Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609769
T. Qiu, X. Wu, P. Chu
Si nanowires as cores were prepared using electroless metal deposition, which can be understood on the basis of the self-assembled localized microscopic electrochemical cell model. To give direct experimental proof for the formation of Si nanowires sheathed with thin DLC films, we conducted TEM on the samples. The results show that the composite Si nanowire structure has a crystalline core and a surrounding amorphous layer. Room-temperature visible photoluminescence (PL) was also observed from the as-prepared composite nanostructures.
{"title":"Coaxial Nanocable Arrays: Si Sheathed With Diamond-like Carbon","authors":"T. Qiu, X. Wu, P. Chu","doi":"10.1109/NANOEL.2006.1609769","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609769","url":null,"abstract":"Si nanowires as cores were prepared using electroless metal deposition, which can be understood on the basis of the self-assembled localized microscopic electrochemical cell model. To give direct experimental proof for the formation of Si nanowires sheathed with thin DLC films, we conducted TEM on the samples. The results show that the composite Si nanowire structure has a crystalline core and a surrounding amorphous layer. Room-temperature visible photoluminescence (PL) was also observed from the as-prepared composite nanostructures.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128172330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609761
A. Sarkar, T. K. Bhattacharyya
A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.
{"title":"MISISFET: A Device with an Advanced Dielectric Structure","authors":"A. Sarkar, T. K. Bhattacharyya","doi":"10.1109/NANOEL.2006.1609761","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609761","url":null,"abstract":"A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129505188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609692
C. Tan, J. Miao
Metallic carbon nanotubes (CNTs) have received worldwide attention as potential substitutions for traditional vertical interconnect (via) materials due to their excellent inherent electrical and thermal properties. In this paper, we present a RLC transmission line model for a single single-walled CNT (SWCNT) via. The resistance of a CNT is dependent on both the magnitude of the applied bias voltage and its length. Due to the low-bias nature of via application, weak electron scattering (acoustic phonons) dominates and the electron mean free path can be as large as a few micrometers. For 1-D nanoelectronic systems, the kinetic (or quantum) inductance dominates the magnetic (or continuum) inductance. As the CNT via is designed to be shielded by a grounded ring, the electrostatic capacitance between the via and the ring is considered. Subsequently, this single SWCNT model is further developed to include a bundled SWCNT via as a result of the weak intertube coupling. Established theoretical modeling results and experimental findings conclude that only the outer tube of the multi-walled CNT (MWCNT) contributes to its conductance. From this, we infer that our modeling approach can also be used for predicting the performance of single and bundled MWCNT-based vias.
{"title":"Modeling of Carbon Nanotube Vertical Interconnects as Transmission Lines","authors":"C. Tan, J. Miao","doi":"10.1109/NANOEL.2006.1609692","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609692","url":null,"abstract":"Metallic carbon nanotubes (CNTs) have received worldwide attention as potential substitutions for traditional vertical interconnect (via) materials due to their excellent inherent electrical and thermal properties. In this paper, we present a RLC transmission line model for a single single-walled CNT (SWCNT) via. The resistance of a CNT is dependent on both the magnitude of the applied bias voltage and its length. Due to the low-bias nature of via application, weak electron scattering (acoustic phonons) dominates and the electron mean free path can be as large as a few micrometers. For 1-D nanoelectronic systems, the kinetic (or quantum) inductance dominates the magnetic (or continuum) inductance. As the CNT via is designed to be shielded by a grounded ring, the electrostatic capacitance between the via and the ring is considered. Subsequently, this single SWCNT model is further developed to include a bundled SWCNT via as a result of the weak intertube coupling. Established theoretical modeling results and experimental findings conclude that only the outer tube of the multi-walled CNT (MWCNT) contributes to its conductance. From this, we infer that our modeling approach can also be used for predicting the performance of single and bundled MWCNT-based vias.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132775536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609711
Yanhui Yang, X. W. Sun, B. Tay, C. Xu
Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[ 0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.
{"title":"ZnO nanoresistors by vapor phase transport method","authors":"Yanhui Yang, X. W. Sun, B. Tay, C. Xu","doi":"10.1109/NANOEL.2006.1609711","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609711","url":null,"abstract":"Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[ 0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133451995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609772
Y. Chen, T. H. Li, K. Kin, C. Chien, J. Lou
In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.
{"title":"Characterization of Inter-Poly High-κ Dielectrics for Next Generation Stacked-Gate Flash Memories","authors":"Y. Chen, T. H. Li, K. Kin, C. Chien, J. Lou","doi":"10.1109/NANOEL.2006.1609772","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609772","url":null,"abstract":"In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133759656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609752
G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva
Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.
