Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609769
T. Qiu, X. Wu, P. Chu
Si nanowires as cores were prepared using electroless metal deposition, which can be understood on the basis of the self-assembled localized microscopic electrochemical cell model. To give direct experimental proof for the formation of Si nanowires sheathed with thin DLC films, we conducted TEM on the samples. The results show that the composite Si nanowire structure has a crystalline core and a surrounding amorphous layer. Room-temperature visible photoluminescence (PL) was also observed from the as-prepared composite nanostructures.
{"title":"Coaxial Nanocable Arrays: Si Sheathed With Diamond-like Carbon","authors":"T. Qiu, X. Wu, P. Chu","doi":"10.1109/NANOEL.2006.1609769","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609769","url":null,"abstract":"Si nanowires as cores were prepared using electroless metal deposition, which can be understood on the basis of the self-assembled localized microscopic electrochemical cell model. To give direct experimental proof for the formation of Si nanowires sheathed with thin DLC films, we conducted TEM on the samples. The results show that the composite Si nanowire structure has a crystalline core and a surrounding amorphous layer. Room-temperature visible photoluminescence (PL) was also observed from the as-prepared composite nanostructures.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128172330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609772
Y. Chen, T. H. Li, K. Kin, C. Chien, J. Lou
In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.
{"title":"Characterization of Inter-Poly High-κ Dielectrics for Next Generation Stacked-Gate Flash Memories","authors":"Y. Chen, T. H. Li, K. Kin, C. Chien, J. Lou","doi":"10.1109/NANOEL.2006.1609772","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609772","url":null,"abstract":"In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133759656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609711
Yanhui Yang, X. W. Sun, B. Tay, C. Xu
Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[ 0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.
{"title":"ZnO nanoresistors by vapor phase transport method","authors":"Yanhui Yang, X. W. Sun, B. Tay, C. Xu","doi":"10.1109/NANOEL.2006.1609711","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609711","url":null,"abstract":"Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[ 0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133451995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609761
A. Sarkar, T. K. Bhattacharyya
A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.
{"title":"MISISFET: A Device with an Advanced Dielectric Structure","authors":"A. Sarkar, T. K. Bhattacharyya","doi":"10.1109/NANOEL.2006.1609761","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609761","url":null,"abstract":"A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129505188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609692
C. Tan, J. Miao
Metallic carbon nanotubes (CNTs) have received worldwide attention as potential substitutions for traditional vertical interconnect (via) materials due to their excellent inherent electrical and thermal properties. In this paper, we present a RLC transmission line model for a single single-walled CNT (SWCNT) via. The resistance of a CNT is dependent on both the magnitude of the applied bias voltage and its length. Due to the low-bias nature of via application, weak electron scattering (acoustic phonons) dominates and the electron mean free path can be as large as a few micrometers. For 1-D nanoelectronic systems, the kinetic (or quantum) inductance dominates the magnetic (or continuum) inductance. As the CNT via is designed to be shielded by a grounded ring, the electrostatic capacitance between the via and the ring is considered. Subsequently, this single SWCNT model is further developed to include a bundled SWCNT via as a result of the weak intertube coupling. Established theoretical modeling results and experimental findings conclude that only the outer tube of the multi-walled CNT (MWCNT) contributes to its conductance. From this, we infer that our modeling approach can also be used for predicting the performance of single and bundled MWCNT-based vias.
{"title":"Modeling of Carbon Nanotube Vertical Interconnects as Transmission Lines","authors":"C. Tan, J. Miao","doi":"10.1109/NANOEL.2006.1609692","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609692","url":null,"abstract":"Metallic carbon nanotubes (CNTs) have received worldwide attention as potential substitutions for traditional vertical interconnect (via) materials due to their excellent inherent electrical and thermal properties. In this paper, we present a RLC transmission line model for a single single-walled CNT (SWCNT) via. The resistance of a CNT is dependent on both the magnitude of the applied bias voltage and its length. Due to the low-bias nature of via application, weak electron scattering (acoustic phonons) dominates and the electron mean free path can be as large as a few micrometers. For 1-D nanoelectronic systems, the kinetic (or quantum) inductance dominates the magnetic (or continuum) inductance. As the CNT via is designed to be shielded by a grounded ring, the electrostatic capacitance between the via and the ring is considered. Subsequently, this single SWCNT model is further developed to include a bundled SWCNT via as a result of the weak intertube coupling. Established theoretical modeling results and experimental findings conclude that only the outer tube of the multi-walled CNT (MWCNT) contributes to its conductance. From this, we infer that our modeling approach can also be used for predicting the performance of single and bundled MWCNT-based vias.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132775536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609752
G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva
Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.
{"title":"Growth of tungsten oxide nanowires using simple thermal heating","authors":"G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva","doi":"10.1109/NANOEL.2006.1609752","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609752","url":null,"abstract":"Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129830049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609762
J. Hyun, B. Kang, J. Park, S. Nam, J. Boo
Singlecrystalline, epitaxial cubic silicon carbide (β-SiC) nano-thin films have been deposited on Si
在硅表面沉积了单晶外延立方碳化硅纳米薄膜
{"title":"Cubic SiC Nano-thin Films and Nano-wires: High Vacuum MOCVD, Surface Characterization, and Application Tests","authors":"J. Hyun, B. Kang, J. Park, S. Nam, J. Boo","doi":"10.1109/NANOEL.2006.1609762","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609762","url":null,"abstract":"Singlecrystalline, epitaxial cubic silicon carbide (β-SiC) nano-thin films have been deposited on Si","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127449419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609750
Y. Leung, A. B. Djuriši, W. Kwok, D. Phillips, W. K. Chan, H. Chen, S. Gwo
In this paper, we report the study of the optical properties of ZnO ribbon/comb nanostructures. The nanostructures were synthesized using a previously reported procedure, and they were characterized by scanning electron microscopy (SEM). The optical properties of ribbon/comb structures were studied using variable temperature photoluminescence with a HeCd laser excitation source (325 nm). Time-resolved photoluminescence (TRPL) was measured by using the Kerr gated fluorescence technique.
