Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609773
S.C. Chen, C. Kuo, Y. Lin, J.C. Wu, L. Horng
The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions. A total of 9 parameter settings are conducted to investigate the four parameters with three levels for each. The four parameters include the substrate temperature, bias power, gas cycle time and C4F8gas flow rate. The source power and the SF6gas flow rate are respectively fixed to a value of 500 W and 120 sccm. The etching bottom roughness and the etching rate are the quality characteristics to evaluate the parameter effect. The results show that both the C4F8flow rate and the bias power have the significant influence on the bottom roughness, while both the cycle time and the bias power play an important role on etching rate. And, the optimum conditions are obtained, of which the predicted quality has been confirmed by verification experiment.
{"title":"Parameter Investigation of Nano-Sized Etching in an ICP Silicon Etching System","authors":"S.C. Chen, C. Kuo, Y. Lin, J.C. Wu, L. Horng","doi":"10.1109/NANOEL.2006.1609773","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609773","url":null,"abstract":"The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions. A total of 9 parameter settings are conducted to investigate the four parameters with three levels for each. The four parameters include the substrate temperature, bias power, gas cycle time and C4F8gas flow rate. The source power and the SF6gas flow rate are respectively fixed to a value of 500 W and 120 sccm. The etching bottom roughness and the etching rate are the quality characteristics to evaluate the parameter effect. The results show that both the C4F8flow rate and the bias power have the significant influence on the bottom roughness, while both the cycle time and the bias power play an important role on etching rate. And, the optimum conditions are obtained, of which the predicted quality has been confirmed by verification experiment.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"634 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133359607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609697
V. Nosik
Nowadays millions of elementary silicon transistors aggregated into microchips could be considered as a symbol of 20thcentury microelectronic technology which has become a spinal bone of postindustrial society propelling other areas of human life. Silicon technology has reached so high level of sophistication that the further evolutionary shrinking of the size of integrated circuits (IC) looks impossible giving way to the revolutionary ideas and new materials. There are obvious limiting factors which earlier have been considered as inevitable sequences of silicon choice: decrease of speed due to the low electron/channel mobility and great interconnect resistance; increase of power consumption due to the leakage currents, various tunneling effects in dense IC; sufficient rise of the manufacturing and IC design cost, rigid requirements on defects. Nevertheless “there is still enough space at the bottom” for new materials which could compete with silicon. Next decades IC industry should step into the post-Roadmap era when the long term anticipation of device parameters could be very difficult if possible at all. Presentation is devoted to the applications such new materials as Carbon NanoTubes (CNT) and silicon nanowires (SiNW) in modern micro and nano electronics. General aspects of hybrid silicon – carbon technologies and possible roadmaps will be considered and illustrated by the results obtained in new CNT center of STMicroelectronics recently established in Singapore.
{"title":"Carbon Nanotubes and Si Nanowires as an Alternative Route to Future Nanoelectronics","authors":"V. Nosik","doi":"10.1109/NANOEL.2006.1609697","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609697","url":null,"abstract":"Nowadays millions of elementary silicon transistors aggregated into microchips could be considered as a symbol of 20thcentury microelectronic technology which has become a spinal bone of postindustrial society propelling other areas of human life. Silicon technology has reached so high level of sophistication that the further evolutionary shrinking of the size of integrated circuits (IC) looks impossible giving way to the revolutionary ideas and new materials. There are obvious limiting factors which earlier have been considered as inevitable sequences of silicon choice: decrease of speed due to the low electron/channel mobility and great interconnect resistance; increase of power consumption due to the leakage currents, various tunneling effects in dense IC; sufficient rise of the manufacturing and IC design cost, rigid requirements on defects. Nevertheless “there is still enough space at the bottom” for new materials which could compete with silicon. Next decades IC industry should step into the post-Roadmap era when the long term anticipation of device parameters could be very difficult if possible at all. Presentation is devoted to the applications such new materials as Carbon NanoTubes (CNT) and silicon nanowires (SiNW) in modern micro and nano electronics. General aspects of hybrid silicon – carbon technologies and possible roadmaps will be considered and illustrated by the results obtained in new CNT center of STMicroelectronics recently established in Singapore.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129900125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609735
