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2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献

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A STEP-and-GROW Technique – An Economic and Environmentally Safe Manufacturing Approach for Fabricating Ordered Nano Structures 一步一步成长技术–一种经济环保的有序纳米结构制造方法
Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609738
W. Nam, S. Joshi, S. Fonash
A new variant of our “grow-in-place” methodology termed “step-and-grow” is used to produce polyaniline nanowires. Three different widths (5μm, 1μm, and 0.5μm) of nanowires were grown for this demonstration. These “step-and-grow” polyaniline nanowires showed conductivities of ~10 S/cm.
我们的“原地生长”方法的一种新变体被称为“阶梯生长”,用于生产聚苯胺纳米线。为了演示,我们生长了三种不同宽度(5μm, 1μm和0.5μm)的纳米线。这些“阶梯生长”的聚苯胺纳米线的电导率为~10 S/cm。
{"title":"A STEP-and-GROW Technique – An Economic and Environmentally Safe Manufacturing Approach for Fabricating Ordered Nano Structures","authors":"W. Nam, S. Joshi, S. Fonash","doi":"10.1109/NANOEL.2006.1609738","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609738","url":null,"abstract":"A new variant of our “grow-in-place” methodology termed “step-and-grow” is used to produce polyaniline nanowires. Three different widths (5μm, 1μm, and 0.5μm) of nanowires were grown for this demonstration. These “step-and-grow” polyaniline nanowires showed conductivities of ~10 S/cm.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"70 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120906604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scanning Probes Entering Data Storage: From Promise to Reality 扫描探针进入数据存储:从承诺到现实
Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609687
H. Pozidis, P. Bachtold, J. Bonan, G. Cherubini, E. Eleftheriou, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, C. Hagleitner, D. Jubin, A. Knoll, M. Lantz, A. Pantazi, H. Rothuizen, A. Sebastian, R. Stutz, D. Wiesmann
Micro-electro-mechanical-system (MEMS)-based scanning-probe data storage devices are emerging as ultra-high-density, low-access-time, and low-power alternatives to conventional data storage. The probe-storage technique explored at IBM utilizes AFM probes and thermomechanical means to store and retrieve information in thin polymer films. High data rates are achieved by parallel operation of large 2D arrays with thousands of micro/nanomechanical cantilevers/tips that can be batch-fabricated by silicon surface micromachining techniques. The very high precision required to navigate the probe-tips over the storage medium is achieved by MEMS-based x/y actuators that position the large arrays of probe tips for parallel write/read/erase operations. For thermomechanical scanning-probe storage the polymer medium plays a crucial role. Based on a systematic study of different polymers it has been identified that the glass-transition temperature is the most important property that needs to be controlled for indentation writing and erasing at very narrow spacing. A prototype system demonstrating all the basic functions of a storage device based on scanning probes has been built and its main building blocks will be described in this paper. The inherent parallelism, the ultrahigh areal densities and the small form factor that probe storage techniques offer may open up new perspectives and opportunities for application in areas beyond those envisaged today.
