A. Uteniyazov, K. Ismailov, A. Muratov, B. K. Dauletmuratov, A. Kamalov
The results of studies of photoelectric injection amplification in the Al–Al2O3–p-CdTe–Mo structure at high bias voltages for the forward current are presented. It has been shown that the spectral sensitivity reaches its maximum value Sλ = 8.4∙104 A/W, when the diode is illuminated with the “own” light at λ = 450 nm and V = 7 V, while when it is illuminated with the “impurity” light at λ = 950 nm Sλ = 4.3∙104 A/W under the same bias voltage. It has been established that when illuminating the structure with the “own” light, the positive feedback mechanism is realized, and when illuminating with “impurity” light, the parametric amplification mechanism is realized.
{"title":"Amplification of photoelectric injection in the photodiode based on large-grain cadmium telluride films","authors":"A. Uteniyazov, K. Ismailov, A. Muratov, B. K. Dauletmuratov, A. Kamalov","doi":"10.15407/spqeo25.02.157","DOIUrl":"https://doi.org/10.15407/spqeo25.02.157","url":null,"abstract":"The results of studies of photoelectric injection amplification in the Al–Al2O3–p-CdTe–Mo structure at high bias voltages for the forward current are presented. It has been shown that the spectral sensitivity reaches its maximum value Sλ = 8.4∙104 A/W, when the diode is illuminated with the “own” light at λ = 450 nm and V = 7 V, while when it is illuminated with the “impurity” light at λ = 950 nm Sλ = 4.3∙104 A/W under the same bias voltage. It has been established that when illuminating the structure with the “own” light, the positive feedback mechanism is realized, and when illuminating with “impurity” light, the parametric amplification mechanism is realized.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"46 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80431719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, the dynamic response of the optical gain of optical integrated device composed of a heterojunction bipolar transistor (HBT) and a laser diode (LD) has been numerically analyzed. This type of optical integrated device is called transistor laser (TL). First, the rate equation of LD has been solved to obtain its transfer function. Second, the overall transfer function of the whole structure has been analyzed numerically. The effect of HBT cutoff frequency on the amplitude and phase frequency response has been studied. The obtained results show that HBT has a strong influence on the device performance. In particular, higher values of HBT cutoff frequency result in lower amplitudes and higher phase values in the low-frequency range. The device is stable and has a fast response and high optical gain at higher frequencies. Therefore, it can be used as an optical amplifier or optical switch in high-speed optical systems.
{"title":"Dynamic performance analysis of lasing mode optical integrated device","authors":"S. Eladl, K. Sharshar, M. H. Saad","doi":"10.15407/spqeo25.02.196","DOIUrl":"https://doi.org/10.15407/spqeo25.02.196","url":null,"abstract":"In this paper, the dynamic response of the optical gain of optical integrated device composed of a heterojunction bipolar transistor (HBT) and a laser diode (LD) has been numerically analyzed. This type of optical integrated device is called transistor laser (TL). First, the rate equation of LD has been solved to obtain its transfer function. Second, the overall transfer function of the whole structure has been analyzed numerically. The effect of HBT cutoff frequency on the amplitude and phase frequency response has been studied. The obtained results show that HBT has a strong influence on the device performance. In particular, higher values of HBT cutoff frequency result in lower amplitudes and higher phase values in the low-frequency range. The device is stable and has a fast response and high optical gain at higher frequencies. Therefore, it can be used as an optical amplifier or optical switch in high-speed optical systems.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"58 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91522014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The magneto-optical Kerr effect in Gd20Co80 alloy and cobalt thin films has been studied in a broad spectral range applying spectral ellipsometry experimental technique. The results of the experiments showed the complex nature of the complex Kerr angle dispersion curves. A quantum mechanical formalism for degenerate and non-degenerate Landau levels for quasi-free electrons in ferromagnetic material has been developed in order to analyze the experimental data. The equivalence of relations for off-diagonal dielectric tensor elements for non-degenerate Landau levels to the classical case of the motion of quasi-free electrons along circular trajectories in a magnetic field has been theoretically shown. The degenerate Landau levels in this approach are the result of motion of electrons in small confined volumes near rare-earth alloy atoms. Rotation of light polarization occurs in this case due to transitions between subbands having different magnetic quantum numbers. This theoretical approach allowed us to interpret in detail shapes and sign of the complex Kerr angle dispersion curves, which actually include the contributions of optical transitions between degenerate and non-degenerate energy levels. The complex Kerr angle sign is determined by the magnetization magnetic field direction for non-degenerate Landau levels and the Hund rule for degenerate Landau levels.