S. D. Hutagalung, K. A. Yaacob, S. Sakrani, A. R. Mat Isa
In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quantum dots characterization. BEEM is a new characterization technique by using electrons ejected from the scanning tunneling microscopy (STM) tip to investigate the metal-semiconductor interfaces. Because of the high resolution of the STM system, BEEM is promising in the characterization of quantum dots as the charge transport on individual dot can be characterized compared to the multitude of dots necessitated in other techniques. This method requires three terminals: a connection to the STM tip to inject electrons, a connection to the sample to collect electrons that traverse the interface, and a third grounding terminal. The energy and angular distribution of the injected electrons can be controlled by varying the tip potential. By using the characteristic data of the injected and collected electrons, many useful transport-related properties of the sample can be obtained. The silicon quantum dots (Si QDs) may be fabricated by taking advantage of the Stranski-Krastanov growth model. Germanium layer has been choosed as a barrier layer due to the large lattice mismatch between Si and Ge. The n-type Si
{"title":"The Development of BEEM Modeling for the Characterization of Si/Ge Self-Assembled Quantum Dot Heterostructures","authors":"S. D. Hutagalung, K. A. Yaacob, S. Sakrani, A. R. Mat Isa","doi":"10.1109/NANOEL.2006.1609735","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609735","url":null,"abstract":"In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quantum dots characterization. BEEM is a new characterization technique by using electrons ejected from the scanning tunneling microscopy (STM) tip to investigate the metal-semiconductor interfaces. Because of the high resolution of the STM system, BEEM is promising in the characterization of quantum dots as the charge transport on individual dot can be characterized compared to the multitude of dots necessitated in other techniques. This method requires three terminals: a connection to the STM tip to inject electrons, a connection to the sample to collect electrons that traverse the interface, and a third grounding terminal. The energy and angular distribution of the injected electrons can be controlled by varying the tip potential. By using the characteristic data of the injected and collected electrons, many useful transport-related properties of the sample can be obtained. The silicon quantum dots (Si QDs) may be fabricated by taking advantage of the Stranski-Krastanov growth model. Germanium layer has been choosed as a barrier layer due to the large lattice mismatch between Si and Ge. The n-type Si","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128969795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609774
M. Zhao, Q. Jiang
The effect of melting temperature on Hall-Petch relationship has been studied. As grain size decreases, the melting temperature of the nano-structured crystals decreases, the Hall-Petch relationship is no longer sufficient. When the yield strength or hardness is taken as a function of reciprocal of the square root of the grain size, it has a numerical maximum whose location depends on the size of the bulk melting enthalpy of the crystals. Experimental results agree well with the modification induced by the size-dependence.
{"title":"Reverse Hall-Petch Relationship of Metals in Nanometer Size","authors":"M. Zhao, Q. Jiang","doi":"10.1109/NANOEL.2006.1609774","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609774","url":null,"abstract":"The effect of melting temperature on Hall-Petch relationship has been studied. As grain size decreases, the melting temperature of the nano-structured crystals decreases, the Hall-Petch relationship is no longer sufficient. When the yield strength or hardness is taken as a function of reciprocal of the square root of the grain size, it has a numerical maximum whose location depends on the size of the bulk melting enthalpy of the crystals. Experimental results agree well with the modification induced by the size-dependence.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121647900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609685
Z. Sun, T. Chen, Z.J. Zhang, L.L. Wang, S. Ni, Z. Cao, Y.W. Chen, P. Guo, Y. Sun, B. Tay
The development and commercialization of flat panel display and light source based on nanostructured thin films such as field emission display (FED) from carbon nanotubes, light emit diode (LED) from GaN-based thin film, is reviewed. The related thin film fabrication systems, FED prototypes and high-brightness white LED lamps have been demonstrated.
