Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609741
I. Z. Rahman, K. Razeeb, M.A. Rahman
Nickel nanowires were grown by electrodeposition within Al2O3templates (NCA100 and NCA20) having average pore diameters of 240 and 200 nm. The growth of nanowires was investigated by Scanning Electron Microscopy (SEM). X-ray diffraction analysis shows polycrystalline nature of the nanowires having average crystallite size varying from 24 to 35 nm. Average crystallite size and the crystal orientation were dependent on the pH and temperature of the electrolyte. Bulk magnetic properties of nickel filled nanoporous arrays were investigated using the Vibrating sample magnetometer (VSM). Coercivity as high as 19.42 kA m-1was obtained from 12.5μm length nanowires deposited inside NCA20. Atomic Force Microscopy (AFM) and Magnetic Force Microscopy (MFM) were employed to investigate the topography and magnetic domain structures on top of these nanowires when they reside inside the templates.
采用电沉积法在平均孔径为240 nm和200 nm的al2o3模板(NCA100和NCA20)中生长镍纳米线。利用扫描电子显微镜(SEM)研究了纳米线的生长过程。x射线衍射分析表明，纳米线具有多晶性质，平均晶粒尺寸在24 ~ 35 nm之间。平均晶粒尺寸和晶体取向取决于电解质的pH值和温度。采用振动样品磁强计(VSM)研究了镍填充纳米孔阵列的体磁性能。在NCA20中沉积12.5μm长的纳米线，其矫顽力高达19.42 kA m-1。利用原子力显微镜(AFM)和磁力显微镜(MFM)研究了纳米线在模板内的表面形貌和磁畴结构。
{"title":"AFM and MFM Study of Electrodeposited Ni Nanowires Grown Inside Pores of NCA Templates","authors":"I. Z. Rahman, K. Razeeb, M.A. Rahman","doi":"10.1109/NANOEL.2006.1609741","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609741","url":null,"abstract":"Nickel nanowires were grown by electrodeposition within Al2O3templates (NCA100 and NCA20) having average pore diameters of 240 and 200 nm. The growth of nanowires was investigated by Scanning Electron Microscopy (SEM). X-ray diffraction analysis shows polycrystalline nature of the nanowires having average crystallite size varying from 24 to 35 nm. Average crystallite size and the crystal orientation were dependent on the pH and temperature of the electrolyte. Bulk magnetic properties of nickel filled nanoporous arrays were investigated using the Vibrating sample magnetometer (VSM). Coercivity as high as 19.42 kA m-1was obtained from 12.5μm length nanowires deposited inside NCA20. Atomic Force Microscopy (AFM) and Magnetic Force Microscopy (MFM) were employed to investigate the topography and magnetic domain structures on top of these nanowires when they reside inside the templates.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126452966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609679
M. Batistuta, M. Stella, H. Biagi, J. D. da Costa
A one-dimensional model is developed and numerical simulation results are presented for single-electron tunnelling non-linear dynamics in a pair of coupled quantum dots, with ohmic energy dissipation. The analysis of a simple mesoscopic cell structure with two coupled quantum dots, possessing bi-stability with only one excess electron, is also presented in order to evaluate its application in implementing fast cellular automata.
{"title":"Simulation of Dissipative Single-Electron Dynamics in Coupled Quantum Wells","authors":"M. Batistuta, M. Stella, H. Biagi, J. D. da Costa","doi":"10.1109/NANOEL.2006.1609679","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609679","url":null,"abstract":"A one-dimensional model is developed and numerical simulation results are presented for single-electron tunnelling non-linear dynamics in a pair of coupled quantum dots, with ohmic energy dissipation. The analysis of a simple mesoscopic cell structure with two coupled quantum dots, possessing bi-stability with only one excess electron, is also presented in order to evaluate its application in implementing fast cellular automata.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129635957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609725
E. Seebauer
In the same way that gases react with surfaces from above, bulk point defects such as interstitial atoms and vacancies can react from below. Little attention has been paid to this form of surface chemistry, although it is very important for nanoscale semiconductor devices where all regions are in close proximity to a surface or interface. Recent solid-state diffusion measurements and modeling in our laboratory have shown that reactions between defects and semiconductor surfaces can play the dominant role in regulating defect concentrations. Furthermore, the rates of these reactions can be controlled through submonolayer gas adsorption. There are two separate mechanisms for using the surface to control bulk defect concentrations. The first mechanism involves reflecting charged defects from the surface due to electrically active surface defects that set up a repulsive electric field. The second mechanism involves the exchange of defects with surface dangling bonds. Taken together, these observations point to entirely new possibilities for controlling and manipulating defects in semiconductor nanostructure fabrication.
