Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609738
W. Nam, S. Joshi, S. Fonash
A new variant of our “grow-in-place” methodology termed “step-and-grow” is used to produce polyaniline nanowires. Three different widths (5μm, 1μm, and 0.5μm) of nanowires were grown for this demonstration. These “step-and-grow” polyaniline nanowires showed conductivities of ~10 S/cm.
{"title":"A STEP-and-GROW Technique – An Economic and Environmentally Safe Manufacturing Approach for Fabricating Ordered Nano Structures","authors":"W. Nam, S. Joshi, S. Fonash","doi":"10.1109/NANOEL.2006.1609738","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609738","url":null,"abstract":"A new variant of our “grow-in-place” methodology termed “step-and-grow” is used to produce polyaniline nanowires. Three different widths (5μm, 1μm, and 0.5μm) of nanowires were grown for this demonstration. These “step-and-grow” polyaniline nanowires showed conductivities of ~10 S/cm.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"70 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120906604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609687
H. Pozidis, P. Bachtold, J. Bonan, G. Cherubini, E. Eleftheriou, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, C. Hagleitner, D. Jubin, A. Knoll, M. Lantz, A. Pantazi, H. Rothuizen, A. Sebastian, R. Stutz, D. Wiesmann
Micro-electro-mechanical-system (MEMS)-based scanning-probe data storage devices are emerging as ultra-high-density, low-access-time, and low-power alternatives to conventional data storage. The probe-storage technique explored at IBM utilizes AFM probes and thermomechanical means to store and retrieve information in thin polymer films. High data rates are achieved by parallel operation of large 2D arrays with thousands of micro/nanomechanical cantilevers/tips that can be batch-fabricated by silicon surface micromachining techniques. The very high precision required to navigate the probe-tips over the storage medium is achieved by MEMS-based x/y actuators that position the large arrays of probe tips for parallel write/read/erase operations. For thermomechanical scanning-probe storage the polymer medium plays a crucial role. Based on a systematic study of different polymers it has been identified that the glass-transition temperature is the most important property that needs to be controlled for indentation writing and erasing at very narrow spacing. A prototype system demonstrating all the basic functions of a storage device based on scanning probes has been built and its main building blocks will be described in this paper. The inherent parallelism, the ultrahigh areal densities and the small form factor that probe storage techniques offer may open up new perspectives and opportunities for application in areas beyond those envisaged today.
{"title":"Scanning Probes Entering Data Storage: From Promise to Reality","authors":"H. Pozidis, P. Bachtold, J. Bonan, G. Cherubini, E. Eleftheriou, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, C. Hagleitner, D. Jubin, A. Knoll, M. Lantz, A. Pantazi, H. Rothuizen, A. Sebastian, R. Stutz, D. Wiesmann","doi":"10.1109/NANOEL.2006.1609687","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609687","url":null,"abstract":"Micro-electro-mechanical-system (MEMS)-based scanning-probe data storage devices are emerging as ultra-high-density, low-access-time, and low-power alternatives to conventional data storage. The probe-storage technique explored at IBM utilizes AFM probes and thermomechanical means to store and retrieve information in thin polymer films. High data rates are achieved by parallel operation of large 2D arrays with thousands of micro/nanomechanical cantilevers/tips that can be batch-fabricated by silicon surface micromachining techniques. The very high precision required to navigate the probe-tips over the storage medium is achieved by MEMS-based x/y actuators that position the large arrays of probe tips for parallel write/read/erase operations. For thermomechanical scanning-probe storage the polymer medium plays a crucial role. Based on a systematic study of different polymers it has been identified that the glass-transition temperature is the most important property that needs to be controlled for indentation writing and erasing at very narrow spacing. A prototype system demonstrating all the basic functions of a storage device based on scanning probes has been built and its main building blocks will be described in this paper. The inherent parallelism, the ultrahigh areal densities and the small form factor that probe storage techniques offer may open up new perspectives and opportunities for application in areas beyond those envisaged today.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122974489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609722
R. Lin, Jen‐Chih Li, T. Nee
To increase the external quantum efficiency of LED while limiting its forward voltage (Vf), we prepared both (AlxGa1–x)0.5In0.5P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs/GaAs distributed Bragg reflectors (DBRs). The wet oxidation process forms a stable AlxO material that acts as an insulation layer that affects both the carrier and optical confinements. The stable AlxO material that formed confined the transport region of injection carriers effectively and strongly decreased the chance of the carrier being trapped within the surface layer. To determine the trade-off conditions for LED oxidation, we used the Taguchi method which is a robust technique that is often used to analyze the significant trends that occur under a set of oxidation condition. In this study we uses an L9orthogonal array to measure the effects that a series of factors have upon the maximum brightness performance of the LED in an effort to limit the values of Vf. Relative to the as-grown LED, the oxidized LED that was treated under the trade-off wet-oxidation conditions displayed a sharply enhance the brightness (62.4% increase) in conjunction with only a slightly increased value of Vf(only a 24.5% increase).