{"title":"Growth of tungsten oxide nanowires using simple thermal heating","authors":"G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva","doi":"10.1109/NANOEL.2006.1609752","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609752","url":null,"abstract":"Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129830049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609762
J. Hyun, B. Kang, J. Park, S. Nam, J. Boo
Singlecrystalline, epitaxial cubic silicon carbide (β-SiC) nano-thin films have been deposited on Si
在硅表面沉积了单晶外延立方碳化硅纳米薄膜
{"title":"Cubic SiC Nano-thin Films and Nano-wires: High Vacuum MOCVD, Surface Characterization, and Application Tests","authors":"J. Hyun, B. Kang, J. Park, S. Nam, J. Boo","doi":"10.1109/NANOEL.2006.1609762","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609762","url":null,"abstract":"Singlecrystalline, epitaxial cubic silicon carbide (β-SiC) nano-thin films have been deposited on Si","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127449419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609725
E. Seebauer
In the same way that gases react with surfaces from above, bulk point defects such as interstitial atoms and vacancies can react from below. Little attention has been paid to this form of surface chemistry, although it is very important for nanoscale semiconductor devices where all regions are in close proximity to a surface or interface. Recent solid-state diffusion measurements and modeling in our laboratory have shown that reactions between defects and semiconductor surfaces can play the dominant role in regulating defect concentrations. Furthermore, the rates of these reactions can be controlled through submonolayer gas adsorption. There are two separate mechanisms for using the surface to control bulk defect concentrations. The first mechanism involves reflecting charged defects from the surface due to electrically active surface defects that set up a repulsive electric field. The second mechanism involves the exchange of defects with surface dangling bonds. Taken together, these observations point to entirely new possibilities for controlling and manipulating defects in semiconductor nanostructure fabrication.
{"title":"Defect Engineering in Nanoscale Semiconductors through Surface Chemistry","authors":"E. Seebauer","doi":"10.1109/NANOEL.2006.1609725","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609725","url":null,"abstract":"In the same way that gases react with surfaces from above, bulk point defects such as interstitial atoms and vacancies can react from below. Little attention has been paid to this form of surface chemistry, although it is very important for nanoscale semiconductor devices where all regions are in close proximity to a surface or interface. Recent solid-state diffusion measurements and modeling in our laboratory have shown that reactions between defects and semiconductor surfaces can play the dominant role in regulating defect concentrations. Furthermore, the rates of these reactions can be controlled through submonolayer gas adsorption. There are two separate mechanisms for using the surface to control bulk defect concentrations. The first mechanism involves reflecting charged defects from the surface due to electrically active surface defects that set up a repulsive electric field. The second mechanism involves the exchange of defects with surface dangling bonds. Taken together, these observations point to entirely new possibilities for controlling and manipulating defects in semiconductor nanostructure fabrication.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126019801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609679
M. Batistuta, M. Stella, H. Biagi, J. D. da Costa
A one-dimensional model is developed and numerical simulation results are presented for single-electron tunnelling non-linear dynamics in a pair of coupled quantum dots, with ohmic energy dissipation. The analysis of a simple mesoscopic cell structure with two coupled quantum dots, possessing bi-stability with only one excess electron, is also presented in order to evaluate its application in implementing fast cellular automata.
{"title":"Simulation of Dissipative Single-Electron Dynamics in Coupled Quantum Wells","authors":"M. Batistuta, M. Stella, H. Biagi, J. D. da Costa","doi":"10.1109/NANOEL.2006.1609679","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609679","url":null,"abstract":"A one-dimensional model is developed and numerical simulation results are presented for single-electron tunnelling non-linear dynamics in a pair of coupled quantum dots, with ohmic energy dissipation. The analysis of a simple mesoscopic cell structure with two coupled quantum dots, possessing bi-stability with only one excess electron, is also presented in order to evaluate its application in implementing fast cellular automata.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129635957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609755
K. P. Yung, B. Tay
Carbon nanotubes were grown using RF magnetron sputtering or Filtered Cathodic Vacuum Arc (FCVA) deposited iron containing atmosphere carbon (a-C: Fe) films as catalyst, by Hot filament chemical vapor deposition (HFCVD). The chemical structure of the catalyst layers was studied by X-ray diffraction (XRD) and the morphology of the films was analyzed by scanning electron microscope (SEM). Randomly orientated carbon nanotubes film was found on sputtered a-C:Fe catalyst, while well-aligned carbon nanotubes were observed on FCVA deposited a-C:Fe catalyst. The diameters of the nanotubes grown on sputtered a-C:Fe follow to that of the annealed catalyst particles grain size. However, the diameters of the nanotubes from FCVA a-C: Fe were much smaller than the grain size of the catalyst particles they grown from
{"title":"Effects of a-C:Fe Catalyst Deposition Method on the Growth of Carbon Nanotubes","authors":"K. P. Yung, B. Tay","doi":"10.1109/NANOEL.2006.1609755","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609755","url":null,"abstract":"Carbon nanotubes were grown using RF magnetron sputtering or Filtered Cathodic Vacuum Arc (FCVA) deposited iron containing atmosphere carbon (a-C: Fe) films as catalyst, by Hot filament chemical vapor deposition (HFCVD). The chemical structure of the catalyst layers was studied by X-ray diffraction (XRD) and the morphology of the films was analyzed by scanning electron microscope (SEM). Randomly orientated carbon nanotubes film was found on sputtered a-C:Fe catalyst, while well-aligned carbon nanotubes were observed on FCVA deposited a-C:Fe catalyst. The diameters of the nanotubes grown on sputtered a-C:Fe follow to that of the annealed catalyst particles grain size. However, the diameters of the nanotubes from FCVA a-C: Fe were much smaller than the grain size of the catalyst particles they grown from","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124010828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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