F. Sizov, J. Gumenjuk-Sichevska, S. Danilov, Z. Tsybrii
The paper reports the detection of strong polarization-dependent photo-responses in direct narrow-gap (Eg = 0.084 eV at T = 80 K) HgCdTe thin-layer biased and unbiased hot-electron bolometers (HEBs) with receiving antennas under elliptically polarized THz radiation. The observed effects are assumed to be due to the Rashba spin splitting in HgCdTe, caused by large spin-orbit interactions. The studied detectors demonstrate free-carrier polarization-dependent sensitivity to laser radiation with h 0.0044 eV (ν = 1.07 THz) and 0.0025 eV (ν = 0.6 THz), i.e., with photon energies much less than the band-gap (hν << Eg) at T = 80 and 300 K. The polarization-dependent photocurrent in HgCdTe HEBs with and without applied external constant electric field is shown to have angular dependence of photocurrent with directional reversal on switching the photon helicity.
本文报道了在椭圆极化太赫兹辐射下具有接收天线的直接窄间隙(Eg = 0.084 eV, T = 80 K) HgCdTe薄层偏置和无偏置热电子热辐射计(HEBs)中检测到强偏振依赖的光响应。观测到的效应被认为是由于HgCdTe中的Rashba自旋分裂，这是由大的自旋轨道相互作用引起的。所研究的探测器对h 0.0044 eV (ν = 1.07 THz)和0.0025 eV (ν = 0.6 THz)的激光辐射具有自由载流子偏振依赖的灵敏度，即在T = 80和300 K时光子能量远小于带隙(hν << Eg)。在外加恒定电场和不外加恒定电场的情况下，HgCdTe HEBs中的极化相关光电流对光子螺旋度的开关具有角依赖性。
{"title":"Spin dependent polarization response in HgCdTe hot-electron bolometers","authors":"F. Sizov, J. Gumenjuk-Sichevska, S. Danilov, Z. Tsybrii","doi":"10.15407/spqeo25.03.254","DOIUrl":"https://doi.org/10.15407/spqeo25.03.254","url":null,"abstract":"The paper reports the detection of strong polarization-dependent photo-responses in direct narrow-gap (Eg = 0.084 eV at T = 80 K) HgCdTe thin-layer biased and unbiased hot-electron bolometers (HEBs) with receiving antennas under elliptically polarized THz radiation. The observed effects are assumed to be due to the Rashba spin splitting in HgCdTe, caused by large spin-orbit interactions. The studied detectors demonstrate free-carrier polarization-dependent sensitivity to laser radiation with h 0.0044 eV (ν = 1.07 THz) and 0.0025 eV (ν = 0.6 THz), i.e., with photon energies much less than the band-gap (hν << Eg) at T = 80 and 300 K. The polarization-dependent photocurrent in HgCdTe HEBs with and without applied external constant electric field is shown to have angular dependence of photocurrent with directional reversal on switching the photon helicity.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"129 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75400008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using the path-integral approach, we have developed a general solution of the problem of a noise-induced escape or transition of the overdamped one-dimensional potential system at time scales of the order of dynamic relaxation time. The results strongly differ from those obtained before by other methods. Computer simulations confirm the validity of our theory in the relevant time range. The obtained results may be of interest in studies of Josephson junctions, levitating nanoparticles in optical traps, ionic channels, chemical reactions and chemical-physical systems.
{"title":"Short-time dynamics of noise-induced escapes and transitions in overdamped systems","authors":"S. Soskin, V. Sheka, T. Linnik, R. Mannella","doi":"10.15407/spqeo25.03.262","DOIUrl":"https://doi.org/10.15407/spqeo25.03.262","url":null,"abstract":"Using the path-integral approach, we have developed a general solution of the problem of a noise-induced escape or transition of the overdamped one-dimensional potential system at time scales of the order of dynamic relaxation time. The results strongly differ from those obtained before by other methods. Computer simulations confirm the validity of our theory in the relevant time range. The obtained results may be of interest in studies of Josephson junctions, levitating nanoparticles in optical traps, ionic channels, chemical reactions and chemical-physical systems.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81953251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Antonov, A. Lapchuk, V. Petrov, O. Tokalin, V. N. Zenin
An algorithm has been developed for modelling the signals of four-plane photodetector, when moving an axisymmetric light spot along its surface. The form of direction-finding characteristics of photodetector has been calculated for different schemes of illumination of sensitive surface of the detector, which are used in optoelectronic automatic control systems, in particular in the motion control systems for tracking moving objects. Some samples of specialized focusing microprism devices with the distribution of light spot in the focal plane as a central circle with a light ring at its periphery, which are made using diamond micro-cutting based on our simulation results, have been experimentally investigated.
