope (SEM) and cathodoluminescence (CL) after the de-capsulation of the diodes. Defect emissions (DEs) of 2.62 eV were observed in all the CL spectra. By comparing the SEM images, the integral CL intensity spatial mappings and the reverse bias leakage currents, correlations between the leakage current, the integral CL intensity and the Al-implantation process were established. The data of reverse bias leakage current against the reverse bias voltage taken at room temperature followed the Poole Frenkel emission from the Z 1 / Z 2 carbon vacancy states to the conduction band. The DE at 2.62 eV is associated with the electronic transition from Z 1 / Z 2 to the valence band. The current observation also opens up the feasibility of screening off SiC diodes with large leakage current during production by inspecting the CL intensity before the device fabrication is complete.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136254653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-09DOI: 10.1088/1361-6641/acfe91
S. R. Pilli, M. Sowjanya, Mohammad Shariq, Y. Altowairqi, D Sabina, Talal M. Althagafi, Wafa Al-Gethami, Aeshah Alasmari, Khairiah Alshehri, Noura E. Alhazmi, Syed Kashif Ali
Abstract Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O 2 gas flow variation on the deposition of La 2 O 3 -doped zinc oxide thin films (TFs) on silicon dioxide (SiO 2 ) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La 2 O 3 -doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La 2 O 3 -doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La 2 O 3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O 2 ) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La 2 O 3 -doped ZnO TFs were exposed to variable (Ar:O 2 ) gas flow ratios. The photoluminescence analysis of ZnO and La 2 O 3 -doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La 2 O 3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La 2 O 3 -doped ZnO TFs, specifically for their application in solar thermal systems.
{"title":"The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films","authors":"S. R. Pilli, M. Sowjanya, Mohammad Shariq, Y. Altowairqi, D Sabina, Talal M. Althagafi, Wafa Al-Gethami, Aeshah Alasmari, Khairiah Alshehri, Noura E. Alhazmi, Syed Kashif Ali","doi":"10.1088/1361-6641/acfe91","DOIUrl":"https://doi.org/10.1088/1361-6641/acfe91","url":null,"abstract":"Abstract Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O 2 gas flow variation on the deposition of La 2 O 3 -doped zinc oxide thin films (TFs) on silicon dioxide (SiO 2 ) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La 2 O 3 -doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La 2 O 3 -doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La 2 O 3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O 2 ) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La 2 O 3 -doped ZnO TFs were exposed to variable (Ar:O 2 ) gas flow ratios. The photoluminescence analysis of ZnO and La 2 O 3 -doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La 2 O 3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La 2 O 3 -doped ZnO TFs, specifically for their application in solar thermal systems.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135044048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract As a promising technology for next-generation displays due to their high brightness and low power consumption, InGaN-based micro light-emitting diodes (Micro-LEDs) have attracted great attention in recent years. In this work, we detailedly investigate the carrier recombination and transportation process in dual-wavelength InGaN/GaN multiple quantum wells (MQWs) Micro-LED arrays under piezo-phototronic effects using electroluminescence (EL) and time-resolution photoluminescence measurements. With the increase of external strain, the violet EL intensity of dual-wavelength Micro-LED arrays first increases obtaining a maximum enhancement of ∼12% and then decreases, whereas blue EL emission almost maintains constant. Additionally, as the size of Micro-LED decreases, the enhancement obtained via piezo-phototronic effect will reduce, which is attributed to their inherently weaker piezoelectric polarization effect. Combining with dynamic analysis of carriers in the blue quantum well (QW), it is concluded that strain-induced interface polarized charges promote the wave function overlap of electron–hole pair, but reduce the injection of hole carriers in blue QW. Superposition of the above two factors enables the blue EL intensity stable under piezoelectric coupling. These results present a promising potential of piezo-phototronic effects to improve the Micro-LEDs devices.
{"title":"Piezo-phototronic enhanced dual-wavelength InGaN/GaN multiple quantum wells Micro-LED arrays","authors":"Yu Yin, Renfeng Chen, Yiwei Duo, Rui He, Jiankun Yang, Xiaoli Ji, Hao Long, Junxi Wang, Tongbo Wei","doi":"10.1088/1361-6641/acfd56","DOIUrl":"https://doi.org/10.1088/1361-6641/acfd56","url":null,"abstract":"Abstract As a promising technology for next-generation displays due to their high brightness and low power consumption, InGaN-based micro light-emitting diodes (Micro-LEDs) have attracted great attention in recent years. In this work, we detailedly investigate the carrier recombination and transportation process in dual-wavelength InGaN/GaN multiple quantum wells (MQWs) Micro-LED arrays under piezo-phototronic effects using electroluminescence (EL) and time-resolution photoluminescence measurements. With the increase of external strain, the violet EL intensity of dual-wavelength Micro-LED arrays first increases obtaining a maximum enhancement of ∼12% and then decreases, whereas blue EL emission almost maintains constant. Additionally, as the size of Micro-LED decreases, the enhancement obtained via piezo-phototronic effect will reduce, which is attributed to their inherently weaker piezoelectric polarization effect. Combining with dynamic analysis of carriers in the blue quantum well (QW), it is concluded that strain-induced interface polarized charges promote the wave function overlap of electron–hole pair, but reduce the injection of hole carriers in blue QW. Superposition of the above two factors enables the blue EL intensity stable under piezoelectric coupling. These results present a promising potential of piezo-phototronic effects to improve the Micro-LEDs devices.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134947589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-22DOI: 10.1088/1361-6641/acfa1f
Bruno Godoy Canales, Welder Fernandes Perina, Joao Antonio Martino, Eddy Simoen, Uthlayasankaran Peralagu, Nadine Collaert, Paula Agopian
Abstract In this paper the MISHEMT device (metal/Si 3 N 4 /AlGaN/AlN/GaN - metal–insulator–semiconductor high electron mobility transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain ( A v ). It is shown that the total drain current is composed of three different drain current components, whereof one is related to the MIS channel and the other two are related to high electron mobility transistor (HEMT) channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the early voltage increment in the second plateau where HEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.