{"title":"Magneto-optic Kerr effect in Gd20Co80 alloy","authors":"V. G. Kudin, S. Rozouvan, V. S. Staschuk","doi":"10.15407/spqeo25.02.203","DOIUrl":"https://doi.org/10.15407/spqeo25.02.203","url":null,"abstract":"The magneto-optical Kerr effect in Gd20Co80 alloy and cobalt thin films has been studied in a broad spectral range applying spectral ellipsometry experimental technique. The results of the experiments showed the complex nature of the complex Kerr angle dispersion curves. A quantum mechanical formalism for degenerate and non-degenerate Landau levels for quasi-free electrons in ferromagnetic material has been developed in order to analyze the experimental data. The equivalence of relations for off-diagonal dielectric tensor elements for non-degenerate Landau levels to the classical case of the motion of quasi-free electrons along circular trajectories in a magnetic field has been theoretically shown. The degenerate Landau levels in this approach are the result of motion of electrons in small confined volumes near rare-earth alloy atoms. Rotation of light polarization occurs in this case due to transitions between subbands having different magnetic quantum numbers. This theoretical approach allowed us to interpret in detail shapes and sign of the complex Kerr angle dispersion curves, which actually include the contributions of optical transitions between degenerate and non-degenerate energy levels. The complex Kerr angle sign is determined by the magnetization magnetic field direction for non-degenerate Landau levels and the Hund rule for degenerate Landau levels.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76265241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
From the position of conceptions inherent to semiconductor physics and semiconductor technology, the processes occurring in conductors of the second class, which take place due to the current flow in them, have been considered in this paper. It has been shown that using the several composite materials consisting of a porous matrix filled with an electrolyte enables to obtain multilayer structures, in which potential barriers appear in the electrolyte medium. These barriers are caused by the difference in properties inherent to layers of porous matrix. Considered here has been the prospect of creating the new devices based on the second-class conductors capable to control the direction and magnitude of the current flow in these conductors that are in a liquid state (in electrolytes). In other words, it was considered the possibility to obtain the ionic devices that are closest in their functional properties to basic electronic devices, such as diodes, transistors, etc.
{"title":"Principles of creating the devices that are able to control the current flow in the second class conductors","authors":"Y. Bacherikov, O. B. Okhrimenko","doi":"10.15407/spqeo25.02.137","DOIUrl":"https://doi.org/10.15407/spqeo25.02.137","url":null,"abstract":"From the position of conceptions inherent to semiconductor physics and semiconductor technology, the processes occurring in conductors of the second class, which take place due to the current flow in them, have been considered in this paper. It has been shown that using the several composite materials consisting of a porous matrix filled with an electrolyte enables to obtain multilayer structures, in which potential barriers appear in the electrolyte medium. These barriers are caused by the difference in properties inherent to layers of porous matrix. Considered here has been the prospect of creating the new devices based on the second-class conductors capable to control the direction and magnitude of the current flow in these conductors that are in a liquid state (in electrolytes). In other words, it was considered the possibility to obtain the ionic devices that are closest in their functional properties to basic electronic devices, such as diodes, transistors, etc.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84576730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper describes the compensation method for atmospheric attenuation of laser radiation, which can be implemented in active electro-optical systems with pre-detector dynamic spectral processing of optical signals. In these electro-optical systems, the spectral flux of sensing radiation is formed using multispectral laser signals based on a priori information about the spectral reflectance of the target and background. The sensing signal formed in this way ensures maximum suppression of the background signal at the output of system with minimal attenuation of the target signal. The influence of atmospheric radiation attenuation on operation of an active electro-optical system with dynamic spectral processing has been analyzed. It has been shown that the laser radiation attenuation in the atmosphere significantly affects the efficiency of dynamic spectral processing of optical signals (leads to a decrease in the target image contrast). The developed compensation method for atmospheric attenuation of radiation in active electro-optical systems with dynamic spectral processing is based on the fact that the spectral intensity of the sensing radiation is formed not only on the basis of a priori data on spectral characteristics of the target and background, but also takes into account the spectral transmittance of the optical radiation propagation medium.