{"title":"Photodetector module of optoelectronic control systems for tracking the moving objects","authors":"E. Antonov, A. Lapchuk, V. Petrov, O. Tokalin, V. N. Zenin","doi":"10.15407/spqeo25.03.315","DOIUrl":"https://doi.org/10.15407/spqeo25.03.315","url":null,"abstract":"An algorithm has been developed for modelling the signals of four-plane photodetector, when moving an axisymmetric light spot along its surface. The form of direction-finding characteristics of photodetector has been calculated for different schemes of illumination of sensitive surface of the detector, which are used in optoelectronic automatic control systems, in particular in the motion control systems for tracking moving objects. Some samples of specialized focusing microprism devices with the distribution of light spot in the focal plane as a central circle with a light ring at its periphery, which are made using diamond micro-cutting based on our simulation results, have been experimentally investigated.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83971050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Pogodin, I. Shender, M. Filep, O. Kokhan, O. Symkanych, T. Malakhovska, L. Suslikov, P. Kopčanský
Micro- and nanocrystalline powders were prepared by grinding of pre-synthesized Ag6PS5I in an agate mortar and a planetary ball mill, which were further investigated using XRD and SEM methods. Appropriate ceramic materials in the form of disks with a relative density of (91…94) ± 1% of the theoretical one were made using the cold pressing method for the obtained powders with subsequent annealing at the temperature 923 K. The values of the ionic and electron components of the total electrical conductivity were obtained analyzing the corresponding frequency dependences of the total electrical conductivity on the Nyquist plots using electrode equivalent circuits. It has been ascertained that reduction of crystallite sizes in Ag6PS5I-based ceramic materials leads to a slight increase in ionic conductivity and a significant increase in the electronic one, resulting in a decrease of the ratio between them.
{"title":"Grain size effect on electrical properties of Ag6PS5I-based ceramic materials","authors":"A. Pogodin, I. Shender, M. Filep, O. Kokhan, O. Symkanych, T. Malakhovska, L. Suslikov, P. Kopčanský","doi":"10.15407/spqeo25.03.294","DOIUrl":"https://doi.org/10.15407/spqeo25.03.294","url":null,"abstract":"Micro- and nanocrystalline powders were prepared by grinding of pre-synthesized Ag6PS5I in an agate mortar and a planetary ball mill, which were further investigated using XRD and SEM methods. Appropriate ceramic materials in the form of disks with a relative density of (91…94) ± 1% of the theoretical one were made using the cold pressing method for the obtained powders with subsequent annealing at the temperature 923 K. The values of the ionic and electron components of the total electrical conductivity were obtained analyzing the corresponding frequency dependences of the total electrical conductivity on the Nyquist plots using electrode equivalent circuits. It has been ascertained that reduction of crystallite sizes in Ag6PS5I-based ceramic materials leads to a slight increase in ionic conductivity and a significant increase in the electronic one, resulting in a decrease of the ratio between them.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81286420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Pekur, V. Sorokin, Yu. E. Nikolaenko, І.V. Pekur, M. Minyaylo
The paper proposes a new method for determining the optimal peak wavelengths of quasi-monochromatic LEDs, when they are combined with white broadband high-power LEDs in lighting systems with tunable correlated color temperature (CCT). Simulation of the resulting radiation spectrum was used to demonstrate the possibility to use the developed method in LED lighting systems with tunable parameters of the synthesized light. The study enables to determine the peak wavelengths of quasi-monochromatic LEDs (474 and 600 nm), which, when being combined with a basic white LED (Cree CMA 2550), allow controlling the widest CCT range. Quasi-monochromatic LEDs with particular optimal spectral parameters allow adjusting CCT within the range from 3098 up to 6712 K, while maintaining a high color rendering index (higher than 80) over the most part (3098 to 5600 K) of the regulation range.