{"title":"Defect Engineering in Nanoscale Semiconductors through Surface Chemistry","authors":"E. Seebauer","doi":"10.1109/NANOEL.2006.1609725","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609725","url":null,"abstract":"In the same way that gases react with surfaces from above, bulk point defects such as interstitial atoms and vacancies can react from below. Little attention has been paid to this form of surface chemistry, although it is very important for nanoscale semiconductor devices where all regions are in close proximity to a surface or interface. Recent solid-state diffusion measurements and modeling in our laboratory have shown that reactions between defects and semiconductor surfaces can play the dominant role in regulating defect concentrations. Furthermore, the rates of these reactions can be controlled through submonolayer gas adsorption. There are two separate mechanisms for using the surface to control bulk defect concentrations. The first mechanism involves reflecting charged defects from the surface due to electrically active surface defects that set up a repulsive electric field. The second mechanism involves the exchange of defects with surface dangling bonds. Taken together, these observations point to entirely new possibilities for controlling and manipulating defects in semiconductor nanostructure fabrication.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126019801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609759
Qin Zhou, Changming Li
In this work, an electrochemical cell was designed and fabricated for in situ AFM study of the electropolymerization process of PPY in the presence of gold nanoparticles. PPY/Au nanocomposite was one step-synthesized simply by the potentiostatic deposition at constant potential. Based on the results of the current-time transient (I-t) measurements and in situ AFM measurements, it was found that the nucleation and growth of PPY/Au nanocomposite was an instantaneous three-dimension progress after nuclei overlapping. Regarding the process before nuclei overlapping, compared with that of pure PPY, it departed from the instantaneous three-dimension progress because of the presence of gold nanoparticles.
{"title":"In situ AFM Study of the Electropolymerization of Polypyrrole/Gold Nanocomposite","authors":"Qin Zhou, Changming Li","doi":"10.1109/NANOEL.2006.1609759","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609759","url":null,"abstract":"In this work, an electrochemical cell was designed and fabricated for in situ AFM study of the electropolymerization process of PPY in the presence of gold nanoparticles. PPY/Au nanocomposite was one step-synthesized simply by the potentiostatic deposition at constant potential. Based on the results of the current-time transient (I-t) measurements and in situ AFM measurements, it was found that the nucleation and growth of PPY/Au nanocomposite was an instantaneous three-dimension progress after nuclei overlapping. Regarding the process before nuclei overlapping, compared with that of pure PPY, it departed from the instantaneous three-dimension progress because of the presence of gold nanoparticles.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"490-495 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130549218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609746
K. Chan, J.H. Wei
The effects of size fluctuation on the gain and related characteristics of quantum dash structures are analysed theoretically. Detailed comparison with quantum well structures and performance optimization by blue-shifting the emission energy are carried out.
{"title":"The Gain and Related Characteristics of Self-Assembled Quantum Dash Structures","authors":"K. Chan, J.H. Wei","doi":"10.1109/NANOEL.2006.1609746","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609746","url":null,"abstract":"The effects of size fluctuation on the gain and related characteristics of quantum dash structures are analysed theoretically. Detailed comparison with quantum well structures and performance optimization by blue-shifting the emission energy are carried out.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129205868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609701
Y. Wu, A. Tok, F. Boey, X. Zeng, X. Zhang
Nano-crystalline ZnO particles were synthesized using alcoholic solutions of zinc acetate dihydrate through a colloidal process. Five types of capping agents: 3-aminopropyl trimethoxysilane (Am), tetraethyl orthosilicate (TEOS), mercaptosuccinic acid (Ms), 3-mercaptopropyl trimethoxysilane (Mp) and polyvinylpyrrolidone (Pv) were added at the first ZnO precipitation time (1stPPT) to limit the particle growth. The first three capping agents effectively capped the ZnO nanoparticles and limited the growth of the particles, while the last two capping agents caused agglomeration or larger clusters in the solutions. Particles synthesized were in the size range of 10nm to 30nm after capping, and grew to 60nm and 100nm in 3 weeks and 6 weeks respectively during storage at ambient conditions. Refluxing time was found to only affect the 1stPPT time. Washing by methanol and water and slow drying are very important in converting Zn(OH)2into ZnO. XRD analyses revealed that single crystal ZnO nanoparticles were achieved with crystal size 53-55nm. Photoluminescence (PL) spectra showed high intensity in UV emission and very low intensity in the visible emission, which indicates a good surface morphology of the ZnO nanoparticles with little surface defect. Optical absorption spectra showed absorption at wavelength of 380nm from the uncapped ZnO, corresponding to the band-gap of bulk ZnO. While capped ZnO absorbed at shorter wavelength (350nm) indicating a much smaller particle size.