基于微机电系统(MEMS)的扫描探针数据存储设备正以超高密度、低访问时间和低功耗的优势取代传统的数据存储设备。IBM探索的探针存储技术利用AFM探针和热机械手段在薄聚合物薄膜中存储和检索信息。采用硅表面微加工技术批量制造的具有数千个微/纳米机械悬臂/尖端的大型二维阵列的并行操作可以实现高数据速率。通过基于mems的x/y致动器实现了在存储介质上导航探针尖端所需的非常高的精度,该致动器定位大型探针尖端阵列以进行并行写/读/擦除操作。对于热机械扫描探针的存储,聚合物介质起着至关重要的作用。通过对不同聚合物的系统研究,确定了玻璃化转变温度是在非常窄的间距下进行压痕书写和擦除需要控制的最重要的性质。本文建立了一个原型系统,演示了基于扫描探头的存储设备的所有基本功能,并对其主要组成部分进行了描述。探针存储技术固有的并行性、超高的面密度和小的外形因素可能会为超出今天设想的领域的应用开辟新的前景和机会。
{"title":"Scanning Probes Entering Data Storage: From Promise to Reality","authors":"H. Pozidis, P. Bachtold, J. Bonan, G. Cherubini, E. Eleftheriou, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, C. Hagleitner, D. Jubin, A. Knoll, M. Lantz, A. Pantazi, H. Rothuizen, A. Sebastian, R. Stutz, D. Wiesmann","doi":"10.1109/NANOEL.2006.1609687","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609687","url":null,"abstract":"Micro-electro-mechanical-system (MEMS)-based scanning-probe data storage devices are emerging as ultra-high-density, low-access-time, and low-power alternatives to conventional data storage. The probe-storage technique explored at IBM utilizes AFM probes and thermomechanical means to store and retrieve information in thin polymer films. High data rates are achieved by parallel operation of large 2D arrays with thousands of micro/nanomechanical cantilevers/tips that can be batch-fabricated by silicon surface micromachining techniques. The very high precision required to navigate the probe-tips over the storage medium is achieved by MEMS-based x/y actuators that position the large arrays of probe tips for parallel write/read/erase operations. For thermomechanical scanning-probe storage the polymer medium plays a crucial role. Based on a systematic study of different polymers it has been identified that the glass-transition temperature is the most important property that needs to be controlled for indentation writing and erasing at very narrow spacing. A prototype system demonstrating all the basic functions of a storage device based on scanning probes has been built and its main building blocks will be described in this paper. The inherent parallelism, the ultrahigh areal densities and the small form factor that probe storage techniques offer may open up new perspectives and opportunities for application in areas beyond those envisaged today.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122974489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Brightness Improvement and limited Forward Voltage of the AlGaInP MQW LED with Wet-Oxidation by Taguchi Method 田口湿氧化法提高AlGaInP MQW LED亮度和限制正向电压
Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609722
R. Lin, Jen‐Chih Li, T. Nee
To increase the external quantum efficiency of LED while limiting its forward voltage (Vf), we prepared both (AlxGa1–x)0.5In0.5P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs/GaAs distributed Bragg reflectors (DBRs). The wet oxidation process forms a stable AlxO material that acts as an insulation layer that affects both the carrier and optical confinements. The stable AlxO material that formed confined the transport region of injection carriers effectively and strongly decreased the chance of the carrier being trapped within the surface layer. To determine the trade-off conditions for LED oxidation, we used the Taguchi method which is a robust technique that is often used to analyze the significant trends that occur under a set of oxidation condition. In this study we uses an L9orthogonal array to measure the effects that a series of factors have upon the maximum brightness performance of the LED in an effort to limit the values of Vf. Relative to the as-grown LED, the oxidized LED that was treated under the trade-off wet-oxidation conditions displayed a sharply enhance the brightness (62.4% increase) in conjunction with only a slightly increased value of Vf(only a 24.5% increase).
为了提高LED的外量子效率,同时限制其正向电压(Vf),我们通过选择性湿氧化AlAs/GaAs分布式Bragg反射器(DBRs)的AlAs层来制备(AlxGa1-x)0.5In0.5P LED和埋藏氧化物。湿氧化过程形成稳定的AlxO材料,作为绝缘层,影响载流子和光限制。形成的稳定的AlxO材料有效地限制了注入载流子的输运区域,有力地降低了载流子被困在表层的机会。为了确定LED氧化的权衡条件,我们使用了田口方法,这是一种强大的技术,通常用于分析在一组氧化条件下发生的重要趋势。在本研究中,我们使用l9正交阵列来测量一系列因素对LED最大亮度性能的影响,以限制Vf的值。相对于生长的LED,在湿氧化交换条件下处理的氧化LED显示出亮度急剧增强(增加62.4%),而Vf值仅略有增加(仅增加24.5%)。
