Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609756
W. Lee, C. Lai, C. Weng, Z. Juang, K. Leou, K. Chang-Liao, C. Tsai
The carbon-nanotube field-effect-transistors (CNTFETs) have been explored and proposed to be the promising candidates for the next generation integrated-circuit (IC) devices. The so-called Schottky barrier (SB)-FET is widely used to characterize the operation behavior of a CNTFET, and the Schottky barriers are affected by the gate fields at the metal-nanotube interfaces. By using the double-layered catalyst configuration (nickel and upper SiO2layer), SWNTs were in-situ grown across two catalytic pads on a substrate with a thinner thermal oxide layer above the channel and thicker ones at the two source/drain junction terminals. The uni-polar characteristics of a p-type CNTFET was consequently achieved by electrostatic engineering. The turn-off current (Ioff) was significantly reduced and the turn-on current (Ion) to Ioffratio was then increased up to ∼ 104. The p to n conversion was observed after several cycles of measurement in a vacuum environment presumably due to removal of adsorbed O2molecules. On the other hand, the hysteresis behavior of transfer characteristics was still observed, suggesting that the CNTFET could be used in non-volatile memory applications.
{"title":"Electrical Characteristics of CNT-FETs with Symmetric Field-Effect-Free-on Source and Drain","authors":"W. Lee, C. Lai, C. Weng, Z. Juang, K. Leou, K. Chang-Liao, C. Tsai","doi":"10.1109/NANOEL.2006.1609756","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609756","url":null,"abstract":"The carbon-nanotube field-effect-transistors (CNTFETs) have been explored and proposed to be the promising candidates for the next generation integrated-circuit (IC) devices. The so-called Schottky barrier (SB)-FET is widely used to characterize the operation behavior of a CNTFET, and the Schottky barriers are affected by the gate fields at the metal-nanotube interfaces. By using the double-layered catalyst configuration (nickel and upper SiO2layer), SWNTs were in-situ grown across two catalytic pads on a substrate with a thinner thermal oxide layer above the channel and thicker ones at the two source/drain junction terminals. The uni-polar characteristics of a p-type CNTFET was consequently achieved by electrostatic engineering. The turn-off current (Ioff) was significantly reduced and the turn-on current (Ion) to Ioffratio was then increased up to ∼ 104. The p to n conversion was observed after several cycles of measurement in a vacuum environment presumably due to removal of adsorbed O2molecules. On the other hand, the hysteresis behavior of transfer characteristics was still observed, suggesting that the CNTFET could be used in non-volatile memory applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132750343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609745
Y. Gan, Chang Ming Li
In this paper we report on thin film transistors based on poly(3-hexylthiophene) (P3HT) and carbon nanotubes (CNTs) composite active materials. Single walled CNTs were dispersed into P3HT chloroform solution. By drop casting, the composite solution was deposited onto the pre-fabricated device and formed thin active layer. The effect of different concentrations of CNTs to the charge carrier mobility of the composite was studied. Very little amount of CNT added into the active material can improve the carrier mobility while the on/off ratio is not reduced.
{"title":"Organic Thin-Film Transistors Based On Conjugated Polymer and Carbon Nanotube Composites","authors":"Y. Gan, Chang Ming Li","doi":"10.1109/NANOEL.2006.1609745","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609745","url":null,"abstract":"In this paper we report on thin film transistors based on poly(3-hexylthiophene) (P3HT) and carbon nanotubes (CNTs) composite active materials. Single walled CNTs were dispersed into P3HT chloroform solution. By drop casting, the composite solution was deposited onto the pre-fabricated device and formed thin active layer. The effect of different concentrations of CNTs to the charge carrier mobility of the composite was studied. Very little amount of CNT added into the active material can improve the carrier mobility while the on/off ratio is not reduced.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124203604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609766
A. Yangthaisong, T. Osotchan
The motivation for research into n-type strained-Si/SiGe-on-insulator metal-oxide field effect transistors (SiGe-OI MOSFETs) is to take advantage of both the enhancement of electron transport properties due to strain and the mass production of advanced CMOS technology. Two dimensional self-consistent ensemble Monte Carlo simulation has been used to provide a description of the steady and transient charge transport in a strained-Si/SiGe-OI nMOSFET with 55 nm gate length. The simulated device is similar to that investigate experimentally by the IBM group. The simulation provides information on the microscopic details of the carrier behavior, including carrier velocity, kinetic energy, and carrier density, as a function of position in the device. Detailed time-dependent voltage signal analysis has been carried out to test the device response and derive the frequency bandwidth, which has been compared with the result of an identical analysis performed on a conventional planar geometry silicon-on-insulator (SOI) n-MOSFET of similar dimensions and doping. A sinc voltage pulse is applied to the gate and the resulting drain current and gate currents used to calculate the current gain as a function of frequency. Figure 5 shows that the current gain of Si/SGOI MOSFET could have an intrinsic cut-off frequency approaching 200 ± 10 GHz, a 50 % improvement over the unstrained device.