{"title":"Determination of optical parameters in quasi-monochromatic LEDs for implementation of lighting systems with tunable correlated color temperature","authors":"D. Pekur, V. Sorokin, Yu. E. Nikolaenko, І.V. Pekur, M. Minyaylo","doi":"10.15407/spqeo25.03.303","DOIUrl":"https://doi.org/10.15407/spqeo25.03.303","url":null,"abstract":"The paper proposes a new method for determining the optimal peak wavelengths of quasi-monochromatic LEDs, when they are combined with white broadband high-power LEDs in lighting systems with tunable correlated color temperature (CCT). Simulation of the resulting radiation spectrum was used to demonstrate the possibility to use the developed method in LED lighting systems with tunable parameters of the synthesized light. The study enables to determine the peak wavelengths of quasi-monochromatic LEDs (474 and 600 nm), which, when being combined with a basic white LED (Cree CMA 2550), allow controlling the widest CCT range. Quasi-monochromatic LEDs with particular optimal spectral parameters allow adjusting CCT within the range from 3098 up to 6712 K, while maintaining a high color rendering index (higher than 80) over the most part (3098 to 5600 K) of the regulation range.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86811458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we evaluated the effect of the thickness of frontal metallic layer on the electro-optical characteristics of an n-type gallium nitride (n-GaN)-based Schottky barrier ultraviolet (UV) detector using device modeling and numerical simulations. Comparison of the current density-voltage characteristics J(V) calculated for different metals demonstrated that platinum (Pt) is the most suitable metal to form Schottky contacts. The obtained results show that the thickness of the frontal platinum Schottky contact highly affects the spectral responsivity of the detector in the considered UV range of 0.2…0.4 µm. In particular, the detector responsivity at room temperature can reach the peak value of 0.208 A·W–1 at the wavelength of 0.364 µm and the semi-transparent Pt layer as thin as 1 nm. Afterward, it gradually decreases with the increase of the metal layer thickness down to 0.147 A·W–1 for the thickness of the Pt layer of 100 nm.
{"title":"Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors","authors":"F. Bouzid, F. Pezzimenti","doi":"10.15407/spqeo25.03.323","DOIUrl":"https://doi.org/10.15407/spqeo25.03.323","url":null,"abstract":"In this work, we evaluated the effect of the thickness of frontal metallic layer on the electro-optical characteristics of an n-type gallium nitride (n-GaN)-based Schottky barrier ultraviolet (UV) detector using device modeling and numerical simulations. Comparison of the current density-voltage characteristics J(V) calculated for different metals demonstrated that platinum (Pt) is the most suitable metal to form Schottky contacts. The obtained results show that the thickness of the frontal platinum Schottky contact highly affects the spectral responsivity of the detector in the considered UV range of 0.2…0.4 µm. In particular, the detector responsivity at room temperature can reach the peak value of 0.208 A·W–1 at the wavelength of 0.364 µm and the semi-transparent Pt layer as thin as 1 nm. Afterward, it gradually decreases with the increase of the metal layer thickness down to 0.147 A·W–1 for the thickness of the Pt layer of 100 nm.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88075811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. S. Dremliuzhenko, I. Yuriychuk, Z. Zakharuk, V. Deibuk
The features of fusion and growth of Cd1–xMnxTe (0.02 x 0.55) solid solution crystals as well as the dependence of their microhardness on the composition have been studied. Local maxima of the microhardness at x = 0.14 and 0.46 have been experimentally found. Thermodynamics of Cd1–xMnxTe formation in the delta-lattice parameter model has been considered, and the phase diagram of spinodal decomposition in these solid solutions has been found. The empirical pseudopotential method was used to analyze the distribution of the valence charge density during formation of the Cd1–xMnxTe solid solution and its effect on the rearrangement of chemical bonds. It has been shown that the stability of the solid solutions is defined not only by the difference in the lattice constants of the CdTe and MnTe binary compounds but also by the charge exchange between bonds with the different degree of ionicity and the change in the nature of chemical bonds.