{"title":"Brightness Improvement and limited Forward Voltage of the AlGaInP MQW LED with Wet-Oxidation by Taguchi Method","authors":"R. Lin, Jen‐Chih Li, T. Nee","doi":"10.1109/NANOEL.2006.1609722","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609722","url":null,"abstract":"To increase the external quantum efficiency of LED while limiting its forward voltage (Vf), we prepared both (AlxGa1–x)0.5In0.5P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs/GaAs distributed Bragg reflectors (DBRs). The wet oxidation process forms a stable AlxO material that acts as an insulation layer that affects both the carrier and optical confinements. The stable AlxO material that formed confined the transport region of injection carriers effectively and strongly decreased the chance of the carrier being trapped within the surface layer. To determine the trade-off conditions for LED oxidation, we used the Taguchi method which is a robust technique that is often used to analyze the significant trends that occur under a set of oxidation condition. In this study we uses an L9orthogonal array to measure the effects that a series of factors have upon the maximum brightness performance of the LED in an effort to limit the values of Vf. Relative to the as-grown LED, the oxidized LED that was treated under the trade-off wet-oxidation conditions displayed a sharply enhance the brightness (62.4% increase) in conjunction with only a slightly increased value of Vf(only a 24.5% increase).","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129282374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
NanoElectromagnetic Metamaterials Approaching Telecommunications Frequencies 接近电信频率的纳米电磁超材料
Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609740
B. Casse, H. Moser, M. Bahou, L. Jian, P. Gu
Arrays of gold Rod-Split-Ring-Resonators with structural details down to sub 100 nm, and exhibiting electromagnetic metamaterial (EM3) behavior near telecommunications frequencies, have been produced by nanofabrication. Samples were characterized at the Singapore Synchrotron Light Source ISMI (Infrared Spectro/MIcroscopy) facility using Bruker Optics’ IFS 66v/S Fourier transform interferometer and Hyperion 2000 Microscope powered by synchrotron radiation. Oblique incidence transmission spectra were measured and revealed a spectral resonance around 190 THz. The present work extends the frequency range in which EM3are available, thereby opening up opportunities for new applications in the telecommunications frequency regime.
用纳米技术制造出了结构细节低至100纳米的金棒-分裂环谐振器阵列,并在电信频率附近表现出电磁超材料(EM3)行为。样品在新加坡同步加速器光源ISMI(红外光谱/显微镜)设备上使用布鲁克光学公司的IFS 66v/S傅立叶变换干涉仪和同步辐射驱动的Hyperion 2000显微镜进行表征。斜入射透射光谱在190thz附近出现了光谱共振。目前的工作扩大了em3可用的频率范围,从而为电信频率制度的新应用开辟了机会。
{"title":"NanoElectromagnetic Metamaterials Approaching Telecommunications Frequencies","authors":"B. Casse, H. Moser, M. Bahou, L. Jian, P. Gu","doi":"10.1109/NANOEL.2006.1609740","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609740","url":null,"abstract":"Arrays of gold Rod-Split-Ring-Resonators with structural details down to sub 100 nm, and exhibiting electromagnetic metamaterial (EM3) behavior near telecommunications frequencies, have been produced by nanofabrication. Samples were characterized at the Singapore Synchrotron Light Source ISMI (Infrared Spectro/MIcroscopy) facility using Bruker Optics’ IFS 66v/S Fourier transform interferometer and Hyperion 2000 Microscope powered by synchrotron radiation. Oblique incidence transmission spectra were measured and revealed a spectral resonance around 190 THz. The present work extends the frequency range in which EM3are available, thereby opening up opportunities for new applications in the telecommunications frequency regime.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128601221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Structural and optical properties of nanostructured ZnO thin films deposited on quartz glass 石英玻璃上纳米ZnO薄膜的结构和光学性质
Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609764
Lei Zhao, J. Lian, Yu-Hua Liu, Q. Jiang
Nanostructured ZnO thin films have been prepared on quartz glass substrates. The structure and optical properties of ZnO films is investigated systematically using X-ray diffraction, Field emission scan electron microscope (FESEM), and room temperature photoluminescence (PL). Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus using metallic zinc as targets. One is high temperature (500oC~ 700oC) oxidation of the metallic Zinc film that obtained by pulsed laser deposition. The room temperature PL spectrum of the ZnO films shows that single violet luminescence emission centering on 424nm (or 2.90eV) without any accompanying deep-level emission and UV emission films was obtained. The violet emission was attributed to interstitial zinc in the films. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature (100oC~ 250oC). Nanostructured ZnO film with c-axis