{"title":"Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs","authors":"A. Yangthaisong, T. Osotchan","doi":"10.1109/NANOEL.2006.1609766","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609766","url":null,"abstract":"The motivation for research into n-type strained-Si/SiGe-on-insulator metal-oxide field effect transistors (SiGe-OI MOSFETs) is to take advantage of both the enhancement of electron transport properties due to strain and the mass production of advanced CMOS technology. Two dimensional self-consistent ensemble Monte Carlo simulation has been used to provide a description of the steady and transient charge transport in a strained-Si/SiGe-OI nMOSFET with 55 nm gate length. The simulated device is similar to that investigate experimentally by the IBM group. The simulation provides information on the microscopic details of the carrier behavior, including carrier velocity, kinetic energy, and carrier density, as a function of position in the device. Detailed time-dependent voltage signal analysis has been carried out to test the device response and derive the frequency bandwidth, which has been compared with the result of an identical analysis performed on a conventional planar geometry silicon-on-insulator (SOI) n-MOSFET of similar dimensions and doping. A sinc voltage pulse is applied to the gate and the resulting drain current and gate currents used to calculate the current gain as a function of frequency. Figure 5 shows that the current gain of Si/SGOI MOSFET could have an intrinsic cut-off frequency approaching 200 ± 10 GHz, a 50 % improvement over the unstrained device.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117235597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609706
P. Bai, E. Li, P. Collier, W. Chin, K. Loh
We study the electron conductance of thiophene dimers though metal-molecule-metal systems using the first principles method, which is based on the density functional theory (DFT) with norm conserving nonlocal pseudopotentials and nonequilibrium Green's function (NEGF) to calculate the charge distribution for open metal-molecule-metal systems. The structure and chemical properties of different thiophene dimers are investigated by changing the inter-ring torsional angles. Three thiophene dimers with typical properties are selected for the further study of their electronic properties. The three selected thiophene dimers together with gold electrodes and the terminal group sulpher are used to construct 3-D atomic metal-molecule-metal open systems, which are used to investigate the electron transport of the thiophene dimers. The current-voltage (I-V) characteristics, density of states (DOS), and the transmission function (TF) of constructed systems are investigated. Results show that the thiophene dimers in planar structures have smaller energy gaps, better electron transmission function, hence better electronic conductance than the thiophene dimers in twist structures does. The thiophene dimer with a perpendicular inter-ring structure has the poorest electron conductance. This implies that the thiophene oligomers can be used as wires, as well as switches by control the inter-ring torsional angles.
