{"title":"Piezoresistivity (with uniaxial strain) in nanocrystalline films of rare-earth manganites","authors":"J. Sarkar, A. Raychaudhuri","doi":"10.1109/NANOEL.2006.1609751","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609751","url":null,"abstract":"We present a study of the piezoresistivity in nanostructured polycrystalline films of La<inf>0.67</inf>Ca<inf>0.33</inf>MnO<inf>3</inf>and La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>grown on oxidized Si","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134215258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609702
P. Zhou, L. Deng, J.L. Xie, Y.Q. Liu
Microwave properties of Fe-based nanocrystalline alloy particles mainly depend on the crystal structure and particle morphology. It’s difficult to build up their relationship directly, so magnetic properties are introduced as intermediaries. In this paper, nanocrystalline Fe73.5Cu1Nb3Si13.5B7alloy powders were prepared and tested by the structural, magnetic and microwave measurement. It’s found that besides particle size, the structural properties such as grain size or lattice constant have important influence on the sample’s static magnetic properties, and such influence effectively extends to its complex permeability. Moreover, the exchange coupling and surface-effect were discussed in this issue.
{"title":"Microwave Properties of Fe-based Nanocrystalline Alloy Particles","authors":"P. Zhou, L. Deng, J.L. Xie, Y.Q. Liu","doi":"10.1109/NANOEL.2006.1609702","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609702","url":null,"abstract":"Microwave properties of Fe-based nanocrystalline alloy particles mainly depend on the crystal structure and particle morphology. It’s difficult to build up their relationship directly, so magnetic properties are introduced as intermediaries. In this paper, nanocrystalline Fe73.5Cu1Nb3Si13.5B7alloy powders were prepared and tested by the structural, magnetic and microwave measurement. It’s found that besides particle size, the structural properties such as grain size or lattice constant have important influence on the sample’s static magnetic properties, and such influence effectively extends to its complex permeability. Moreover, the exchange coupling and surface-effect were discussed in this issue.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134260350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609753
Zhiwei Zhao, L. Pan, B. Tay, Changqing Sun
Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.
{"title":"Growth and Characterization of Carbon Nanotubes on Porous Silicon","authors":"Zhiwei Zhao, L. Pan, B. Tay, Changqing Sun","doi":"10.1109/NANOEL.2006.1609753","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609753","url":null,"abstract":"Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122840324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609684
T. Su
Taiwan National Nanoscience & Nanotechnology Program started in 2003. The budget is about US$ 600 million for six years. Compared to some countries, this is not a big number. Our strategy is to focus on industrilization. 65% of the budget was for industrialization nanotechnology. Our National Program is an industrialization driven program. Stumbling blocks to commercializing nanotechnology and Taiwan strategic initiatives to industrializing nanotechnology will be described in this paper. The stumbling blocks will be analyzed in two different phases. The first one is from science to industry. The other one is from nanoproducts to users. Taiwan strategy initiatives including government commitment, positioning of different players and infrastructure built for nanotechnology will be discussed in this paper. To industrialize nanotechnology, linking nano novel properties to applications is essential. The first approach to be presented is novel material-driven approach, which is to derive application concepts from the unique properties of a novel material. Carbon nanocapsule and tetrapod-like zinc oxide will be used as examples to illustrate our experiences. The other approach is need-driven approach. To maintain competitiveness in some products, nanotechnology could be quite helpful. Several examples, including CNT-backlight unit (BLU) and nanoclay in PU synthetic leather will be described. Nanotechnology is a hot R& D area globally. Differentiation strategy is very important. Self-cleaning paint is cited as an example to be differentiated from others. Through nanotechnology development, we believe that our daily life will be improved dramatically.
{"title":"Commercialization of Nanotechnology - Taiwan Experiences","authors":"T. Su","doi":"10.1109/NANOEL.2006.1609684","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609684","url":null,"abstract":"Taiwan National Nanoscience & Nanotechnology Program started in 2003. The budget is about US$ 600 million for six years. Compared to some countries, this is not a big number. Our strategy is to focus on industrilization. 65% of the budget was for industrialization nanotechnology. Our National Program is an industrialization driven program. Stumbling blocks to commercializing nanotechnology and Taiwan strategic initiatives to industrializing nanotechnology will be described in this paper. The stumbling blocks will be analyzed in two different phases. The first one is from science to industry. The other one is from nanoproducts to users. Taiwan strategy initiatives including government commitment, positioning of different players and infrastructure built for nanotechnology will be discussed in this paper. To industrialize nanotechnology, linking nano novel properties to applications is essential. The first approach to be presented is novel material-driven approach, which is to derive application concepts from the unique properties of a novel material. Carbon nanocapsule and tetrapod-like zinc oxide will be used as examples to illustrate our experiences. The other approach is need-driven approach. To maintain competitiveness in some products, nanotechnology could be quite helpful. Several examples, including CNT-backlight unit (BLU) and nanoclay in PU synthetic leather will be described. Nanotechnology is a hot R& D area globally. Differentiation strategy is very important. Self-cleaning paint is cited as an example to be differentiated from others. Through nanotechnology development, we believe that our daily life will be improved dramatically.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129178904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609734
Y. Chen, C. Chien, K. Kin, J. Lou
The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND- and NOR-type stacked-gate flash memories, respectively.