{"title":"Brightness Improvement and limited Forward Voltage of the AlGaInP MQW LED with Wet-Oxidation by Taguchi Method","authors":"R. Lin, Jen‐Chih Li, T. Nee","doi":"10.1109/NANOEL.2006.1609722","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609722","url":null,"abstract":"To increase the external quantum efficiency of LED while limiting its forward voltage (Vf), we prepared both (AlxGa1–x)0.5In0.5P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs/GaAs distributed Bragg reflectors (DBRs). The wet oxidation process forms a stable AlxO material that acts as an insulation layer that affects both the carrier and optical confinements. The stable AlxO material that formed confined the transport region of injection carriers effectively and strongly decreased the chance of the carrier being trapped within the surface layer. To determine the trade-off conditions for LED oxidation, we used the Taguchi method which is a robust technique that is often used to analyze the significant trends that occur under a set of oxidation condition. In this study we uses an L9orthogonal array to measure the effects that a series of factors have upon the maximum brightness performance of the LED in an effort to limit the values of Vf. Relative to the as-grown LED, the oxidized LED that was treated under the trade-off wet-oxidation conditions displayed a sharply enhance the brightness (62.4% increase) in conjunction with only a slightly increased value of Vf(only a 24.5% increase).","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129282374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609740
B. Casse, H. Moser, M. Bahou, L. Jian, P. Gu
Arrays of gold Rod-Split-Ring-Resonators with structural details down to sub 100 nm, and exhibiting electromagnetic metamaterial (EM3) behavior near telecommunications frequencies, have been produced by nanofabrication. Samples were characterized at the Singapore Synchrotron Light Source ISMI (Infrared Spectro/MIcroscopy) facility using Bruker Optics’ IFS 66v/S Fourier transform interferometer and Hyperion 2000 Microscope powered by synchrotron radiation. Oblique incidence transmission spectra were measured and revealed a spectral resonance around 190 THz. The present work extends the frequency range in which EM3are available, thereby opening up opportunities for new applications in the telecommunications frequency regime.
{"title":"NanoElectromagnetic Metamaterials Approaching Telecommunications Frequencies","authors":"B. Casse, H. Moser, M. Bahou, L. Jian, P. Gu","doi":"10.1109/NANOEL.2006.1609740","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609740","url":null,"abstract":"Arrays of gold Rod-Split-Ring-Resonators with structural details down to sub 100 nm, and exhibiting electromagnetic metamaterial (EM3) behavior near telecommunications frequencies, have been produced by nanofabrication. Samples were characterized at the Singapore Synchrotron Light Source ISMI (Infrared Spectro/MIcroscopy) facility using Bruker Optics’ IFS 66v/S Fourier transform interferometer and Hyperion 2000 Microscope powered by synchrotron radiation. Oblique incidence transmission spectra were measured and revealed a spectral resonance around 190 THz. The present work extends the frequency range in which EM3are available, thereby opening up opportunities for new applications in the telecommunications frequency regime.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128601221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609764
Lei Zhao, J. Lian, Yu-Hua Liu, Q. Jiang
Nanostructured ZnO thin films have been prepared on quartz glass substrates. The structure and optical properties of ZnO films is investigated systematically using X-ray diffraction, Field emission scan electron microscope (FESEM), and room temperature photoluminescence (PL). Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus using metallic zinc as targets. One is high temperature (500oC~ 700oC) oxidation of the metallic Zinc film that obtained by pulsed laser deposition. The room temperature PL spectrum of the ZnO films shows that single violet luminescence emission centering on 424nm (or 2.90eV) without any accompanying deep-level emission and UV emission films was obtained. The violet emission was attributed to interstitial zinc in the films. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature (100oC~ 250oC). Nanostructured ZnO film with c-axis
{"title":"Structural and optical properties of nanostructured ZnO thin films deposited on quartz glass","authors":"Lei Zhao, J. Lian, Yu-Hua Liu, Q. Jiang","doi":"10.1109/NANOEL.2006.1609764","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609764","url":null,"abstract":"Nanostructured ZnO thin films have been prepared on quartz glass substrates. The structure and optical properties of ZnO films is investigated systematically using X-ray diffraction, Field emission scan electron microscope (FESEM), and room temperature photoluminescence (PL). Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus using metallic zinc as targets. One is high temperature (500oC~ 700oC) oxidation of the metallic Zinc film that obtained by pulsed laser deposition. The room temperature PL spectrum of the ZnO films shows that single violet luminescence emission centering on 424nm (or 2.90eV) without any accompanying deep-level emission and UV emission films was obtained. The violet emission was attributed to interstitial zinc in the films. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature (100oC~ 250oC). Nanostructured ZnO film with c-axis","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126498751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-10DOI: 10.1109/NANOEL.2006.1609771
S. Das, P. Sreeram, A. Raychaudhuri, T. Sai, L. Brar
We present an experimental investigation of the variation of the amplitude of vibrating microcantilever, as a function of distance (h) between the microcantilever and the sample in a Dynamic Force Microscopy (DFM) and explain the observations with a theoretical model. In DFM, as the cantilever tip approaches the sample, neither the force nor the response of the cantilever is in the linear regime. We present an exact numerical solution to the equation of motion of the oscillations of the microcantilever and present a quantitative explanation to the observed force versus distance curves, in terms of the resonance curves. We show that the change in the resonance frequency of the cantilever due to the atomic forces is highly nonlinear.
