Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609730
C. Cojocaru, C. Harnagea, A. Pignolet, F. Rosei
We present how various features drawn in a miniature shadow-mask (nanostencil) can be efficiently transferred to a surface in the form of 3D nanostructures of metals (Pt, Cr), semiconductors (Ge) or complex oxides (e.g. BaTiO3) by room temperature pulsed laser deposition (PLD) and stenciling. Using the proposed method, there is no aggressive interaction with the substrate, but selective deposition of the material by simply interposing a sieve with apertures down to 100 nm between the deposition source and the substrate. Nanostenciling allows organizing the structures in given architectures, with high accuracy, while reducing drastically the number of processes present in resist-based lithography. The material deposited through the stencil mask conserves the desired functionality even at the level of the individual nanostructures. The patterning process is simple and rapid since it is not implying additional processing steps to the deposition process; it is also parallel, resist-less and without interfering with the structures natural growth dynamics. Nanostenciling can be performed in high or ultra high vacuum and is suitable for parallel prototyping of fragile or functionalized surfaces.
{"title":"Patterning of Functional Materials by Pulsed Laser Deposition through Nanostencils","authors":"C. Cojocaru, C. Harnagea, A. Pignolet, F. Rosei","doi":"10.1109/NANOEL.2006.1609730","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609730","url":null,"abstract":"We present how various features drawn in a miniature shadow-mask (nanostencil) can be efficiently transferred to a surface in the form of 3D nanostructures of metals (Pt, Cr), semiconductors (Ge) or complex oxides (e.g. BaTiO3) by room temperature pulsed laser deposition (PLD) and stenciling. Using the proposed method, there is no aggressive interaction with the substrate, but selective deposition of the material by simply interposing a sieve with apertures down to 100 nm between the deposition source and the substrate. Nanostenciling allows organizing the structures in given architectures, with high accuracy, while reducing drastically the number of processes present in resist-based lithography. The material deposited through the stencil mask conserves the desired functionality even at the level of the individual nanostructures. The patterning process is simple and rapid since it is not implying additional processing steps to the deposition process; it is also parallel, resist-less and without interfering with the structures natural growth dynamics. Nanostenciling can be performed in high or ultra high vacuum and is suitable for parallel prototyping of fragile or functionalized surfaces.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116129029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609743
Z. G. Wu, H. N. Cheang, D. Ghista, A. Liu
Planar focusing is widely used in lab-on-a-chip applications and devices. In the previous works, only the steady state was considered for the planar focusing. In this study, a dynamic response of planar focusing is studied using numerical simulation. From our simulation, the response time is various with different inlet velocity and focusing ratio. The results show that at small velocity, the response time is quit short and the velocity magnitude has small influence on response time. Interesting, we also found that the ratio of focusing ratio affect the response time stronger than velocity magnitude. It is useful to design and optimize planar focusing microfluidic cell sorters or other microfluidic devices.
{"title":"Dynamic Study of Planar Focusing for a Microfluidic Cell Sorter","authors":"Z. G. Wu, H. N. Cheang, D. Ghista, A. Liu","doi":"10.1109/NANOEL.2006.1609743","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609743","url":null,"abstract":"Planar focusing is widely used in lab-on-a-chip applications and devices. In the previous works, only the steady state was considered for the planar focusing. In this study, a dynamic response of planar focusing is studied using numerical simulation. From our simulation, the response time is various with different inlet velocity and focusing ratio. The results show that at small velocity, the response time is quit short and the velocity magnitude has small influence on response time. Interesting, we also found that the ratio of focusing ratio affect the response time stronger than velocity magnitude. It is useful to design and optimize planar focusing microfluidic cell sorters or other microfluidic devices.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129729614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609744
K. Prakash, C. Ooi, R. Kumar, K. Khor, P. Cheang
Hydroxyapatite (HA) is synthesized through acid-base reaction by adding an aqueous solution of orthophosphoric acid to an aqueous solution of calcium hydroxide maintained at 40, 80 and 100°C. X-ray diffraction of the precipitate particles revealed HA as the predominant phase in all the temperatures and that the morphology of the particles changed from needle-shaped at 40°C to spheroid at 100°C. The changes in the morphology with temperature were analyzed taking into account the driving force for the HA precipitation and the super saturation level of Ca2+and PO43-ions with respect to HA. It appears that the effect of temperature on morphology is less pronounced compared to that of super saturation level. The analysis also indicated that the super saturation level of the reactants, especially the concentration of Ca2+ions, played a predominant role on the precipitate morphology for this classical acid-base reaction.