在石英玻璃衬底上制备了纳米结构ZnO薄膜。采用x射线衍射、场发射扫描电镜(FESEM)和室温光致发光(PL)等方法对ZnO薄膜的结构和光学性能进行了系统的研究。采用两种方法在传统脉冲激光沉积装置中以金属锌为靶制备ZnO薄膜。一是采用脉冲激光沉积法对金属锌膜进行高温(500℃~ 700℃)氧化。ZnO薄膜的室温PL光谱显示,ZnO薄膜以424nm (2.90eV)为中心产生单紫外光发光,没有伴随的深能级发射和紫外发射膜。紫色的发射是由于薄膜中锌的间隙造成的。另一种是低温(100℃~ 250℃)氧气气氛下脉冲激光烧蚀Zn靶。具有c轴结构的纳米ZnO薄膜
{"title":"Structural and optical properties of nanostructured ZnO thin films deposited on quartz glass","authors":"Lei Zhao, J. Lian, Yu-Hua Liu, Q. Jiang","doi":"10.1109/NANOEL.2006.1609764","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609764","url":null,"abstract":"Nanostructured ZnO thin films have been prepared on quartz glass substrates. The structure and optical properties of ZnO films is investigated systematically using X-ray diffraction, Field emission scan electron microscope (FESEM), and room temperature photoluminescence (PL). Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus using metallic zinc as targets. One is high temperature (500oC~ 700oC) oxidation of the metallic Zinc film that obtained by pulsed laser deposition. The room temperature PL spectrum of the ZnO films shows that single violet luminescence emission centering on 424nm (or 2.90eV) without any accompanying deep-level emission and UV emission films was obtained. The violet emission was attributed to interstitial zinc in the films. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature (100oC~ 250oC). Nanostructured ZnO film with c-axis","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126498751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Non-Contact Dynamic Mode Atomic Force Microscope : Effects of nonlinear atomic forces 非接触动态模式原子力显微镜:非线性原子力的影响
Pub Date : 2006-01-10 DOI: 10.1109/NANOEL.2006.1609771
S. Das, P. Sreeram, A. Raychaudhuri, T. Sai, L. Brar
We present an experimental investigation of the variation of the amplitude of vibrating microcantilever, as a function of distance (h) between the microcantilever and the sample in a Dynamic Force Microscopy (DFM) and explain the observations with a theoretical model. In DFM, as the cantilever tip approaches the sample, neither the force nor the response of the cantilever is in the linear regime. We present an exact numerical solution to the equation of motion of the oscillations of the microcantilever and present a quantitative explanation to the observed force versus distance curves, in terms of the resonance curves. We show that the change in the resonance frequency of the cantilever due to the atomic forces is highly nonlinear.
我们在动态力显微镜(DFM)中对微悬臂梁振动振幅的变化进行了实验研究,作为微悬臂梁与样品之间距离(h)的函数,并用理论模型解释了观察结果。在DFM中,当悬臂梁尖端靠近试样时,悬臂梁的力和响应都不处于线性状态。我们提出了微悬臂梁振荡运动方程的精确数值解,并根据共振曲线对观察到的力与距离曲线进行了定量解释。结果表明,原子力对悬臂梁谐振频率的影响是高度非线性的。
{"title":"Non-Contact Dynamic Mode Atomic Force Microscope : Effects of nonlinear atomic forces","authors":"S. Das, P. Sreeram, A. Raychaudhuri, T. Sai, L. Brar","doi":"10.1109/NANOEL.2006.1609771","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609771","url":null,"abstract":"We present an experimental investigation of the variation of the amplitude of vibrating microcantilever, as a function of distance (h) between the microcantilever and the sample in a Dynamic Force Microscopy (DFM) and explain the observations with a theoretical model. In DFM, as the cantilever tip approaches the sample, neither the force nor the response of the cantilever is in the linear regime. We present an exact numerical solution to the equation of motion of the oscillations of the microcantilever and present a quantitative explanation to the observed force versus distance curves, in terms of the resonance curves. We show that the change in the resonance frequency of the cantilever due to the atomic forces is highly nonlinear.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115845288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Nature of substitutional impurity atom B/N in zigzag single-wall carbon nanotubes revealed by first principle calculations 用第一性原理计算揭示之字形单壁碳纳米管中取代杂质原子B/N的性质
Pub Date : 1900-01-01 DOI: 10.1109/nanoel.2006.1609698
S.S. Yu, W. Zheng, Q. Wen, B. Zheng, H. Tian
We present systematic calculations for the single-walled zigzag (n, 0) carbon nanotubes containing the substitutional impurity atom B/N using the ab initio density-functional theory. It is found that the formation energies of the single-walled zigzag carbon nanotubes with substitutional impurity atom B/N depend on the tube diameters as well as the electric properties, and show periodic features. The nature of these periodic features has been revealed, which results from the different bonding structures of the perfect zigzag carbon tubes with different diameters, rather than the defects (substitutional impurity atom B/N) in the zigzag tubes.