{"title":"Non-Contact Dynamic Mode Atomic Force Microscope : Effects of nonlinear atomic forces","authors":"S. Das, P. Sreeram, A. Raychaudhuri, T. Sai, L. Brar","doi":"10.1109/NANOEL.2006.1609771","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609771","url":null,"abstract":"We present an experimental investigation of the variation of the amplitude of vibrating microcantilever, as a function of distance (h) between the microcantilever and the sample in a Dynamic Force Microscopy (DFM) and explain the observations with a theoretical model. In DFM, as the cantilever tip approaches the sample, neither the force nor the response of the cantilever is in the linear regime. We present an exact numerical solution to the equation of motion of the oscillations of the microcantilever and present a quantitative explanation to the observed force versus distance curves, in terms of the resonance curves. We show that the change in the resonance frequency of the cantilever due to the atomic forces is highly nonlinear.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115845288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/nanoel.2006.1609698
S.S. Yu, W. Zheng, Q. Wen, B. Zheng, H. Tian
We present systematic calculations for the single-walled zigzag (n, 0) carbon nanotubes containing the substitutional impurity atom B/N using the ab initio density-functional theory. It is found that the formation energies of the single-walled zigzag carbon nanotubes with substitutional impurity atom B/N depend on the tube diameters as well as the electric properties, and show periodic features. The nature of these periodic features has been revealed, which results from the different bonding structures of the perfect zigzag carbon tubes with different diameters, rather than the defects (substitutional impurity atom B/N) in the zigzag tubes.
{"title":"Nature of substitutional impurity atom B/N in zigzag single-wall carbon nanotubes revealed by first principle calculations","authors":"S.S. Yu, W. Zheng, Q. Wen, B. Zheng, H. Tian","doi":"10.1109/nanoel.2006.1609698","DOIUrl":"https://doi.org/10.1109/nanoel.2006.1609698","url":null,"abstract":"We present systematic calculations for the single-walled zigzag (n, 0) carbon nanotubes containing the substitutional impurity atom B/N using the ab initio density-functional theory. It is found that the formation energies of the single-walled zigzag carbon nanotubes with substitutional impurity atom B/N depend on the tube diameters as well as the electric properties, and show periodic features. The nature of these periodic features has been revealed, which results from the different bonding structures of the perfect zigzag carbon tubes with different diameters, rather than the defects (substitutional impurity atom B/N) in the zigzag tubes.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/nanoel.2006.1609758
Y. Gan, Chang Ming Li
In this paper we report on thin film transistors based on poly(3-hexylthiophene) (P3HT) and carbon nanotubes (CNTs) composite active materials. Single walled CNTs were dispersed into P3HT chloroform solution. By drop casting, the composite solution was deposited onto the pre-fabricated device and formed thin active layer. The effect of different concentrations of CNTs to the charge carrier mobility of the composite was studied. Very little amount of CNT added into the active material can improve the carrier mobility while the on/off ratio is not reduced.
{"title":"Organic Thin-Film Transistors Based On Conjugated Polymer and Carbon Nanotube Composites","authors":"Y. Gan, Chang Ming Li","doi":"10.1109/nanoel.2006.1609758","DOIUrl":"https://doi.org/10.1109/nanoel.2006.1609758","url":null,"abstract":"In this paper we report on thin film transistors based on poly(3-hexylthiophene) (P3HT) and carbon nanotubes (CNTs) composite active materials. Single walled CNTs were dispersed into P3HT chloroform solution. By drop casting, the composite solution was deposited onto the pre-fabricated device and formed thin active layer. The effect of different concentrations of CNTs to the charge carrier mobility of the composite was studied. Very little amount of CNT added into the active material can improve the carrier mobility while the on/off ratio is not reduced.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122752457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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