{"title":"Effect of Super Saturation Level on the size and morphology of Hydroxyapatite precipitate","authors":"K. Prakash, C. Ooi, R. Kumar, K. Khor, P. Cheang","doi":"10.1109/NANOEL.2006.1609744","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609744","url":null,"abstract":"Hydroxyapatite (HA) is synthesized through acid-base reaction by adding an aqueous solution of orthophosphoric acid to an aqueous solution of calcium hydroxide maintained at 40, 80 and 100°C. X-ray diffraction of the precipitate particles revealed HA as the predominant phase in all the temperatures and that the morphology of the particles changed from needle-shaped at 40°C to spheroid at 100°C. The changes in the morphology with temperature were analyzed taking into account the driving force for the HA precipitation and the super saturation level of Ca2+and PO43-ions with respect to HA. It appears that the effect of temperature on morphology is less pronounced compared to that of super saturation level. The analysis also indicated that the super saturation level of the reactants, especially the concentration of Ca2+ions, played a predominant role on the precipitate morphology for this classical acid-base reaction.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130879807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609700
P. C. Yu, Q.F. Li, J. Fuh
The nano-sized Yttria Stabilized Zirconia (Nano YSZ) powder with an average particles size of 50nm is initially heat treated and then mixed with wax-based binder system. The prepared feedstock is then formed into a shape by powder injection moulding process. The green parts are then thermally debound and sintered. The sintering behavior of the nano-sized particles is presented and compared with those of BASF feedstock. It is found that Nano YSZ can achieve 98% of its theoretical density. Homogenous microstructure is obtained with an average grain size of 500nm. The hardness value of the sintered Nano YSZ is similar to those obtained from BASF feedstock.
{"title":"Sintering of Nano-sized Zirconia Powder Processed by Powder Injection Moulding","authors":"P. C. Yu, Q.F. Li, J. Fuh","doi":"10.1109/NANOEL.2006.1609700","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609700","url":null,"abstract":"The nano-sized Yttria Stabilized Zirconia (Nano YSZ) powder with an average particles size of 50nm is initially heat treated and then mixed with wax-based binder system. The prepared feedstock is then formed into a shape by powder injection moulding process. The green parts are then thermally debound and sintered. The sintering behavior of the nano-sized particles is presented and compared with those of BASF feedstock. It is found that Nano YSZ can achieve 98% of its theoretical density. Homogenous microstructure is obtained with an average grain size of 500nm. The hardness value of the sintered Nano YSZ is similar to those obtained from BASF feedstock.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122307513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609699
H. Su, K. Shin, K. Leou, C. Tsai
In this paper, high quality single-walled carbon nanotubes (SWNTs) were synthesized by multilayered metal catalysts on silicon or silicon oxide substrate using thermal chemical vapor deposition method. The roles of multilayered metal catalyst were investigated by systematically varying the combinations of multilayered structure. Scanning electron microscopy, Atomic force microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to examine the evolution of the morphology and the oxidation state of each constituent of the multilayered structure in the thermal processes and their roles in controlling the formation of SWNTs.
{"title":"On the roles of multilayered metal catalysts in the synthesis of high-quality single-walled carbon nanotubes","authors":"H. Su, K. Shin, K. Leou, C. Tsai","doi":"10.1109/NANOEL.2006.1609699","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609699","url":null,"abstract":"In this paper, high quality single-walled carbon nanotubes (SWNTs) were synthesized by multilayered metal catalysts on silicon or silicon oxide substrate using thermal chemical vapor deposition method. The roles of multilayered metal catalyst were investigated by systematically varying the combinations of multilayered structure. Scanning electron microscopy, Atomic force microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to examine the evolution of the morphology and the oxidation state of each constituent of the multilayered structure in the thermal processes and their roles in controlling the formation of SWNTs.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126844979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609682
M. Wautelet, A. Shirinyan
The phase diagram of nanoparticles is known to be a function of their size and shape. The variation with temperature depends on the surface tensions involved in the phase transitions. Moreover, when looking at the nucleation process in nanoparticles, it turns out that it is necessary to take into account the fact that the reservoir of matter is limited. This gives rise to three possibilities: phase separation, prohibition of decomposition, formation of metastable phases. It is also shown theoretically that the usual concept of phase diagram has to be reformulated when dealing with nanoparticles.