{"title":"MISHEMT intrinsic voltage gain under multiple channel output characteristics","authors":"Bruno Godoy Canales, Welder Fernandes Perina, Joao Antonio Martino, Eddy Simoen, Uthlayasankaran Peralagu, Nadine Collaert, Paula Agopian","doi":"10.1088/1361-6641/acfa1f","DOIUrl":"https://doi.org/10.1088/1361-6641/acfa1f","url":null,"abstract":"Abstract In this paper the MISHEMT device (metal/Si 3 N 4 /AlGaN/AlN/GaN - metal–insulator–semiconductor high electron mobility transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain ( A v ). It is shown that the total drain current is composed of three different drain current components, whereof one is related to the MIS channel and the other two are related to high electron mobility transistor (HEMT) channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the early voltage increment in the second plateau where HEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136011533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-07DOI: 10.1088/1361-6641/acf784
An Huang, Yuanxiao Ma, Jia Cheng Li, De Dai, Hui Xia Yang, Zi Chun Liu, De Cheng Zhang, Han Yang, Yuan Huang, Yi Yun Zhang, Xiao Ran Li, Ye Liang Wang, Pui To Lai
In this work, room-temperature-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) have been fabricated with high-k HfLaO as gate dielectric for synaptic devices. By raising the indium content in the a-IGZO film via co-sputtering and treating the HfLaO gate dielectric in an Ar plasma, the TFT with In1.0Ga3.0Zn0.4O2.1 presents excellent electrical characteristics: a high intrinsic carrier mobility of 45.8 cm2 V−1·s−1, a small threshold voltage of 1.93 V, a small hysteresis of −0.015 V, and a small subthreshold swing (SS) of 0.21 V dec−1. Although the oxygen vacancies in the In1.0Ga3.0Zn0.4O2.1 TFT are increased to produce a high carrier mobility, memristive behaviors are hardly observed under zero gate bias due to their occupied states. Various conductance modulations and synaptic plasticities are achieved under a 2-V drain spiking voltage and a small gate bias of 1 V due to migration of oxygen ions and emptying/detrapping of oxygen vacancies in the In1.0Ga3.0Zn0.4O2.1 film, resulting in a concurrent emulation of neurotransmitter and neuromodulator through exploiting the native three-terminal structure of the TFT.
{"title":"Room-temperature-processed synaptic a-IGZO TFT with high-k HfLaO gate dielectric as neuromodulator","authors":"An Huang, Yuanxiao Ma, Jia Cheng Li, De Dai, Hui Xia Yang, Zi Chun Liu, De Cheng Zhang, Han Yang, Yuan Huang, Yi Yun Zhang, Xiao Ran Li, Ye Liang Wang, Pui To Lai","doi":"10.1088/1361-6641/acf784","DOIUrl":"https://doi.org/10.1088/1361-6641/acf784","url":null,"abstract":"In this work, room-temperature-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) have been fabricated with high-k HfLaO as gate dielectric for synaptic devices. By raising the indium content in the a-IGZO film via co-sputtering and treating the HfLaO gate dielectric in an Ar plasma, the TFT with In1.0Ga3.0Zn0.4O2.1 presents excellent electrical characteristics: a high intrinsic carrier mobility of 45.8 cm2 V−1·s−1, a small threshold voltage of 1.93 V, a small hysteresis of −0.015 V, and a small subthreshold swing (SS) of 0.21 V dec−1. Although the oxygen vacancies in the In1.0Ga3.0Zn0.4O2.1 TFT are increased to produce a high carrier mobility, memristive behaviors are hardly observed under zero gate bias due to their occupied states. Various conductance modulations and synaptic plasticities are achieved under a 2-V drain spiking voltage and a small gate bias of 1 V due to migration of oxygen ions and emptying/detrapping of oxygen vacancies in the In1.0Ga3.0Zn0.4O2.1 film, resulting in a concurrent emulation of neurotransmitter and neuromodulator through exploiting the native three-terminal structure of the TFT.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":" ","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48253026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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