{"title":"Chemical Synthesis of ZnO Nanocrystals","authors":"Y. Wu, A. Tok, F. Boey, X. Zeng, X. Zhang","doi":"10.1109/NANOEL.2006.1609701","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609701","url":null,"abstract":"Nano-crystalline ZnO particles were synthesized using alcoholic solutions of zinc acetate dihydrate through a colloidal process. Five types of capping agents: 3-aminopropyl trimethoxysilane (Am), tetraethyl orthosilicate (TEOS), mercaptosuccinic acid (Ms), 3-mercaptopropyl trimethoxysilane (Mp) and polyvinylpyrrolidone (Pv) were added at the first ZnO precipitation time (1stPPT) to limit the particle growth. The first three capping agents effectively capped the ZnO nanoparticles and limited the growth of the particles, while the last two capping agents caused agglomeration or larger clusters in the solutions. Particles synthesized were in the size range of 10nm to 30nm after capping, and grew to 60nm and 100nm in 3 weeks and 6 weeks respectively during storage at ambient conditions. Refluxing time was found to only affect the 1stPPT time. Washing by methanol and water and slow drying are very important in converting Zn(OH)2into ZnO. XRD analyses revealed that single crystal ZnO nanoparticles were achieved with crystal size 53-55nm. Photoluminescence (PL) spectra showed high intensity in UV emission and very low intensity in the visible emission, which indicates a good surface morphology of the ZnO nanoparticles with little surface defect. Optical absorption spectra showed absorption at wavelength of 380nm from the uncapped ZnO, corresponding to the band-gap of bulk ZnO. While capped ZnO absorbed at shorter wavelength (350nm) indicating a much smaller particle size.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126155731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609731
C. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, H. Morisaki
The SiOxthin film made of the SiOxnanoparticles (~40, gm) shows a strong reaction to laser irradiation. The photosynthesis of silicon (Si) nanocrystals (NC's) is found to be self-limited to the laser power and exposure time. Furthermore, the laser irradiation of the SiOxfilm not only produces Si NC's, also transforms the SiOxfilm from the powder-like to the continuous. The photosynthesis of Si NC's has several advantages such as low-temperature process and good control in the size and positioning over the conventional synthesis methods and has many potential applications.
{"title":"Position and Size-Controlled Photosynthesis of Silicon Nanocrystals in SiO2Films","authors":"C. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, H. Morisaki","doi":"10.1109/NANOEL.2006.1609731","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609731","url":null,"abstract":"The SiOxthin film made of the SiOxnanoparticles (~40, gm) shows a strong reaction to laser irradiation. The photosynthesis of silicon (Si) nanocrystals (NC's) is found to be self-limited to the laser power and exposure time. Furthermore, the laser irradiation of the SiOxfilm not only produces Si NC's, also transforms the SiOxfilm from the powder-like to the continuous. The photosynthesis of Si NC's has several advantages such as low-temperature process and good control in the size and positioning over the conventional synthesis methods and has many potential applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131694208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609703
S. Murshed, K. Leong, C. Yang
This paper presents theoretical and experimental investigations on the enhanced thermal conductivity of nanofluids. The thermal conductivity of nanofluids is found to significantly increase with particle volume fraction. Taking into account the effects of the interfacial layer and particle size, two models (one for spherical nanoparticles and the other for cylindrical nanoparticles in base fluids) are developed to predict the effective thermal conductivity of nanofluids. The proposed models show good agreement with the experimental results and give better predictions of the effective thermal conductivity of nanofluids compared to existing models in the literature.
