The near-infrared photoresponses of an n-AlGaAs/GaAs heterojunction field-effect transistor (FET) were investigated for the irradiation of two lights: (A) a laser beam with the energy above the Schottky-barrier which uniformly illuminates the gate region and (B) a laser beam with the energy above the GaAs bandgap which locally illuminates the ungate region. We measured a lateral photocurrent in the two dimensional electron gas (2DEG) channel at the n-AlGaAs/GaAs heterojunction and found that the FET acts as an optical AND element; the lateral photocurrent is generated only when both the light A and B simultaneously illuminate the FET. The lateral current flows from left to right when the left side of the FET is illuminated with the light B, while the right side irradiation leads to the current from right to left. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by an asymmetric electron transfer resul...
{"title":"Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor","authors":"T. Kawazu, T. Noda, Y. Sakuma","doi":"10.1063/1.5010845","DOIUrl":"https://doi.org/10.1063/1.5010845","url":null,"abstract":"The near-infrared photoresponses of an n-AlGaAs/GaAs heterojunction field-effect transistor (FET) were investigated for the irradiation of two lights: (A) a laser beam with the energy above the Schottky-barrier which uniformly illuminates the gate region and (B) a laser beam with the energy above the GaAs bandgap which locally illuminates the ungate region. We measured a lateral photocurrent in the two dimensional electron gas (2DEG) channel at the n-AlGaAs/GaAs heterojunction and found that the FET acts as an optical AND element; the lateral photocurrent is generated only when both the light A and B simultaneously illuminate the FET. The lateral current flows from left to right when the left side of the FET is illuminated with the light B, while the right side irradiation leads to the current from right to left. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by an asymmetric electron transfer resul...","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74455891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cascaded chirped long period fiber gratings (C-CLPG) are provided as sensing elements for use in intensity-based underwater acoustic fiber-optic sensors, in which C-CLPGs are inscribed in photosensitive fiber by means of point-by-point technique with UV radiation. For a demonstration, C-CLPGs are immersed in a water vessel and exerted by underwater acoustic waves. In the demonstration, higher sensitive underwater acoustic detection is obtained by employing a C-CLPG with the steeper channeled spectrum.
{"title":"Underwater acoustic sensing by using cascaded-chirped long period fiber gratings (1)","authors":"Hayato Takeyama, S. Tanaka, A. Wada, N. Takahashi","doi":"10.1364/OFS.2018.WF84","DOIUrl":"https://doi.org/10.1364/OFS.2018.WF84","url":null,"abstract":"Cascaded chirped long period fiber gratings (C-CLPG) are provided as sensing elements for use in intensity-based underwater acoustic fiber-optic sensors, in which C-CLPGs are inscribed in photosensitive fiber by means of point-by-point technique with UV radiation. For a demonstration, C-CLPGs are immersed in a water vessel and exerted by underwater acoustic waves. In the demonstration, higher sensitive underwater acoustic detection is obtained by employing a C-CLPG with the steeper channeled spectrum.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84673911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-08DOI: 10.1299/JSMEMNM.2018.9.30AM3PN31
Takafumi Yamaguchi, S. Nakata, T. Arie, S. Akita, K. Takei
{"title":"Development of soft robot integrated with multifunctional flexible e-skin","authors":"Takafumi Yamaguchi, S. Nakata, T. Arie, S. Akita, K. Takei","doi":"10.1299/JSMEMNM.2018.9.30AM3PN31","DOIUrl":"https://doi.org/10.1299/JSMEMNM.2018.9.30AM3PN31","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88893955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-08DOI: 10.1299/JSMERMD.2018.1P1-J11
Bowen Zhang, Yiming Shi, Miyake Takeo, Nakazawa Koji
{"title":"Nanostraw membrane stamping for direct delivery of molecules into adhesive cells","authors":"Bowen Zhang, Yiming Shi, Miyake Takeo, Nakazawa Koji","doi":"10.1299/JSMERMD.2018.1P1-J11","DOIUrl":"https://doi.org/10.1299/JSMERMD.2018.1P1-J11","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87409384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