{"title":"Specific features of microhardness and thermodynamic stability of the Cd1–xMnxTe solid solutions","authors":"K. S. Dremliuzhenko, I. Yuriychuk, Z. Zakharuk, V. Deibuk","doi":"10.15407/spqeo25.03.282","DOIUrl":"https://doi.org/10.15407/spqeo25.03.282","url":null,"abstract":"The features of fusion and growth of Cd1–xMnxTe (0.02 x 0.55) solid solution crystals as well as the dependence of their microhardness on the composition have been studied. Local maxima of the microhardness at x = 0.14 and 0.46 have been experimentally found. Thermodynamics of Cd1–xMnxTe formation in the delta-lattice parameter model has been considered, and the phase diagram of spinodal decomposition in these solid solutions has been found. The empirical pseudopotential method was used to analyze the distribution of the valence charge density during formation of the Cd1–xMnxTe solid solution and its effect on the rearrangement of chemical bonds. It has been shown that the stability of the solid solutions is defined not only by the difference in the lattice constants of the CdTe and MnTe binary compounds but also by the charge exchange between bonds with the different degree of ionicity and the change in the nature of chemical bonds.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"52 1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78170381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A number of novel two-dimensional materials and nanostructures demonstrate complex single-electron energy dispersion, which is called the mexican-hat dispersion. In this paper, we analyze interaction of a pair of electrons with such an energy dispersion. We show that relative motion of the electron pair is of a very peculiar character. For example, the real space trajectories corresponding to electron-electron scattering can have three reversal points, reversal points at non-zero radial momentum and other unusual features. Despite the repulsive Coulomb interaction, two electrons can be coupled forming a composite quasi-particle – the bi-electron. The bi-electron corresponds to excited states of the two-electron system. Because the bi-electron coupled states exist in continuum of extended (free) states of the electron pair, these states are quasi-resonant and have finite times of life. We found that rotating bi-electron is a long-living composite quasi-particle. The rotating bi-electrons can be in motion. For slowly moving bi-electrons, we have determined the kinetic energy and the effective mass. Due to strongly nonparabolic energy dispersion, the translational motion of the bi-electron is coupled to its internal motion. This results in effective masses dependent on quantum states of the bi-electron. In the paper, properties of the bi-electron have been illustrated for the example of bigraphene in a transverse electric field. We have suggested that investigation of rotating bi-electrons at the mexican-hat single-electron energy dispersion may bring new interesting effects in low-dimensional and low-temperature physics.
{"title":"Rotating bi-electron in two-dimensional systems with mexican-hat single-electron energy dispersion","authors":"V. Kochelap","doi":"10.15407/spqeo25.03.240","DOIUrl":"https://doi.org/10.15407/spqeo25.03.240","url":null,"abstract":"A number of novel two-dimensional materials and nanostructures demonstrate complex single-electron energy dispersion, which is called the mexican-hat dispersion. In this paper, we analyze interaction of a pair of electrons with such an energy dispersion. We show that relative motion of the electron pair is of a very peculiar character. For example, the real space trajectories corresponding to electron-electron scattering can have three reversal points, reversal points at non-zero radial momentum and other unusual features. Despite the repulsive Coulomb interaction, two electrons can be coupled forming a composite quasi-particle – the bi-electron. The bi-electron corresponds to excited states of the two-electron system. Because the bi-electron coupled states exist in continuum of extended (free) states of the electron pair, these states are quasi-resonant and have finite times of life. We found that rotating bi-electron is a long-living composite quasi-particle. The rotating bi-electrons can be in motion. For slowly moving bi-electrons, we have determined the kinetic energy and the effective mass. Due to strongly nonparabolic energy dispersion, the translational motion of the bi-electron is coupled to its internal motion. This results in effective masses dependent on quantum states of the bi-electron. In the paper, properties of the bi-electron have been illustrated for the example of bigraphene in a transverse electric field. We have suggested that investigation of rotating bi-electrons at the mexican-hat single-electron energy dispersion may bring new interesting effects in low-dimensional and low-temperature physics.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75104213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Savchenko, M.K. Riasna, M. Chursanova, T. V. Matveeva, N. Popenko, I. Ivanchenko, E. Kalabukhova
The cadmium manganese telluride (Cd1–xMnxTe) crystals (x < 0.001 and x = 0.02, 0.04, 0.1) grown using the Bridgman method were studied by applying continuous wave and pulsed electron paramagnetic resonance (EPR) spectroscopy in the wide temperature range. The Cd1–xMnxTe crystals with x < 0.001 revealed the EPR spectrum from isolated Mn2+ with g⊥ = g∥ = 2.0074(3), |A⊥| = |A∥| = 56.97 ⋅ 10–4 cm–1, |a| = 30.02⋅10–4 cm–1, while Cd1–xMnxTe crystals with x = 0.02…0.04 are characterized by two single broad isotropic EPR lines of Lorentzian shape (g ~ 2.009 and g ~ 1.99) due to Mn clusters of different sizes. The EPR spectrum of Cd1–xMnxTe crystals with x = 0.01 consists of the single broad line at g ~ 2.01 due to higher level of homogeneity inherent to these crystals. The temperature dependence of spin relaxation times for the isolated Mn2+ center in the Cd1–xMnxTe crystals with x < 0.001 has been described using the conceptions of Orbach process for TM–1 and two-phonon Raman process for T1–1.