{"title":"From nanostructured thin films to photonic devices --development and commercialization","authors":"Z. Sun, T. Chen, Z.J. Zhang, L.L. Wang, S. Ni, Z. Cao, Y.W. Chen, P. Guo, Y. Sun, B. Tay","doi":"10.1109/NANOEL.2006.1609685","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609685","url":null,"abstract":"The development and commercialization of flat panel display and light source based on nanostructured thin films such as field emission display (FED) from carbon nanotubes, light emit diode (LED) from GaN-based thin film, is reviewed. The related thin film fabrication systems, FED prototypes and high-brightness white LED lamps have been demonstrated.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125362369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609691
N. Joshi, W. Springer
MEMS/NEMS are used to create micro-miniature mechanical devices primarily from silicon. MEMS/NEMS technology is used to build accelerometers in automobile airbags, pressure sensors, flow rate sensors etc. In microelectromechanical systems, the feature sizes are larger, less complex, and design rules are more relaxed compared to most Integrated Circuit (IC) fabrication technology. The comparison to the IC industry since most of the processes for MEMS/NEMS devices have been derived from IC technology. At this point, we think the line between MEMS and NEMS devices and systems is slightly unclear hence a generalized analysis.
{"title":"Dynamic Analysis for a MEMS/NEMS Based Device","authors":"N. Joshi, W. Springer","doi":"10.1109/NANOEL.2006.1609691","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609691","url":null,"abstract":"MEMS/NEMS are used to create micro-miniature mechanical devices primarily from silicon. MEMS/NEMS technology is used to build accelerometers in automobile airbags, pressure sensors, flow rate sensors etc. In microelectromechanical systems, the feature sizes are larger, less complex, and design rules are more relaxed compared to most Integrated Circuit (IC) fabrication technology. The comparison to the IC industry since most of the processes for MEMS/NEMS devices have been derived from IC technology. At this point, we think the line between MEMS and NEMS devices and systems is slightly unclear hence a generalized analysis.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128880853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609733
J. Hsu
The fundamental equation to describe condensed matter physics, quantum chemistry, or molecular biology is well known, which is no other than the Schrodinger equation, but it is in general too complicated to solve. The difficulty is often suggested as due to Coulomb interactions, leading to ingenious methods, for example, the density functional theory to model the electron-electron interaction, and the pseudopotential theory to model the electron-ion interaction. However, the electron-ion interaction relies on the one-body electron distribution, and the electron-electron interaction the two-body. It is shown that the electron kinetic energy cannot be reduced to few-body interactions from the many-body without incurring an error, since a particle in the many-body environment encounters more spatial bumpiness due to collisions with neighboring particles to thus jack up its kinetic energy. The correlation and coherence effect, the Slater's determinant, the virial theorem, effective and pseudo potentials, and their applications to simple atoms and molecules are discussed.
{"title":"Energy Principle of Atomic and Molecular Systems","authors":"J. Hsu","doi":"10.1109/NANOEL.2006.1609733","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609733","url":null,"abstract":"The fundamental equation to describe condensed matter physics, quantum chemistry, or molecular biology is well known, which is no other than the Schrodinger equation, but it is in general too complicated to solve. The difficulty is often suggested as due to Coulomb interactions, leading to ingenious methods, for example, the density functional theory to model the electron-electron interaction, and the pseudopotential theory to model the electron-ion interaction. However, the electron-ion interaction relies on the one-body electron distribution, and the electron-electron interaction the two-body. It is shown that the electron kinetic energy cannot be reduced to few-body interactions from the many-body without incurring an error, since a particle in the many-body environment encounters more spatial bumpiness due to collisions with neighboring particles to thus jack up its kinetic energy. The correlation and coherence effect, the Slater's determinant, the virial theorem, effective and pseudo potentials, and their applications to simple atoms and molecules are discussed.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127545526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609681
Q. Jiang, C.C. Yang
A simple model without adjustable parameters for size-dependent melting temperature of nanocrystals has been determined in terms of the size-dependent amplitude of the atomic thermal vibrations of nanocrystals according to Lindemann′s criterion on melting. The model predicts not only melting temperature depression for free-standing nanocrystals but also the melting temperature elevation for embedded nanocrystals in a matrix. The above model can be extended to predict the size dependence of the melting enthalpy and the cohesive energy of nanocrystals, the critical temperature for surface melting, the critical temperature for glass transition of polymers, and the critical temperatures of ferromagnetic, ferroelectric, and superconductor nanocrystals. It is found that the model predictions are in good agreement with the available experimental results.