{"title":"Phase stability of nanosystems : the thermodynamical approach","authors":"M. Wautelet, A. Shirinyan","doi":"10.1109/NANOEL.2006.1609682","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609682","url":null,"abstract":"The phase diagram of nanoparticles is known to be a function of their size and shape. The variation with temperature depends on the surface tensions involved in the phase transitions. Moreover, when looking at the nucleation process in nanoparticles, it turns out that it is necessary to take into account the fact that the reservoir of matter is limited. This gives rise to three possibilities: phase separation, prohibition of decomposition, formation of metastable phases. It is also shown theoretically that the usual concept of phase diagram has to be reformulated when dealing with nanoparticles.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"48 22","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120812003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609694
Zhiwei Zhao, B. Tay, D. McCulloch, J. Peng
Multilayer device with 8 nano-layers consisting of alternate TiO2thin films (high refractive index) and Al2O3thin films (low refractive index) have been successfully fabricated by filtered cathodic vacuum arc (FCVA) with two separate cathodic sources. Microstructure and element distribution of multilayer coatings were examined by TEM and electron energy loss spectroscopy (EELS), respectively. The results show that the interfaces of the layers are well defined and exhibit smooth, sharp and flat properties. Each layer with nano-thickness keeps amorphous structure as determined by the electron diffraction pattern and XRD. The bond nature in respective TiO2and Al2O3layers is Ti4+-O2-and Al3+-O2-and no atoms diffuse into the nearby layer as concluded by EELS measurements. Good homogeneity in microstructure and element distribution indicates the potential deposition of multilayer by FCVA for advanced performances including optical application.
{"title":"Fabrication of Nanoscale Multilayer Device by Filtered Cathodic Vacuum Arc for Optical Application","authors":"Zhiwei Zhao, B. Tay, D. McCulloch, J. Peng","doi":"10.1109/NANOEL.2006.1609694","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609694","url":null,"abstract":"Multilayer device with 8 nano-layers consisting of alternate TiO<inf>2</inf>thin films (high refractive index) and Al<inf>2</inf>O<inf>3</inf>thin films (low refractive index) have been successfully fabricated by filtered cathodic vacuum arc (FCVA) with two separate cathodic sources. Microstructure and element distribution of multilayer coatings were examined by TEM and electron energy loss spectroscopy (EELS), respectively. The results show that the interfaces of the layers are well defined and exhibit smooth, sharp and flat properties. Each layer with nano-thickness keeps amorphous structure as determined by the electron diffraction pattern and XRD. The bond nature in respective TiO<inf>2</inf>and Al<inf>2</inf>O<inf>3</inf>layers is Ti<sup>4+</sup>-O<sup>2-</sup>and Al<sup>3+</sup>-O<sup>2-</sup>and no atoms diffuse into the nearby layer as concluded by EELS measurements. Good homogeneity in microstructure and element distribution indicates the potential deposition of multilayer by FCVA for advanced performances including optical application.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132424275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609707
A. Nguyen, P. Lee
Fabrication of ferroelectric memory field effect transistor (FEMFET) is presented with copolymer P(VDF-TrFE) as gate dielectric. Spin-coated copolymer film has semi-crystalline structure after annealing, in which the crystallites contains ferroelectric and paraelectric phase. Dipolar alignment in ferroelectric phase is controlled with the sweeping of transistor gate bias. Ferroelectric remanent polarization enables current retention in the transistor during OFF state that can be used in non-volatile memory application.