By studying the electrical control of the magnetic properties of ferromagnetic semiconductors (FMSs), we can understand many fundamental aspects of carrier-induced ferromagnetism and explore the possibilities of device applications. Previous experiments on the electrical control of ferromagnetism in Mn-doped FMSs were limited to very low temperatures due to their low Curie temperature (TC). Here, we demonstrate electrical control ferromagnetism at high temperature (210 K) in an electric double layer transistor with an n-type high-TC FMS (In0.89,Fe0.11)Sb thin film channel. A liquid electrolyte is used instead of a conventional solid gate to obtain a large change (40%) of the electron density in the (In0.89,Fe0.11)Sb channel. By applying a small gate voltage (0 → +5 V), TC of the (In,Fe)Sb thin film can be changed by 7 K, indicating that the magnetization as well as ferromagnetic phase transition in (In,Fe)Sb can be controlled at high temperature by the gate electric field despite a small change of electron concentration Δn = 2.2 × 1017 cm−3. Our result paves a way for realizing semiconductor spintronic devices operating at room temperature with low power consumption.By studying the electrical control of the magnetic properties of ferromagnetic semiconductors (FMSs), we can understand many fundamental aspects of carrier-induced ferromagnetism and explore the possibilities of device applications. Previous experiments on the electrical control of ferromagnetism in Mn-doped FMSs were limited to very low temperatures due to their low Curie temperature (TC). Here, we demonstrate electrical control ferromagnetism at high temperature (210 K) in an electric double layer transistor with an n-type high-TC FMS (In0.89,Fe0.11)Sb thin film channel. A liquid electrolyte is used instead of a conventional solid gate to obtain a large change (40%) of the electron density in the (In0.89,Fe0.11)Sb channel. By applying a small gate voltage (0 → +5 V), TC of the (In,Fe)Sb thin film can be changed by 7 K, indicating that the magnetization as well as ferromagnetic phase transition in (In,Fe)Sb can be controlled at high temperature by the gate electric field despite a small change of electro...
{"title":"Electrical control of ferromagnetism in the n -type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature","authors":"Tung T. Nguyen, N. Pham, D. Le, Masaaki Tanaka","doi":"10.1063/1.5022828","DOIUrl":"https://doi.org/10.1063/1.5022828","url":null,"abstract":"By studying the electrical control of the magnetic properties of ferromagnetic semiconductors (FMSs), we can understand many fundamental aspects of carrier-induced ferromagnetism and explore the possibilities of device applications. Previous experiments on the electrical control of ferromagnetism in Mn-doped FMSs were limited to very low temperatures due to their low Curie temperature (TC). Here, we demonstrate electrical control ferromagnetism at high temperature (210 K) in an electric double layer transistor with an n-type high-TC FMS (In0.89,Fe0.11)Sb thin film channel. A liquid electrolyte is used instead of a conventional solid gate to obtain a large change (40%) of the electron density in the (In0.89,Fe0.11)Sb channel. By applying a small gate voltage (0 → +5 V), TC of the (In,Fe)Sb thin film can be changed by 7 K, indicating that the magnetization as well as ferromagnetic phase transition in (In,Fe)Sb can be controlled at high temperature by the gate electric field despite a small change of electron concentration Δn = 2.2 × 1017 cm−3. Our result paves a way for realizing semiconductor spintronic devices operating at room temperature with low power consumption.By studying the electrical control of the magnetic properties of ferromagnetic semiconductors (FMSs), we can understand many fundamental aspects of carrier-induced ferromagnetism and explore the possibilities of device applications. Previous experiments on the electrical control of ferromagnetism in Mn-doped FMSs were limited to very low temperatures due to their low Curie temperature (TC). Here, we demonstrate electrical control ferromagnetism at high temperature (210 K) in an electric double layer transistor with an n-type high-TC FMS (In0.89,Fe0.11)Sb thin film channel. A liquid electrolyte is used instead of a conventional solid gate to obtain a large change (40%) of the electron density in the (In0.89,Fe0.11)Sb channel. By applying a small gate voltage (0 → +5 V), TC of the (In,Fe)Sb thin film can be changed by 7 K, indicating that the magnetization as well as ferromagnetic phase transition in (In,Fe)Sb can be controlled at high temperature by the gate electric field despite a small change of electro...","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"252 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81872828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on the performance of density functional theory (DFT) with the Tran–Blaha modified Becke–Johnson exchange potential and the random phase approximation dielectric function for optical constants of semiconductors in the ultraviolet–visible (UV-Vis) light region. We calculate optical bandgaps Eg, refractive indices n, and extinction coefficients k of 70 semiconductors listed in the Handbook of Optical Constants of Solids [(Academic Press, 1985), Vol. 1; (Academic Press, 1991), Vol. 2; and (Academic Press, 1998), Vol. 3] and compare the results with experimental values. The results show that the calculated bandgaps and optical constants agree well with the experimental values to within 0.440 eV for Eg, 0.246–0.299 for n, and 0.207–0.598 for k in root mean squared error (RMSE). The small values of the RMSEs indicate that the optical constants of semiconductors in the UV-Vis region can be quantitatively predicted even by a low-cost DFT calculation of this type.