{"title":"Continuous wave and pulsed EPR study of Cd1-xMnxTe crystals with different Mn content","authors":"D. Savchenko, M.K. Riasna, M. Chursanova, T. V. Matveeva, N. Popenko, I. Ivanchenko, E. Kalabukhova","doi":"10.15407/spqeo25.03.275","DOIUrl":"https://doi.org/10.15407/spqeo25.03.275","url":null,"abstract":"The cadmium manganese telluride (Cd1–xMnxTe) crystals (x < 0.001 and x = 0.02, 0.04, 0.1) grown using the Bridgman method were studied by applying continuous wave and pulsed electron paramagnetic resonance (EPR) spectroscopy in the wide temperature range. The Cd1–xMnxTe crystals with x < 0.001 revealed the EPR spectrum from isolated Mn2+ with g⊥ = g∥ = 2.0074(3), |A⊥| = |A∥| = 56.97 ⋅ 10–4 cm–1, |a| = 30.02⋅10–4 cm–1, while Cd1–xMnxTe crystals with x = 0.02…0.04 are characterized by two single broad isotropic EPR lines of Lorentzian shape (g ~ 2.009 and g ~ 1.99) due to Mn clusters of different sizes. The EPR spectrum of Cd1–xMnxTe crystals with x = 0.01 consists of the single broad line at g ~ 2.01 due to higher level of homogeneity inherent to these crystals. The temperature dependence of spin relaxation times for the isolated Mn2+ center in the Cd1–xMnxTe crystals with x < 0.001 has been described using the conceptions of Orbach process for TM–1 and two-phonon Raman process for T1–1.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81257651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The quasi-static capacitance-voltage characteristics of the metal-insulator-nanowire structure have been theoretically studied with account of the surface states at the nanowire-insulator interface. At small radii, possible is the case when the entire bulk of nanowire is depleted before the onset of inversion of the conduction type near the surface will occur. In this case, there is a strong deviation of the capacitance-voltage characteristic from that in the standard MIS structure: with increasing voltage, the capacitance of the structure tends not to a constant value equal to the capacitance of the dielectric layer, but to zero.
{"title":"The peculiarity of capacitance-voltage characteristics of the metal-insulator-nanowire structure","authors":"S. Petrosyan, S. Nersesyan","doi":"10.15407/spqeo25.03.289","DOIUrl":"https://doi.org/10.15407/spqeo25.03.289","url":null,"abstract":"The quasi-static capacitance-voltage characteristics of the metal-insulator-nanowire structure have been theoretically studied with account of the surface states at the nanowire-insulator interface. At small radii, possible is the case when the entire bulk of nanowire is depleted before the onset of inversion of the conduction type near the surface will occur. In this case, there is a strong deviation of the capacitance-voltage characteristic from that in the standard MIS structure: with increasing voltage, the capacitance of the structure tends not to a constant value equal to the capacitance of the dielectric layer, but to zero.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"13 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81953682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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