{"title":"Ferroelectric copolymer P(VDF-TrFE) as gate dielectric in organic field effect transistors for memory application devices","authors":"A. Nguyen, P. Lee","doi":"10.1109/NANOEL.2006.1609707","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609707","url":null,"abstract":"Fabrication of ferroelectric memory field effect transistor (FEMFET) is presented with copolymer P(VDF-TrFE) as gate dielectric. Spin-coated copolymer film has semi-crystalline structure after annealing, in which the crystallites contains ferroelectric and paraelectric phase. Dipolar alignment in ferroelectric phase is controlled with the sweeping of transistor gate bias. Ferroelectric remanent polarization enables current retention in the transistor during OFF state that can be used in non-volatile memory application.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116929476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609686
H. Hartnagel
One-dimensioned electron gas (1DEG) structures can be fabricated from suitable hetero-structure sandwiches by using nano-technology Schottky- or MOS lithography. We have grown by MBE InAs sandwiched nearly lattice matched between AlSb and GaSb layers and obtained for InAs thicknesses of around 15 nm a room temperature mobility of up to 32000cm2/Vs, provided that the heterojunction was of InSb type. At 77K the electron gas has a mobility of up to 225000 cm2/Vs. Si-Nanowires are found to have an interesting band structure, which is different from Si bulk material. The InAs 1DEG exhibits a quantum-physical behaviour at low temperatures of a reasonable well defined quantized staircase conductance of a ballistic electron wave with increasing applied voltage. InAs is a material where such behaviour is expected to occur at not too low temperature. If two such 1DEG structures of slightly different geometry in parallel are applied with a triangular voltage, the difference potential between each of these two 1DEG’s is a pulse sequence. The number of pulses obtained then depends on the amplitude of the triangular voltage. This can be considered as a basic unit for an Analogue-Digital Converter. These concepts were initially outlined by us at one of the European workshops, intended for discussion of new ideas. Such nano-conductance lines and zero-DEG quantum dot electronic structures can be interconnected in such a manner that various types of signal processing can be achieved.
{"title":"New Nanometric Opportunities with High Mobility Semiconductors such as InAs","authors":"H. Hartnagel","doi":"10.1109/NANOEL.2006.1609686","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609686","url":null,"abstract":"One-dimensioned electron gas (1DEG) structures can be fabricated from suitable hetero-structure sandwiches by using nano-technology Schottky- or MOS lithography. We have grown by MBE InAs sandwiched nearly lattice matched between AlSb and GaSb layers and obtained for InAs thicknesses of around 15 nm a room temperature mobility of up to 32000cm2/Vs, provided that the heterojunction was of InSb type. At 77K the electron gas has a mobility of up to 225000 cm2/Vs. Si-Nanowires are found to have an interesting band structure, which is different from Si bulk material. The InAs 1DEG exhibits a quantum-physical behaviour at low temperatures of a reasonable well defined quantized staircase conductance of a ballistic electron wave with increasing applied voltage. InAs is a material where such behaviour is expected to occur at not too low temperature. If two such 1DEG structures of slightly different geometry in parallel are applied with a triangular voltage, the difference potential between each of these two 1DEG’s is a pulse sequence. The number of pulses obtained then depends on the amplitude of the triangular voltage. This can be considered as a basic unit for an Analogue-Digital Converter. These concepts were initially outlined by us at one of the European workshops, intended for discussion of new ideas. Such nano-conductance lines and zero-DEG quantum dot electronic structures can be interconnected in such a manner that various types of signal processing can be achieved.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132740623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609683
H.M. Lu, Q. Jiang
A model for size-dependent surface energy of nanocrystals, γsv(D), has been established based on previous models for bulk surface energy γsv0and the size-dependent cohesive energy E(D). Since the structure and energy differences between solid and liquid are small in comparison with those between solid and gas or between liquid and gas, this model can be extended to describe the size dependence of surface tension γ1v(D). It is found that γsv(D) and γ1v(D) drop monotonically with size in the nanometer region while the surface energy ratio between different facets is size-independent and equals the corresponding bulk one. Moreover, size dependence of Tolman length is also discussed. Modeling predictions agree with the experimental and theoretical results of γsv(D) for beryllium, magnesium, sodium, aluminum and gold, and the computer simulations of γ1v(D) for sodium, and aluminum droplets.
{"title":"Size Dependent Surface Energy and Surface Tension","authors":"H.M. Lu, Q. Jiang","doi":"10.1109/NANOEL.2006.1609683","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609683","url":null,"abstract":"A model for size-dependent surface energy of nanocrystals, γ<inf>sv</inf>(D), has been established based on previous models for bulk surface energy γ<inf>sv0</inf>and the size-dependent cohesive energy E(D). Since the structure and energy differences between solid and liquid are small in comparison with those between solid and gas or between liquid and gas, this model can be extended to describe the size dependence of surface tension γ<inf>1v</inf>(D). It is found that γ<inf>sv</inf>(D) and γ<inf>1v</inf>(D) drop monotonically with size in the nanometer region while the surface energy ratio between different facets is size-independent and equals the corresponding bulk one. Moreover, size dependence of Tolman length is also discussed. Modeling predictions agree with the experimental and theoretical results of γ<inf>sv</inf>(D) for beryllium, magnesium, sodium, aluminum and gold, and the computer simulations of γ<inf>1v</inf>(D) for sodium, and aluminum droplets.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131966967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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