{"title":"Size Effect on Phase Transition","authors":"Q. Jiang, C.C. Yang","doi":"10.1109/NANOEL.2006.1609681","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609681","url":null,"abstract":"A simple model without adjustable parameters for size-dependent melting temperature of nanocrystals has been determined in terms of the size-dependent amplitude of the atomic thermal vibrations of nanocrystals according to Lindemann′s criterion on melting. The model predicts not only melting temperature depression for free-standing nanocrystals but also the melting temperature elevation for embedded nanocrystals in a matrix. The above model can be extended to predict the size dependence of the melting enthalpy and the cohesive energy of nanocrystals, the critical temperature for surface melting, the critical temperature for glass transition of polymers, and the critical temperatures of ferromagnetic, ferroelectric, and superconductor nanocrystals. It is found that the model predictions are in good agreement with the available experimental results.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130231899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609705
Minghao Cheng, Yilong Lu
The fundamental understanding of friction phenomena at atomic level is important in the area of micro-electro-mechanical system and so on. However, the existing knowledges of friction are all based on the Newton mechanics theory and experiments on macroscale. In this paper, the friction between CNT and graphite surface is studied by using classical molecular dynamics simulation. The result shows an anisotropic behavior of friction between two structures, and the symmetry of the nanotube can be characterized by the variation of potential energy as well.
{"title":"Friction between Carbon Nanotube and Graphite using Molecular Dynamics","authors":"Minghao Cheng, Yilong Lu","doi":"10.1109/NANOEL.2006.1609705","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609705","url":null,"abstract":"The fundamental understanding of friction phenomena at atomic level is important in the area of micro-electro-mechanical system and so on. However, the existing knowledges of friction are all based on the Newton mechanics theory and experiments on macroscale. In this paper, the friction between CNT and graphite surface is studied by using classical molecular dynamics simulation. The result shows an anisotropic behavior of friction between two structures, and the symmetry of the nanotube can be characterized by the variation of potential energy as well.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121160577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609693
W. Lang, M. Marksteiner, M. Dineva, T. Enzenhofer, K. Siraj, M. Peruzzi, J. Pedarnig, D. Bauerle, R. Korntner, E. Cekan, E. Platzgummer, H. Loeschner
Ion-beam irradiation allows for a direct modification of the electric properties of high-temperature superconductors (HTS). Computer simulations of the ion-target interactions reveal that He+ions at energies above 60 keV do not implant into 100-nm thick films of YBa2Cu3O7but can create about one defect per unit cell at technically feasible ion doses of a few 1015cm-2. These point defects are primarily displacements of the oxygen atoms of YBa2Cu3O7. X-ray analysis and measurements of the electrical resistivity after cumulative ion irradiation confirm that the main building blocks of the crystal structure remain intact although the superconductor is converted to an insulator. Superconductive nanodevices can be fabricated with this method by directing a low-divergence beam of light ions at a thin film of HTS through a mask placed at a distance from the surface of the material. The illuminated areas of the film are converted from superconducting to semiconducting and even insulating in a single-step process.
{"title":"Ion-beam modification of high-temperature superconductor thin films for the fabrication of superconductive nanodevices","authors":"W. Lang, M. Marksteiner, M. Dineva, T. Enzenhofer, K. Siraj, M. Peruzzi, J. Pedarnig, D. Bauerle, R. Korntner, E. Cekan, E. Platzgummer, H. Loeschner","doi":"10.1109/NANOEL.2006.1609693","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609693","url":null,"abstract":"Ion-beam irradiation allows for a direct modification of the electric properties of high-temperature superconductors (HTS). Computer simulations of the ion-target interactions reveal that He+ions at energies above 60 keV do not implant into 100-nm thick films of YBa2Cu3O7but can create about one defect per unit cell at technically feasible ion doses of a few 1015cm-2. These point defects are primarily displacements of the oxygen atoms of YBa2Cu3O7. X-ray analysis and measurements of the electrical resistivity after cumulative ion irradiation confirm that the main building blocks of the crystal structure remain intact although the superconductor is converted to an insulator. Superconductive nanodevices can be fabricated with this method by directing a low-divergence beam of light ions at a thin film of HTS through a mask placed at a distance from the surface of the material. The illuminated areas of the film are converted from superconducting to semiconducting and even insulating in a single-step process.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126455084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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