{"title":"Compensation method for atmospheric attenuation of laser radiation in active electro-optical systems with dynamic spectral processing of optical signals","authors":"L. Kupchenko, A. S. Rybiak, А.V. Ponomar","doi":"10.15407/spqeo25.02.211","DOIUrl":"https://doi.org/10.15407/spqeo25.02.211","url":null,"abstract":"This paper describes the compensation method for atmospheric attenuation of laser radiation, which can be implemented in active electro-optical systems with pre-detector dynamic spectral processing of optical signals. In these electro-optical systems, the spectral flux of sensing radiation is formed using multispectral laser signals based on a priori information about the spectral reflectance of the target and background. The sensing signal formed in this way ensures maximum suppression of the background signal at the output of system with minimal attenuation of the target signal. The influence of atmospheric radiation attenuation on operation of an active electro-optical system with dynamic spectral processing has been analyzed. It has been shown that the laser radiation attenuation in the atmosphere significantly affects the efficiency of dynamic spectral processing of optical signals (leads to a decrease in the target image contrast). The developed compensation method for atmospheric attenuation of radiation in active electro-optical systems with dynamic spectral processing is based on the fact that the spectral intensity of the sensing radiation is formed not only on the basis of a priori data on spectral characteristics of the target and background, but also takes into account the spectral transmittance of the optical radiation propagation medium.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88204959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
WNanophysics is rapidly developing for the recent couple of decades. Unique physical properties of materials at the nanoscale are the reason for this rapid development. Ideas, materials and structures of nanophysics have found their wide application in related fields of modern science, including biology and medicine. This short review is devoted to the application of nanophysics in modern medicine. The main focus was on application of ideas and physical phenomena of nanophysics in oncology and antiviral therapy. We have focused on the use of nanosystems both for tumor imaging and for the struggle against some types of tumors. The use of nanoparticles as nanocontainers for targeted drug delivery was briefly discussed. We also demonstrated how the effects of nanophysics can be used to develop new non-traditional methods of antiviral therapy. The focus of these methods was the idea of physical (field) action of nanoparticles on the viruses, which is based on the local-field enhancement effect that is the reason of ponderomotive forces acting on the viruses up to destruction of viral envelopes.
{"title":"Nanophysics in modern medicine","authors":"V. Lozovski, V. Lysenko, N. Rusinchuk","doi":"10.15407/spqeo25.02.185","DOIUrl":"https://doi.org/10.15407/spqeo25.02.185","url":null,"abstract":"WNanophysics is rapidly developing for the recent couple of decades. Unique physical properties of materials at the nanoscale are the reason for this rapid development. Ideas, materials and structures of nanophysics have found their wide application in related fields of modern science, including biology and medicine. This short review is devoted to the application of nanophysics in modern medicine. The main focus was on application of ideas and physical phenomena of nanophysics in oncology and antiviral therapy. We have focused on the use of nanosystems both for tumor imaging and for the struggle against some types of tumors. The use of nanoparticles as nanocontainers for targeted drug delivery was briefly discussed. We also demonstrated how the effects of nanophysics can be used to develop new non-traditional methods of antiviral therapy. The focus of these methods was the idea of physical (field) action of nanoparticles on the viruses, which is based on the local-field enhancement effect that is the reason of ponderomotive forces acting on the viruses up to destruction of viral envelopes.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76826525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Vernydub, O. Kyrylenko, O. Konoreva, Y. Olikh, O. Radkevych, D. Stratilat, V. Tartachnyk
The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙1016 cm–2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.