{"title":"Optical properties of ZnO ribbon/comb structures","authors":"Y. Leung, A. B. Djuriši, W. Kwok, D. Phillips, W. K. Chan, H. Chen, S. Gwo","doi":"10.1109/NANOEL.2006.1609750","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609750","url":null,"abstract":"In this paper, we report the study of the optical properties of ZnO ribbon/comb nanostructures. The nanostructures were synthesized using a previously reported procedure, and they were characterized by scanning electron microscopy (SEM). The optical properties of ribbon/comb structures were studied using variable temperature photoluminescence with a HeCd laser excitation source (325 nm). Time-resolved photoluminescence (TRPL) was measured by using the Kerr gated fluorescence technique.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128195322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609709
L. Wang, D.W. Yu, Y. Li, K. Wong
The quantum transmission characteristic of a C60molecular bridge with near- and far-terminal electrodes is investigated theoretically by using Green's function approach based on tight-binding theory, in which only one π orbital is considered per carbon atom inside a C60molecule. The transmission spectra for electrons through the C60molecular bridge from an input terminal to two output terminals have been obtained. The quantum current distributions inside the molecular bridge are calculated by the current density method based on the Fisher-Lee formula at the energy points E=-1.36eV and +1.59eV, respectively, where the transmission probabilities appear as peaks. We found that the transmission spectra are related to the incident electronic energy and depend on C60molecular levels strongly. We also found that the multi-point switching properties of C60molecular bridge depend on the energy of the electrons transmitted through the C60molecule. Agreement of the quantum current distributions in the C60molecular bridge with Kirchhoff quantum current momentum conservation law is explained.
{"title":"Quantum Transmission and Current Distribution of C60Molecule Bridge with Near-, Far-terminal Electrodes","authors":"L. Wang, D.W. Yu, Y. Li, K. Wong","doi":"10.1109/NANOEL.2006.1609709","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609709","url":null,"abstract":"The quantum transmission characteristic of a C60molecular bridge with near- and far-terminal electrodes is investigated theoretically by using Green's function approach based on tight-binding theory, in which only one π orbital is considered per carbon atom inside a C60molecule. The transmission spectra for electrons through the C60molecular bridge from an input terminal to two output terminals have been obtained. The quantum current distributions inside the molecular bridge are calculated by the current density method based on the Fisher-Lee formula at the energy points E=-1.36eV and +1.59eV, respectively, where the transmission probabilities appear as peaks. We found that the transmission spectra are related to the incident electronic energy and depend on C60molecular levels strongly. We also found that the multi-point switching properties of C60molecular bridge depend on the energy of the electrons transmitted through the C60molecule. Agreement of the quantum current distributions in the C60molecular bridge with Kirchhoff quantum current momentum conservation law is explained.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121634520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609755
K. P. Yung, B. Tay
Carbon nanotubes were grown using RF magnetron sputtering or Filtered Cathodic Vacuum Arc (FCVA) deposited iron containing atmosphere carbon (a-C: Fe) films as catalyst, by Hot filament chemical vapor deposition (HFCVD). The chemical structure of the catalyst layers was studied by X-ray diffraction (XRD) and the morphology of the films was analyzed by scanning electron microscope (SEM). Randomly orientated carbon nanotubes film was found on sputtered a-C:Fe catalyst, while well-aligned carbon nanotubes were observed on FCVA deposited a-C:Fe catalyst. The diameters of the nanotubes grown on sputtered a-C:Fe follow to that of the annealed catalyst particles grain size. However, the diameters of the nanotubes from FCVA a-C: Fe were much smaller than the grain size of the catalyst particles they grown from
{"title":"Effects of a-C:Fe Catalyst Deposition Method on the Growth of Carbon Nanotubes","authors":"K. P. Yung, B. Tay","doi":"10.1109/NANOEL.2006.1609755","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609755","url":null,"abstract":"Carbon nanotubes were grown using RF magnetron sputtering or Filtered Cathodic Vacuum Arc (FCVA) deposited iron containing atmosphere carbon (a-C: Fe) films as catalyst, by Hot filament chemical vapor deposition (HFCVD). The chemical structure of the catalyst layers was studied by X-ray diffraction (XRD) and the morphology of the films was analyzed by scanning electron microscope (SEM). Randomly orientated carbon nanotubes film was found on sputtered a-C:Fe catalyst, while well-aligned carbon nanotubes were observed on FCVA deposited a-C:Fe catalyst. The diameters of the nanotubes grown on sputtered a-C:Fe follow to that of the annealed catalyst particles grain size. However, the diameters of the nanotubes from FCVA a-C: Fe were much smaller than the grain size of the catalyst particles they grown from","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124010828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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