{"title":"Electron Conductance of Thiophene Dimers with Different Torsional Angles","authors":"P. Bai, E. Li, P. Collier, W. Chin, K. Loh","doi":"10.1109/NANOEL.2006.1609706","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609706","url":null,"abstract":"We study the electron conductance of thiophene dimers though metal-molecule-metal systems using the first principles method, which is based on the density functional theory (DFT) with norm conserving nonlocal pseudopotentials and nonequilibrium Green's function (NEGF) to calculate the charge distribution for open metal-molecule-metal systems. The structure and chemical properties of different thiophene dimers are investigated by changing the inter-ring torsional angles. Three thiophene dimers with typical properties are selected for the further study of their electronic properties. The three selected thiophene dimers together with gold electrodes and the terminal group sulpher are used to construct 3-D atomic metal-molecule-metal open systems, which are used to investigate the electron transport of the thiophene dimers. The current-voltage (I-V) characteristics, density of states (DOS), and the transmission function (TF) of constructed systems are investigated. Results show that the thiophene dimers in planar structures have smaller energy gaps, better electron transmission function, hence better electronic conductance than the thiophene dimers in twist structures does. The thiophene dimer with a perpendicular inter-ring structure has the poorest electron conductance. This implies that the thiophene oligomers can be used as wires, as well as switches by control the inter-ring torsional angles.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126139923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609713
O. Ngan, D. Mcphail, R. Chater, B. Shollock
The use of SIMS for the characterization and study of biomaterial surfaces is fast gaining popularity in the development of bio-functional and bioactive tissue compatible interfaces. The presence of TiO2oxide in metallic Ti implants and its ability to promote bioactivity is still unclear. FIB-SIMS (Focused Ion Beam-Secondary Ion Mass Spectrometry) and FIB-TEM (FIB-Transmission Electron Microscopy) techniques represent powerful tools for characterizing the oxide layer. This paper investigates the oxygen transport mechanism of thermal barrier coating systems applied on nickel-base superalloy turbine blades. In this study, a two-stage oxidation experiment is used.18O2is used as a tracer during the second stage oxidation on previously oxidized Ni-base superalloys with a layer of bond coat material. The aluminium oxide grown in16O2during the first stage oxidation serves as a background oxide. Mass spectra collected by FIB-SIMS reveal the counter mass transportation by inward diffusion of oxygen and outward diffusion of aluminium. New oxide formation during the second stage oxidation under an18O2enriched environment is observed at both the gas/oxide interface as well as oxide/superalloy interface. Transmission Electron Microscopy (TEM) can be used to identify the very fine phases developed in both the inter-diffusion zone as well as the thermally grown oxide layer. The use of Focused Ion Beam (FIB) technique allows for selective nano-machining of areas of interest for the production of TEM samples. FIB-SIMS and TEM are carried out to determine the specific phase transformations occurring in the TBC system.
{"title":"Characterization of Thin Oxide using FIB-SIMS and FIB-TEM Techniques","authors":"O. Ngan, D. Mcphail, R. Chater, B. Shollock","doi":"10.1109/NANOEL.2006.1609713","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609713","url":null,"abstract":"The use of SIMS for the characterization and study of biomaterial surfaces is fast gaining popularity in the development of bio-functional and bioactive tissue compatible interfaces. The presence of TiO2oxide in metallic Ti implants and its ability to promote bioactivity is still unclear. FIB-SIMS (Focused Ion Beam-Secondary Ion Mass Spectrometry) and FIB-TEM (FIB-Transmission Electron Microscopy) techniques represent powerful tools for characterizing the oxide layer. This paper investigates the oxygen transport mechanism of thermal barrier coating systems applied on nickel-base superalloy turbine blades. In this study, a two-stage oxidation experiment is used.18O2is used as a tracer during the second stage oxidation on previously oxidized Ni-base superalloys with a layer of bond coat material. The aluminium oxide grown in16O2during the first stage oxidation serves as a background oxide. Mass spectra collected by FIB-SIMS reveal the counter mass transportation by inward diffusion of oxygen and outward diffusion of aluminium. New oxide formation during the second stage oxidation under an18O2enriched environment is observed at both the gas/oxide interface as well as oxide/superalloy interface. Transmission Electron Microscopy (TEM) can be used to identify the very fine phases developed in both the inter-diffusion zone as well as the thermally grown oxide layer. The use of Focused Ion Beam (FIB) technique allows for selective nano-machining of areas of interest for the production of TEM samples. FIB-SIMS and TEM are carried out to determine the specific phase transformations occurring in the TBC system.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127573614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609770
P. Alfaro, M. Cruz, Chumin Wang
Porous silicon is a structurally complex material, in which effects of the pore topology on its physical properties are even controversial. In this work, we use the Born potential and the Green’s function, both applied to a supercell model, in order to analyze the Raman response and the phonon band structure of porous silicon. In this model the pores are simulated by empty columns of atoms, in direction [ 001], produced in a crystalline silicon structure. A consequence of the model is the interconnection between silicon nanocrystals, and then, all the states are extended. However, the results show a behavior similar to the quantum confinement. Moreover, a dependence of the Raman spectra with the pore topology is observed. Finally, a shift of the main Raman peak towards lower frequencies is found, in agreement with experimental data.