本文介绍了反向偏压下未辐照和受电子(E = 2 MeV, F = 8.2∙1016 cm-2)照射的磷化镓(GaP)发光二极管(led)的场效应研究结果。考虑了空间电荷区载流子的雪崩倍增和隧穿击穿。发现电子辐照后击穿电压升高。分析了未辐照和辐照二极管在20 ~ 500℃温度范围内退火的影响。
{"title":"Field effects in electron-irradiated GaP LEDs","authors":"R. Vernydub, O. Kyrylenko, O. Konoreva, Y. Olikh, O. Radkevych, D. Stratilat, V. Tartachnyk","doi":"10.15407/spqeo25.02.179","DOIUrl":"https://doi.org/10.15407/spqeo25.02.179","url":null,"abstract":"The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2∙1016 cm–2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"106 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77054123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Myroniuk, M. Dusheyko, V. Karpyna, D. Myroniuk, O. Bykov, O. Olifan, O. Kolomys, V. Strelchuk, A. Korchovyi, S. Starik, V. Tkach, A. Ievtushenko
Cu–Al–O thin films were grown on Si (111) substrates by using the reactive ion-beam sputtering (RIBS) method within the temperature range 80 to 380 °C. The effect of thermal annealing of Cu–Al–O films under various regimes of cooling on the microstructure, morphology, optical properties and photocatalytic activity were examined. The properties of annealed Cu–Al–O films were studied using atomic force microscope (AFM), energy dispersive X-ray spectroscopy (EDX), and Fourier transform infrared spectrometry (FTIR). The X-ray diffraction patterns show appearance only CuAl2O4 phase after thermal annealing of Cu–Al–O thin films at 900 °C. Raman scattering confocal measurements have also confirmed the presence of CuO phases in annealed Cu–Al–O samples. AFM results have indicated that the greatest RMS roughness is observed in CuAl2O4 films after temperature annealing under the fast cooling regime. Photodegradation of CuAl2O4 films was investigated using methyl orange as model pollutant. Present results indicate that CuAl2O4 photocatalysts are potential candidate for the practical application in photocatalytic degradation of organic compounds.
{"title":"Structural, vibrational and photodegradation properties of CuAl2O4 films","authors":"L. Myroniuk, M. Dusheyko, V. Karpyna, D. Myroniuk, O. Bykov, O. Olifan, O. Kolomys, V. Strelchuk, A. Korchovyi, S. Starik, V. Tkach, A. Ievtushenko","doi":"10.15407/spqeo25.02.164","DOIUrl":"https://doi.org/10.15407/spqeo25.02.164","url":null,"abstract":"Cu–Al–O thin films were grown on Si (111) substrates by using the reactive ion-beam sputtering (RIBS) method within the temperature range 80 to 380 °C. The effect of thermal annealing of Cu–Al–O films under various regimes of cooling on the microstructure, morphology, optical properties and photocatalytic activity were examined. The properties of annealed Cu–Al–O films were studied using atomic force microscope (AFM), energy dispersive X-ray spectroscopy (EDX), and Fourier transform infrared spectrometry (FTIR). The X-ray diffraction patterns show appearance only CuAl2O4 phase after thermal annealing of Cu–Al–O thin films at 900 °C. Raman scattering confocal measurements have also confirmed the presence of CuO phases in annealed Cu–Al–O samples. AFM results have indicated that the greatest RMS roughness is observed in CuAl2O4 films after temperature annealing under the fast cooling regime. Photodegradation of CuAl2O4 films was investigated using methyl orange as model pollutant. Present results indicate that CuAl2O4 photocatalysts are potential candidate for the practical application in photocatalytic degradation of organic compounds.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87251597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Nosenko, I. Vorona, S. Lemishko, I. Golovina, V. O. Yukhymchuk, S. Okulov, V. Neimash, V. Povarchuk, S. Solopan, A. Belous
Amplification of a dosimetric EPR signal in mineralized biological materials available in limited quantities has been demonstrated in this paper. Powders of irradiated enamel, dentin, and bone tissue were placed into silica ampoules with the outer diameter close to 1.4 mm. To amplify the signal, the dielectric insert in the form of cylinder with the outer radius 2.85 mm, the inner radius 0.75 mm, and the height 1.85 mm made of a high-κ and low-loss ceramic material BaTi4O9 + 8.5% ZnO has been used. It has been shown that maximum signal amplification (about an order of magnitude) has been achieved when the sample is completely inserted into this dielectric. It has been found that the line shape of the dosimetric signal is not distorted, if using the dielectric insert. Decomposition of the amplified EPR spectra allowed us to determine the relative contribution of two types of CO2– radicals to the dosimetric signal, which coincides with the literature data.