本文采用从头算密度泛函理论对含有取代杂质原子B/ n的单壁之字形(n, 0)碳纳米管进行了系统计算。发现含有B/N取代杂质原子的单壁之字形碳纳米管的形成能与管径和电学性质有关,并表现出周期性特征。揭示了这些周期性特征的本质是由于不同直径的完美之字形碳管的不同键合结构,而不是由于之字形碳管中的缺陷(取代杂质原子B/N)。
{"title":"Nature of substitutional impurity atom B/N in zigzag single-wall carbon nanotubes revealed by first principle calculations","authors":"S.S. Yu, W. Zheng, Q. Wen, B. Zheng, H. Tian","doi":"10.1109/nanoel.2006.1609698","DOIUrl":"https://doi.org/10.1109/nanoel.2006.1609698","url":null,"abstract":"We present systematic calculations for the single-walled zigzag (n, 0) carbon nanotubes containing the substitutional impurity atom B/N using the ab initio density-functional theory. It is found that the formation energies of the single-walled zigzag carbon nanotubes with substitutional impurity atom B/N depend on the tube diameters as well as the electric properties, and show periodic features. The nature of these periodic features has been revealed, which results from the different bonding structures of the perfect zigzag carbon tubes with different diameters, rather than the defects (substitutional impurity atom B/N) in the zigzag tubes.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Organic Thin-Film Transistors Based On Conjugated Polymer and Carbon Nanotube Composites 基于共轭聚合物和碳纳米管复合材料的有机薄膜晶体管
Pub Date : 1900-01-01 DOI: 10.1109/nanoel.2006.1609758
Y. Gan, Chang Ming Li
In this paper we report on thin film transistors based on poly(3-hexylthiophene) (P3HT) and carbon nanotubes (CNTs) composite active materials. Single walled CNTs were dispersed into P3HT chloroform solution. By drop casting, the composite solution was deposited onto the pre-fabricated device and formed thin active layer. The effect of different concentrations of CNTs to the charge carrier mobility of the composite was studied. Very little amount of CNT added into the active material can improve the carrier mobility while the on/off ratio is not reduced.
本文报道了基于聚(3-己基噻吩)(P3HT)和碳纳米管(CNTs)复合活性材料的薄膜晶体管。将单壁CNTs分散到P3HT氯仿溶液中。通过滴铸将复合溶液沉积在预制器件上,形成薄的活性层。研究了不同浓度的CNTs对复合材料载流子迁移率的影响。在活性材料中加入少量碳纳米管可以提高载流子的迁移率,同时不降低开/关比。
{"title":"Organic Thin-Film Transistors Based On Conjugated Polymer and Carbon Nanotube Composites","authors":"Y. Gan, Chang Ming Li","doi":"10.1109/nanoel.2006.1609758","DOIUrl":"https://doi.org/10.1109/nanoel.2006.1609758","url":null,"abstract":"In this paper we report on thin film transistors based on poly(3-hexylthiophene) (P3HT) and carbon nanotubes (CNTs) composite active materials. Single walled CNTs were dispersed into P3HT chloroform solution. By drop casting, the composite solution was deposited onto the pre-fabricated device and formed thin active layer. The effect of different concentrations of CNTs to the charge carrier mobility of the composite was studied. Very little amount of CNT added into the active material can improve the carrier mobility while the on/off ratio is not reduced.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122752457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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2006 IEEE Conference on Emerging Technologies - Nanoelectronics
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