{"title":"Programming Efficiency of Stacked-Gate Flash Memories with High-κ Dielectrics","authors":"Y. Chen, C. Chien, K. Kin, J. Lou","doi":"10.1109/NANOEL.2006.1609734","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609734","url":null,"abstract":"The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND- and NOR-type stacked-gate flash memories, respectively.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114580732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609720
T. Duong, H. N. Cheang, D. Ghista, A. Liu
A microfluidic chip which has the potential to rapidly detect malaria by detecting fluorescence-labelled parasites in red blood cells is proposed. The heart of this system is the electrokinetic manipulation of fluid to transport cells in microchannel. In this paper, the use of Micro Particle Image Velocimetry to characterise the electroosmotic flow in PDMS microchannel is reported. The effect of pressure-driven backflow is discussed and modifications of channel design to enhance pressure resistance were proposed and experimentally verified.
{"title":"Stable and High-Volume Electroosmotic Transport for Microfluidic Chip","authors":"T. Duong, H. N. Cheang, D. Ghista, A. Liu","doi":"10.1109/NANOEL.2006.1609720","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609720","url":null,"abstract":"A microfluidic chip which has the potential to rapidly detect malaria by detecting fluorescence-labelled parasites in red blood cells is proposed. The heart of this system is the electrokinetic manipulation of fluid to transport cells in microchannel. In this paper, the use of Micro Particle Image Velocimetry to characterise the electroosmotic flow in PDMS microchannel is reported. The effect of pressure-driven backflow is discussed and modifications of channel design to enhance pressure resistance were proposed and experimentally verified.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609710
L. Kunardi, Zheng Yi, C. Troadec, Ma Han Thu Lwin, W. Knoll, N. Chandrasekhar
We present studies on a Ag/ HS–(CH2)4–T3–H (T3C4SH)/ Au diode using nanometer scale resolution, ballistic electron emission microscopy (BEEM). Images show spatially non-uniform carrier injection. A WKB calculation is carried out and compared with the experimental data. The results indicate that molecular levels are being accessed in the BEEM experiment, since the measured currents are larger than purely tunneling contribution. Our results are consistent with previously published results on a similar molecule [ 1]. Physical origins of the non-uniform carrier injection and its implications are discussed.
{"title":"Ballistic electron microscopy of a metal molecule interface","authors":"L. Kunardi, Zheng Yi, C. Troadec, Ma Han Thu Lwin, W. Knoll, N. Chandrasekhar","doi":"10.1109/NANOEL.2006.1609710","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609710","url":null,"abstract":"We present studies on a Ag/ HS–(CH2)4–T3–H (T3C4SH)/ Au diode using nanometer scale resolution, ballistic electron emission microscopy (BEEM). Images show spatially non-uniform carrier injection. A WKB calculation is carried out and compared with the experimental data. The results indicate that molecular levels are being accessed in the BEEM experiment, since the measured currents are larger than purely tunneling contribution. Our results are consistent with previously published results on a similar molecule [ 1]. Physical origins of the non-uniform carrier injection and its implications are discussed.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128883397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609736
M.Z. Islam, S. M. Mominuzzaman
A heterostructure, fabricated by depositing phosphorus (P) doped carbon thin film, thickness of which is about 200 nm, on boron doped crystalline silicon (Si) substrate by pulsed laser deposition (PLD) technique, is studied in terms of its opto-electronic characteristics. Optical transmittance-reflectance measurements, temperature dependent conductivity data and the current density-voltage (J-V) characteristics of the heterostructure are analyzed to estimate device parameters, such as built-in potential, reverse saturation current density, intrinsic carrier concentration and donor concentration in the carbon side of the device for different P content in the target material for carbon. The estimated device parameters are seen to improve with the increase in P content in the target for up to 5% of P. But for 7% of P in the target, the device performance deteriorates. Using these device parameters, capacitance-voltage (C-V) characteristics of the device is simulated. The results are then compared with the experimentally obtained C-V characteristics. The detailed analyses suggests diffusion of P atoms from the film into the Si region during the film deposition by pulsed laser ablation and thus the formation of a P-I-N device rather than a simple P-N junction device. The width of the I region and diffusion co-efficient of P into the Si are estimated and the values are found to be in the acceptable range.