{"title":"The one phonon Raman spectrum of silicon nanostructures","authors":"P. Alfaro, M. Cruz, Chumin Wang","doi":"10.1109/NANOEL.2006.1609770","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609770","url":null,"abstract":"Porous silicon is a structurally complex material, in which effects of the pore topology on its physical properties are even controversial. In this work, we use the Born potential and the Green’s function, both applied to a supercell model, in order to analyze the Raman response and the phonon band structure of porous silicon. In this model the pores are simulated by empty columns of atoms, in direction [ 001], produced in a crystalline silicon structure. A consequence of the model is the interconnection between silicon nanocrystals, and then, all the states are extended. However, the results show a behavior similar to the quantum confinement. Moreover, a dependence of the Raman spectra with the pore topology is observed. Finally, a shift of the main Raman peak towards lower frequencies is found, in agreement with experimental data.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132748972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609724
G.Y. Chen, C. Poa, V. Stolojan, S. Silva
We present a novel approach, which will potentially allow for low-temperature-substrate synthesis of carbon nanotubes using direct-current plasma-enhanced chemical vapour deposition. The approach utilizes top-down plasma heating rather than conventional heating from a conventional substrate heater under the electrode. In this work, a relatively thick titanium layer is used as a thermal barrier to create a temperature gradient between the Ni catalyst surface and the substrate. We describe the growth properties as a function of the bias voltage and the hydrocarbon concentrations. The heating during growth is provided solely by the plasma, which is dependent only on the process conditions, which dictate the power density and the cooling of the substrate, plus now the thermal properties of the “barrier layer”. This novel approach of using plasma heating and thermal barrier allows for the synthesis of carbon nanotubes at low substrate temperature conditions to be attained with suitable cooling schemes.
{"title":"Novel approach to low substrate temperature synthesis of carbon nanotubes","authors":"G.Y. Chen, C. Poa, V. Stolojan, S. Silva","doi":"10.1109/NANOEL.2006.1609724","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609724","url":null,"abstract":"We present a novel approach, which will potentially allow for low-temperature-substrate synthesis of carbon nanotubes using direct-current plasma-enhanced chemical vapour deposition. The approach utilizes top-down plasma heating rather than conventional heating from a conventional substrate heater under the electrode. In this work, a relatively thick titanium layer is used as a thermal barrier to create a temperature gradient between the Ni catalyst surface and the substrate. We describe the growth properties as a function of the bias voltage and the hydrocarbon concentrations. The heating during growth is provided solely by the plasma, which is dependent only on the process conditions, which dictate the power density and the cooling of the substrate, plus now the thermal properties of the “barrier layer”. This novel approach of using plasma heating and thermal barrier allows for the synthesis of carbon nanotubes at low substrate temperature conditions to be attained with suitable cooling schemes.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131873432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609714
Qiao Wang, Peng Chen
Protein nanopores spanning a lipid bilayer membrane have been demonstrated as single molecule sensors that are highly sensitive to minute differences in the chemical and physical properties of the passing molecules. Nevertheless, their fixed aperture size, delicate physico-chemical, mechanical and electrical properties greatly limit the range of analytes and the repertoire of experimental possibilities. To overcome these limitations, nanoscale apertures on solid-state materials have been fabricated using state-of-the-art nanotechnologies, and have been used to probe the molecular characteristics of single nucleic acid chains.
{"title":"Nanopore Devices for Single Molecule Sensing","authors":"Qiao Wang, Peng Chen","doi":"10.1109/NANOEL.2006.1609714","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609714","url":null,"abstract":"Protein nanopores spanning a lipid bilayer membrane have been demonstrated as single molecule sensors that are highly sensitive to minute differences in the chemical and physical properties of the passing molecules. Nevertheless, their fixed aperture size, delicate physico-chemical, mechanical and electrical properties greatly limit the range of analytes and the repertoire of experimental possibilities. To overcome these limitations, nanoscale apertures on solid-state materials have been fabricated using state-of-the-art nanotechnologies, and have been used to probe the molecular characteristics of single nucleic acid chains.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132235593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609719
S. Fonash, D. Fenwick, P. Hallacher, T. Kuzma, W. Nam
The Pennsylvania Nanofabrication Manufacturing Technology (NMT) Partnership was formed in 1998 to create and nurture a skilled nanofabrication workforce in the State of Pennsylvania. The approach laid out emphasizes developing a strong nanotechnology workforce education effort that both opens the door to more high-tech jobs for Pennsylvanians and also strengthens PA industry. The partners in this endeavor are 29 Pennsylvania colleges and universities, Penn State University, industry, the State of Pennsylvania, and the National Science Foundation. The activities the partnership has developed in its approach include three-day Nanotech Camps for secondary school students, three-day Nanotechnology Workshops for secondary school teachers, Nanotechnology Utilization Workshops tailored for industry, Nanotechnology Associate (2-year) Degree programs, Baccalaureate Degree programs with concentrations in Nanotechnology, and Nanotechnology Experiment Kits to bring nanotechnology into existing chemistry, physics, and biology courses.
