In this study, we focus on optimising the structural properties of Poly 3-methylthiophene (P3MT) by controlling the synthesis temperature and examining its effects on electrical characteristics. A thorough understanding of these electrical properties within device geometries is essential for advancing various optoelectronic applications. Changes in the polymer’s structure can significantly influence the charge-transport properties, which are vital for enhancing device performance. P3MT is electrodeposited onto a stainless-steel substrate at different synthesis temperatures, specifically 25 °C, 0 °C, −10 °C, and −20 °C. The as-deposited P3MT films serve as host material, while tetra-butyl ammonium hexafluorophosphate (TBAPF6) serves as both a dopant and an electrolyte for electrochemical deposition. Raman spectroscopy measurements have well established that electropolymerized, doped P3MT exhibits two distinct structures in its thin film: quinoid and aromatic. By varying the synthesis temperature, we can modify the ratio of these structures within thin films. Electrical transport and relaxation measurements on a Metal-polymer-metal (MPM) sandwich device geometry show that this ratio affects the conduction mechanisms, as confirmed by I-V and impedance measurements. Notably, a decrease in synthesis temperature leads to a predominance of bulk-limited conduction over interface-related conduction in Stainless steel (SS) SS/P3MT/Ag (Silver) devices.
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