{"title":"Thermal Conductivity of Nanoparticle Suspensions (Nanofluids)","authors":"S. Murshed, K. Leong, C. Yang","doi":"10.1109/NANOEL.2006.1609703","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609703","url":null,"abstract":"This paper presents theoretical and experimental investigations on the enhanced thermal conductivity of nanofluids. The thermal conductivity of nanofluids is found to significantly increase with particle volume fraction. Taking into account the effects of the interfacial layer and particle size, two models (one for spherical nanoparticles and the other for cylindrical nanoparticles in base fluids) are developed to predict the effective thermal conductivity of nanofluids. The proposed models show good agreement with the experimental results and give better predictions of the effective thermal conductivity of nanofluids compared to existing models in the literature.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134279652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609760
Y. Mei, G. Siu, R. Fu, P. Chu, J. Zhai, Y.J. Wang, O. Tsui, Z. Tang, J.J. Shi, M. Kong
A nano-MOS array consisting of metallic carbon nanostructures connected with nanoscale SiO2islands inside insulated alumina nanochannel on silicon substrate was fabricated via Si-based porous anodic alumina (PAA) template. The electrical properties of the nano-MOS array were studied by means of current-voltage (I-V) and frequency dependent capacitance-voltage (C-V) tests. This structure is important to the application of carbon nanostructures and PAA template and has high potential in future nanoelectronics applications.
{"title":"A Nano-MOS Array: Metallic Carbon Nanostructure Connected with Nanoscale SiO2Islands inside Insulated Alumina Nanochannels on Silicon Substrate","authors":"Y. Mei, G. Siu, R. Fu, P. Chu, J. Zhai, Y.J. Wang, O. Tsui, Z. Tang, J.J. Shi, M. Kong","doi":"10.1109/NANOEL.2006.1609760","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609760","url":null,"abstract":"A nano-MOS array consisting of metallic carbon nanostructures connected with nanoscale SiO2islands inside insulated alumina nanochannel on silicon substrate was fabricated via Si-based porous anodic alumina (PAA) template. The electrical properties of the nano-MOS array were studied by means of current-voltage (I-V) and frequency dependent capacitance-voltage (C-V) tests. This structure is important to the application of carbon nanostructures and PAA template and has high potential in future nanoelectronics applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115687971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609690
A. Agarwal, N. Singh, T. Liow, R. Kumar, N. Balasubramanian, D. Kwong
Silicon nanowires (SiNW) were fabricated on bulk Silicon and SOI wafers by means of conventional Si process technology. The nanowires were formed by stress-limited oxidation of Si beams pre-patterned on the wafer. Single or double vertically self-aligned wires were obtained depending on the bulk or SOI wafer used and also on the depth of silicon beam etched. The resulting nanowires exhibit triangular cross-section that can be converted to circular shape by annealing at high temperatures, exploiting the visco-elastic properties of SiO2and Si. Electrical measurements on single nanowire show that the resistance scales with length demonstrating consistent cross-sectional dimension in wires of different length. The nanowires formed on SOI wafers were also characterized as channels in FET configuration, using substrate as gate electrode. This technique can be exploited for realizing several nano-electronics, NEMS and biosensor applications in bulk silicon or SOI wafers, all in a CMOS compatible manner.
{"title":"Transport Characteristics of Si Nanowires in Bulk Silicon and SOI Wafers","authors":"A. Agarwal, N. Singh, T. Liow, R. Kumar, N. Balasubramanian, D. Kwong","doi":"10.1109/NANOEL.2006.1609690","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609690","url":null,"abstract":"Silicon nanowires (SiNW) were fabricated on bulk Silicon and SOI wafers by means of conventional Si process technology. The nanowires were formed by stress-limited oxidation of Si beams pre-patterned on the wafer. Single or double vertically self-aligned wires were obtained depending on the bulk or SOI wafer used and also on the depth of silicon beam etched. The resulting nanowires exhibit triangular cross-section that can be converted to circular shape by annealing at high temperatures, exploiting the visco-elastic properties of SiO2and Si. Electrical measurements on single nanowire show that the resistance scales with length demonstrating consistent cross-sectional dimension in wires of different length. The nanowires formed on SOI wafers were also characterized as channels in FET configuration, using substrate as gate electrode. This technique can be exploited for realizing several nano-electronics, NEMS and biosensor applications in bulk silicon or SOI wafers, all in a CMOS compatible manner.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115744684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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