{"title":"Education and Training Approach for the Future Nanotechnology Workforce","authors":"S. Fonash, D. Fenwick, P. Hallacher, T. Kuzma, W. Nam","doi":"10.1109/NANOEL.2006.1609719","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609719","url":null,"abstract":"The Pennsylvania Nanofabrication Manufacturing Technology (NMT) Partnership was formed in 1998 to create and nurture a skilled nanofabrication workforce in the State of Pennsylvania. The approach laid out emphasizes developing a strong nanotechnology workforce education effort that both opens the door to more high-tech jobs for Pennsylvanians and also strengthens PA industry. The partners in this endeavor are 29 Pennsylvania colleges and universities, Penn State University, industry, the State of Pennsylvania, and the National Science Foundation. The activities the partnership has developed in its approach include three-day Nanotech Camps for secondary school students, three-day Nanotechnology Workshops for secondary school teachers, Nanotechnology Utilization Workshops tailored for industry, Nanotechnology Associate (2-year) Degree programs, Baccalaureate Degree programs with concentrations in Nanotechnology, and Nanotechnology Experiment Kits to bring nanotechnology into existing chemistry, physics, and biology courses.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134217717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609739
I. Gebeshuber, R. Smith, S. Pleschko, C. Grünberger, K. Kaska, M. Fuersatz, H. Winter, F. Aumayr
With the shrinking of semiconductor devices surface features and structuring become increasingly important. Generally, fast ions are used for modification of surfaces via ion beam writing. Their kinetic energy is not only dissipated close to the surface but also in deeper layers of the material. Associated radiation damage could become a problem in the production of novel 3D micro- and nanoelectromechanical systems (MEMS and NEMS). Slow (< 1keV) multiply-charged ions as opposed to fast ions are a new tool for gentler structuring of surfaces at the nanometer-scale. The substrate is modified only at and slightly below the surface, opening the possibility of controlling electronic properties at the nanometer scale, vertically and horizontally. Materials under investigation are highly orientated pyrolytic graphite, single crystal insulators (quartz, mica, aluminum oxide), hydrogen-terminated single-crystal silicon, AsSe- and Se-glass and mylar foils. The materials modified by the ion irradiation are investigated with scanning probe microscopy (AFM, STM) in ultrahigh vacuum and in ambient conditions.
{"title":"Nanostructuring surfaces with slow multiply-charged ions","authors":"I. Gebeshuber, R. Smith, S. Pleschko, C. Grünberger, K. Kaska, M. Fuersatz, H. Winter, F. Aumayr","doi":"10.1109/NANOEL.2006.1609739","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609739","url":null,"abstract":"With the shrinking of semiconductor devices surface features and structuring become increasingly important. Generally, fast ions are used for modification of surfaces via ion beam writing. Their kinetic energy is not only dissipated close to the surface but also in deeper layers of the material. Associated radiation damage could become a problem in the production of novel 3D micro- and nanoelectromechanical systems (MEMS and NEMS). Slow (< 1keV) multiply-charged ions as opposed to fast ions are a new tool for gentler structuring of surfaces at the nanometer-scale. The substrate is modified only at and slightly below the surface, opening the possibility of controlling electronic properties at the nanometer scale, vertically and horizontally. Materials under investigation are highly orientated pyrolytic graphite, single crystal insulators (quartz, mica, aluminum oxide), hydrogen-terminated single-crystal silicon, AsSe- and Se-glass and mylar foils. The materials modified by the ion irradiation are investigated with scanning probe microscopy (AFM, STM) in ultrahigh vacuum and in ambient conditions.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114190372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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