{"title":"Enhancement of radiation-induced EPR signal in bioapatites","authors":"V. Nosenko, I. Vorona, S. Lemishko, I. Golovina, V. O. Yukhymchuk, S. Okulov, V. Neimash, V. Povarchuk, S. Solopan, A. Belous","doi":"10.15407/spqeo25.02.173","DOIUrl":"https://doi.org/10.15407/spqeo25.02.173","url":null,"abstract":"Amplification of a dosimetric EPR signal in mineralized biological materials available in limited quantities has been demonstrated in this paper. Powders of irradiated enamel, dentin, and bone tissue were placed into silica ampoules with the outer diameter close to 1.4 mm. To amplify the signal, the dielectric insert in the form of cylinder with the outer radius 2.85 mm, the inner radius 0.75 mm, and the height 1.85 mm made of a high-κ and low-loss ceramic material BaTi4O9 + 8.5% ZnO has been used. It has been shown that maximum signal amplification (about an order of magnitude) has been achieved when the sample is completely inserted into this dielectric. It has been found that the line shape of the dosimetric signal is not distorted, if using the dielectric insert. Decomposition of the amplified EPR spectra allowed us to determine the relative contribution of two types of CO2– radicals to the dosimetric signal, which coincides with the literature data.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"74 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86285021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Lepikh, V. Santoniy, L. M. Budiyanskaya, V. Yanko, A. P. Balaban
This work describes an original intelligent electronic-optical (laser) sensor (EOS) operating in the infrared range for systems that detect ground and aerodynamic objects and send control commands to the executive devices of portable information-measurement systems using specified algorithms. EOS proposed here differs from the known analogues by its ability of early detection and recognition of high-speed special machinery objects and small-sized unmanned aircrafts. EOS generates and sends probing optical pulses in the direction of a monitored high-speed object, processes the reflected location signal and retrieves the object coordinates and motion parameters. The classification features of the object are determined from the parameters of optical location signal used for object identification with the account the specific nature of optical location information systems.
{"title":"Intelligent electronic-optical sensor for information-measurement system of detection and identification of ground and aerodynamic objects","authors":"Y. Lepikh, V. Santoniy, L. M. Budiyanskaya, V. Yanko, A. P. Balaban","doi":"10.15407/spqeo25.02.219","DOIUrl":"https://doi.org/10.15407/spqeo25.02.219","url":null,"abstract":"This work describes an original intelligent electronic-optical (laser) sensor (EOS) operating in the infrared range for systems that detect ground and aerodynamic objects and send control commands to the executive devices of portable information-measurement systems using specified algorithms. EOS proposed here differs from the known analogues by its ability of early detection and recognition of high-speed special machinery objects and small-sized unmanned aircrafts. EOS generates and sends probing optical pulses in the direction of a monitored high-speed object, processes the reflected location signal and retrieves the object coordinates and motion parameters. The classification features of the object are determined from the parameters of optical location signal used for object identification with the account the specific nature of optical location information systems.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"10 22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82876332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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