{"title":"Assessing the performance of the Tran-Blaha modified Becke-Johnson exchange potential for optical constants of semiconductors in the ultraviolet-visible light region","authors":"K. Nakano, T. Sakai","doi":"10.1063/1.5006170","DOIUrl":"https://doi.org/10.1063/1.5006170","url":null,"abstract":"We report on the performance of density functional theory (DFT) with the Tran–Blaha modified Becke–Johnson exchange potential and the random phase approximation dielectric function for optical constants of semiconductors in the ultraviolet–visible (UV-Vis) light region. We calculate optical bandgaps Eg, refractive indices n, and extinction coefficients k of 70 semiconductors listed in the Handbook of Optical Constants of Solids [(Academic Press, 1985), Vol. 1; (Academic Press, 1991), Vol. 2; and (Academic Press, 1998), Vol. 3] and compare the results with experimental values. The results show that the calculated bandgaps and optical constants agree well with the experimental values to within 0.440 eV for Eg, 0.246–0.299 for n, and 0.207–0.598 for k in root mean squared error (RMSE). The small values of the RMSEs indicate that the optical constants of semiconductors in the UV-Vis region can be quantitatively predicted even by a low-cost DFT calculation of this type.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79425867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-27DOI: 10.29363/NANOGE.AP-HOPV.2018.043
T. S. Ripolles, C. H. Ng, Kengo Hamada, Siow Hwa Teo, H. Lim, J. Bisquert, S. Hayase
{"title":"Origin of Open Circuit Voltage in wide band gap absorbers of all inorganic Cesium Perovskite Solar Cells","authors":"T. S. Ripolles, C. H. Ng, Kengo Hamada, Siow Hwa Teo, H. Lim, J. Bisquert, S. Hayase","doi":"10.29363/NANOGE.AP-HOPV.2018.043","DOIUrl":"https://doi.org/10.29363/NANOGE.AP-HOPV.2018.043","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80299549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-21DOI: 10.7567/SSDM.2017.PS-11-06
K. Imai, T. Horio, T. Hattori, K. Sawada, R. Tero
{"title":"Formation of Lipid Bilayer on Ion Image Sensor and Measurement of Ion Concentration Change","authors":"K. Imai, T. Horio, T. Hattori, K. Sawada, R. Tero","doi":"10.7567/SSDM.2017.PS-11-06","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-11-06","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"328 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85419217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-15-10
A. Singh
{"title":"Cs 3 Sb 2 I 9 - All Inorganic Lead Free Perovskite Like Material for Solar Cell Application","authors":"A. Singh","doi":"10.7567/SSDM.2017.PS-15-10","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-10","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84389560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-2-07
Y. Araga, H. Shimamoto, S. Melamed, K. Kikuchi, M. Aoyagi
{"title":"Investigation of Transient Thermal Dissipation in Three-Dimensional Stacked ICs","authors":"Y. Araga, H. Shimamoto, S. Melamed, K. Kikuchi, M. Aoyagi","doi":"10.7567/SSDM.2017.PS-2-07","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-2-07","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"55 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80175399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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