采用脉冲激光沉积(PLD)技术在掺硼晶体硅(Si)衬底上沉积了厚度约200 nm的掺磷碳薄膜，研究了其光电特性。通过光学透射-反射率测量、温度相关电导率数据和异质结构的电流密度-电压(J-V)特性进行分析，以估计器件参数，如内置电位、反向饱和电流密度、器件碳侧的本征载流子浓度和给体浓度等。随着目标中磷含量的增加，估计的设备参数得到改善，但当目标中磷含量达到7%时，设备性能就会恶化。利用这些器件参数，模拟了器件的电容-电压特性。然后将结果与实验得到的C-V特性进行了比较。详细分析表明，在脉冲激光烧蚀沉积过程中，P原子从薄膜扩散到Si区，从而形成了P- i - n器件，而不是简单的P- n结器件。估计了I区的宽度和P向Si的扩散系数，发现这些值在可接受的范围内。
{"title":"Estimation of Device Parameters and C-V Modeling of Pulsed Laser Deposited Phosphorus Doped Carbon/p-Silicon Heterostructure","authors":"M.Z. Islam, S. M. Mominuzzaman","doi":"10.1109/NANOEL.2006.1609736","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609736","url":null,"abstract":"A heterostructure, fabricated by depositing phosphorus (P) doped carbon thin film, thickness of which is about 200 nm, on boron doped crystalline silicon (Si) substrate by pulsed laser deposition (PLD) technique, is studied in terms of its opto-electronic characteristics. Optical transmittance-reflectance measurements, temperature dependent conductivity data and the current density-voltage (J-V) characteristics of the heterostructure are analyzed to estimate device parameters, such as built-in potential, reverse saturation current density, intrinsic carrier concentration and donor concentration in the carbon side of the device for different P content in the target material for carbon. The estimated device parameters are seen to improve with the increase in P content in the target for up to 5% of P. But for 7% of P in the target, the device performance deteriorates. Using these device parameters, capacitance-voltage (C-V) characteristics of the device is simulated. The results are then compared with the experimentally obtained C-V characteristics. The detailed analyses suggests diffusion of P atoms from the film into the Si region during the film deposition by pulsed laser ablation and thus the formation of a P-I-N device rather than a simple P-N junction device. The width of the I region and diffusion co-efficient of P into the Si are estimated and the values are found to be in the acceptable range.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116818172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609715
Ching-Jui Shih, Nai-Hao Kuo, Hung-Hsin Tsai, Wei-Chih Lin, C. Lieu
The object of this paper is that the immobilization technology for antibodies onto silicon-based chip. The active site of an IgG, the paratope, in many cases does not interact with the solid matrix and is, therefore, available for antibody-antigen complex formation. Due to △S > 0, the spontaneity activation of the Sulfur-Au bond is successfully forming and the target protein binding region was chemically modified to introduce aldehyde group. We also demonstrated the more linkers, the more antibodies onto the surface. And than we use fluorescence substrate, Rodamine, conjugate the antibodies in order to observe the amount of antiboies. In our studies, we also demanded that our methodology is still good to antibodies immobilization without any impair the antibodies. Although there is still non-specific binding of Ab on the modify chip, we can observe the antibodies (Green flourescence) on the measure of areas which is the metal, Au deposited on modify chip.
{"title":"Identification and rapid screen based on immune sensor","authors":"Ching-Jui Shih, Nai-Hao Kuo, Hung-Hsin Tsai, Wei-Chih Lin, C. Lieu","doi":"10.1109/NANOEL.2006.1609715","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609715","url":null,"abstract":"The object of this paper is that the immobilization technology for antibodies onto silicon-based chip. The active site of an IgG, the paratope, in many cases does not interact with the solid matrix and is, therefore, available for antibody-antigen complex formation. Due to △S > 0, the spontaneity activation of the Sulfur-Au bond is successfully forming and the target protein binding region was chemically modified to introduce aldehyde group. We also demonstrated the more linkers, the more antibodies onto the surface. And than we use fluorescence substrate, Rodamine, conjugate the antibodies in order to observe the amount of antiboies. In our studies, we also demanded that our methodology is still good to antibodies immobilization without any impair the antibodies. Although there is still non-specific binding of Ab on the modify chip, we can observe the antibodies (Green flourescence) on the measure of areas which is the metal, Au deposited on modify chip.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114628033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609728
Y.K. Lu, W. Zhu, Y. Zhang, H. Lu, R. Gopalkrishnan
High-k hafnium oxide thin films with equivalent of thickness (EOT) to SiO2of about 1 – 2 nm were deposited on p-type
在p型表面沉积了厚度约为1 ~ 2 nm的高钾氧化铪薄膜
{"title":"HfO2Nano-thin Films Grown by Laser MBE for Gate Dielectric Application","authors":"Y.K. Lu, W. Zhu, Y. Zhang, H. Lu, R. Gopalkrishnan","doi":"10.1109/NANOEL.2006.1609728","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609728","url":null,"abstract":"High-k hafnium oxide thin films with equivalent of thickness (EOT) to SiO<inf>2</inf>of about 1 – 2 nm were deposited on p-type","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131883499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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